C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth

Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
10/2004
10/21/2004	US20040207288 Method of producing lead zirconate titanate-based thin film, dielectric device and dielectric thin film
10/21/2004	US20040206967 Porous substrate for epitaxial growth, method for manufacturing same, and method for manufacturing III-nitride semiconductor substrate
10/21/2004	US20040206387 formed via radio frequency magnetron sputtering or chemical vapor deposition; epitaxial growth
10/21/2004	US20040206299 Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method
10/21/2004	US20040206297 In situ growth of oxide and silicon layers
10/21/2004	DE102004014940A1 Halbleitervorrichtung, Verfahren zum Aufwachsen eines Nidridhalbleiters und Verfahren zur Herstellung einer Halbleitervorrichtung A semiconductor device, method for growing a Nidridhalbleiters and method of manufacturing a semiconductor device
10/20/2004	EP1468128A2 Method for manufacturing a free-standing substrate made of monocrystalline semi-conductor material
10/19/2004	US6806158 Mixed crystal layer growing method and device, and semiconductor device
10/19/2004	US6805982 Epitaxial substrates and semiconductor devices
10/19/2004	US6805745 High quality, semiconductor-grade, single crystals of silicon carbide; optics, electronics; minimization of gapping between tiles
10/19/2004	US6805744 Method of producing device quality (Al)InGaP alloys on lattice-mismatched substrates
10/14/2004	WO2004020686A3 A hybrid beam deposition system and methods for fabricating zno films, p-type zno films, and zno-based ii-vi compound semiconductor devices
10/14/2004	US20040203232 Methods for treating pluralities of discrete semiconductor substrates
10/14/2004	US20040202875 Structure with substrate, monomolecular layer of polycyclic aromatic compound having defined axis oriented normal to plane of monolayer and covalently attached at one axial end to substrate, second layer with compound attached to first layer
10/14/2004	US20040201030 GaN growth on Si using ZnO buffer layer
10/14/2004	US20040200412 Chemical vapor deposition reactor and process chamber for said reactor
10/14/2004	US20040200407 Low indium content quantum well structures
10/14/2004	US20040200406 Method for growing single crystal GaN on silicon
10/14/2004	DE10297368T5 System und Verfahren zum Erwärmen von Halbleiterwafern durch Optimieren der Absorption elektromagnetischer Energie System and method for heating semiconductor wafers by optimizing the absorption of electromagnetic energy
10/14/2004	DE102004010676A1 Verfahren zur Herstellung eines Halbleiterwafers A process for producing a semiconductor wafer
10/13/2004	EP1466041A1 Coloured diamond
10/13/2004	CN1170957C Processing chamber for atomic layer deposition processes
10/12/2004	US6803546 Thermally processing a substrate
10/12/2004	US6803080 Method of forming crystalline silicon film by CVD
10/12/2004	US6802902 Process for producing an epitaxial layer of gallium nitride
10/12/2004	US6802899 Silicon single crystal wafer and manufacturing process therefor
10/12/2004	US6802712 Heating system, method for heating a deposition or oxidation reactor, and reactor including the heating system
10/07/2004	WO2004086520A1 ZnO SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME
10/07/2004	WO2004086475A1 Substrate treating apparatus and process for producing semiconductor device
10/07/2004	WO2004086473A1 Method of producing high quality relaxed silicon germanium layers
10/07/2004	WO2004086472A1 Method of epitaxial deposition of an n-doped silicon layer
10/07/2004	WO2004085717A1 Formation of thin semiconductor layers by low-energy plasma enhanced chemical vapor deposition and semiconductor heterostructure devices
10/07/2004	WO2004085702A1 Method for depositing compounds on a substrate by means of metalorganic chemical vapor deposition
10/07/2004	WO2004085700A1 Method for the manufacture of a freestanding substrate
10/07/2004	WO2004040046A9 Method for forming thin film on basic material through intermediate layer
10/07/2004	US20040197946 Systems and methods for forming strontium-and/or barium-containing layers
10/07/2004	US20040197936 Method for manufacturing in-plane lattice constant adjusting substrate and in-plane lattice constant adjusting substrate
10/07/2004	US20040197475 chemical vapor deposition of metalloorganic precursors, e.g., Ce 2,2,6,6-tetramethylheptane-3,5-dione, with O2 in a reducing atmosphere containing a nitrogen-hydrogen compound, especially ammonia, hydrazine, diimide and/or hydroxylamine
10/07/2004	US20040194694 Equipment and method for manufacturing silicon carbide single crystal
10/07/2004	US20040194693 Manufacturing method of silicon carbide single crystals
10/07/2004	US20040194690 Coloured diamond
10/07/2004	DE10325629A1 Verfahren zur Abscheidung von Verbindungen auf einem Substrat mittels metallorganischer Gasphasendeposition A process for the deposition of compounds on a substrate by metal organic vapor phase deposition
10/06/2004	EP1465242A1 Semiconductor wafer and method for producing the same
10/06/2004	EP1464735A2 Equipment and method for manufacturing silicon carbide single crystal
10/06/2004	EP1463849A2 Boron doped diamond
10/06/2004	CN1535472A Epitaxial semiconductor on insulator (SOI) structures and devices
10/06/2004	CN1535330A Method for production of coated substrates
10/05/2004	USRE38613 Method for growing a nitride compound semiconductor
10/05/2004	US6800833 Electromagnetically levitated substrate support
10/05/2004	US6800552 Deposition of transition metal carbides
10/05/2004	US6800136 Axial gradient transport apparatus and process
10/05/2004	US6800134 Chemical vapor deposition methods and atomic layer deposition methods
10/05/2004	US6800133 Process for growing a magnesium oxide film on a silicon (100) substrate coated with a cubic silicon carbide butter layer
09/2004
09/30/2004	WO2004084275A2 Method for making group iii nitride devices and devices produced thereby
09/30/2004	WO2004084268A2 Epitaxial semiconductor deposition methods and structures
09/30/2004	WO2004083499A1 PROCESS FOR PRODUCING GaN SUBSTRATE
09/30/2004	WO2004083485A2 Methods and apparatus for atomic layer deposition
09/30/2004	WO2004048257A3 Method for forming carbon nanotubes
09/30/2004	US20040192048 Ammonia for use in manufacture of GaN-type compound semiconductor and method for manufacturing GaN-type compound semiconductor
09/30/2004	US20040191960 Vapor-phase growth method, semiconductor manufacturing method and semiconductor device manufacturing method
09/30/2004	US20040188020 Wafer supporter
09/30/2004	US20040187790 Substrate holder
09/30/2004	US20040187766 Method of fabricating monocrystalline crystals
09/29/2004	EP1462542A1 Chemical vapour deposition
09/29/2004	CN1533593A Substrate for growing gallium nitride, itsproducing method and method for preparing gallium nitride substrate
09/29/2004	CN1168848C Gas injection system for CVD reactors
09/28/2004	US6797416 Use in semiconductor element; vapor deposition, lamination
09/28/2004	US6797336 Multi-component substances and processes for preparation thereof
09/28/2004	US6797334 Method for forming gas cluster and method for forming thin film
09/28/2004	US6797069 Gas driven planetary rotation apparatus and methods for forming silicon carbide layers
09/28/2004	US6797060 Method and apparatus for producing silicon carbide single crystal
09/28/2004	CA2212653C A method for the heat treatment of znse crystal
09/23/2004	WO2004082020A1 Via and trench structures for semiconductor substrates bonded to metallic substrates
09/23/2004	WO2004082003A2 Apparatuses and methods for forming a substantially facet-free epitaxial film
09/23/2004	WO2004081987A2 Sige rectification process
09/23/2004	WO2004081986A2 Method to planarize and reduce defect density of silicon germanium
09/23/2004	WO2004081265A1 Method for forming oxide coating film, oxide coating film and coating film structure
09/23/2004	US20040185666 Single crystalline aluminum nitride film, method of forming the same, base substrate for group III element nitride film, light emitting device and surface acoustic wave device
09/23/2004	US20040185665 Fabrication method of semiconductor wafer
09/23/2004	US20040183090 Method of manufacturing group III nitride substrate and semiconductor device
09/23/2004	US20040183073 Large grain size polysilicon films formed by nuclei-induced solid phase crystallization
09/23/2004	US20040182310 CVD device with substrate holder with differential temperature control
09/23/2004	US20040182308 Thick single crystal diamond layer method for making it and gemstones produced from the layer
09/22/2004	EP1460679A1 Susceptor, gaseous phase growing device, device and method for manufacturing epitaxial wafer, and epitaxial wafer
09/22/2004	EP1460154A1 Group iii nitride semiconductor substrate and its manufacturing method
09/22/2004	EP1459364A2 Method of producing integrated semiconductor components on a semiconductor substrate
09/22/2004	EP1459362A2 Method for depositing iii-v semiconductor layers on a non-iii-v substrate
09/22/2004	CN1531033A Method for forming strong dielectric membrane
09/22/2004	CN1531022A Producing method for compound semiconductor layer and luminescent device, gas phase producing apparatus
09/22/2004	CN1168118C Film forming apparatus and method of forming crystalline silicon film
09/22/2004	CN1167826C Method for uniform heat-field array method for growing diamond film tubes
09/21/2004	US6794276 Methods for fabricating a substrate
09/21/2004	US6794210 Method for growing GaN compound semiconductor crystal and semiconductor substrate
09/21/2004	US6794204 Semiconductor manufacturing method and semiconductor manufacturing apparatus
09/21/2004	US6793849 N-type droping of nanocrystalline diamond films with nitrogen and electrodes made therefrom
09/21/2004	US6793734 Heating furnace and semiconductor wafer-holding jig assembly and process of manufacturing semiconductor devices
09/16/2004	WO2004079803A1 Nitride semiconductor device and method for manufacturing same
09/16/2004	WO2004079043A2 Susceptor apparatus for inverted type mocvd reactor
09/16/2004	US20040180205 Boron doped diamond
09/16/2004	US20040178176 Apparatus and method for cleaning a bell jar in a barrel epitaxial reactor

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