Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
10/2005
10/05/2005CN1678771A Method for producing by vapour-phase epitaxy a gallium nitride film with low defect density
10/05/2005CN1222032C Communicating device
10/04/2005US6951827 Controlling surface chemistry on solid substrates
10/04/2005US6951826 Silicon carbide deposition for use as a low dielectric constant anti-reflective coating
10/04/2005US6951695 Lapping, mechanical polishing, and reducing internal stress of a gallium, aluminum and indium nitride wafer by thermal annealing or chemical etching; crystallographic plane surfaces
09/2005
09/29/2005WO2005090650A1 Compound semiconductor substrate
09/29/2005US20050213950 Cooling device, and apparatus and method for manufacturing image display panel using cooling device
09/29/2005US20050213949 Heating configuration for use in thermal processing chambers
09/29/2005US20050212001 Method for achieving low defect density AlGaN single crystal boules
09/29/2005US20050211988 Method for production of a layer of silicon carbide or a nitride of a group III element on a suitable substrate
09/29/2005US20050211167 Processing device and processing method
09/29/2005US20050211159 Diamond single crystal substrate
09/29/2005US20050211158 Silicon wafer for epitaxial growth, epitaxial wafer, and its manufacturing method
09/28/2005EP1579486A1 Gallium nitride crystal, homoepitaxial gallium-nitride-based devices and method for producing same
09/28/2005CN1673411A Cooling device, and apparatus and method for manufacturing image display panel using cooling device
09/28/2005CN1220800C Susceptor designs for silicon carbide thin films
09/27/2005US6949478 Oxide film forming method
09/27/2005US6949474 Method of manufacturing a semiconductor device and a semiconductor manufacture system
09/27/2005US6949422 Method of crystalizing amorphous silicon for use in thin film transistor
09/22/2005WO2005088688A1 Substrate processing apparatus and method for manufacturing semiconductor device
09/22/2005WO2005087983A2 Alternative methods for fabrication of substrates and heterostructures made of silicon compounds and alloys
09/22/2005WO2005047574A3 Heteroepitaxial layer and method for the production thereof
09/22/2005US20050208740 Process for deposition of semiconductor films
09/22/2005US20050208687 Method of Manufacturing Single-Crystal GaN Substrate, and Single-Crystal GaN Substrate
09/22/2005US20050206018 gas driers, rotating coaters, vacuum treatment apparatus, heat treatment apparatus, charged particle flow irradiating apparatus, plasma treatment apparatus, electrostatic absorbers, interatomic force microscope, X-ray irradiating apparatus and cleaners
09/22/2005US20050205873 Method for making compound semiconductor and method for making semiconductor device
09/22/2005US20050205871 Lithographic methods to reduce stacking fault nucleation sites and structures having reduced stacking fault nucleation sites
09/22/2005US20050205010 In situ growth of oxide and silicon layers
09/21/2005EP1577933A2 Method of manufacturing single-crystal GaN substrate, and single-crystal GaN substrate
09/21/2005EP1577425A1 LOW-RESISTANCE n TYPE SEMICONDUCTOR DIAMOND AND PROCESS FOR PRODUCING THE SAME
09/21/2005EP1576671A1 Growth of planar, non-polar a-plane gallium nitride by hydride vapor phase epitaxy
09/21/2005EP1576210A1 A substrate for epitaxy and a method of preparing the same
09/21/2005CN1671882A 原子层沉积方法 Atomic layer deposition method
09/21/2005CN1670918A Method of manufacturing single-crystal GaN substrate, and single-crystal GaN substrate
09/21/2005CN1670917A Method for making compound semiconductor and method for making semiconductor device
09/21/2005CN1670916A Group III nitride crystal substrate, method of its manufacture, and group-III nitride semiconductor device
09/21/2005CN1670270A Nanometer material growth controllable vacuum tube type reacting equipment
09/21/2005CN1669920A Method for preparing one-dimensional nanostructure in anode alumina template
09/20/2005US6946373 Relaxed, low-defect SGOI for strained Si CMOS applications
09/20/2005US6946370 Semiconductor crystal producing method
09/20/2005US6946369 Method for forming, by CVD, nanostructures of semi-conductor material of homogenous and controlled size on dielectric material
09/20/2005US6946317 Method of fabricating heteroepitaxial microstructures
09/20/2005US6946308 Method of manufacturing III-V group compound semiconductor
09/15/2005WO2005021842A3 High-purity crystal growth
09/15/2005WO2005017938B1 Method and apparatus for bi-planar backward wave oscillator
09/15/2005WO2004102619A3 Chemical vapor deposition epitaxial growth
09/15/2005US20050202684 Method of manufacturing inorganic nanotube
09/15/2005US20050202682 Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device
09/15/2005US20050202665 Method of fabricating n-type semiconductor diamond, and semiconductor diamond
09/15/2005US20050199182 Apparatus for the preparation of film
09/15/2005DE10393690T5 III-V Halbleiter und Verfahren zur seiner Herstellung III-V semiconductors and methods for its preparation
09/15/2005DE102004009772A1 CVD-Reaktor mit Prozesskammerhöhenstabilisierung CVD reactor process chamber height stabilization
09/15/2005DE102004009130A1 Einlasssystem für einen MOCVD-Reaktor An intake system for an MOCVD reactor
09/14/2005CN1668786A Silicon wafer for epitaxial growth, epitaxial wafer, and its manufacturing method
09/14/2005CN1219314C Semiconductor substrate made from group-III nitride and manufacturing technique thereof
09/09/2005WO2005083153A1 Cvd-reactor with stabilized process chamber height
09/08/2005US20050195941 Diffractometer
09/08/2005US20050193952 Substrate support system for reduced autodoping and backside deposition
09/08/2005US20050193949 Method for manufacturing integrated circuits and corresponding device
09/08/2005DE102004008065A1 Verfahren zur Integration von kolloidal erzeugten Nanopartikeln in epitaktischen Schichten Method for the integration of colloidal nanoparticles generated in epitaxial layers
09/07/2005EP1571441A1 Monitoring epitaxial growth in situ by means of an angle dispersive X-ray diffractometer
09/07/2005EP1570108A1 Susceptor system
09/07/2005EP1570107A1 Susceptor system
09/07/2005CN1666319A Group III nitride semiconductor substrate and its manufacturing method
09/07/2005CN1665969A Porous substrate and its manufacturing method, and GaN semiconductor multilayer substrate and its manufacturing method
09/07/2005CN1665718A Chemical mix and delivery systems and methods thereof
09/07/2005CN1218363C Crystal silicon semiconductor device and its mfg. method
09/06/2005US6940143 Semiconductor thin-film manufacturing method, semiconductor device manufacturing method, semiconductor device, integrated circuit, electro-optical device, and electronic appliance
09/06/2005US6940103 Nitride semiconductor growth method, nitride semiconductor substrate and nitride semiconductor device
09/06/2005US6940098 Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method
09/06/2005US6939733 Group III nitride compound semiconductor device and method of producing the same
09/06/2005US6939731 Production method for light emitting element
09/06/2005US6939730 Nitride semiconductor, semiconductor device, and method of manufacturing the same
09/06/2005US6939723 Method of forming haze-free BST films
09/06/2005CA2261769C Catio3 interfacial template structure on superconductor
09/01/2005WO2005081298A1 Epitaxially growing equipment
09/01/2005WO2005081283A2 Substrate support system for reduced autodoping and backside deposition
09/01/2005WO2005080631A1 Inlet system for an mocvd reactor
09/01/2005US20050191773 Nitride III-V compound semiconductor substrate, its manufacturing method, manufacturing method of a semiconductor light emitting device, and manufacturing method of a semiconductor device
09/01/2005US20050189544 Methods of forming a high conductivity diamond film and structures formed thereby
09/01/2005DE10393222T5 Nadelförmiger Siliziumkristall und Verfahren für seine Erzeugung Needle-shaped crystal silicon and method for its production
09/01/2005CA2556066A1 Vapor phase growth apparatus
08/2005
08/31/2005EP1569269A1 Epitaxial growing method and substrate for epitaxial growth
08/31/2005EP1569264A1 Method for producing silicon epitaxial wafer
08/31/2005EP1568068A1 Backside heating chamber for emissivity independent thermal processes
08/31/2005EP1567531A2 Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride
08/31/2005EP1036863B1 Method for synthesizing n-type diamond having low resistance
08/31/2005EP1034325B1 Gallium nitride epitaxial layer
08/31/2005CN1662681A N-type semiconductor diamond producing method and semiconductor diamond
08/31/2005CN1662448A Process for manufacturing a gallium rich gallium nitride film
08/31/2005CN1662298A Method for carrying out homogeneous and heterogeneous chemical reactions using plasma
08/31/2005CN1661869A Method for making semiconductor substrate
08/31/2005CN1217392C Method and apparatus for forming epitaxial silicon wafer with denuded zone
08/31/2005CN1217381C Method for making substrate in particular for optics, electronics or optoelectronics and resulting substrate
08/31/2005CN1217036C Method for preparing crystalline alkaline earth metal oxide on silicon substrate
08/30/2005US6936490 Semiconductor wafer and its manufacturing method
08/30/2005US6936357 Bulk GaN and ALGaN single crystals
08/30/2005US6936188 comprising at zinc and oxygen as constituent elements, applied for light emitting in the region of blue and near ultraviolet.
08/30/2005US6936103 Low indium content quantum well structures
08/30/2005US6936086 High conductivity particle filter
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