Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
11/2005
11/16/2005CN1696358A Method of manufacturing nano-wire
11/16/2005CN1227754C Fractal structure and method of forming it
11/16/2005CN1227718C Method for making gallium nitride or aluminium nitride crystal
11/15/2005US6964914 Method of manufacturing a free-standing substrate made of monocrystalline semi-conductor material
11/15/2005US6964876 Method and device for depositing layers
11/15/2005US6964705 Method for producing semiconductor crystal
11/10/2005WO2005106984A1 Method for fabricating semiconductor epitaxial layers using metal islands
11/10/2005WO2005004197A3 Fluidic nanotubes and devices
11/10/2005US20050250302 Thin films and methods of making them
11/10/2005US20050250298 In situ doped epitaxial films
11/10/2005US20050249876 Film forming apparatus and method
11/10/2005US20050247260 Non-polar single crystalline a-plane nitride semiconductor wafer and preparation thereof
11/10/2005DE102004019690A1 B-terminated surface fabrication on perovskite single crystals contacts crystal with fluid and irradiates with light of specified electron transition energy
11/09/2005EP1593760A1 Non-polar single crystalline A-plane nitride semiconductor wafer and preparation thereof
11/09/2005EP1593755A1 Film forming apparatus and method
11/09/2005CN1695228A Backside heating chamber for emissivity independent thermal processes
11/09/2005CN1695225A Method of removing an amorphous oxide from a monocrystalline surface
11/08/2005US6962859 Thin films and method of making them
11/03/2005US20050245095 Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy
11/03/2005US20050245058 Method for producing high throughput strained-si channel mosfets
11/03/2005US20050244997 Bulk GaN and AIGaN single crystals
11/03/2005US20050244324 Acicular silicon crystal and process for producing the same
11/03/2005US20050242340 Strained silicon NMOS devices with embedded source/drain
11/03/2005US20050241581 Chemical vapor deposition apparatuses and deposition methods
11/03/2005US20050241571 Method of growing nitride single crystal on silicon substrate, nitride semiconductor light emitting device using the same, method of manufacturing the same
11/02/2005EP1592044A1 Gas driven planetary rotation apparatus and methods of using the same
11/02/2005EP1592043A2 Device for measuring pressure for vacuum systems
11/02/2005EP1591565A1 Diamond single crystal substrate
11/02/2005CN1692186A Low-resistance n type semiconductor diamond and process for producing the same
11/02/2005CN1691283A Method of growing nitride single crystal, nitride semiconductor light emitting device, method of manufacturing the same
11/01/2005US6960490 Method and resulting structure for manufacturing semiconductor substrates
11/01/2005US6960255 Framework assisted crystal growth
10/2005
10/27/2005US20050239271 Heteroepitaxial growth method for gallium nitride
10/27/2005US20050239255 Formation of lattice-tuning semiconductor substrates
10/27/2005US20050235905 Atomic layer deposition of hafnium-based high-k dielectric
10/27/2005US20050235904 Method of manufacturing nano-wire
10/26/2005EP1588406A2 Semiconductor structures with structural homogeneity
10/26/2005EP1587970A2 Tunable cvd diamond structures
10/26/2005CN1225032C Semiconductor device made of Group III nitrogenous compounds and manufacture thereof
10/25/2005US6958900 Multi-layered unit including electrode and dielectric layer
10/25/2005US6958286 Method of preventing surface roughening during hydrogen prebake of SiGe substrates
10/25/2005US6958254 Method to produce germanium layers
10/25/2005US6958253 Process for deposition of semiconductor films
10/25/2005US6958093 Free-standing (Al, Ga, In)N and parting method for forming same
10/25/2005US6958092 Epitaxial silicon wafer with intrinsic gettering and a method for the preparation thereof
10/20/2005WO2005098097A1 Manufacture of cadmium mercury telluride
10/20/2005US20050233529 Integration of high k gate dielectric
10/20/2005US20050233263 Growth of carbon nanotubes at low temperature
10/20/2005US20050230672 III-V compound semiconductor crystals
10/20/2005US20050229855 Apparatus for thermal treatment of substrates
10/20/2005US20050229837 Method of altering the properties of a thin film and substrate implementing said method
10/20/2005CA2561648A1 Manufacture of cadmium mercury telluride
10/19/2005EP1586681A1 Titanium oxide grain, process and apparatus for producing the same, and method of treating with the titanium oxide
10/19/2005CN1685090A Ⅲ－v化合物半导体晶体 Ⅲ-v compound semiconductor crystals
10/19/2005CN1685089A Method and apparatus for forming epitaxial layers
10/19/2005CN1223709C Modified base for use in chemical vapor deposition process
10/18/2005US6955985 Domain epitaxy for thin film growth
10/18/2005US6955858 Transition metal doped ferromagnetic III-V nitride material films and methods of fabricating the same
10/18/2005US6955719 Manufacturing methods for semiconductor devices with multiple III-V material layers
10/13/2005WO2005096356A1 Susceptor
10/13/2005WO2005095263A2 Methods of forming alpha and beta tantalum films with controlled and new microstructures
10/13/2005US20050227472 Group III-V Crystal and Manufacturing method thereof
10/13/2005US20050227458 Method for producing structured substrate, structured substrate, method for producing semiconductor light emitting device, semiconductor light emitting device, method for producing semiconductor device, semiconductor device, method for producing device, and device
10/13/2005US20050227457 Method of forming silicon-based thin film, silicon-based thin film, and photovoltaic element
10/13/2005US20050227453 Group III nitride semiconductor crystal, production method thereof and group III nitride semiconductor epitaxial wafer
10/13/2005US20050227392 Method of manufacturing a semiconductor light emitting device, semiconductor light emitting device, method of manufacturing a semiconductor device, semiconductor device, method of manufacturing a device, and device
10/13/2005US20050227020 Method for carrying out homogeneous and heterogeneous chemical reactions using plasma
10/13/2005US20050224825 Production method for light emitting element
10/13/2005US20050223994 Substrate susceptors for receiving semiconductor substrates to be deposited upon and methods of depositing materials over semiconductor substrates
10/13/2005US20050223985 Deposition apparatuses, methods of assessing the temperature of semiconductor wafer substrates within deposition apparatuses, and methods for deposition of epitaxial semiconductive material
10/13/2005US20050223969 Substrate having a zinc oxide nanowire array normal to its surface and fabrication method thereof
10/13/2005US20050223968 Patterned atomic layer epitaxy
10/13/2005US20050223967 Powder metallurgy crucible for aluminum nitride crystal growth
10/13/2005CA2567032A1 Methods of forming alpha and beta tantalum films with controlled and new microstructures
10/13/2005CA2558591A1 Susceptor
10/12/2005EP1583858A2 Sacrificial template method of fabricating a nanotube
10/12/2005CN1681977A Acicular silicon crystal and process for producing the same
10/12/2005CN1681976A 单晶金刚石 Single crystal diamond
10/12/2005CN1681975A Nanostructures and methods for manufacturing the same
10/12/2005CN1681088A Coaxial air intake for acquiring uniform wide-band gap semiconductor thin film
10/06/2005WO2005093795A1 Lithographic methods to reduce stacking fault nucleation sites and structures having reduced stacking fault nucleation sites
10/06/2005WO2005093137A1 Reduction of carrot defects in silicon carbide epitaxy
10/06/2005WO2005093136A1 Support and method for processing semiconductor substrate
10/06/2005WO2005068395A3 High purity silicon carbide articles and methods
10/06/2005WO2005010964A3 Silicon crystallization using self-assembled monolayers
10/06/2005US20050221592 Method of growing III-V compound semiconductor layer, substrate product, and semiconductor device
10/06/2005US20050221515 Method for producing semiconductor light emitting device, method for producing semiconductor device, method for producing device, method for growing nitride type III-V group compound semiconductor layer, method for growing semiconductor layer, and method for growing layer
10/06/2005US20050220694 Method for producing nitrides
10/06/2005US20050217578 Reactor having a movable shutter
10/06/2005US20050217569 Methods of depositing an elemental silicon-comprising material over a semiconductor substrate and methods of cleaning an internal wall of a chamber
10/06/2005US20050217568 Deposition of buffer layers on textured metal surfaces
10/06/2005US20050217567 Covering assembly for crucible used for evaporation of raw materials
10/06/2005US20050217564 Vapor phase epitaxy device
10/06/2005US20050217561 Low-resistance n type semiconductor diamond and process for producing the same
10/06/2005US20050217560 Semiconductor wafers with non-standard crystal orientations and methods of manufacturing the same
10/06/2005CA2555431A1 Reduction of carrot defects in silicon carbide epitaxy
10/06/2005CA2554408A1 Lithographic methods to reduce stacking fault nucleation sites and structures having reduced stacking fault nucleation sites
10/05/2005EP1581676A1 High-speed diamond growth using a microwave plasma in pulsed mode
10/05/2005EP1581675A1 A template type substrate and a method of preparing the same
10/05/2005EP1581667A1 Support system for a treatment apparatus
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