| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 05/05/2005 | US20050092230 Method for fabricating a semiconductor crystal |
| 05/04/2005 | EP1528122A1 Chemical vapor deposition unit |
| 05/04/2005 | EP1528121A2 Silicon carbide-coated carbonaceous material |
| 05/04/2005 | EP1159465A4 Processing chamber for atomic layer deposition processes |
| 05/04/2005 | CN1612956A Coloured diamond |
| 05/04/2005 | CN1612955A Boron doped diamond |
| 05/04/2005 | CN1612294A Method for manufacturing multi-layerstructure having strain and field effect transistor having strair layer |
| 05/04/2005 | CN1611637A Chemical vapor deposition unit |
| 05/04/2005 | CN1611635A Silicon carbide-coated carbonaceous material and carbonaceous material to be coated with silicon carbide |
| 05/03/2005 | US6887794 Pre-cleaning method of substrate for semiconductor device |
| 05/03/2005 | US6887736 Method of forming a p-type group II-VI semiconductor crystal layer on a substrate |
| 05/03/2005 | US6887576 Quartz reacted with solution of metal compound or metal element to form silicon oxide body doped with metal elements, which when reacted with plasma gas such a fluorine, form compounds with higher boiling points than silicon fluoride |
| 05/03/2005 | US6887144 Surface impurity-enriched diamond and method of making |
| 04/28/2005 | WO2005038889A1 The method for allngan epitaxial growth on silicon substrate |
| 04/28/2005 | WO2005037710A1 Method for the synthesis of filament structures on a nanometre scale and electronic components comprising such structures |
| 04/28/2005 | WO2005019104A3 Controlled nanotube fabrication and uses |
| 04/28/2005 | US20050089680 3C-sic nanowhisker and synthesizing method and 3c-sic nanowhisker |
| 04/28/2005 | US20050089467 Process control during (plasma enhanced) chemical vapor deposition independent of the catalyst particle size by controlling the residence time of reactive gases in the reactor |
| 04/27/2005 | EP1525340A2 Method for producing by vapour-phase epitaxy a gallium nitride film with low defect density |
| 04/27/2005 | EP1343926B1 Method for depositing especially crystalline layers |
| 04/27/2005 | EP1230421B1 Method of modifying source chemicals in an ald process |
| 04/27/2005 | CN2695450Y Device for preparing zinc oxide whiskers array material |
| 04/27/2005 | CN1611095A Induction heating devices and methods for controllably heating an article |
| 04/26/2005 | US6885031 Integrated circuit including single crystal semiconductor layer on non-crystalline layer |
| 04/26/2005 | US6884701 Process for fabricating semiconductor device |
| 04/26/2005 | US6884291 Laser diode having an active layer containing N and operable in a 0.6 μm wavelength band |
| 04/21/2005 | WO2005036593A2 Deposition of silicon-containing films from hexachlorodisilane |
| 04/21/2005 | US20050085079 Method of growing boron doped single crystal diamond in a plasma reactor |
| 04/21/2005 | US20050082563 Group iii nitride semiconductor device and its method of manufacture |
| 04/21/2005 | US20050081781 Fully dry, Si recess free process for removing high k dielectric layer |
| 04/20/2005 | EP1523463A2 Diamondoid-based components in nanoscale construction |
| 04/20/2005 | CN1608310A Methods of hyperdoping semiconductor materials and hyperdoped semiconductor materials and devices |
| 04/20/2005 | CN1608148A Apparatus and method for diamond production |
| 04/20/2005 | CN1607683A Nitride semiconductors on silicon substrate and method of manufacturing the same |
| 04/20/2005 | CN1607641A Process for producing an epitaxial layer of gallium nitride |
| 04/19/2005 | US6881651 Methods and devices using group III nitride compound semiconductor |
| 04/19/2005 | US6881635 Strained silicon NMOS devices with embedded source/drain |
| 04/19/2005 | US6881263 Method of growing a thin film onto a substrate |
| 04/19/2005 | US6881262 Methods for forming high purity components and components formed thereby |
| 04/19/2005 | US6881260 Process for direct deposition of ALD RhO2 |
| 04/19/2005 | US6881259 In-situ monitoring and control of germanium profile in silicon-germanium alloy films and temperature monitoring during deposition of silicon films |
| 04/14/2005 | WO2005034220A1 Method of vapor phase growth and vapor phase growth apparatus |
| 04/14/2005 | WO2005034219A1 Production method for silicon epitaxial wafer, and silicon epitaxial wafer |
| 04/14/2005 | WO2005034196A2 Atomic layer deposition of hafnium-based high-k dielectric |
| 04/14/2005 | WO2004105098A3 P-type group ii-vi semiconductor compounds |
| 04/14/2005 | US20050079690 Method for producing silicon epitaxial wafer |
| 04/14/2005 | US20050077512 Nitride semiconductors on silicon substrate and method of manufacturing the same |
| 04/14/2005 | US20050076830 Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate |
| 04/14/2005 | US20050076828 Process for fabrication of III nitride-based compound semiconductors |
| 04/14/2005 | DE19520961B4 Verfahren zum Bilden einer ferroelektrischen Schicht A method of forming a ferroelectric layer |
| 04/14/2005 | CA2539618A1 Method to reduce stacking fault nucleation sites and reduce vf drift in bipolar devices |
| 04/13/2005 | EP1523034A2 Method of manufacturing silicon carbide film |
| 04/13/2005 | EP1523033A1 Group iii nitride crystal and method for producing same |
| 04/13/2005 | EP1522612A1 Iii-v compound semiconductor crystal and method for production thereof |
| 04/12/2005 | US6878395 Average surface temperature measured optically and level of the gas cushions regulated by varying the individually controlled gas flow producing the cushions; variations lie within a predetermined temperature window. |
| 04/07/2005 | WO2005032217A1 Epitaxial organic layered structure and method for making |
| 04/07/2005 | WO2005031045A2 Method of producing self-supporting substrates comprising iii-nitrides by means of heteroepitaxy on a sacrificial layer |
| 04/07/2005 | WO2005031044A1 Susceptor for induction-heated epitaxial reactors |
| 04/07/2005 | WO2005031043A1 Method and facility for the production of a layer-like part |
| 04/07/2005 | US20050072498 Chemical vapor deposition production of high density replacements for depleted uranium ballistic materials; environmental and human safety |
| 04/07/2005 | US20050072353 Method of manufacturing gallium nitride-based single crystal substrate |
| 04/07/2005 | US20050072351 Direct synthesis of oxide nanostructures of low-melting metals |
| 04/06/2005 | EP1521310A2 Nitride semiconductor substrate and method of producing same |
| 04/06/2005 | EP1521295A2 Method for forming an epitaxial layer sequence in a component and optoelectronic semiconductor chip |
| 04/06/2005 | EP1294640A4 Method and apparatus for production of high purity silicon |
| 04/06/2005 | CN1196177C Combination of heating furnace and loading tool of semiconductor substrate and mfg. method of semiconductor device |
| 04/06/2005 | CN1196176C GaN monocrystal substrate |
| 04/06/2005 | CN1196172C Method for producing semiconductor structure with metal oxide interface between silicons |
| 04/05/2005 | US6876013 Compound semiconductor multilayer structure and bipolar transistor using the same |
| 04/05/2005 | US6875279 Single reactor, multi-pressure chemical vapor deposition for semiconductor devices |
| 04/05/2005 | US6875273 Method and system for manufacturing III-V Group compound semiconductor and III-V Group compound semiconductor |
| 04/05/2005 | US6875271 Simultaneous cyclical deposition in different processing regions |
| 03/31/2005 | WO2005029560A1 Method of epitaxial growth and substrate for epitaxial growth |
| 03/31/2005 | WO2005029542A2 Apparatus and method for point-of-use treatment of effluent gas streams |
| 03/31/2005 | WO2005028702A2 Precursor delivery system |
| 03/31/2005 | US20050070076 Method of depositing high-quality sige on sige substrates |
| 03/31/2005 | US20050066892 Deposition of silicon-containing films from hexachlorodisilane |
| 03/31/2005 | US20050066886 Method of fabrication of a substrate for an epitaxial growth |
| 03/31/2005 | US20050066885 Group III-nitride semiconductor substrate and its manufacturing method |
| 03/31/2005 | US20050066884 Method of growing a single crystal diamond |
| 03/30/2005 | EP1519409A1 A method of fabrication of a substrate for an epitaxial growth |
| 03/29/2005 | US6872988 Semiconductor films on flexible iridium substrates |
| 03/29/2005 | US6872259 Method of and apparatus for tunable gas injection in a plasma processing system |
| 03/29/2005 | US6871528 Method of producing a branched carbon nanotube for use with an atomic force microscope |
| 03/24/2005 | WO2005027201A1 Method of fabrication and device comprising elongated nanosize elements |
| 03/24/2005 | WO2004102648A3 Reactor surface passivation through chemical deactivation |
| 03/24/2005 | US20050064717 Plasma processing apparatus |
| 03/24/2005 | US20050064684 Process for deposition of semiconductor films |
| 03/24/2005 | US20050064206 Gallium-nitride deposition substrate, method of manufacturing gallium-nitride deposition substrate,and method of manufacturing |
| 03/24/2005 | US20050064158 Noncatalytically forming a nanowire on a substrate from an organometallic vapor without any type of reducing agent; use of Copper (ethylacetoacetate)trialkyl phosphite as copper precursor for example; integrated circuits |
| 03/24/2005 | US20050064098 thin metal films by atomic layer deposition: tungsten nucleation layer over a silicon wafer; copper film from CuCl and triethylboron; vapor phase pulses in inert gas |
| 03/24/2005 | US20050061233 Method of forming an N-type doped single crystal diamond |
| 03/24/2005 | US20050061232 Doped organic semiconductor materials and process for their preparation |
| 03/24/2005 | DE10338406A1 Dotierte organische Halbleitermaterialien sowie Verfahren zu deren Herstellung Doped organic semiconductor materials as well as processes for their preparation |
| 03/23/2005 | CN1599032A Growth GaN film on silicon substrate using hydride vapaur phase epitaxial method |
| 03/23/2005 | CN1599031A Method of preparing high quality non-polar GaN self-support substrate |
| 03/23/2005 | CN1598081A Technology for continuous producing four-feet shape zine oxide whisker and rotating furnace thereof |
| 03/23/2005 | CN1194385C Nitride III semiconductor device and producing method for semiconductor layer |
| 03/22/2005 | US6869880 In situ application of etch back for improved deposition into high-aspect-ratio features |
| 03/22/2005 | US6869702 Substrate for epitaxial growth |