| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 04/01/2004 | US20040060518 Apparatus for inverted multi-wafer MOCVD fabrication |
| 03/31/2004 | EP1403911A2 Thin film device and its fabrication method |
| 03/31/2004 | EP1119653B1 Simulated diamond gemstones formed of aluminum nitride and aluminum nitride:silicon carbide alloys |
| 03/31/2004 | CN1144064C Method of organic film deposition |
| 03/31/2004 | CN1143907C Truncated susceptor for vapor-phase deposition |
| 03/30/2004 | US6713789 Group III nitride compound semiconductor device and method of producing the same |
| 03/30/2004 | US6713371 Large grain size polysilicon films formed by nuclei-induced solid phase crystallization |
| 03/30/2004 | US6712908 Purified silicon production system |
| 03/30/2004 | US6712903 Mask for evaluating selective epitaxial growth process |
| 03/25/2004 | WO2004024981A2 Precursor material delivery system for atomic layer deposition |
| 03/25/2004 | WO2004024296A1 High conductivity particle filter |
| 03/25/2004 | US20040058463 Method of forming a p-type group II-VI semiconductor crystal layer on a substrate |
| 03/25/2004 | US20040057482 GaN structures having low dislocation density and methods of manufacture |
| 03/25/2004 | US20040056368 Liquid organometallic compound vaporizing/feeding system |
| 03/24/2004 | CN1483668A Carbon nano pipe array growth method |
| 03/23/2004 | US6709776 Ferroelectricity |
| 03/23/2004 | US6709703 Method for fabricating a III-V nitride film and an apparatus for fabricating the same |
| 03/23/2004 | US6709610 Isotropic dry cleaning process for noble metal integrated circuit structures |
| 03/23/2004 | US6709520 Reactor and method for chemical vapor deposition |
| 03/23/2004 | US6709513 Substrate including wide low-defect region for use in semiconductor element |
| 03/23/2004 | US6709512 Method of growing a polycrystalline silicon layer, method of growing a single crystal silicon layer and catalytic CVD apparatus |
| 03/23/2004 | US6709267 Semiconductors |
| 03/18/2004 | WO2004022820A1 Method for achieving device-quality, lattice- mismatched, heteroepitaxial active layers |
| 03/18/2004 | WO2002080244A3 Improved process for deposition of semiconductor films |
| 03/18/2004 | US20040053438 Semiconductor wafer and its manufacturing method |
| 03/18/2004 | US20040053053 Carbon nanotube array and method for forming same |
| 03/18/2004 | US20040052972 Atomic layer deposition (ALD)/epitaxy |
| 03/18/2004 | US20040052716 Method for producing silicon |
| 03/18/2004 | US20040050494 Plasma processing device |
| 03/18/2004 | US20040050319 Nickel-silicon compound forming method, semiconductor device manufacturing method, and semiconductor device |
| 03/18/2004 | DE10241973A1 Epitaxial growth of an epitaxial material with silicon used in the production of semiconductor components comprises using a material containing nickel, silicon and aluminum |
| 03/17/2004 | EP1397835A2 Composite structure with a uniform crystal orientation and the method of controlling the crystal orientation of one such structure |
| 03/17/2004 | EP1397827A1 Arrangement comprising a support body with a substrate holder mounted thereon on a gas bearing with rotating drive |
| 03/17/2004 | EP1397528A2 Device for depositing especially, crystalline layers on one or more substrates, especially substrates which are also crystalline |
| 03/16/2004 | US6706620 Method for fabricating a nitride film |
| 03/16/2004 | US6706335 Effecting high frequency plasma chemical vapor deposition using a source gas comprising a silicon halide (silicon chloride or fluoride) and hydrogen forming a silicon thin film |
| 03/16/2004 | US6706119 Apparatus for epitaxially growing semiconductor device structures with submicron group III nitride layer utilizing HVPE |
| 03/11/2004 | WO2004021421A1 Method for manufacturing silicon epitaxial wafer |
| 03/11/2004 | WO2004020706A1 Lightly doped silicon carbide wafer and use thereof in high power devices |
| 03/11/2004 | WO2004020705A1 Epitaxial wafer and its manufacturing method |
| 03/11/2004 | WO2004020686A2 A hybrid beam deposition system and methods for fabricating zno films, p-type zno films, and zno-based ii-vi compound semiconductor devices |
| 03/11/2004 | US20040048471 Semiconductor base material and method of manufacturing the material |
| 03/11/2004 | US20040048426 Integrated circuit including single crystal semiconductor layer on non-crystalline layer |
| 03/11/2004 | US20040045889 High conductivity particle filter |
| 03/11/2004 | US20040045675 Plasma etching apparatus |
| 03/10/2004 | CN1481452A High-temp superconductor film having flat surface |
| 03/10/2004 | CN1141735C Manufacture of crystallized silicon series semiconductor films |
| 03/09/2004 | US6703708 Graded thin films |
| 03/09/2004 | US6703293 Implantation at elevated temperatures for amorphization re-crystallization of Si1-xGex films on silicon substrates |
| 03/09/2004 | US6703290 Growth of epitaxial semiconductor material with improved crystallographic properties |
| 03/09/2004 | US6703288 Compound crystal and method of manufacturing same |
| 03/09/2004 | US6703255 Method for fabricating a III nitride film |
| 03/09/2004 | US6703144 Heterointegration of materials using deposition and bonding |
| 03/04/2004 | WO2004019391A2 Semiconductor heterostructures having reduced dislocation pile-ups and related methods |
| 03/04/2004 | WO2004004927A8 Nanostructures and methods for manufacturing the same |
| 03/04/2004 | WO2003040440A3 Apparatus and method for diamond production |
| 03/04/2004 | WO2003018466A3 Catalyst for carbon nanotube growth |
| 03/04/2004 | US20040043639 Method and apparatus for transferring heat from a substrate to a chuck |
| 03/04/2004 | US20040043148 Vapor deposition; connecting tubes with metal strips |
| 03/04/2004 | US20040040494 Systems and methods for forming strontium- and/or barium-containing layers |
| 03/04/2004 | US20040040493 Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy |
| 03/04/2004 | US20040040492 Substrate and manufacturing method therefor |
| 03/04/2004 | DE10238135A1 Production of group II oxide film for semiconductor, e.g. (opto)electronic device based on p-doped zinc oxide, uses one gas phase epitaxy chamber to grow buffer layer, using given oxygen precursor, and main layer at higher temperature |
| 03/03/2004 | EP1394865A1 Iii group nitride based semiconductor element and method for manufacture thereof |
| 03/03/2004 | EP1393361A2 Low temperature load and bake |
| 03/03/2004 | EP1393359A1 Rector having a movable shuter |
| 03/03/2004 | EP1393352A2 Semiconductor device, semiconductor layer and production method thereof |
| 03/03/2004 | EP1393350A2 Assembly comprising heat distributing plate and edge support |
| 03/03/2004 | EP1392894A2 Molecular beam epitaxy equipment |
| 03/03/2004 | EP1392885A1 Gas port sealing for cvd/cvi furnace hearth plates |
| 03/03/2004 | CN1140914C Method for mfg. semiconductor structure having crystalline alkaline earth metal oxide interface with silicon |
| 03/02/2004 | US6700179 Method for growing GaN compound semiconductor crystal and semiconductor substrate |
| 03/02/2004 | US6699525 Method of forming carbon nanotubes and apparatus therefor |
| 03/02/2004 | US6698728 Method and apparatus for delivering precursors to a plurality of epitaxial reactor sites |
| 02/26/2004 | WO2004017365A2 Deposition of amorphous silicon-containing films |
| 02/26/2004 | US20040038477 Haze-free BST films |
| 02/26/2004 | US20040037970 Method for forming gas cluster and method for forming thin film |
| 02/25/2004 | EP1391941A1 Production method for light emitting element absract: |
| 02/25/2004 | EP1390561A1 Method and device for depositing layers |
| 02/25/2004 | CN1478295A Method for making substrate in particular for optics, eletronics or optoelectronics and resulting substrate |
| 02/25/2004 | CN1478057A Silicon production process |
| 02/25/2004 | CN1477240A Deposition method of seed-crystal-free and bias-less diamond quasi-monocrystal film |
| 02/24/2004 | US6696372 Method of fabricating a semiconductor structure having quantum wires and a semiconductor device including such structure |
| 02/19/2004 | WO2003091822A3 Method for producing nitrides and uses thereof as fluorescent markers and light-emitting diodes |
| 02/19/2004 | WO2003083902A3 Thermal production of nanowires |
| 02/19/2004 | US20040033674 Deposition of amorphous silicon-containing films |
| 02/19/2004 | US20040031680 One or more shields for use in a sputter reactor |
| 02/19/2004 | DE19510318B4 Verfahren und Vorrichtung zur Herstellung epitaktischer Schichten Method and apparatus for producing epitaxial layers |
| 02/18/2004 | EP1018167B1 THE METHOD OF FABRICATION OF SEMICONDUCTING COMPOUNDS OF NITRIDES AIII-BV OF p- AND n-TYPE ELECTRIC CONDUCTIVITY |
| 02/18/2004 | CN1476047A Preparation method of gamma-LiAl0*/alpha-Al*0*composite base material |
| 02/17/2004 | US6693298 Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same |
| 02/17/2004 | US6693033 Method of removing an amorphous oxide from a monocrystalline surface |
| 02/17/2004 | US6693021 GaN single crystal substrate and method of making the same |
| 02/17/2004 | US6692569 A-site-and/or b-site-modified pbzrtio3 materials and (pb, sr, ca, ba, mg) (zr, ti,nb, ta)o3 films having utility in ferroelectric random access memories and high performance thin film microactuators |
| 02/17/2004 | US6692568 Sputtering a group iii metal in a nitrogen or ammonia environment and depositing it on a growth surface |
| 02/17/2004 | US6692221 Method of adhering wafer and wafer adhering device |
| 02/12/2004 | US20040030530 Apparatus and method for detection of direct sequence spread spectrum signals in networking systems |
| 02/12/2004 | US20040029738 High-temperature superconductive film flat surface |
| 02/12/2004 | US20040029737 Forming film using seed crystal; high temperature superconductivity |
| 02/12/2004 | US20040029368 Hypercontacting |