C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth

Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
11/2004
11/30/2004	US6824611 Method and apparatus for growing silicon carbide crystals
11/30/2004	US6824610 Process for producing gallium nitride crystal substrate, and gallium nitride crystal substrate
11/25/2004	WO2004102648A2 Reactor surface passivation through chemical deactivation
11/25/2004	WO2004102619A2 Chemical vapor deposition epitaxial growth
11/25/2004	WO2004101867A1 Silicon epitaxial wafer, and silicon epitaxial wafer producing method
11/25/2004	US20040235302 Method of atomic layer deposition on plural semiconductor substrates simultaneously
11/25/2004	US20040235274 Manufacturing method for a silicon substrate having strained layer
11/25/2004	US20040235268 Fabrication of substrates with a useful layer of monocrystalline semiconductor material
11/25/2004	US20040234823 Zinc oxide crystal growth substrate
11/25/2004	US20040232525 Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
11/25/2004	US20040232427 P-type group II-VI semiconductor compounds
11/25/2004	US20040232404 Boron phosphide-based semiconductor device and production method thereof
11/25/2004	US20040231599 Process chamber with a base with sectionally different rotational drive and layer deposition method in such a process chamber
11/25/2004	US20040231583 Manufacturing method for producing silicon carbide crystal using source gases
11/25/2004	DE10319972A1 Production of group II oxide layers and group II oxide components comprises using epitaxial gas phase deposition by depositing zinc oxide layer with organometallic zinc precursor and oxygen precursors
11/24/2004	EP1480260A1 Crystal manufacturing method
11/24/2004	EP1479795A1 Process for producing group iii nitride compound semiconductor
11/24/2004	EP1479056A1 Device for depositing thin layers with a wireless detection of process parameters
11/24/2004	EP1392894B1 Molecular beam epitaxy equipment
11/24/2004	CN1550030A Elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
11/23/2004	US6821889 Atomic layer deposition using a boron compound as a reducing agent.
11/23/2004	US6821825 Process for deposition of semiconductor films
11/23/2004	US6821806 Method for forming compound semiconductor layer and compound semiconductor apparatus
11/23/2004	US6821805 Semiconductor device, semiconductor substrate, and manufacture method
11/23/2004	US6821655 For a transparent electrode in a solar battery, display device such as liquid crystal display and the like
11/23/2004	US6821563 Gas distribution system for cyclical layer deposition
11/23/2004	US6821342 Method for forming suspended microstructures
11/23/2004	US6821341 Precursor for use in preparing layers on substrates
11/23/2004	US6821340 Method of manufacturing silicon carbide, silicon carbide, composite material, and semiconductor element
11/23/2004	US6821338 Particle beam biaxial orientation of a substrate for epitaxial crystal growth
11/23/2004	CA2217822C Structures having enhanced biaxial texture and method of fabricating same
11/18/2004	WO2004100238A1 Monocrystalline diamond layer and method for the production thereof
11/18/2004	WO2004099473A1 Semiconductor substrate, semiconductor device, light emitting diode and producing method therefor
11/18/2004	WO2004099472A1 Iii-v compound semiconductor crystal and method for production thereof
11/18/2004	WO2004099471A2 Method of forming a layer of silicon carbide on a silicon wafer
11/18/2004	WO2004090201A3 Method for the production of monocrystalline crystals
11/18/2004	WO2004073045A3 Epitaxial growth of a zirconium diboride layer on silicon substrates
11/18/2004	US20040229464 Optical quality diamond material
11/18/2004	US20040227152 Vapor-phase growth method for a nitride semiconductor and a nitride semiconductor device
11/17/2004	EP1476898A1 Method for production of a layer of silicon carbide or a nitride of a group iii element on a suitable substrate
11/17/2004	EP1476591A2 A susceptor provided with indentations and an epitaxial reactor which uses the same
11/17/2004	CN1547757A System and method of fast ambient switching for rapid thermal processing
11/17/2004	CN1546743A Single slice three chambers type infrared heating superhigh vacuum CVD epitaxial system
11/17/2004	CN1546742A Method of preparing ZnO crystal whisker adopting atmosphere open type MOCVD and apparatus therefor
11/17/2004	CN1546741A Method of preparing one-dimensional array material adopting atmosphere open type MOCVD and apparatus therefor
11/17/2004	CN1546740A Method of depositing big grain polycrystalline silicon thin film on ceramic substrate
11/17/2004	CN1176502C Manufacturing method of single-crystal GaN base and single-crystal GaN base
11/17/2004	CN1176014C Process for directly synthesizing ultra-long single-wall continuous nano carbon tube
11/16/2004	US6818926 Method for manufacturing gallium nitride compound semiconductor
11/16/2004	US6818533 Epitaxial plasma enhanced chemical vapor deposition (PECVD) method providing epitaxial layer with attenuated defects
11/16/2004	US6818463 Vapor-phase growth method for a nitride semiconductor and a nitride semiconductor device
11/16/2004	US6818067 Processing chamber for atomic layer deposition processes
11/16/2004	US6818061 Method for growing single crystal GaN on silicon
11/16/2004	CA2326228C Temperature regulator for a substrate in vapour deposition processes
11/11/2004	WO2004053205A3 Porous material formation by chemical vapor deposition onto colloidal crystal templates
11/11/2004	US20040224484 Methods of growing nitride-based film using varying pulses
11/11/2004	US20040222501 Chemical vapor deposition epitaxial growth
11/11/2004	US20040221807 Reactor surface passivation through chemical deactivation
11/11/2004	US20040221798 Atomic layer deposition using multilayers
11/11/2004	US20040221795 Single crystal diamond prepared by CVD
11/10/2004	EP1474824A2 Group iii nitride semiconductor crystal, production method thereof and group iii nitride semiconductor epitaxial wafer
11/10/2004	EP1373130A4 Process and apparatus for the production of carbon nanotubes
11/10/2004	CN1175473C GaN signale crystalline substrate and method of producing the same
11/09/2004	US6815365 Plasma etching apparatus and plasma etching method
11/09/2004	US6815241 GaN structures having low dislocation density and methods of manufacture
11/09/2004	US6814811 Semiconductor wafer and vapor phase growth apparatus
11/04/2004	WO2004081986A3 Method to planarize and reduce defect density of silicon germanium
11/04/2004	US20040219767 SiGe rectification process
11/04/2004	US20040219735 Epitaxial semiconductor deposition methods and structures
11/04/2004	US20040219703 Method of making a long wavelength indium gallium arsenide nitride (InGaAsN) active region
11/04/2004	US20040216660 Method of forming high-quality quantum dots by using a strained layer
11/03/2004	CN1542992A GaN single crystal substrate and method of making the same
11/03/2004	CN1542172A Vacuum system for the growth of semiconductor substrate crystalline material
11/03/2004	CN1542171A Metal organic compound vapor deposition device for the growth of zinc oxide semiconductor film
11/03/2004	CN1174126C Prodn. of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride: silicon carbide alloy
11/02/2004	US6812051 Method of forming an epitaxially grown nitride-based compound semiconductor crystal substrate structure and the same substrate structure
11/02/2004	US6811614 CVD reactor with substrate holder which is rotatably driven and mounted by a gas stream
11/02/2004	US6811611 Esrf source for ion plating epitaxial deposition
11/02/2004	US6810897 Switching between gases without accompanying particulate contamination of the treatment substrate caused by repeated operation of a valve
11/02/2004	US6810575 Functional element for electric, electronic or optical device and method for manufacturing the same
10/2004
10/28/2004	WO2004093173A1 Susceptor and vapor growth device
10/28/2004	WO2004092453A2 METHOD FOR GROWING SINGLE CRYSTAL GaN ON SILICON
10/28/2004	US20040214437 Atomic layer deposition
10/28/2004	US20040214407 Semiconductor structures with structural homogeneity
10/28/2004	US20040213721 Prevents formation of oxyfluoride (OF2); controls greenhouse gas pollution; for abating undesired component(s) from a gas stream containing same, such as halocompounds, acid gases, silanes, ammonia, etc., by scrubbing of the effluent gas stream with an aqueous scrubbing medium
10/28/2004	US20040211365 Chemical vapor phase epitaxial device
10/28/2004	US20040211364 Gas port sealing for CVD/CVI furnace hearth plates
10/28/2004	US20040211355 Oxygen-doped n-type gallium nitride freestanding single crystal substrate
10/27/2004	EP1471168A1 Device and method for producing single crystals by vapour deposition
10/27/2004	EP1470592A2 Boron phosphide-based semiconductor device and production method thereof
10/27/2004	CN1541287A High surface quality GaN wafer and method of fabricating same
10/27/2004	CN1173079C Epitaxial growing method for aluminium nitride and growing chamber therefor
10/26/2004	US6809351 Group III-V compound semiconductor crystal structure and method of epitaxial growth of the same as well as semiconductor device including the same
10/26/2004	US6808803 Molecular epitaxy method and compositions
10/26/2004	US6808564 In-situ post epitaxial treatment process
10/21/2004	WO2004090201A2 Method for the production of monocrystalline crystals
10/21/2004	WO2004048258A3 Method for forming carbon nanotubes
10/21/2004	US20040209465 Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
10/21/2004	US20040209446 Methods of forming semiconductive materials having flattened surfaces; methods of forming isolation regions; and methods of forming elevated source/drain regions
10/21/2004	US20040209402 Method for making Group III nitride devices and devices produced thereby

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