| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
|---|
| 03/22/2005 | US6869641 Atomic layer deposition (ALD)/epitaxy |
| 03/22/2005 | US6869481 Method and device for regulating the differential pressure in epitaxy reactors |
| 03/17/2005 | WO2005003406A3 Apparatus and method for chemical source vapor pressure control |
| 03/17/2005 | US20050059241 Method and system for controlling the presence of fluorine in refractory metal layers |
| 03/17/2005 | US20050056222 Reactor for extended duration growth of gallium containing single crystals |
| 03/17/2005 | US20050056216 Precursor delivery system |
| 03/17/2005 | US20050056211 Method of growing a thin film onto a substrate |
| 03/17/2005 | US20050056209 Method of creating a synthetic diamond |
| 03/17/2005 | US20050056208 Synthetic diamond having alternating layers with different concentrations of impurities |
| 03/17/2005 | US20050056207 Single crystal diamond tool |
| 03/17/2005 | US20050056206 Single crystal diamond having 12C, 13C, and phosphorous |
| 03/17/2005 | US20050056204 Rare earth silicate single crystal and process for production of rare earth silicate single crystals |
| 03/17/2005 | DE10337568A1 Gasversorgungsanordnung, insbesondere für einen CVD-Prozessreaktor zum Aufwachsen einer Epitaxieschicht Gas supply arrangement, especially for a CVD reactor process for growing an epitaxial layer |
| 03/16/2005 | EP1513767A1 Plasma synthesis of hollow nanostructures |
| 03/16/2005 | EP1017876B1 Gas injection system for plasma processing apparatus |
| 03/16/2005 | CN2685356Y Sapphire substrate for gallium nitrid epitaxial growth |
| 03/16/2005 | CN1596325A Apparatus for inverted CVD |
| 03/16/2005 | CN1193108C Metal strip for epitaxial coatings and method for the production thereof |
| 03/15/2005 | US6867459 Isotopically pure silicon-on-insulator wafers and method of making same |
| 03/15/2005 | US6866801 Process for making aligned carbon nanotubes |
| 03/15/2005 | CA2338314C Semiconductor thin film and thin film device |
| 03/10/2005 | WO2005022655A1 Algainn based optical device and fabrication method thereof |
| 03/10/2005 | WO2005022590A2 Method of producing biaxially textured buffer layers and related articles, devices and systems |
| 03/10/2005 | WO2005021842A2 High-purity crystal growth |
| 03/10/2005 | WO2005010231A3 Cvd method for the deposition of at least one iii-vn layer on a substrate |
| 03/10/2005 | WO2004057631A3 Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy |
| 03/10/2005 | US20050051795 Epitaxial growth of relaxed silicon germanium layers |
| 03/10/2005 | US20050051099 Susceptor provided with indentations and an epitaxial reactor which uses the same |
| 03/10/2005 | US20050051097 Covering assembly for crucible used for evaporation of raw materials |
| 03/10/2005 | CA2528949A1 Method of producing biaxially textured buffer layers and related articles, devices and systems |
| 03/09/2005 | EP1218573B1 Method and device for depositing materials with a large electronic energy gap and high binding energy |
| 03/09/2005 | CN1592949A High resistivity silicon carbide single crystal and mfg. method |
| 03/09/2005 | CN1591926A Doped organic semiconductor materials and process for their preparation |
| 03/09/2005 | CN1590583A Solid organometallic compound-filled container and filling method thereof |
| 03/08/2005 | US6864159 Method for fabricating III-V compound semiconductor |
| 03/08/2005 | US6864158 Method of manufacturing nitride semiconductor substrate |
| 03/08/2005 | US6864115 Low threading dislocation density relaxed mismatched epilayers without high temperature growth |
| 03/08/2005 | US6863942 Free-standing and aligned carbon nanotubes and synthesis thereof |
| 03/08/2005 | US6863735 Epitaxial growth furnace |
| 03/08/2005 | US6863727 Method of depositing transition metal nitride thin films |
| 03/03/2005 | WO2005019496A1 Alkyl push flow for vertical flow rotating disk reactors |
| 03/03/2005 | WO2005019491A2 Thermal cvd synthesis of nanostructures |
| 03/03/2005 | WO2005019104A2 Controlled nanotube fabrication and uses |
| 03/03/2005 | WO2004068556A3 Semiconductor structures with structural homogeneity |
| 03/03/2005 | US20050048792 Atomic layer deposition apparatus |
| 03/03/2005 | US20050048745 Deposition over mixed substrates |
| 03/03/2005 | US20050048685 III-V nitride semiconductor substrate and its production method |
| 03/03/2005 | US20050045092 Method of multi-element compound deposition by atomic layer deposition for IC barrier layer applications |
| 03/03/2005 | DE4319233B4 Epitaxialwafer aus Galliumaresenidphosphid Epitaxial wafer from Galliumaresenidphosphid |
| 03/02/2005 | EP1509949A2 Formation of lattice-tuning semiconductor substrates |
| 03/02/2005 | EP1509455A1 Chemical mix and delivery systems and methods thereof |
| 03/02/2005 | EP1224691B1 Device and method for handling substrates by means of a self-levelling vacuum system in epitaxial induction reactors |
| 03/02/2005 | CN1588624A Method for improving hydride gas phase epitaxial growth gallium nitride crystal film surface quanlity |
| 03/01/2005 | US6861729 Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate |
| 03/01/2005 | US6860943 Method for producing group III nitride compound semiconductor |
| 03/01/2005 | US6860937 Method for preparing zinc oxide semi-conductor material |
| 03/01/2005 | US6860138 Real-time detection mechanism with self-calibrated steps for the hardware baseline to detect the malfunction of liquid vaporization system in AMAT TEOS-based Dxz chamber |
| 03/01/2005 | CA2271369C Phototonic device with strain-induced three dimensional growth morphology |
| 02/24/2005 | WO2005017986A1 Silicon carbide epitaxial wafer, method for producing such wafer, and semiconductor device formed on such wafer |
| 02/24/2005 | WO2005017985A1 Gas-supply assembly, in particular for a cvd process reactor for growing an epitaxial layer |
| 02/24/2005 | WO2005017938A2 Method and apparatus for bi-planar backward wave oscillator |
| 02/24/2005 | US20050042883 Method of forming low-k films |
| 02/24/2005 | US20050042800 Production method of sic monitor wafer |
| 02/24/2005 | US20050042789 Method for producing nitride semiconductor, semiconductor wafer and semiconductor device |
| 02/24/2005 | US20050042465 Thermal CVD synthesis of nanostructures |
| 02/24/2005 | US20050042369 Catalyst for carbon nanotube growth |
| 02/24/2005 | US20050041365 Haze-free bst films |
| 02/24/2005 | US20050040385 Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices |
| 02/24/2005 | US20050039683 Plasma processing method |
| 02/24/2005 | US20050039674 Atomic layer deposition method |
| 02/24/2005 | US20050039673 Manufacturing method for semiconductor device, semiconductor device and semiconductor wafer |
| 02/24/2005 | US20050039672 Methods for surface-biaxially-texturing amorphous films |
| 02/24/2005 | CA2542174A1 Method and apparatus for bi-planar backward wave oscillator |
| 02/23/2005 | EP1508903A2 Endowed organic semiconductor materials and method of prepration |
| 02/23/2005 | CN1585832A Systems and methods for epitaxially depositing films on semiconductor substrates |
| 02/22/2005 | US6858081 Selective growth method, and semiconductor light emitting device and fabrication method thereof |
| 02/22/2005 | US6858080 Tunable CVD diamond structures |
| 02/22/2005 | US6858078 Apparatus and method for diamond production |
| 02/18/2005 | CA2476168A1 Doped organic semiconductor materials and process for their preparation |
| 02/17/2005 | WO2005015618A1 Substrate for nitride semiconductor growth |
| 02/17/2005 | WO2005015617A1 Semiconductor layer |
| 02/17/2005 | WO2005014897A1 Method to manufacture indium nitride quantum dots |
| 02/17/2005 | WO2005014896A1 A method of fabricating an epitaxially grown layer |
| 02/17/2005 | WO2005014895A1 A method of fabricating an epitaxially grown layer |
| 02/17/2005 | WO2005014886A1 Method of coating for diamond electrode |
| 02/17/2005 | US20050037526 Nitride semiconductor substrate production method thereof and semiconductor optical device using the same |
| 02/17/2005 | US20050036933 high temperature, high strength composite nanostructure metal carbides, formed by heating carbon nanotubes with reactive gases to form in situ solid carbides |
| 02/17/2005 | US20050035349 Epitaxial wafer and method for manufacturing method |
| 02/17/2005 | US20050034668 Multi-component substances and apparatus for preparation thereof |
| 02/17/2005 | US20050034665 Apparatus for forming a film by CVD |
| 02/17/2005 | US20050034650 Ultrahard diamonds and method of making thereof |
| 02/17/2005 | DE10334202A1 CVD-Verfahren zum Abscheiden mindestens einer III-VN-Schicht auf einem Substrat CVD process for depositing at least one III-VN-layer on a substrate |
| 02/16/2005 | CN1582520A Method for fabricating semiconductor light emitting element, semiconductor light emitting element, method for fabricating semiconductor element, semiconductor element, method for fabricating element a |
| 02/15/2005 | US6855971 Haze-free BST films |
| 02/15/2005 | US6855621 Method of forming silicon-based thin film, method of forming silicon-based semiconductor layer, and photovoltaic element |
| 02/15/2005 | US6855376 Overcoating metal layer; vapor deposition; low density, high strength, toughness, flexibility |
| 02/15/2005 | US6855368 Chemisorbing alternating monolayers of two compounds with a carrier gas to control a quantity of the fluorine atoms associated with the monolayer |
| 02/10/2005 | WO2005013343A1 Vapor deposition apparatus and vapor deposition method |
| 02/10/2005 | WO2005013326A2 Epitaxial growth of relaxed silicon germanium layers |
| 02/10/2005 | US20050032345 Group III-nitride growth on Si substrate using oxynitride interlayer |