| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 06/24/2004 | WO2004053187A1 Susceptor system________________________ |
| 06/24/2004 | WO2004039731A3 Nanostructures produced by phase-separation during growth of (iii-v)1-x(iv2)x alloys |
| 06/24/2004 | US20040121616 Method for bottomless deposition of barrier layers in integrated circuit metallization schemes |
| 06/24/2004 | US20040119067 Gallium nitride materials and methods |
| 06/23/2004 | EP1432015A2 Semiconductor and semiconductor substrate, method of manufacturing the same, and semiconductor device |
| 06/23/2004 | EP1431426A2 Substrate for epitaxial growth |
| 06/23/2004 | CN1507506A High-resisting silicon carbide substrate for semiconductor devices with high breakdown voltage |
| 06/23/2004 | CN1155053C Device and method for handling substrates in epitaxial induction reactors |
| 06/22/2004 | US6753506 System and method of fast ambient switching for rapid thermal processing |
| 06/22/2004 | US6752874 Apparatus for perpendicular-type ultra vacuum chemical vapor deposition |
| 06/17/2004 | WO2004051725A1 Epitaxial growing method and substrate for epitaxial growth |
| 06/17/2004 | WO2004051718A1 3-5 group compound semiconductor and method for preparation thereof |
| 06/17/2004 | WO2004009492A3 Diamondoid-based components in nanoscale construction |
| 06/17/2004 | US20040115941 Epitaxially coated semiconductor wafer and process for producing it |
| 06/17/2004 | US20040115938 Method for producing a chalcogenide-semiconductor layer of the abc2 type with optical process monitoring |
| 06/17/2004 | US20040115917 Group III nitride compound semiconductor device and method of producing the same |
| 06/17/2004 | US20040115916 Selective placement of dislocation arrays |
| 06/17/2004 | US20040115876 Method of manufacturing silicon carbide film |
| 06/17/2004 | US20040115854 Method of MOCVD growth of compounds including GaAsN alloys using an ammonia precursor and radiation |
| 06/17/2004 | US20040115853 Growth of III-nitride films on mismatched substrates without conventional low temperature nucleation layers |
| 06/17/2004 | US20040113236 Semiconductor wafer and method for producing the same |
| 06/17/2004 | US20040112279 Framework assisted crystal growth |
| 06/16/2004 | EP1429374A2 Growth of III-Nitride films on mismatched substrates without conventional low temperature nucleation layers |
| 06/16/2004 | EP1428911A1 Framework assisted crystal growth |
| 06/15/2004 | US6750130 Heterointegration of materials using deposition and bonding |
| 06/15/2004 | US6750121 Apparatus and method for forming single crystalline nitride substrate using hydride vapor phase epitaxy and laser beam |
| 06/15/2004 | US6750120 Method and apparatus for MOCVD growth of compounds including GaAsN alloys using an ammonia precursor with a catalyst |
| 06/15/2004 | US6750119 Low temperature growth technique is described for incorporating carbon epitaxially into si and sige with very abrupt and well defined junctions, without any associated oxygen background contamination. |
| 06/15/2004 | US6749957 Method for fabricating a III nitride film, substrate for epitaxial growth, III nitride film, epitaxial growth substrate for III nitride element and III nitride element |
| 06/15/2004 | US6749687 In situ growth of oxide and silicon layers |
| 06/15/2004 | US6749686 Crystal growth method of an oxide and multi-layered structure of oxides |
| 06/15/2004 | US6749684 Method for improving CVD film quality utilizing polysilicon getterer |
| 06/10/2004 | WO2004049405A1 Backside heating chamber for emissivity independent thermal processes |
| 06/10/2004 | WO2004048258A2 Method for forming carbon nanotubes |
| 06/10/2004 | WO2004048257A2 Method for forming carbon nanotubes |
| 06/10/2004 | WO2003054929B1 Method for depositing iii-v semiconductor layers on a non-iii-v substrate |
| 06/10/2004 | US20040108506 Methods of forming a high conductivity diamond film and structures formed thereby |
| 06/10/2004 | US20040107897 Atomic layer deposition apparatus and method for preventing generation of solids in exhaust path |
| 06/10/2004 | US20040107895 Quartz thin film |
| 06/10/2004 | US20040107891 Method for producing group III nitride compound semiconductor substrate |
| 06/09/2004 | EP1427000A1 Growth of a single crystal region of a III-V compound on a single crystal silicon substrate |
| 06/09/2004 | EP1426328A2 Method for manufacturing of uniformly sized and controled semi-conductor nano structures by CVD process on dieletric |
| 06/09/2004 | EP1425784A1 Method for the production of iii-v- nitride-conductor-based semiconductor layers |
| 06/09/2004 | EP1425434A1 Method for coating oxidizable materials with oxide-containing layers |
| 06/09/2004 | CN1503327A Relaxed, low-defect SGOI for strained Si CMOS applications |
| 06/09/2004 | CN1153259C Semiconductor substrate and thin-film semiconductive member, and method for making thereof |
| 06/08/2004 | US6747317 Semiconductor device |
| 06/08/2004 | US6746941 Semiconductor wafer and production method therefor |
| 06/08/2004 | US6746908 Temperature controlling method, thermal treating apparatus, and method of manufacturing semiconductor device |
| 06/08/2004 | US6746787 Manufacturing method of silicon carbide single crystals |
| 06/03/2004 | WO2004046427A1 Optical quality diamond material |
| 06/03/2004 | US20040104392 Production method for light emitting element abstract: |
| 06/03/2004 | US20040104384 Growth of high temperature, high power, high speed electronics |
| 06/02/2004 | EP1424724A1 Chemical vapor phase epitaxial device |
| 06/02/2004 | EP1424410A1 Semiconductor crystal producing method |
| 06/02/2004 | EP1424409A1 Semiconductor wafer and its manufacturing method |
| 06/02/2004 | EP1424405A2 Method and apparatus for fabricating coated substrates |
| 06/02/2004 | EP1423558A2 Susceptor with epitaxial growth control devices and epitaxial reactor using the same |
| 06/02/2004 | EP1423259A1 Free-standing (al, ga, in)n and parting method for forming same |
| 06/02/2004 | CN1502117A 半导体晶片及其制造方法 A semiconductor wafer and manufacturing method thereof |
| 06/02/2004 | CN1500919A Method for preparing gallium nitride single crystal film |
| 06/01/2004 | US6744076 Single crystalline aluminum nitride film, method of forming the same, base substrate for group III element nitride film, light emitting device and surface acoustic wave device |
| 06/01/2004 | US6743738 Dopant precursors and processes |
| 06/01/2004 | US6743291 Method of fabricating a CMOS device with integrated super-steep retrograde twin wells using double selective epitaxial growth |
| 05/27/2004 | WO2004044958A2 Composition and method for low temperature deposition of silicon-containing films |
| 05/27/2004 | WO2003087431B1 Deposition methods utilizing phased array microwave excitation, and deposition apparatuses |
| 05/27/2004 | US20040101460 Air pollution control during semiconductor forming; removal trace elements; circulating polishing scrubbers |
| 05/27/2004 | US20040099871 Monocrystalline gallium nitride localized substrate and manufacturing method thereof |
| 05/27/2004 | US20040099217 Uniform temperature workpiece holder |
| 05/27/2004 | US20040099208 Method for forming carbon nanotubes |
| 05/26/2004 | EP1422748A1 Group iii nitride semiconductor film and its production method |
| 05/26/2004 | EP1422746A2 Monocrystalline gallium nitride localized substrate and manufacturing method thereof |
| 05/26/2004 | EP1421607A2 Improved process for deposition of semiconductor films |
| 05/26/2004 | EP0988407B1 Method for producing coated workpieces, which are coated with an epitactic layer |
| 05/26/2004 | CN1500160A Method for mfg. ZnTe compound semiconductor single crystal ZnTe compound semiconductor single crystal, and semiconductor device |
| 05/25/2004 | US6740421 Rolling process for producing biaxially textured substrates |
| 05/25/2004 | US6740167 Device for mounting a substrate and method for producing an insert for a susceptor |
| 05/25/2004 | CA2142307C Methods and apparati for producing fullerenes |
| 05/21/2004 | WO2004042830A1 Nanostructure, electronic device having such nanostructure and method of preparing nanostructure |
| 05/21/2004 | WO2004042798A2 Apparatus and method for treating objects with radicals generated from plasma |
| 05/21/2004 | WO2004027844A3 Method for the production of a composite sicoi-type substrate comprising an epitaxy stage |
| 05/20/2004 | US20040096582 Low temperature vapor deposition; using organosilicon compound; thin film semiconductor |
| 05/20/2004 | US20040094773 Dissimilar substrate having a first major surface offangled from a second major surface; nitride semiconductor layer in a lateral direction; and an active nitride semiconductor layer containing indium on the first nitride layer |
| 05/20/2004 | US20040094763 Relaxed, low-defect SGOI for strained Si CMOS applications |
| 05/20/2004 | US20040094249 Aluminum alloy sheet excellent in formability and hardenability during baking of coating and method for production thereof |
| 05/20/2004 | US20040094084 Method for growing GaN compound semiconductor crystal and semiconductor substrate |
| 05/19/2004 | EP1420437A1 METHOD OF PRODUCING SEMICONDUCTOR THIN FILM, METHOD OF PRODUCING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, INTEGRATED CIRCUIT, ELECTROOPTICAL DEVICE AND ELECTRONIC APPARATUS |
| 05/19/2004 | EP1420088A1 High-temperature superconductive film having flat surface |
| 05/19/2004 | EP1419520A2 System and method for fast ambient gas switching in rapid thermal processing |
| 05/19/2004 | EP1334222B1 Cvd reactor with graphite-foam insulated, tubular susceptor |
| 05/19/2004 | DE10250915A1 Deposition of material on silicon carbide substrate wafer, comprises preparing wafer with growth- and thermal radiation absorption surfaces, then heating wafer for MOVPE deposition |
| 05/19/2004 | CN1150631C Manufacturing method of quantum wires |
| 05/18/2004 | US6738683 Apparatus and method for cleaning a bell jar in a barrel epitaxial reactor |
| 05/18/2004 | US6737361 Method for H2 Recycling in semiconductor processing system |
| 05/18/2004 | US6736894 Method of manufacturing compound single crystal |
| 05/13/2004 | WO2004040047A1 Single crystal base thin film |
| 05/13/2004 | WO2004040046A1 Method for forming thin film on basic material through intermediate layer |
| 05/13/2004 | WO2004039731A2 Nanostructures produced by phase-separation during growth of (iii-v)1-x(iv2)x alloys |
| 05/13/2004 | WO2004012243A3 Selective placement of dislocation arrays |
| 05/13/2004 | US20040092043 Semiconductor manufacturing method and semiconductor manufacturing apparatus |