| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 08/04/2004 | CN1517454A Method of preparing oxide film by molecular beam epitaxy |
| 08/03/2004 | US6770914 III nitride semiconductor substrate for ELO |
| 08/03/2004 | US6770379 Susceptor for semiconductor manufacturing equipment and process for producing the same |
| 08/03/2004 | US6770137 Crucible; seed crystal; pressure of the mixture gas in the growth room is kept larger than that of the mixture gas after exhausted from the crucible. |
| 07/29/2004 | WO2004063430A1 High-speed diamond growth using a microwave plasma in pulsed mode |
| 07/29/2004 | WO2004024981A3 Precursor material delivery system for atomic layer deposition |
| 07/29/2004 | US20040147098 Method for forming, by CVD, nanostructures of semi-conductor material of homogeneous and controlled size on dielectric material |
| 07/29/2004 | US20040147096 Method of manufacturing Group III nitride substrate |
| 07/29/2004 | US20040144970 Nanowires |
| 07/29/2004 | US20040144323 Epitaxial wafer production apparatus and susceptor structure |
| 07/29/2004 | US20040144313 Incorporation of an impurity into a thin film |
| 07/29/2004 | US20040144301 Method for growth of bulk crystals by vapor phase epitaxy |
| 07/29/2004 | US20040144300 Method of manufacturing group III nitride substrate and semiconductor device |
| 07/29/2004 | DE10301949A1 CVD reactor for producing a silicon carbide single crystalline layer comprises a reaction chamber, a susceptor arranged in the reaction chamber, and a gas inlet with a diffuser and a homogenizing unit |
| 07/28/2004 | EP1441426A1 Method for fabricating semiconductor light emitting element, semiconductor light emitting element, method for fabricating semiconductor element, semiconductor element, method for fabricating element and element |
| 07/28/2004 | EP1440461A2 High resistivity silicon carbide single crystal |
| 07/28/2004 | EP1440180A1 Method and device for depositing especially crystalline layers onto especially crystalline substrates |
| 07/28/2004 | CN1516238A Nitride semiconductor growth method, nitride semiconductor substrate and device |
| 07/28/2004 | CN1515712A Method for mfg. graphite nano fiber, electronic transmitting source and display element |
| 07/28/2004 | CN1159750C Method of growing nitride semiconductors |
| 07/27/2004 | US6767582 Method of modifying source chemicals in an ald process |
| 07/22/2004 | WO2004061969A1 Growth of planar, non-polar a-plane gallium nitride by hydride vapor phase epitaxy |
| 07/22/2004 | WO2004061923A1 Gallium nitride crystal, homoepitaxial gallium-nitride-based devices and method for producing same |
| 07/22/2004 | WO2004061909A1 Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy |
| 07/22/2004 | WO2004061167A1 LOW-RESISTANCE n TYPE SEMICONDUCTOR DIAMOND AND PROCESS FOR PRODUCING THE SAME |
| 07/22/2004 | US20040142558 Apparatus and method for atomic layer deposition on substrates |
| 07/22/2004 | US20040142550 Method for producing III-IV group compound semiconductor layer, method for producing semiconductor light emitting element, and vapor phase growing apparatus |
| 07/22/2004 | US20040140535 Semiconductor device, method of forming epitaxial film, and laser ablation device |
| 07/22/2004 | CA2474909A1 Low-resistance n type semiconductor diamond and process for producing the same |
| 07/21/2004 | EP1439572A2 Method of manufacturing group III nitride substrate |
| 07/21/2004 | EP1439246A1 Silicon carbide and method for producing the same |
| 07/21/2004 | EP1315854B1 Apparatus and method for cleaning a bell jar in a barrel epitaxial reactor |
| 07/21/2004 | CN1514470A Crystallization method of amorphous silicon for thin film transistor |
| 07/21/2004 | CN1514469A Crystal mask, amorphous silicon crystallization method and method of manufacturing array base plate using same |
| 07/21/2004 | CN1158692C Apparatus for manufacturing semiconductor device and its manufacturing method |
| 07/20/2004 | US6765244 III nitride film and a III nitride multilayer |
| 07/20/2004 | US6764926 Method for obtaining high quality InGaAsN semiconductor devices |
| 07/20/2004 | US6764871 Method for fabricating a nitride semiconductor device |
| 07/20/2004 | US6764864 BST on low-loss substrates for frequency agile applications |
| 07/20/2004 | CA2114980C Method and apparatus for preparing crystalline thin-films for solid-state lasers |
| 07/15/2004 | WO2004059048A1 Diamond film-forming silicon and its manufacturing method |
| 07/15/2004 | WO2004059047A1 Diamond film-forming silicon and its manufacturing method |
| 07/15/2004 | WO2004059046A2 Tunable cvd diamond structures |
| 07/15/2004 | US20040138489 Composition and method for low temperature deposition of silicon-containing films |
| 07/15/2004 | US20040137732 Process for producing an epitaxial layer of gallium nitride |
| 07/15/2004 | US20040137671 Method of crystallizing amorphous silicon for use in thin film transistor |
| 07/15/2004 | US20040137657 Manufacturing methods for semiconductor devices with multiple III-V material layers |
| 07/15/2004 | US20040134417 Mask for crystallizing, method of crystallizing amorphous silicon and method of manufacturing array substrate using the same |
| 07/15/2004 | US20040134416 Production method of opto-electronic device array |
| 07/15/2004 | DE10261362A1 Semiconductor substrate holder for epitaxial processes, has structure designed to equalize temperature over substrate placed on or near it |
| 07/15/2004 | DE10260860A1 Silicon germanium micro-mechanical layer comprises upper and lower surfaces and doping material whose concentration varies through layer |
| 07/14/2004 | EP1437427A1 Method for manufacturing in-plane lattice constant adjusting substrate and in-plane lattice constant adjusting substrate |
| 07/14/2004 | EP1437327A1 Method for producing silicon |
| 07/14/2004 | EP1436448A1 Low temperature epitaxial growth of quaternary wide bandgap semiconductors |
| 07/14/2004 | EP1049820B9 Method for epitaxial growth on a substrate |
| 07/14/2004 | CN1513210A Method for producing light-emitting device |
| 07/13/2004 | US6762420 Organic film vapor deposition method and a scintillator panel |
| 07/13/2004 | US6762131 Method for large-scale fabrication of atomic-scale structures on material surfaces using surface vacancies |
| 07/08/2004 | WO2004057655A1 Process for producing compound semiconductor, apparatus therefor, infrared emitting element and infrared receiving element |
| 07/08/2004 | WO2004057631A2 Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy |
| 07/08/2004 | WO2004012243A9 Selective placement of dislocation arrays |
| 07/08/2004 | WO2002065516A8 Improved process for deposition of semiconductor films |
| 07/08/2004 | US20040132298 Apparatus for fabricating a III-V nitride film |
| 07/08/2004 | US20040131866 For use as substrate for a semiconductor device |
| 07/08/2004 | US20040130029 Conformal lining layers for damascene metallization |
| 07/08/2004 | US20040129219 Atomic layer deposition apparatus and method |
| 07/08/2004 | US20040129216 Molecular beam epitaxy equipment |
| 07/08/2004 | US20040129215 Method for depositing especially crystalline layers from the gas phase onto especially crystalline substrates |
| 07/08/2004 | US20040129213 Chemical vapor deposition reactor |
| 07/08/2004 | US20040129203 Silicon tube formed of bonded staves |
| 07/07/2004 | EP1435652A1 Silicon monocrystal wafer processing device, and method of manufacturing silicon monocrystal wafer and silicon epitaxial wafer |
| 07/07/2004 | EP1434898A1 Methods for the production of components and ultra high vacuum cvd reactor |
| 07/06/2004 | US6759715 Epitaxial base substrate and epitaxial substrate |
| 07/06/2004 | US6759310 Method for making a semiconductor substrate comprising a variant porous layer |
| 07/06/2004 | US6759018 Method for point-of-use treatment of effluent gas streams |
| 07/06/2004 | US6758909 Gas port sealing for CVD/CVI furnace hearth plates |
| 07/01/2004 | WO2004055876A1 Method for preparation of ferroelectric single crystal film structure using deposition method |
| 07/01/2004 | WO2004055874A1 Method for producing silicon epitaxial wafer |
| 07/01/2004 | WO2003065465A3 Boron phosphide-based semiconductor device, production method thereof, light-emitting diode and boron phosphide-based semiconductor layer |
| 07/01/2004 | US20040127042 Compound crystal and method of manufacturing same |
| 07/01/2004 | US20040126954 Deposition methods with time spaced and time abutting precursor pulses |
| 07/01/2004 | US20040124501 Bonding metallic substrates; reducing thickness |
| 07/01/2004 | US20040124435 Semiconductor on single crystal substrate; reducing dislociation density |
| 07/01/2004 | US20040124348 Controlling surface chemistry on solid substrates |
| 07/01/2004 | US20040124131 Precursor material delivery system for atomic layer deposition |
| 07/01/2004 | US20040123796 Production method for semiconductor crystal and semiconductor luminous element |
| 06/30/2004 | EP1432844A1 Apparatus for inverted cvd |
| 06/30/2004 | EP1375691A9 Aluminum alloy sheet excellent in formability and hardenability during baking of coating and method for production thereof |
| 06/30/2004 | CN1508843A Substrate locally with mono-crystalline gallium nitride and its preparing method |
| 06/30/2004 | CN1508283A Device for supplying gas for epitaxial growth |
| 06/30/2004 | CN1155993C Fabrication of gallium nitride layers by lateral growth |
| 06/29/2004 | US6756611 Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device |
| 06/29/2004 | US6756325 Method for producing a long wavelength indium gallium arsenide nitride(InGaAsN) active region |
| 06/29/2004 | US6756246 Method for fabricating III-V group compound semiconductor |
| 06/24/2004 | WO2004053965A1 Free standing substrates by laser-induced decoherency and regrowth |
| 06/24/2004 | WO2004053210A1 A substrate for epitaxy and a method of preparing the same |
| 06/24/2004 | WO2004053209A1 A template type substrate and a method of preparing the same |
| 06/24/2004 | WO2004053205A2 Porous material formation by chemical vapor deposition onto colloidal crystal templates |
| 06/24/2004 | WO2004053189A1 Support system for a treatment apparatus |
| 06/24/2004 | WO2004053188A1 Susceptor system |