| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 05/13/2004 | US20040089919 Single crystal GaN substrate, method of growing same and method of producing same |
| 05/13/2004 | US20040089630 Surface modification method |
| 05/13/2004 | US20040089410 Bulk synthesis of long nanotubes of transition metal chalcogenides |
| 05/13/2004 | US20040089233 Deposition methods utilizing microwave excitation |
| 05/13/2004 | US20040089225 Integrated circuits, semiconductor |
| 05/13/2004 | US20040089222 GaN single crystal substrate and method of making the same |
| 05/12/2004 | EP1021586A4 A rapid thermal processing barrel reactor for processing substrates |
| 05/12/2004 | CN1149640C Semiconductor thin film and thin film device |
| 05/12/2004 | CN1149638C Cubic crystal nitride semiconductor device and its mfg. method |
| 05/11/2004 | US6733591 Method and apparatus for producing group-III nitrides |
| 05/06/2004 | WO2004038767A2 Doped nanoscale wires and method of manufacture |
| 05/06/2004 | WO2003054256B1 Method and device for depositing crystalline layers on crystalline substrates |
| 05/06/2004 | US20040087117 Measuring reflection of sample; illumination of zones; forming model; test structure of optical monitoring; layer of alternating patterned dielectrics with layer of flat reflecting material; multilayer three-dimensional layout |
| 05/06/2004 | US20040087055 Semiconductor device and method of making same |
| 05/06/2004 | US20040086434 Down-stream radical generation by employing a source of electromagnetic excitation such as plasma source (RF or microwave) that can be pulsed to generate radicals from plasma |
| 05/06/2004 | US20040084147 Valve assemblies for use with a reactive precursor in semiconductor processing |
| 05/06/2004 | US20040083949 Sequential chemical vapor deposition |
| 05/06/2004 | EP1415022A1 System and method for producing synthetic diamond |
| 05/06/2004 | EP1415017A1 Rotating susceptor and method of processing substrates |
| 05/06/2004 | DE19937513B4 Vorrichtungen und Verfahren zur gleichverteilten Gasinjektion bei der Behandlung von Halbleitersubstraten Devices and methods for uniformly distributed gas injection in the treatment of semiconductor substrates, |
| 05/05/2004 | CN1493717A Evaporating/ feeding system for liquid organic metal compound |
| 05/04/2004 | US6730611 Nitride semiconductor growing process |
| 05/04/2004 | US6730164 Systems and methods for forming strontium- and/or barium-containing layers |
| 04/29/2004 | WO2004035878A1 Hydride vpe reactor |
| 04/29/2004 | WO2004012227A3 Method for producing by vapour-phase epitaxy a gallium nitride film with low defect density |
| 04/29/2004 | WO2004007794A3 Pulsed nucleation deposition of tungsten layers |
| 04/29/2004 | US20040081758 On support by catalytically depositing carbon out of vapor phase; catalyst layer deposited without current based on nickel or cobalt is applied to support, thermally activated before depositing carbon out of vapor phase |
| 04/29/2004 | US20040079958 Method for manufacturing gallium nitride compound semiconductor |
| 04/29/2004 | US20040079280 Combines deposition of synthetic diamond films with reactive etching processes; forming diamond nuclei on substrate, growing layer of textured diamond film on substrate, etching textured diamond film |
| 04/29/2004 | US20040079279 Epitaxial CoSi2 on MOS devices |
| 04/29/2004 | US20040079277 Method for forming suspended microstructures |
| 04/28/2004 | EP1413644A2 Thin-film deposition device |
| 04/28/2004 | EP1412971A2 Epitaxial semiconductor on insulator (soi) structures and devices |
| 04/28/2004 | EP1412552A1 Method for the production of coated substrates |
| 04/27/2004 | US6727169 Method of making conformal lining layers for damascene metallization |
| 04/27/2004 | US6726769 Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition |
| 04/27/2004 | US6726767 Layer processing |
| 04/22/2004 | WO2004033768A1 Lateral movement of screw dislocations during homoepitaxial growth and devices yielded therefrom free of the detrimental effectsof the screw dislocations |
| 04/22/2004 | WO2002080244A9 Improved process for deposition of semiconductor films |
| 04/22/2004 | US20040077166 Semiconductor crystal growing method and semiconductor light-emitting device |
| 04/22/2004 | US20040076751 Sequential chemical vapor deposition |
| 04/22/2004 | US20040075464 Nanostructures and methods for manufacturing the same |
| 04/22/2004 | US20040075105 Semiconductor heterostructures having reduced dislocation pile-ups and related methods |
| 04/22/2004 | US20040074438 Novel method to reduce resistivity of atomic layer tungsten chemical vapor depositon |
| 04/22/2004 | US20040074437 Method of growing single crystal Gallium Nitride on silicon substrate |
| 04/22/2004 | DE10296662T5 Systeme und Verfahren zum epitaxialen Aufwachsen von Filmen auf ein Halbleitersubstrat Systems and methods for epitaxial growth of films on a semiconductor substrate |
| 04/22/2004 | DE10247921A1 Hydride vapor phase epitaxy reactor, to produce pseudo-substrates for electronic components, deposits layers of crystalline substrates from a gas phase with increased growth rates |
| 04/21/2004 | EP1411545A1 Vapor growth method and vapor growth device |
| 04/21/2004 | EP1411155A1 3c-sic nanowhisker synthesizing method and 3c-sic nanowhisker |
| 04/21/2004 | EP1411154A1 Oxide high-critical temperature superconductor acicular crystal and its production method |
| 04/21/2004 | CN1491435A Method and apparatus for transferring heat from substrate to chuck |
| 04/21/2004 | CN1491299A Semiconductor crystal growing method and semiconductor light-emitting device |
| 04/20/2004 | US6724017 In a two-dimensional or three-dimensional lattice; coulomb blocking devices using quantum dots. |
| 04/20/2004 | US6723665 Process for manufacturing semiconductor integrated circuit device including treatment of gas used in the process |
| 04/20/2004 | US6723622 Method of forming a germanium film on a semiconductor substrate that includes the formation of a graded silicon-germanium buffer layer prior to the formation of a germanium layer |
| 04/15/2004 | WO2004031457A1 Method and apparatus for forming epitaxial layers |
| 04/15/2004 | WO2004017365A3 Deposition of amorphous silicon-containing films |
| 04/15/2004 | US20040072410 GaN single crystal substrate and method of making the same |
| 04/15/2004 | US20040072381 Domain epitaxy for thin film growth |
| 04/15/2004 | US20040069612 Substrate processing apparatus and substrate processing method |
| 04/15/2004 | US20040069231 Chemical vapor deposition process and apparatus thereof |
| 04/15/2004 | US20040069213 Method and device for producing an electronic gaas detector for x-ray detection for imaging |
| 04/15/2004 | US20040069212 Lateral movement of screw dislocations during homoepitaxial growth and devices yielded therefrom free of the detrimental effects of screw dislocations |
| 04/15/2004 | US20040069209 Heteroepitaxial diamond and diamond nuclei precursors |
| 04/14/2004 | EP0963458B1 Process for low temperature cvd using bi-carboxylates |
| 04/14/2004 | EP0931186B1 A device for epitaxially growing objects and method for such a growth |
| 04/14/2004 | CN1489644A Susceptorless reactor for growing epitaxial layers by chemical vapor deposition |
| 04/13/2004 | US6720531 Temperature uniformity during chemical vapor deposition |
| 04/13/2004 | US6719842 Ammonia for use in manufacture of GaN-type compound semiconductor and method for manufacturing GaN-type compound semiconductor |
| 04/08/2004 | WO2003103031A3 Formation of lattice-tuning semiconductor substrates |
| 04/08/2004 | WO2003099707A3 Method of altering the properties of a thin film and substrate implementing said method |
| 04/08/2004 | WO2003087431A3 Deposition methods utilizing phased array microwave excitation, and deposition apparatuses |
| 04/08/2004 | WO2003054929A3 Method for depositing iii-v semiconductor layers on a non-iii-v substrate |
| 04/08/2004 | US20040067648 Crystal film, crystal substrate, and semiconductor device |
| 04/08/2004 | US20040067641 Gas distribution system for cyclical layer deposition |
| 04/08/2004 | US20040065889 Semiconductor wafer, semiconductor device, and methods for fabricating the same |
| 04/08/2004 | US20040065261 Truncated dummy plate for process furnace |
| 04/08/2004 | US20040065253 Method of growing oxide thin films |
| 04/07/2004 | EP1405333A1 Apparatus and method of making a slip free wafer boat |
| 04/07/2004 | EP1405018A2 Wafer boat with arcuate wafer support arms |
| 04/07/2004 | EP1404903A1 Process chamber with a base with sectionally different rotational drive and layer deposition method in such a process chamber |
| 04/07/2004 | EP1404902A1 High surface quality gan wafer and method of fabricating same |
| 04/07/2004 | EP1404891A1 Cvd system comprising a thermally differentiated substrate support |
| 04/07/2004 | EP1252364B1 Apparatus and method for epitaxially processing a substrate |
| 04/06/2004 | US6718127 Heating device of the light irradiation type |
| 04/06/2004 | US6716795 Useful where an electronically active layer is deposited on the buffer layer |
| 04/06/2004 | US6716751 Dopant precursors and processes |
| 04/06/2004 | US6716724 Method of producing 3-5 group compound semiconductor and semiconductor element |
| 04/06/2004 | US6716713 Dopant precursors and ion implantation processes |
| 04/06/2004 | US6716655 Group III nitride compound semiconductor element and method for producing the same |
| 04/06/2004 | US6716479 Forming flexibible thin films via chemical vapor deposition, pulse-laser deposition, molecular beam epitaxy, and sputtering; acoustics; telecommunications |
| 04/06/2004 | US6716289 Rigid gas collector for providing an even flow of gasses |
| 04/06/2004 | US6716288 Reactor for manufacturing a semiconductor device |
| 04/01/2004 | WO2004027844A2 Method for the production of a composite sicoi-type substrate comprising an epitaxy stage |
| 04/01/2004 | WO2004027127A1 Acicular silicon crystal and process for producing the same |
| 04/01/2004 | WO2004027126A1 Semiconductor crystal of group iii-v compound |
| 04/01/2004 | WO2004027123A1 Single crystal diamond |
| 04/01/2004 | US20040063335 Haze-free BST films |
| 04/01/2004 | US20040062863 Multilayer; overcoating substrate with dielectric; atomic layer deposition |
| 04/01/2004 | US20040062708 Process for the synthesis of nanotubes of transition metal dichalcogenides |