Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
09/2004
09/16/2004US20040177803 Single crystal diamond
09/16/2004CA2495908A1 Nitride semiconductor device and method for manufacturing same
09/15/2004EP1456872A1 Method for depositing iii-v semiconductor layers on a non iii-v substrate
09/15/2004EP1456871A1 Susceptor for epitaxial growth and epitaxial growth method
09/15/2004EP1456436A1 Method for producing particles with diamond structure
09/15/2004EP1315853B1 Device for the deposition of, in particular, crystalline layers on, in particular, crystalline substrates
09/15/2004EP1196645B1 Seal means and its application in deposition reactor
09/15/2004CN1529902A Semiconductor device and method of making same
09/15/2004CN1529900A Assembly comprising heat-distribution plate and edge support
09/15/2004CN1166823C Vacuum system and its control system for growth of semiconductor substrate crystal material
09/14/2004US6790278 Method for preparing low-resistant p-type SrTiO3
09/10/2004WO2004077461A1 Multilayer unit containing electrode layer and dielectric layer
09/09/2004US20040175959 Method for forming silicon epitaxial layer
09/09/2004US20040175939 Susceptor apparatus for inverted type MOCVD reactor
09/09/2004US20040175893 Apparatuses and methods for forming a substantially facet-free epitaxial film
09/09/2004US20040175878 Heating furnace and semiconductor wafer-holding jig assembly and process of manufacturing semiconductor devices
09/09/2004US20040175844 Sacrificial template method of fabricating a nanotube
09/09/2004DE10238135B4 Verfahren zur Herstellung von Gruppe-II-Oxid Schichten mit der Gasphasenepitaxie, Gruppe-II-Oxid Schicht und Gruppe-II-Oxid Halbleiterbauelement A process for preparing Group II oxide layers with the vapor phase epitaxy, Group-II-oxide layer and the group II-oxide semiconductor device
09/09/2004DE10082995B4 Wafer-Haltevorrichtung Wafer holding device
09/08/2004EP0958401B1 Apparatus and method for high density plasma chemical vapor deposition or etching
09/07/2004US6787385 Method of preparing nitrogen containing semiconductor material
09/07/2004US6787181 Dissolving trimethylbismuth and a metal compound in a solvent; forming mist with carrier gas; vaporizing; applying vapor onto integrated circuit substrate to produce thin film superlattice material; completing the fabrication of integrated ciruit
09/07/2004US6786973 Method for depositing in particular crystalline layers, gas-admission element and device for carrying out the method
09/02/2004WO2004075273A1 N-type diamond semiconductor and its manufacturing method
09/02/2004WO2004075272A1 Substrate-processing apparatus and method of producing semiconductor device
09/02/2004WO2004074557A1 Cvd diamond in wear applications
09/02/2004WO2004059046A3 Tunable cvd diamond structures
09/02/2004US20040171493 Oxide high-critical temperature superconductor acicular crystal and its production method
09/02/2004US20040171226 Isotopically pure silicon-on-insulator wafers and method of making same
09/02/2004US20040169225 Isotopically pure silicon-on-insulator wafers and method of making same
09/02/2004US20040168627 Atomic layer deposition of oxide film
09/02/2004US20040168626 Process for forming semiconductor quantum dots with superior structural and phological stability
09/01/2004EP1451857A2 Removing an amorphous oxide from a monocrystalline surface
09/01/2004CN1526158A Susceptor for epitaxial growth and epitaxial growth method
09/01/2004CN1526062A Wafer boat with arcuate wafer support arms
09/01/2004CN1525532A Group iii nitride compound semiconductor device and producing method therefor
09/01/2004CN1164417C Silicon carbide epitaxial layers grown on substrates offcut towards <1100>
08/2004
08/31/2004US6784085 MIIIN based materials and methods and apparatus for producing same
08/31/2004US6784074 Defect-free semiconductor templates for epitaxial growth and method of making same
08/31/2004US6783849 Reacting substrate having a surface-exposed monolayer with a bifunctional reagent that reacts with exposed reactive group, producing coupling layer having exposed reactive group with which reactive group of selected compound can react
08/31/2004US6783592 Lateral movement of screw dislocations during homoepitaxial growth and devices yielded therefrom free of the detrimental effects of screw dislocations
08/31/2004US6783591 Laser thermal annealing method for high dielectric constant gate oxide films
08/31/2004US6783590 Method of growing a thin film onto a substrate
08/26/2004WO2004073045A2 Epitaxial growth of a zirconium diboride layer on silicon substrates
08/26/2004WO2004073024A2 Method and apparatus for making continuous films ofa single crystal material
08/26/2004WO2004072319A2 Free-standing diamond structures and methods
08/26/2004WO2004044958A3 Composition and method for low temperature deposition of silicon-containing films
08/26/2004WO2003069029A8 A susceptor provided with indentations and an epitaxial reactor which uses the same
08/26/2004US20040166358 Multi-layered unit
08/26/2004US20040164380 Semiconductor and semiconductor substrate, method of manufacturing the same, and semiconductor device
08/26/2004US20040164308 Method of manufacturing a semiconductor light emitting device, semiconductor light emitting device, method of manufacturing a semiconductor device, semiconductor device, method of manufacturing a device, and device
08/26/2004US20040164089 Method and apparatus for delivering precursors to a plurality of epitaxial reactor sites
08/26/2004US20040163585 Method for manufacturing polycrystalline silicon thin film and thin film transistor fabricated using polycrystalline silicon thin film manufactured by the manufacturing
08/26/2004CA2515196A1 Free-standing diamond structures and methods
08/25/2004EP1449407A2 Induction heating devices and methods for controllably heating an article
08/25/2004EP1025278A4 Vertically-stacked process reactor and cluster tool system for atomic layer deposition
08/25/2004CN1163955C Susceptor for semiconductor manufacturing equipment and process for producing the same
08/25/2004CN1163640C Single crystal SiC and process for preparing the same
08/24/2004US6780735 Method to increase carbon and boron doping concentrations in Si and SiGe films
08/19/2004WO2004070091A1 Substrate for forming magnetic garnet single-crystal film, process for producing the same, optical device and process for producing the same
08/19/2004WO2004038767A3 Doped nanoscale wires and method of manufacture
08/19/2004US20040161911 Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD
08/19/2004US20040161875 Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD
08/17/2004US6777714 Crystalline silicon semiconductor device and method for fabricating same
08/17/2004US6777690 Organic film vapor deposition method and a scintillator panel
08/17/2004US6776842 First thin epitaxial deposition, then an anneal; the conditions and duration such that arsenic diffusion length is lower than thickness of the layer, then second epitaxial deposition to desired thickness; avoids autodoping of arsenic
08/17/2004US6776805 Semiconductor manufacturing apparatus having a moisture measuring device
08/12/2004WO2004068556A2 Semiconductor structures with structural homogeneity
08/12/2004US20040157446 Vapor growth method and vapor growth device
08/12/2004US20040157412 Method to produce germanium layers
08/12/2004US20040157358 Group III nitride semiconductor film and its production method
08/12/2004US20040157357 Compound semiconductor structure including an epitaxial perovskite layer and method for fabricating semiconductor structures and devices
08/12/2004US20040157183 Heating system, method for heating a deposition or oxidation reactor, and reactor including the heating system
08/12/2004US20040156456 Avoidance mechanism for co-channel interference in a wireless network
08/12/2004US20040155255 the ratio of activation of the dopants can be increased by the method of co-doping two dopants (co-doping method) into the crystal by using a doping amount smaller than that in the earlier technology; improved crystallinity
08/12/2004US20040155057 Chemical delivery systems and methods of delivery
08/12/2004US20040154544 Arrangement comprising a support body and a substrate holder which is driven in rotation and gas-supported thereon
08/12/2004US20040154537 Diffusion furnace used for manufacturing integrated circuits and method for cooling the diffusion furnace
08/12/2004US20040154526 Free-standing diamond structures and methods
08/11/2004EP1445355A2 Crystal growth method of nitride semiconductor
08/11/2004EP1444390A2 Apparatus and method for diamond production
08/11/2004EP0989211B1 Process for obtaining diamond layers by gaseous-phase synthesis
08/11/2004CN1519581A 闪烁体面板 The scintillator panel
08/10/2004US6774410 Epitaxial growth of nitride semiconductor device
08/10/2004US6774019 Incorporation of an impurity into a thin film
08/10/2004US6773616 Formation of nanoscale wires
08/10/2004US6773508 Single crystal silicon carbide thin film fabrication method and fabrication apparatus of the same
08/10/2004US6773507 Apparatus and method for fast-cycle atomic layer deposition
08/10/2004US6773504 Oxygen doping method to gallium nitride single crystal substrate and oxygen-doped N-type gallium nitride freestanding single crystal substrate
08/05/2004US20040152312 Method for depositing a material on a substrate wafer
08/05/2004US20040152219 Method and device for depositing layers
08/05/2004US20040150076 Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
08/05/2004US20040150003 Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
08/05/2004US20040150001 Defect-free semiconductor templates for epitaxial growth
08/05/2004US20040149209 Process and apparatus for the production of carbon nanotubes
08/05/2004US20040149203 Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
08/05/2004US20040149202 Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
08/04/2004EP1183406B1 Sequential chemical vapor deposition
08/04/2004EP0921214B1 Single crystal silicon carbide and process for preparing the same
08/04/2004CN1518138A Method for manufacturing N0.3 family nitride substrate
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