| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 08/30/2005 | US6935372 Semiconductor processing reactive precursor valve assembly |
| 08/25/2005 | WO2005078780A1 Vapor-phase deposition method |
| 08/25/2005 | WO2005078167A2 Directionally controlled growth of nanowhiskers |
| 08/25/2005 | WO2005043604A3 Growth and integration of epitaxial gallium nitride films with silicon-based devices |
| 08/25/2005 | US20050183660 Method of identifying defect distribution in silicon single crystal ingot |
| 08/25/2005 | US20050183658 AlxInyGa1-x-yN mixture crystal substrate, method of growing AlxInyGa1-x-yN mixture crystal substrate and method of producing AlxInyGa1-x-yN mixture crystal substrate |
| 08/25/2005 | CA2556824A1 Vapor phase growth method |
| 08/24/2005 | EP1566833A2 Method for integration of colloidal nanoparticles within epitaxial layers |
| 08/24/2005 | EP1566468A2 Method for fabrication of integrated circuits and corresponding device |
| 08/24/2005 | EP1565598A1 Optical quality diamond material |
| 08/24/2005 | EP1337700B1 Cvd reactor comprising a substrate holder rotatably mounted and driven by a gas flow |
| 08/24/2005 | CN1659309A Deposition methods utilizing phased array microwave excitation, and deposition apparatuses |
| 08/23/2005 | US6933225 Graded thin films |
| 08/23/2005 | US6933213 Method for fabricating group III-V compound semiconductor substrate |
| 08/23/2005 | US6932954 From trichlorosilane and hydrogen; high temperature heating; by-product inhibition |
| 08/23/2005 | US6932867 Method for growing thin oxide films |
| 08/23/2005 | US6932866 Method for depositing in particular crystalline layers |
| 08/18/2005 | WO2005076345A1 Substrate with determinate thermal expansion coefficient |
| 08/18/2005 | WO2005074451A2 Technique for perfecting the active regions of wide bandgap semiconductor nitride devices |
| 08/18/2005 | US20050181627 Method for preparing sic crystal and sic crystal |
| 08/18/2005 | US20050181623 Silicon carbide deposition for use as a low dielectric constant anti-reflective coating |
| 08/18/2005 | US20050181555 Thin films |
| 08/18/2005 | US20050181131 monocrystalline diamond, adapted for use as semiconductors or waveguides |
| 08/18/2005 | US20050178471 having a larger low-defective region on its surface; seed crystal portion is formed into stripes on a substrate with a buffer layer sandwiched therebetween |
| 08/18/2005 | US20050178336 Chemical vapor deposition reactor having multiple inlets |
| 08/18/2005 | US20050178318 Method of growing crystal of compound semiconductor and method of manufacturing compound semiconductor device |
| 08/18/2005 | DE102004060633A1 Halbleiterlegierung mit einer geringen Oberflächenrauheit, und entsprechendes Herstellungsverfahren Semiconductor alloy with a low surface roughness, and manufacturing method thereof |
| 08/17/2005 | EP1564795A2 Method of growing crystal of compound semiconductor and method of manufacturing compound semiconductor device |
| 08/17/2005 | EP1563547A1 Nanostructure, electronic device having such nanostructure and method of preparing nanostructure |
| 08/17/2005 | EP1563122A2 Method for forming carbon nanotubes |
| 08/17/2005 | EP1563121A2 Method for forming carbon nanotubes |
| 08/17/2005 | CN1656616A High voltage switching devices and process for forming same |
| 08/17/2005 | CN1656603A Formation of lattice-tuning semiconductor substrates |
| 08/16/2005 | US6930329 Method for manufacturing gallium nitride compound semiconductor |
| 08/16/2005 | US6929695 Method for preparing single crystal oxide thin film |
| 08/11/2005 | WO2005074048A1 Free-standing semiconductor substrate and the manufacturing method and manufacturing apparatus thereof |
| 08/11/2005 | WO2004104274A3 Zinc oxide crystal growth substrate |
| 08/11/2005 | US20050176262 Process for producing epitaxial silicon wafer and silicon wafer produced by process thereof |
| 08/11/2005 | US20050176249 Controlled growth of gallium nitride nanostructures |
| 08/11/2005 | US20050176217 Method to fabricate patterned strain-relaxed sige epitaxial with threading dislocation density control |
| 08/11/2005 | US20050173715 Nitride semiconductor devices and method of their manufacture |
| 08/11/2005 | US20050173705 Fabrication method of semiconductor device and semiconductor device |
| 08/11/2005 | US20050173386 Light irradiation heat treatment method and light irradiation heat treatment apparatus |
| 08/10/2005 | EP1562224A1 Gas driven planetary rotation apparatus and methods of using the same |
| 08/10/2005 | CN1653591A Process and system for heating semiconductor substrates in a processing chamber containing a susceptor |
| 08/10/2005 | CN1651616A Diamond single crystal composite substrate and method for manufacturing the same |
| 08/10/2005 | CN1214472C Device and method for mfg. GaN base |
| 08/10/2005 | CN1214467C Semiconductor device, semiconductor layer and production method thereof |
| 08/10/2005 | CN1214447C Chemical vapour-phase deposition device and chemical vapour-phase deposition method |
| 08/09/2005 | US6927155 Process for producing semiconductor layers based on III-V nitride semiconductors |
| 08/04/2005 | WO2005071137A1 Process kit design for deposition chamber |
| 08/04/2005 | WO2005059973A3 Controlled growth of gallium nitride nanostructures |
| 08/04/2005 | WO2005040453A3 Control of carbon nanotube diameter using cvd or pecvd growth |
| 08/04/2005 | US20050170664 Manufacturing method for strained silicon wafer |
| 08/04/2005 | US20050167697 High voltage switching devices and process for forming same |
| 08/04/2005 | US20050167686 Nitride semiconductor thin film and method for growing the same |
| 08/04/2005 | US20050167683 Sapphire/gallium nitride laminate having reduced bending deformation |
| 08/04/2005 | US20050166836 Vapor-phase epitaxial apparatus and vapor phase epitaxial method |
| 08/04/2005 | US20050166835 Vapor phase growth method for al-containing III-V group compound semiconductor, and method and device for producing al-containing IIl-V group compound semiconductor |
| 08/04/2005 | US20050166834 Rare earth-oxides, rare earth-nitrides, rare earth-phosphides and ternary alloys with silicon |
| 08/03/2005 | EP1560259A2 Nitride semiconductor thin film and method for growing the same |
| 08/03/2005 | CN1650407A Method for growing a monocrystalline oxide on semiconductor device |
| 08/03/2005 | CN1649181A Self-supported nitride semiconductor substrate and its production method, and light-emitting nitride semiconductor device using it |
| 08/03/2005 | CN1649090A Nitride semiconductor thin film and method for growing the same |
| 08/02/2005 | US6924968 Haze-free BST films |
| 08/02/2005 | US6924463 Pyrometer calibrated wafer temperature estimator |
| 08/02/2005 | US6924159 Semiconductor substrate made of group III nitride, and process for manufacture thereof |
| 08/02/2005 | US6923860 Oxidation of material for tunnel magneto-resistive sensors |
| 08/02/2005 | US6923859 Apparatus for manufacturing GaN substrate and manufacturing method thereof |
| 07/28/2005 | WO2005069356A1 Process for producing monocrystal thin film and monocrystal thin film device |
| 07/28/2005 | WO2005068395A2 High purity silicon carbide articles and methods |
| 07/28/2005 | WO2005034196A9 Atomic layer deposition of hafnium-based high-k dielectric |
| 07/28/2005 | WO2004048258A8 Method for forming carbon nanotubes |
| 07/28/2005 | US20050164889 Method of producing biaxially textured buffer layers and related articles, devices and systems |
| 07/28/2005 | US20050164475 Technique for perfecting the active regions of wide bandgap semiconductor nitride devices |
| 07/28/2005 | US20050164432 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices |
| 07/28/2005 | US20050164419 Group III Nitride Crystal Substrate, Method of Its Manufacture, and Group-III Nitride Semiconductor Device |
| 07/28/2005 | US20050164418 Nitride semiconductor, semiconductor device, and method of manufacturing the same |
| 07/28/2005 | US20050164044 Bulk GaN and AlGaN single crystals |
| 07/28/2005 | US20050163928 Subjecting gallium chloride gas generated through the circulation of hydrogen chloride gas over metallic gallium to vapor phase deposition through the reaction with ammonia gas; moving exhaust gas through piping made of a grounded electroconductive corrosion-resistant material |
| 07/28/2005 | US20050163692 Rare earth-oxides, rare earth -nitrides, rare earth -phosphides and ternary alloys with silicon |
| 07/28/2005 | US20050161773 Rare earth-oxides, rare earth nitrides, rare earth phosphides and ternary alloys with silicon |
| 07/28/2005 | US20050161772 Self-supported nitride semiconductor substrate and its production method, and light-emitting nitride semiconductor device using it |
| 07/28/2005 | US20050161697 AlxInyGa1-x-yN mixture crystal substrate, method of growing same and method of producing same |
| 07/28/2005 | US20050161688 Process for production of nitride semiconductor device and nitride semiconductor device |
| 07/28/2005 | US20050161663 Rare earth-oxides, rare earth -nitrides, rare earth -phosphides and ternary alloys with silicon |
| 07/28/2005 | US20050160984 Method and apparatus for ALD on a rotary susceptor |
| 07/28/2005 | US20050160972 Method and resulting structure for manufacturing semiconductor substrates |
| 07/28/2005 | US20050160971 Method for manufacturing silicon epitaxial wafer |
| 07/28/2005 | US20050160969 Apparatus and method for diamond production |
| 07/28/2005 | US20050160965 Seed crystal of silicon carbide single crystal and method for producing ingot using same |
| 07/27/2005 | EP1557870A2 Group III nitride crystal substrate, method of its manufacture, and group-III nitride semiconductor device |
| 07/27/2005 | EP1557868A1 Light irradiation heat treatment method and light irradiation heat treatment apparatus |
| 07/27/2005 | EP1557486A1 Single crystal base thin film |
| 07/27/2005 | EP1557485A1 Method for forming thin film on basic material through intermediate layer |
| 07/27/2005 | CN1647251A Vapor phase growth method for Al-containing III-V group compound semiconductor, and method and device for producing Al-containing III-V group compound semiconductor |
| 07/27/2005 | CN1647244A Gas driven planetary rotation apparatus and methods for forming silicon carbide layers |
| 07/27/2005 | CN1646422A Method for producing nitrides and their uses as fluorescent marks and leds |
| 07/27/2005 | CN1645575A Light irradiation heat treatment method and light irradiation heat treatment apparatus |
| 07/27/2005 | CN1644754A Low-pressure metal organic chemical vapour phase depositing apparatus for zinc oxide and process thereof |