| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 02/10/2005 | US20050031890 Electrically conductive wire with curable coating including reactive particles based on element-oxygen network and binder which reacts with particle; cures to inorganic-organic-oxygen network with high partial discharge resistance |
| 02/10/2005 | US20050029507 Epitaxially grown nitride-based compound semiconductor crystal substrate structure |
| 02/10/2005 | US20050028888 Interface containing Group 3 nitride; stress relieving |
| 02/10/2005 | US20050028728 Method for fabricating a diamond film having low surface roughness |
| 02/10/2005 | US20050028726 Method to manufacture Indium Nitride quantum dots |
| 02/09/2005 | CN1577744A Coated semiconductor wafer, and process and device for producing the semiconductor wafer |
| 02/09/2005 | CN1577743A Gan substrate and method of fabricating the same, nitride semiconductor device and method of fabricating the same |
| 02/08/2005 | US6852635 Method for bottomless deposition of barrier layers in integrated circuit metallization schemes |
| 02/08/2005 | US6852593 Haze-free BST films |
| 02/08/2005 | US6852253 Thickness of substrate subject to growth made larger than or equal to 200 mu m and curvature thereof made smaller than or equal to 0.03 cm-1, curvature caused by difference in thermal expansion coefficients of the base and substrate |
| 02/08/2005 | US6852161 Method of fabricating group-iii nitride semiconductor crystal, method of fabricating gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor light-emitting device, and light source using the semiconductor light-emitting device |
| 02/03/2005 | WO2005010965A2 METHOD AND STRUCTURE OF STRAIN CONTROL OF SiGe BASED PHOTODETECTORS AND MODULATORS |
| 02/03/2005 | WO2005010964A2 Silicon crystallization using self-assembled monolayers |
| 02/03/2005 | WO2005010231A2 Cvd method for the deposition of at least one iii-vn layer on a substrate |
| 02/03/2005 | WO2005010227A2 Chemical vapor deposition reactor |
| 02/03/2005 | US20050026402 Method and device for depositing crystalline layers on crystalline substrates |
| 02/03/2005 | US20050026398 Method of making group III nitride-based compound semiconductor |
| 02/03/2005 | US20050026394 Methods for fabricating a substrate |
| 02/03/2005 | US20050026392 Method for depositing III-V semiconductor layers on a non-III-V substrate |
| 02/03/2005 | US20050025886 Annealing single crystal chemical vapor depositon diamonds |
| 02/03/2005 | US20050023544 Heteroepitaxially growing on heterosubstrate; reliability, high yield; single crystals; flatness, smoothness |
| 02/03/2005 | US20050022738 Precursor mixtures for use in preparing layers on substrates |
| 02/03/2005 | US20050022725 Process for depositing III-V semiconductor layers on a non-III-V substrate |
| 02/03/2005 | CA2532638A1 Silicon crystallization using self-assembled monolayers |
| 02/02/2005 | EP1502303A1 High voltage switching devices and process for forming same |
| 02/02/2005 | EP1501757A2 Method of altering the properties of a thin film and substrate implementing said method |
| 02/01/2005 | US6849862 III-V compound semiconductor device with an AlxByInzGa1-x-y-zN1-a-bPaAsb non-continuous quantum dot layer |
| 02/01/2005 | US6849580 Method of producing biaxially textured buffer layers and related articles, devices and systems |
| 02/01/2005 | US6849561 Method of forming low-k films |
| 02/01/2005 | US6849131 Truncated dummy plate for process furnace |
| 02/01/2005 | US6849122 Thin layer metal chemical vapor deposition |
| 01/27/2005 | WO2005007937A2 Annealing single crystal chemical vapor deposition diamonds |
| 01/27/2005 | WO2005007936A2 Ultrahard diamonds and method of making thereof |
| 01/27/2005 | WO2005007935A2 Tough diamonds and method of making thereof |
| 01/27/2005 | WO2004092453A3 METHOD FOR GROWING SINGLE CRYSTAL GaN ON SILICON |
| 01/27/2005 | WO2004083485A3 Methods and apparatus for atomic layer deposition |
| 01/27/2005 | US20050020036 Method of fabricating a compound semiconductor layer |
| 01/27/2005 | US20050020035 Method of forming a p-type group II-VI semiconductor crystal layer on a substrate |
| 01/27/2005 | US20050016956 Methods and apparatus for cycle time improvements for atomic layer deposition |
| 01/27/2005 | US20050016470 Susceptor and deposition apparatus including the same |
| 01/27/2005 | CA2532384A1 Annealing single crystal chemical vapor deposition diamonds |
| 01/27/2005 | CA2532227A1 Tough diamonds and method of making thereof |
| 01/26/2005 | EP1501118A1 Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method |
| 01/26/2005 | EP1501117A1 Substrate for growing gallium nitride, method for preparing substrate for growing gallium nitride and method for preparing gallium nitride substrate |
| 01/26/2005 | CN1570225A Device and method for producing single crystals by vapor deposition |
| 01/25/2005 | US6847015 Heat treatment apparatus and controller for heat treatment apparatus and control method for heat treatment apparatus |
| 01/25/2005 | US6846754 Boron phosphide-based semiconductor layer and vapor phase growth method thereof |
| 01/25/2005 | US6846514 Vapor deposition; positioning fluid flow nozzle; reducing leakage; sealing gas intake ports |
| 01/25/2005 | US6846424 Plasma-assisted dry etching of noble metal-based materials |
| 01/25/2005 | US6846359 Epitaxial CoSi2 on MOS devices |
| 01/25/2005 | US6845734 Deposition apparatuses configured for utilizing phased microwave radiation |
| 01/20/2005 | WO2005006420A1 Nitride semiconductor element and method for manufacturing thereof |
| 01/20/2005 | WO2004099471A3 Method of forming a layer of silicon carbide on a silicon wafer |
| 01/20/2005 | WO2004079043A3 Susceptor apparatus for inverted type mocvd reactor |
| 01/20/2005 | US20050012099 Fabrication of crystalline materials over substrates |
| 01/20/2005 | US20050011459 Chemical vapor deposition reactor |
| 01/20/2005 | US20050011436 Chemical vapor deposition reactor |
| 01/20/2005 | US20050011435 Method for depositing in particular crystalline layers |
| 01/20/2005 | US20050011434 Silicon crystallization using self-assembled monolayers |
| 01/20/2005 | US20050011433 Tough diamonds and method of making thereof |
| 01/20/2005 | DE10328842A1 Beschichtete Halbleiterscheibe und Verfahren und Vorrichtung zur Herstellung der Halbleiterscheibe Coated wafer and method and apparatus for producing the semiconductor wafer |
| 01/19/2005 | EP1498938A1 Method of forming silicon epitaxial layer |
| 01/19/2005 | EP1497226A2 Method for producing nitrides |
| 01/19/2005 | CN1568379A Methods for the production of components and ultra high vacuum cvd reactor |
| 01/18/2005 | US6844611 III nitride epitaxial substrate, epitaxial substrate for III nitride element, and III nitride element that includes a surface nitride layer formed on the main surface of a sapphire single crystal |
| 01/18/2005 | US6844572 Light emitting semiconductor device and method of fabricating the same |
| 01/18/2005 | US6844528 Hot wall rapid thermal processor |
| 01/18/2005 | US6844074 Quartz layer; vibrators, oscillators, high frequency filter surface acoustic wave elements, optical waveguides, semicon-ductors; atmospheric pressure vapor phase epitaxial deposited silicate on gallium nitride or zinc oxide buffered substrate |
| 01/13/2005 | WO2005004215A1 Substrate processing system |
| 01/13/2005 | WO2005004213A1 Method for growing thin nitride film onto substrate and thin nitride film device |
| 01/13/2005 | WO2005004212A1 Growth method of nitride semiconductor epitaxial layers |
| 01/13/2005 | WO2005004197A2 Fluidic nanotubes and devices |
| 01/13/2005 | WO2005003414A1 Substrate for thin-film formation, thin-film substrate and light emitting element |
| 01/13/2005 | WO2005003406A2 Apparatus and method for chemical source vapor pressure control |
| 01/13/2005 | WO2004105108A3 Manufacturing gallium nitride substrates by lateral overgrowth through masks and devices fabricated thereof |
| 01/13/2005 | US20050009335 Apparatuses for treating pluralities of discrete semiconductor substrates; and methods for treating pluralities of discrete semiconductor substrates |
| 01/13/2005 | US20050009221 Method for manufacturing nitride film including high-resistivity GaN layer and epitaxial substrate manufactured by the method |
| 01/13/2005 | US20050008799 Solid organometallic compound-filled container and filling method thereof |
| 01/13/2005 | US20050006635 Semiconductor apparatus, method for growing nitride semiconductor and method for producing semiconductor apparatus |
| 01/13/2005 | US20050005858 Susceptor with epitaxial growth control devices and epitaxial reactor using the same |
| 01/13/2005 | DE10325549A1 Production of relaxed semiconductor layer on semiconductor substrate used in production of high frequency circuits comprises roughening surface of substrate by dry etching, and forming semiconductor layer on surface |
| 01/13/2005 | CA2522222A1 Fluidic nanotubes and devices |
| 01/12/2005 | EP1495169A1 Dislocation reduction in non-polar gallium nitride thin films |
| 01/12/2005 | EP1495168A1 Non-polar a-plane gallium nitride thin films grown by metalorganic chemical vapor deposition |
| 01/12/2005 | EP1495167A1 NON-POLAR (A1,B,In,Ga) QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES |
| 01/12/2005 | EP1495156A2 Deposition methods utilizing phased array microwave excitation, and deposition apparatuses |
| 01/12/2005 | EP1097251A4 System and method for reducing particles in epitaxial reactors |
| 01/12/2005 | CN1564314A Method of preparing high quality zinc oxide based monocrystal thin film |
| 01/11/2005 | US6841274 GaN single-crystal substrate, nitride type semiconductor epitaxial substrate, nitride type semiconductor device, and methods of making the same |
| 01/11/2005 | US6841142 Heating a transition metal material in the presence of water vapor in a vacuum apparatus or electron beam evaporating to obtain nanoparticles of the transition metal oxide as long as 0.3 microns |
| 01/11/2005 | US6841006 Mutlistage pressurized vapor deposition; for semiconductors |
| 01/11/2005 | US6841003 Method for forming carbon nanotubes with intermediate purification steps |
| 01/11/2005 | US6841002 Method for forming carbon nanotubes with post-treatment step |
| 01/06/2005 | WO2005001916A1 Method for producing silicon epitaxial wafer and silicon epitaxial wafer |
| 01/06/2005 | WO2005001907A1 THE METHOD OF PREPARING COMPOSITE SUBSTRATE MATERIALS OF Ϝ-LiAlO2 /α-Al2O3 |
| 01/06/2005 | WO2005001168A1 Method of synthesising a crystalline material and material thus obtained |
| 01/06/2005 | WO2003107404A8 Vapor phase epitaxial apparatus and vapor phase epitaxial method |
| 01/06/2005 | US20050003641 Method for fabricating an epitaxial substrate |
| 01/06/2005 | US20050001245 Method for manufacturing gallium nitride group compound semiconductor |
| 01/06/2005 | US20050000452 Electromagnetic rotation of platter |