Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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07/27/2005 | CN1212695C Semiconductor device and semiconductor base board and their manufacturing method |
07/21/2005 | WO2005067049A1 Isotopically pure silicon-on-insulator wafers and method of making same |
07/21/2005 | WO2005067017A1 Vaporizer for cvd, solution voporizing cvd system and voporization method for cvd |
07/21/2005 | WO2005065143A2 Isotopically pure silicon-on-insulator wafers and method of making same |
07/21/2005 | US20050156175 High quality nitride semiconductor thin film and method for growing the same |
07/21/2005 | US20050156155 Electronics, opto-electronic, magneto-electronics and magneto-optics devices, single crystal, integrated circuits |
07/21/2005 | US20050155543 Diamond single crystal substrate manufacturing method and diamond single crystal substrate |
07/20/2005 | EP1555686A2 High quality nitride semiconductor thin film and method for growing the same |
07/20/2005 | EP1555337A2 Diamond single crystal substrate manufacturing method and diamond single crystal substrate |
07/20/2005 | EP1554417A1 Hydride vpe reactor |
07/20/2005 | CN1643677A Method and resulting structure for manufacturing semiconductor substrates |
07/20/2005 | CN1643188A Method for preparing sic crystal and SiC crystal |
07/20/2005 | CN1641835A High quality nitride semiconductor thin film and method for growing the same |
07/19/2005 | US6919261 Method and resulting structure for manufacturing semiconductor substrates |
07/19/2005 | US6918961 Group III nitride compound semiconductor device and producing method therefor |
07/19/2005 | US6918352 Method for producing coated workpieces, uses and installation for the method |
07/14/2005 | WO2005064661A1 Method for producing group iii nitride crystal, group iii nitride crystal obtained by such method, and group iii nitride substrate using same |
07/14/2005 | WO2005064643A1 NON-POLAR (A1,B,In,Ga)N QUANTUM WELLS |
07/14/2005 | US20050150452 Process kit design for deposition chamber |
07/13/2005 | EP1553215A2 Diamond single crystal composite substrate and method for manufacturing the same |
07/13/2005 | EP1551768A1 Process for manufacturing a gallium rich gallium nitride film |
07/13/2005 | CN1210445C Thick signal crystal diamond layer, its producing method and gemstones produced from the same layer |
07/12/2005 | US6916717 Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate |
07/12/2005 | US6916373 Semiconductor manufacturing method |
07/07/2005 | WO2005062357A1 Strained semiconductor substrate and processes therefor |
07/07/2005 | WO2005061400A1 Method of incorporating a mark in cvd diamond |
07/07/2005 | WO2004111319A3 Sacrificial template method of fabricating a nanotube |
07/07/2005 | US20050148455 High purity silicon carbide articles and methods |
07/07/2005 | US20050148206 Atomic layer deposition using photo-enhanced bond reconfiguration |
07/07/2005 | US20050148162 Method of preventing surface roughening during hydrogen pre-bake of SiGe substrates using chlorine containing gases |
07/07/2005 | US20050148161 Method of preventing surface roughening during hydrogen prebake of SiGe substrates |
07/07/2005 | US20050148108 Manufacturing method of monocrystalline gallium nitride localized substrate |
07/07/2005 | US20050147765 Method for producing particles with diamond structure |
07/07/2005 | US20050145172 Single reactor, multi-pressure chemical vapor deposition for semiconductor devices |
07/07/2005 | US20050145165 Lithium niobate substrate and method of producing the same |
07/07/2005 | CA2548449A1 Method of incorporating a mark in cvd diamond |
07/06/2005 | EP1549787A1 Method and apparatus for forming epitaxial layers |
07/06/2005 | CN1636087A Method for manufacturing a free-standing substrate made of monocrystalline semi-conductor material |
07/05/2005 | US6914675 Ellipsometric method and control device for making a thin-layered component |
06/30/2005 | WO2005059981A1 Vapor growth device and production method for epitaxial wafer |
06/30/2005 | WO2005059973A2 Controlled growth of gallium nitride nanostructures |
06/30/2005 | WO2005027201A8 Method of fabrication and device comprising elongated nanosize elements |
06/30/2005 | WO2004042798A3 Apparatus and method for treating objects with radicals generated from plasma |
06/30/2005 | US20050142890 Atomic layer deposition apparatus and method |
06/30/2005 | US20050142391 Method and apparatus for fabricating crack-free Group III nitride semiconductor materials |
06/30/2005 | US20050139960 III-V nitride semiconductor substrate and its production lot, and III-V nitride semiconductor device and its production method |
06/30/2005 | US20050139150 Diamond single crystal composite substrate and method for manufacturing the same |
06/30/2005 | DE10352655A1 Heteroepitaxieschicht und Verfahren zu ihrer Herstellung Heteroepitaxieschicht and processes for their preparation |
06/29/2005 | EP1548807A1 Method for depositing a group III-nitride material on a silicon substrate and device thereof |
06/29/2005 | EP1547145A2 Method for the production of a composite sicoi-type substrate comprising an epitaxy stage |
06/29/2005 | EP1335997B1 Method and device for controlling the surface temperatures of substrates in a chemical vapour deposition reactor |
06/29/2005 | CN1632186A Process for non-mask transverse epitaxial growth of high quality gallium nitride |
06/29/2005 | CN1632185A Process for preparing low-temperature phase barium metaborate monocrystalline film through magnetron sputtering |
06/28/2005 | US6911367 Methods of forming semiconductive materials having flattened surfaces; methods of forming isolation regions; and methods of forming elevated source/drain regions |
06/28/2005 | US6911084 Low temperature epitaxial growth of quaternary wide bandgap semiconductors |
06/28/2005 | US6911083 Method for producing powders made of gallium nitride and apparatus for producing the same |
06/23/2005 | WO2005056869A1 A method for manufacturing diamond coatings |
06/23/2005 | WO2005056290A1 Novel polymer films and textile laminates containing such polymer films |
06/23/2005 | US20050136762 Laminates of a textile material and a polymer film having regions of differing translucency made by selectively compressing regions of the polymer film; breathable and/or waterproof for garments, tents |
06/23/2005 | US20050136564 Method of laterally growing GaN with indium doping |
06/23/2005 | US20050133812 Fabrication method of nitride semiconductors and nitride semiconductor structure fabricated thereby |
06/23/2005 | US20050133798 Nitride semiconductor template for light emitting diode and preparation thereof |
06/23/2005 | US20050133159 Systems and methods for epitaxially depositing films on a semiconductor substrate |
06/23/2005 | US20050132954 Method and device for the temperature control of surface temperatures of substrates in a CVD reactor |
06/23/2005 | US20050132952 Semiconductor alloy with low surface roughness, and method of making the same |
06/23/2005 | US20050132950 Method of growing aluminum-containing nitride semiconductor single crystal |
06/22/2005 | EP1543181A1 Single crystal diamond |
06/22/2005 | EP1325177B1 Method for depositing, in particular, crystalline layers, a gas inlet element, and device for carrying out said method |
06/22/2005 | CN1630935A Vapor phase epitaxy device |
06/22/2005 | CN1630030A Plasma processing device and semiconductor mfg. device |
06/22/2005 | CN1207450C Process for preparing crystal film for components to emit blue light |
06/21/2005 | US6908866 Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD |
06/21/2005 | US6908691 Metal strip for epitaxial coatings and method for the production thereof |
06/16/2005 | WO2005055247A2 Methods for surface-biaxially-texturing amorphous films |
06/16/2005 | WO2005003414A8 Substrate for thin-film formation, thin-film substrate and light emitting element |
06/16/2005 | WO2004084268A3 Epitaxial semiconductor deposition methods and structures |
06/16/2005 | US20050130434 Method of surface pretreatment before selective epitaxial growth |
06/16/2005 | US20050130341 Selective synthesis of semiconducting carbon nanotubes |
06/16/2005 | US20050126496 Wafer carrier for growing GaN wafers |
06/16/2005 | DE10392595T5 Verfahren und System zum Erwärmen von Halbleitersubstraten in einer Behandlungskammer, welche eine Aufnahme enthält A method and system for heating semiconductor substrates in a treatment chamber containing a receptacle |
06/16/2005 | DE102004056741A1 Lithium niobate substrate, useful as acoustic surface wave device for mobile telephones, is prepared by heat treating crystalline material at relatively low temperature |
06/15/2005 | EP1540050A1 Lightly doped silicon carbide wafer and use thereof in high power devices |
06/15/2005 | CN1628371A Vapor phase epitaxial apparatus and vapor phase epitaxial method |
06/14/2005 | US6906351 Group III-nitride growth on Si substrate using oxynitride interlayer |
06/14/2005 | US6905771 Silicon wafer |
06/14/2005 | US6905548 Device for the deposition of crystalline layers on crystalline substrates |
06/14/2005 | US6905543 Methods of forming tungsten nucleation layer |
06/09/2005 | WO2005053042A1 Method for fabricating gan-based nitride layer |
06/09/2005 | WO2005052998A2 Gas distribution showerhead featuring exhaust apertures |
06/09/2005 | WO2005052222A1 Growth of dilute nitride compounds |
06/09/2005 | WO2005028702B1 Precursor delivery system |
06/09/2005 | WO2005010227A3 Chemical vapor deposition reactor |
06/09/2005 | US20050124242 Laminates of a textile material and a polymer film having regions of differing translucency made by selectively compressing regions of the polymer film; breathable and/or waterproof for garments, tents |
06/09/2005 | US20050124170 Strained semiconductor substrate and processes therefor |
06/09/2005 | US20050124169 Truncated dummy plate for process furnace |
06/09/2005 | US20050124166 In situ application of etch back for improved deposition into high-aspect-ratio features |
06/09/2005 | US20050124161 Growth and integration of epitaxial gallium nitride films with silicon-based devices |
06/09/2005 | US20050121693 Boron phosphide-based semiconductor device production method thereof light-emitting diode and boron phosphide-based semiconductor layer |
06/09/2005 | US20050121088 Semiconductor processing reactive precursor valve assembly |
06/09/2005 | US20050120943 Method and apparatus for growing silicon carbide crystals |