Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
06/2005
06/07/2005US6902989 Method for manufacturing gallium nitride (GaN) based single crystalline substrate that include separating from a growth substrate
06/07/2005US6902763 Method for depositing nanolaminate thin films on sensitive surfaces
06/07/2005US6902716 Combines deposition of synthetic diamond films with reactive etching processes; forming diamond nuclei on substrate, growing layer of textured diamond film on substrate, etching textured diamond film
06/07/2005US6902623 Reactor having a movable shutter
06/07/2005US6902622 Systems and methods for epitaxially depositing films on a semiconductor substrate
06/07/2005US6902620 Atomic layer deposition systems and methods
06/02/2005WO2005050709A2 LARGE AREA, UNIFORMLY LOW DISLOCATION DENSITY GaN SUBSTRATE AND PROCESS FOR MAKING THE SAME
06/02/2005US20050118825 Process for producing group III nitride compound semiconductor
06/02/2005US20050118752 Method of making substrates for nitride semiconductor devices
06/02/2005US20050118090 Continuous, catalytic growth to desired length during passage through furnace
06/02/2005US20050116242 Method for manufacture of an epitaxial structural element layer sequence and optoelectronic semiconductor chip
06/02/2005US20050115492 Method and apparatus of the chemical metal organic vapor epitaxy for the multi-chamber epitaxy layer deposition
06/02/2005CA2544878A1 Large area, uniformly low dislocation density gan substrate and process for making the same
06/01/2005EP1536044A1 Silicon wafer for epitaxial growth, epitaxial wafer, and its manufacturing method
06/01/2005EP1536043A1 N-type semiconductor diamond producing method and semiconductor diamond
06/01/2005CN1623220A Crystal manufacturing method
06/01/2005CN1622302A Three buffer layer method for preparing high quality zinc oxide monocrystalline film
06/01/2005CN1621578A Lithium niobate substrate and manufacturing method thereof
06/01/2005CN1204598C Preparation method of gamma-LiAl02/alpha-Al203 composite base material
05/2005
05/31/2005US6900522 Chamfered semiconductor wafer and method of manufacturing the same
05/31/2005US6900413 Hot wall rapid thermal processor
05/31/2005US6900115 Deposition over mixed substrates
05/31/2005US6900070 Dislocation reduction in non-polar gallium nitride thin films
05/31/2005US6900067 Growth of III-nitride films on mismatched substrates without conventional low temperature nucleation layers
05/31/2005US6899764 Chemical vapor deposition reactor and process chamber for said reactor
05/26/2005WO2005048332A1 Method for manufacturing compound semiconductor epitaxial substrate
05/26/2005WO2005048331A1 Process for producing silicon epitaxial wafer
05/26/2005WO2005048330A1 Formation of lattice-tuning semiconductor substrates
05/26/2005WO2005048297A2 Nanostructures including a metal
05/26/2005WO2005047574A2 Heteroepitaxial layer and method for the production thereof
05/26/2005WO2005031045A3 Method of producing self-supporting substrates comprising iii-nitrides by means of heteroepitaxy on a sacrificial layer
05/26/2005WO2005017938A3 Method and apparatus for bi-planar backward wave oscillator
05/26/2005WO2005010965A3 METHOD AND STRUCTURE OF STRAIN CONTROL OF SiGe BASED PHOTODETECTORS AND MODULATORS
05/26/2005US20050112793 Methods of forming a high conductivity diamond film and structures formed thereby
05/26/2005US20050112281 Growth of dilute nitride compounds
05/26/2005US20050109282 Method for manufacturing diamond coatings
05/26/2005US20050109268 Single crystal diamond tool
05/26/2005US20050109267 Method of growing single crystal diamond in a plasma reactor
05/26/2005US20050109266 Arc jet microwave plasma method of growing single crystal diamond
05/26/2005US20050109265 Single crystal synthetic diamond
05/26/2005US20050109264 Method of growing a single crystal diamond
05/26/2005US20050109262 Boron doped single crystal diamond electrochemical synthesis electrode
05/25/2005EP1533836A1 Method for manufacturing silicon epitaxial wafer
05/25/2005EP1533834A1 Vapor phase epitaxial apparatus and vapor phase epitaxial method
05/25/2005EP1533833A1 Vapor phase epitaxy device
05/25/2005EP1533402A1 Epitaxial wafer and its manufacturing method
05/25/2005EP1532292A1 Atomic deposition layer methods
05/25/2005EP1532288A2 A hybrid beam deposition system and methods for fabricating zno films, p-type zno films, and zno-based ii-vi compound semiconductor devices
05/25/2005DE10392291T5 Energie-effizientes Verfahren zum Züchten von polykristallinem Silicium Energy-efficient method for growing of polycrystalline silicon,
05/25/2005DE10341806A1 Verfahren zur Herstellung einer epitaktischen Silizium-Germanium Schicht und integriertes Halbleiterbauelement mit einer epitaktischen mit Arsen in-situ dotierten Silizium-Germanium Schicht A process for producing an epitaxial silicon-germanium layer and integrated semiconductor device with an epitaxial doped with arsenic in-situ silicon-germanium layer
05/25/2005DE10196361T5 Verfahren zur Herstellung eines Gruppe-III-Nitrid-Halbleiterkristalls, Verfahren zur Herstellung eines Verbindungshalbleiters auf Basis von Galliumnitrid, ein Verbindungshalbleiter auf Basis von Galliumnitrid, ein lichtemittierendes Bauelement aus einem Verbindungshalbleiter auf Basis von Galliumnitrid und eine Lichtquelle, die das lichtemittierende Halbleiterbauelement verwendet A method for producing a group III nitride semiconductor crystal, method of manufacturing a compound semiconductor based on gallium nitride, a compound semiconductor based on gallium nitride, a light emitting device made of a compound semiconductor on the basis of gallium nitride and a light source using the light-emitting semiconductor component
05/24/2005US6897603 Catalyst for carbon nanotube growth
05/24/2005US6897560 Ultraviolet-transparent conductive film and process for producing the same
05/24/2005US6897138 Method and apparatus for producing group III nitride compound semiconductor
05/24/2005US6897129 Fabrication method of semiconductor device and semiconductor device
05/24/2005US6896738 Induction heating devices and methods for controllably heating an article
05/24/2005US6896731 P-type single crystal zinc-oxide having low resistivity and method for preparation thereof
05/24/2005US6896730 Atomic layer deposition apparatus and methods
05/19/2005US20050106883 Crystal manufacturing method
05/19/2005US20050106877 Method for depositing nanolaminate thin films on sensitive surfaces
05/19/2005US20050106864 Process and device for depositing semiconductor layers
05/19/2005US20050106763 Real-time detection mechanism with self-calibrated steps for the hardware baseline to detect the malfunction of liquid vaporization system in AMAT TEOS-based Dxz Chamber
05/19/2005US20050106423 Carbonceous substrate such as graphite, coated by silicon carbide with reduced nitrogen and boron imputities; used as tools or jigs for the production of epitaxial layers of SiC semiconductors
05/19/2005US20050104082 Nitride semiconductor substrate and its production method
05/19/2005US20050103265 Gas distribution showerhead featuring exhaust apertures
05/19/2005US20050103260 Method of exposing wafer using scan-type exposure apparatus
05/19/2005US20050103259 Method of growing selective area by metal organic chemical vapor deposition
05/19/2005US20050103258 Epitaxial organic layered structure and method for making
05/19/2005US20050103257 Large area, uniformly low dislocation density GaN substrate and process for making the same
05/18/2005EP1530800A2 Semiconductor heterostructures having reduced dislocation pile-ups and related methods
05/18/2005EP1028797B1 Getter-based gas purifier, its uses in a semiconductor manufacturing system and in a method of making an integrated circuit device and a method of protecting a getter column
05/18/2005CN1618117A Susceptor, vapor phase growth device, device and method of manufacturing epitaxial wafer, and epitaxial wafer
05/18/2005CN1618116A Method of fabricating group-III nitride semiconductor crystal, method of fabricating gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor, gallium nitride-based c
05/18/2005CN1618115A Method of producing integrated semiconductor components on a semiconductor substrate
05/18/2005CN1202557C Nitride-based compound semiconductor crystal substrate structure and mfg. method thereof
05/17/2005US6894323 Group III nitride semiconductor device and its method of manufacture
05/17/2005US6893965 Method of producing semiconductor device
05/17/2005US6893945 Method for manufacturing gallium nitride group compound semiconductor
05/17/2005US6893506 Comprises exposing semiconductor substrates to vacuum maintained by non-roughing pumps
05/17/2005US6893503 Method of manufacturing a semiconductor device
05/12/2005WO2005043604A2 Growth and integration of epitaxial gallium nitride films with silicon-based devices
05/12/2005WO2005022590A3 Method of producing biaxially textured buffer layers and related articles, devices and systems
05/12/2005US20050099111 Method for the preparation of graphite nanofibers and emitter and display elements comprising the nanofibers
05/12/2005US20050098115 Atmospheric substrate processing apparatus for depositing multiple layers on a substrate
05/12/2005US20050098093 Method of fabricating an epitaxial silicon-germanium layer and an integrated semiconductor device comprising an epitaxial arsenic in-situ doped silicon-germanium layer
05/12/2005US20050098092 Epitaxial silicon wafer with intrinsic gettering and a method for the preparation thereof
05/10/2005US6890816 Compound semiconductor structure including an epitaxial perovskite layer and method for fabricating semiconductor structures and devices
05/10/2005US6890809 Method for fabricating a P-N heterojunction device utilizing HVPE grown III-V compound layers and resultant device
05/10/2005US6890600 SiC single crystal, method for manufacturing SiC single crystal, SiC wafer having an epitaxial film, method for manufacturing SiC wafer having an epitaxial film, and SiC electronic device
05/06/2005WO2005040453A2 Control of carbon nanotube diameter using cvd or pecvd growth
05/06/2005WO2005028702A3 Precursor delivery system
05/05/2005US20050095861 GaN single-crystal substrate, nitride type semiconductor epitaxial substrate, nitride type semiconductor device, and methods of making the same
05/05/2005US20050093098 Semiconductor device and method for fabricating the same
05/05/2005US20050093003 III-V group nitride system semiconductor substrate
05/05/2005US20050092248 Chemical vapor deposition unit
05/05/2005US20050092246 Device for depositing thin layers with a wireless detection of process parameters
05/05/2005US20050092242 Staggered ribs on process chamber to reduce thermal effects
05/05/2005US20050092235 Epitaxial semiconductor deposition methods and structures
05/05/2005US20050092234 Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate
05/05/2005US20050092233 Single and multi-layer crystalline structures
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