| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 01/06/2005 | US20050000449 Susceptor for epitaxial growth and epitaxial growth method |
| 01/06/2005 | US20050000441 Process and device for depositing in particular crystalline layers on in particular crystalline substrates |
| 01/06/2005 | US20050000431 Method of modifying source chemicals in an ALD process |
| 01/06/2005 | US20050000406 Device and method for producing single crystals by vapor deposition |
| 01/05/2005 | EP1494269A1 VAPOR PHASE GROWTH METHOD FOR Al-CONTAINING III-V GROUP COMPOUND SEMICONDUCTOR, AND METHOD AND DEVICE FOR PRODUCING Al-CONTAINING III-V GROUP COMPOUND SEMICONDUCTOR |
| 01/05/2005 | EP1493848A1 Seed crystal of silicon carbide single crystal and method for producing ingot using same |
| 01/05/2005 | EP1493175A1 Gas driven planetary rotation apparatus and methods for forming silicon carbide layers |
| 01/05/2005 | CN1560330A Preparation process of zinc oxide bar shape single crystal nano-probe |
| 01/05/2005 | CN1183578C Semiconductor making method and semiconductor making apparatus |
| 01/04/2005 | US6838395 Method for fabricating a semiconductor crystal |
| 01/04/2005 | US6838308 Semiconductor polysilicon component and method of manufacture thereof |
| 01/04/2005 | US6837944 Cleaning and drying method and apparatus |
| 01/04/2005 | US6837940 Film-forming device with a substrate rotating mechanism |
| 01/04/2005 | US6837935 Microwave plasma film-forming apparatus for forming diamond film |
| 01/04/2005 | US6837928 Electric field orientation of carbon nanotubes |
| 12/30/2004 | US20040266181 Coated semiconductor wafer, and process and device for producing the semiconductor wafer |
| 12/30/2004 | US20040266157 Process for producing semiconductor layers based on III-V nitride semiconductors |
| 12/30/2004 | US20040266144 Method of producing integrated semiconductor components on a semiconductor substrate |
| 12/30/2004 | US20040266057 Silicon carbide and method of manufacturing the same |
| 12/30/2004 | US20040264248 Crystal growth method of nitride semiconductor |
| 12/30/2004 | US20040262636 Fluidic nanotubes and devices |
| 12/30/2004 | US20040262624 GaN substrate and method of fabricating the same, nitride semiconductor device and method of fabricating the same |
| 12/30/2004 | US20040261706 Method of growing a thin film onto a substrate |
| 12/30/2004 | US20040261693 Epitaxial structure and process of GaN based compound semiconductor |
| 12/30/2004 | US20040261689 Low temperature epitaxial growth of quartenary wide bandgap semiconductors |
| 12/29/2004 | WO2004073024A3 Method and apparatus for making continuous films ofa single crystal material |
| 12/29/2004 | EP1492158A2 GaN substrate and method of fabricating the same, nitride semiconductor device and method of fabricating the same |
| 12/29/2004 | EP1491662A1 METHOD FOR PREPARING SiC CRYSTAL AND SiC CRYSTAL |
| 12/29/2004 | EP1491255A1 Method for carrying out homogeneous and heterogeneous chemical reactions using plasma |
| 12/29/2004 | CN2666931Y Apparatus for growing metal organic compound vapour phase deposit of zinc oxide crystal film |
| 12/29/2004 | CN1559079A Heating system and method of reactor for heating atmosphere |
| 12/29/2004 | CN1558001A Substrate holder |
| 12/28/2004 | US6835966 Method for manufacturing gallium nitride compound semiconductor |
| 12/28/2004 | US6835674 Methods for treating pluralities of discrete semiconductor substrates |
| 12/28/2004 | US6835613 Method of producing an integrated circuit with a carbon nanotube |
| 12/28/2004 | US6835416 Apparatus for growing thin films |
| 12/28/2004 | US6835414 Low energy plasma discharges; generation high frequency electromagnetic radiation in container |
| 12/28/2004 | US6835246 Nanostructures for hetero-expitaxial growth on silicon substrates |
| 12/23/2004 | WO2004112126A1 A method of preparation of an epitaxial substrate |
| 12/23/2004 | WO2004112112A1 Iii nitride crystal and method for producing same |
| 12/23/2004 | WO2004112109A1 Defect-free semiconductor templates for epitaxial growth and method of making same |
| 12/23/2004 | WO2004111319A2 Sacrificial template method of fabricating a nanotube |
| 12/23/2004 | WO2004111316A1 System for growing silicon carbide crystals |
| 12/23/2004 | WO2003097532A8 Process for manufacturing a gallium rich gallium nitride film |
| 12/23/2004 | US20040259333 Method to planarize and reduce defect density of silicon germanium |
| 12/23/2004 | US20040259275 Method of forming ferroelectric film |
| 12/23/2004 | US20040255846 Method for fabricating a carrier substrate |
| 12/23/2004 | US20040255843 Susceptor gaseous phase growing device, device and method for manufacturing epitaxial wafer, and epitaxial wafer |
| 12/23/2004 | CA2509257A1 Sacrificial template method of fabricating a nanotube |
| 12/22/2004 | EP1412552B1 Method for the production of coated substrates |
| 12/22/2004 | EP1226285B1 Single crystal tungsten alloy penetrator and method of making |
| 12/22/2004 | CN1556910A System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy |
| 12/22/2004 | CN1181220C Method for producing coated workpieces, uses and installation for the method |
| 12/21/2004 | US6833558 Parallel and selective growth method of carbon nanotube on the substrates for electronic-spintronic device applications |
| 12/21/2004 | US6833027 Method of manufacturing high voltage schottky diamond diodes with low boron doping |
| 12/16/2004 | WO2004108593A1 Nano-fiber or nano-tube comprising v group transition metal dichalcogenide crystals, and method for preparation thereof |
| 12/16/2004 | US20040253796 Method for manufacturing gallium nitride (GaN) based single crystalline substrate |
| 12/16/2004 | US20040250774 Wafer heater with protected heater element |
| 12/16/2004 | US20040250773 Semiconductor film formation device |
| 12/16/2004 | US20040250764 Method and apparatus for production of high purity silicon |
| 12/16/2004 | US20040250753 Method for forming carbon nanotubes with post-treatment step |
| 12/16/2004 | US20040250752 Heteroatomic single-crystal layers |
| 12/15/2004 | EP1330846A4 Electrode and electron emission applications for n-type doped nanocrystalline materials |
| 12/15/2004 | EP1230448A4 Patterned carbon nanotubes |
| 12/15/2004 | EP1218572B1 Method and apparatus for growing silicon carbide crystals |
| 12/15/2004 | EP1105549A4 High throughput organometallic vapor phase epitaxy (omvpe) apparatus |
| 12/15/2004 | EP0988407B9 Method for producing coated workpieces, which are coated with an epitactic layer |
| 12/15/2004 | CN1180483C Si Ge C semiconductor crystal and production method thereof |
| 12/15/2004 | CN1180135C Method for preparing gallium nitride crystal |
| 12/14/2004 | US6830618 Manufacturing method for producing silicon carbide crystal using source gases and apparatus for the same |
| 12/09/2004 | WO2004106596A1 Single crystal of silicon carbide, and method and apparatus for producing the same |
| 12/09/2004 | WO2004084275A3 Method for making group iii nitride devices and devices produced thereby |
| 12/09/2004 | US20040249006 Porous material formation by chemical vapor deposition onto colloidal crystal templates |
| 12/09/2004 | US20040248743 Method of producing biaxially textured buffer layers and related articles, devices and systems |
| 12/09/2004 | US20040247947 comprises sapphire single crystal substrate and contoured/flat underfilm; usable for semiconductor films constituting light-emitting diode or high velocity integrated circuit chip |
| 12/08/2004 | EP1484794A1 A method for fabricating a carrier substrate |
| 12/08/2004 | EP1483786A1 Method and resulting structure for manufacturing semiconductor substrate |
| 12/08/2004 | EP1483782A1 Production method of sic monitor wafer |
| 12/08/2004 | CN1553523A Semiconductor device and semiconductor substrate |
| 12/07/2004 | US6829270 Nitride III-V compound semiconductor substrate, its manufacturing method, manufacturing method of a semiconductor light emitting device, and manufacturing method of a semiconductor device |
| 12/07/2004 | US6828182 Epitaxial thin film forming method |
| 12/07/2004 | CA2311132C Gan single crystalline substrate and method of producing the same |
| 12/07/2004 | CA2139551C Process for crystal growth of iii-v group compound semiconductor |
| 12/02/2004 | WO2004105108A2 Manufacturing gallium nitride substrates by lateral overgrowth through masks and devices fabricated thereof |
| 12/02/2004 | WO2004105098A2 P-type group ii-vi semiconductor compounds |
| 12/02/2004 | WO2004104275A1 Electromagnetic rotation of platter |
| 12/02/2004 | WO2004104274A2 Zinc oxide crystal growth substrate |
| 12/02/2004 | WO2004082003A3 Apparatuses and methods for forming a substantially facet-free epitaxial film |
| 12/02/2004 | WO2004019391A3 Semiconductor heterostructures having reduced dislocation pile-ups and related methods |
| 12/02/2004 | US20040241992 Silicon monocrystal wafer processing device, and method of manufacturing silicon monocrystal wafer and silicon epitaxial wafer |
| 12/02/2004 | US20040241975 Method of fabricating heteroepitaxial microstructures |
| 12/02/2004 | US20040241966 Semiconductor crystal producing method |
| 12/02/2004 | US20040237881 Methods for epitaxial silicon growth |
| 12/02/2004 | DE10321305A1 Production of highly conducting tear-free gallium nitride-based buffer layers used in production of illuminating diodes comprises using a group III nitride buffer layer with a silicon nitride layer, and doping with a donator |
| 12/02/2004 | DE10320133A1 Einkristalline Diamantschicht und Verfahren zu ihrer Herstellung Single-crystalline diamond layer and methods for their preparation |
| 12/01/2004 | EP1482549A1 Microstructure and its method of fabrication |
| 12/01/2004 | EP1481117A1 Method and device for depositing semi-conductor layers |
| 12/01/2004 | CN1551932A Susceptor with epitaxial growth control devices and epitaxial reactor using the same |
| 12/01/2004 | CN1551824A Free-standing (Al, Ga, In)N and parting method for forming same |
| 11/30/2004 | US6824753 Aerosolizing organoboron precursor; introducing carrier gas into chamber to forming a combined gas stream; sweeping into heated furnace; injecting nitriding agent to form powder of boron-nitrogen-oxygen-carbon-hydrogen; collecting |