Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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09/16/2004 | US20040177803 Single crystal diamond |
09/16/2004 | CA2495908A1 Nitride semiconductor device and method for manufacturing same |
09/15/2004 | EP1456872A1 Method for depositing iii-v semiconductor layers on a non iii-v substrate |
09/15/2004 | EP1456871A1 Susceptor for epitaxial growth and epitaxial growth method |
09/15/2004 | EP1456436A1 Method for producing particles with diamond structure |
09/15/2004 | EP1315853B1 Device for the deposition of, in particular, crystalline layers on, in particular, crystalline substrates |
09/15/2004 | EP1196645B1 Seal means and its application in deposition reactor |
09/15/2004 | CN1529902A Semiconductor device and method of making same |
09/15/2004 | CN1529900A Assembly comprising heat-distribution plate and edge support |
09/15/2004 | CN1166823C Vacuum system and its control system for growth of semiconductor substrate crystal material |
09/14/2004 | US6790278 Method for preparing low-resistant p-type SrTiO3 |
09/10/2004 | WO2004077461A1 Multilayer unit containing electrode layer and dielectric layer |
09/09/2004 | US20040175959 Method for forming silicon epitaxial layer |
09/09/2004 | US20040175939 Susceptor apparatus for inverted type MOCVD reactor |
09/09/2004 | US20040175893 Apparatuses and methods for forming a substantially facet-free epitaxial film |
09/09/2004 | US20040175878 Heating furnace and semiconductor wafer-holding jig assembly and process of manufacturing semiconductor devices |
09/09/2004 | US20040175844 Sacrificial template method of fabricating a nanotube |
09/09/2004 | DE10238135B4 Verfahren zur Herstellung von Gruppe-II-Oxid Schichten mit der Gasphasenepitaxie, Gruppe-II-Oxid Schicht und Gruppe-II-Oxid Halbleiterbauelement A process for preparing Group II oxide layers with the vapor phase epitaxy, Group-II-oxide layer and the group II-oxide semiconductor device |
09/09/2004 | DE10082995B4 Wafer-Haltevorrichtung Wafer holding device |
09/08/2004 | EP0958401B1 Apparatus and method for high density plasma chemical vapor deposition or etching |
09/07/2004 | US6787385 Method of preparing nitrogen containing semiconductor material |
09/07/2004 | US6787181 Dissolving trimethylbismuth and a metal compound in a solvent; forming mist with carrier gas; vaporizing; applying vapor onto integrated circuit substrate to produce thin film superlattice material; completing the fabrication of integrated ciruit |
09/07/2004 | US6786973 Method for depositing in particular crystalline layers, gas-admission element and device for carrying out the method |
09/02/2004 | WO2004075273A1 N-type diamond semiconductor and its manufacturing method |
09/02/2004 | WO2004075272A1 Substrate-processing apparatus and method of producing semiconductor device |
09/02/2004 | WO2004074557A1 Cvd diamond in wear applications |
09/02/2004 | WO2004059046A3 Tunable cvd diamond structures |
09/02/2004 | US20040171493 Oxide high-critical temperature superconductor acicular crystal and its production method |
09/02/2004 | US20040171226 Isotopically pure silicon-on-insulator wafers and method of making same |
09/02/2004 | US20040169225 Isotopically pure silicon-on-insulator wafers and method of making same |
09/02/2004 | US20040168627 Atomic layer deposition of oxide film |
09/02/2004 | US20040168626 Process for forming semiconductor quantum dots with superior structural and phological stability |
09/01/2004 | EP1451857A2 Removing an amorphous oxide from a monocrystalline surface |
09/01/2004 | CN1526158A Susceptor for epitaxial growth and epitaxial growth method |
09/01/2004 | CN1526062A Wafer boat with arcuate wafer support arms |
09/01/2004 | CN1525532A Group iii nitride compound semiconductor device and producing method therefor |
09/01/2004 | CN1164417C Silicon carbide epitaxial layers grown on substrates offcut towards <1100> |
08/31/2004 | US6784085 MIIIN based materials and methods and apparatus for producing same |
08/31/2004 | US6784074 Defect-free semiconductor templates for epitaxial growth and method of making same |
08/31/2004 | US6783849 Reacting substrate having a surface-exposed monolayer with a bifunctional reagent that reacts with exposed reactive group, producing coupling layer having exposed reactive group with which reactive group of selected compound can react |
08/31/2004 | US6783592 Lateral movement of screw dislocations during homoepitaxial growth and devices yielded therefrom free of the detrimental effects of screw dislocations |
08/31/2004 | US6783591 Laser thermal annealing method for high dielectric constant gate oxide films |
08/31/2004 | US6783590 Method of growing a thin film onto a substrate |
08/26/2004 | WO2004073045A2 Epitaxial growth of a zirconium diboride layer on silicon substrates |
08/26/2004 | WO2004073024A2 Method and apparatus for making continuous films ofa single crystal material |
08/26/2004 | WO2004072319A2 Free-standing diamond structures and methods |
08/26/2004 | WO2004044958A3 Composition and method for low temperature deposition of silicon-containing films |
08/26/2004 | WO2003069029A8 A susceptor provided with indentations and an epitaxial reactor which uses the same |
08/26/2004 | US20040166358 Multi-layered unit |
08/26/2004 | US20040164380 Semiconductor and semiconductor substrate, method of manufacturing the same, and semiconductor device |
08/26/2004 | US20040164308 Method of manufacturing a semiconductor light emitting device, semiconductor light emitting device, method of manufacturing a semiconductor device, semiconductor device, method of manufacturing a device, and device |
08/26/2004 | US20040164089 Method and apparatus for delivering precursors to a plurality of epitaxial reactor sites |
08/26/2004 | US20040163585 Method for manufacturing polycrystalline silicon thin film and thin film transistor fabricated using polycrystalline silicon thin film manufactured by the manufacturing |
08/26/2004 | CA2515196A1 Free-standing diamond structures and methods |
08/25/2004 | EP1449407A2 Induction heating devices and methods for controllably heating an article |
08/25/2004 | EP1025278A4 Vertically-stacked process reactor and cluster tool system for atomic layer deposition |
08/25/2004 | CN1163955C Susceptor for semiconductor manufacturing equipment and process for producing the same |
08/25/2004 | CN1163640C Single crystal SiC and process for preparing the same |
08/24/2004 | US6780735 Method to increase carbon and boron doping concentrations in Si and SiGe films |
08/19/2004 | WO2004070091A1 Substrate for forming magnetic garnet single-crystal film, process for producing the same, optical device and process for producing the same |
08/19/2004 | WO2004038767A3 Doped nanoscale wires and method of manufacture |
08/19/2004 | US20040161911 Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD |
08/19/2004 | US20040161875 Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD |
08/17/2004 | US6777714 Crystalline silicon semiconductor device and method for fabricating same |
08/17/2004 | US6777690 Organic film vapor deposition method and a scintillator panel |
08/17/2004 | US6776842 First thin epitaxial deposition, then an anneal; the conditions and duration such that arsenic diffusion length is lower than thickness of the layer, then second epitaxial deposition to desired thickness; avoids autodoping of arsenic |
08/17/2004 | US6776805 Semiconductor manufacturing apparatus having a moisture measuring device |
08/12/2004 | WO2004068556A2 Semiconductor structures with structural homogeneity |
08/12/2004 | US20040157446 Vapor growth method and vapor growth device |
08/12/2004 | US20040157412 Method to produce germanium layers |
08/12/2004 | US20040157358 Group III nitride semiconductor film and its production method |
08/12/2004 | US20040157357 Compound semiconductor structure including an epitaxial perovskite layer and method for fabricating semiconductor structures and devices |
08/12/2004 | US20040157183 Heating system, method for heating a deposition or oxidation reactor, and reactor including the heating system |
08/12/2004 | US20040156456 Avoidance mechanism for co-channel interference in a wireless network |
08/12/2004 | US20040155255 the ratio of activation of the dopants can be increased by the method of co-doping two dopants (co-doping method) into the crystal by using a doping amount smaller than that in the earlier technology; improved crystallinity |
08/12/2004 | US20040155057 Chemical delivery systems and methods of delivery |
08/12/2004 | US20040154544 Arrangement comprising a support body and a substrate holder which is driven in rotation and gas-supported thereon |
08/12/2004 | US20040154537 Diffusion furnace used for manufacturing integrated circuits and method for cooling the diffusion furnace |
08/12/2004 | US20040154526 Free-standing diamond structures and methods |
08/11/2004 | EP1445355A2 Crystal growth method of nitride semiconductor |
08/11/2004 | EP1444390A2 Apparatus and method for diamond production |
08/11/2004 | EP0989211B1 Process for obtaining diamond layers by gaseous-phase synthesis |
08/11/2004 | CN1519581A 闪烁体面板 The scintillator panel |
08/10/2004 | US6774410 Epitaxial growth of nitride semiconductor device |
08/10/2004 | US6774019 Incorporation of an impurity into a thin film |
08/10/2004 | US6773616 Formation of nanoscale wires |
08/10/2004 | US6773508 Single crystal silicon carbide thin film fabrication method and fabrication apparatus of the same |
08/10/2004 | US6773507 Apparatus and method for fast-cycle atomic layer deposition |
08/10/2004 | US6773504 Oxygen doping method to gallium nitride single crystal substrate and oxygen-doped N-type gallium nitride freestanding single crystal substrate |
08/05/2004 | US20040152312 Method for depositing a material on a substrate wafer |
08/05/2004 | US20040152219 Method and device for depositing layers |
08/05/2004 | US20040150076 Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
08/05/2004 | US20040150003 Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
08/05/2004 | US20040150001 Defect-free semiconductor templates for epitaxial growth |
08/05/2004 | US20040149209 Process and apparatus for the production of carbon nanotubes |
08/05/2004 | US20040149203 Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
08/05/2004 | US20040149202 Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
08/04/2004 | EP1183406B1 Sequential chemical vapor deposition |
08/04/2004 | EP0921214B1 Single crystal silicon carbide and process for preparing the same |
08/04/2004 | CN1518138A Method for manufacturing N0.3 family nitride substrate |