| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 01/12/2006 | US20060009012 Methods of fabricating semiconductor heterostructures |
| 01/12/2006 | US20060006500 III-nitride materials including low dislocation densities and methods associated with the same |
| 01/11/2006 | EP1615259A1 Susceptor and vapor growth device |
| 01/11/2006 | EP1614775A2 Method of improving surface flatness of group-III nitride crystal, substrate for epitaxial growth, and semiconductor device |
| 01/11/2006 | EP1614166A2 Fluidic nanotubes and devices |
| 01/11/2006 | EP1613792A2 Methods and apparatus for atomic layer deposition |
| 01/11/2006 | EP1249521B1 SiC SINGLE CRYSTAL AND METHOD FOR GROWING THE SAME |
| 01/10/2006 | US6983620 are located in a process chamber of a chemical vapor deposition (CVD) reactor on substrate holders carried on dynamic gas cushions by a substrate holder carrier |
| 01/05/2006 | WO2006000644A1 Selective doping of a material |
| 01/05/2006 | WO2005108643A8 Method and device for the low-temperature epitaxy on a plurality of semiconductor substrates |
| 01/05/2006 | US20060003584 Nickel-silicon compound forming method, semiconductor device manufacturing method, and semiconductor device |
| 01/05/2006 | CA2574771A1 Selective doping of a material |
| 01/05/2006 | CA2568002A1 Method for doping material and doped material |
| 01/04/2006 | EP1611602A1 Method for epitaxial deposition of an n-doped silicon layer |
| 01/04/2006 | EP1034325B9 Gallium nitride epitaxial layer |
| 01/04/2006 | CN1717782A Vaporizer for CVD, solution voporizing CVD device and voporization method for CVD |
| 01/04/2006 | CN1717780A 3-5 group compound semiconductor and method for preparation thereof |
| 01/04/2006 | CN1234909C Method for forming film by using atomic layer deposition method |
| 01/03/2006 | US6982208 Method for producing high throughput strained-Si channel MOSFETS |
| 01/03/2006 | US6981465 Chemical vapor deposition process and apparatus thereof |
| 12/29/2005 | WO2005050709A3 LARGE AREA, UNIFORMLY LOW DISLOCATION DENSITY GaN SUBSTRATE AND PROCESS FOR MAKING THE SAME |
| 12/29/2005 | WO2005034196A3 Atomic layer deposition of hafnium-based high-k dielectric |
| 12/29/2005 | US20050287774 Method of improving surface flatness of group-III nitride crystal, substrate for epitaxial growth, and semiconductor device |
| 12/29/2005 | US20050287770 Alternative methods for fabrication of substrates and heterostructures made of silicon compounds and alloys |
| 12/29/2005 | US20050284360 Atomic layer deposition using electron bombardment |
| 12/29/2005 | DE10393964T5 Diamantbeschichtetes Silizium und Herstellungsverfahren dafür A diamond-coated silicon and production method thereof |
| 12/28/2005 | EP1608799A1 Formation of thin semiconductor layers by low-energy plasma enhanced chemical vapor deposition and semiconductor heterostructure devices |
| 12/28/2005 | EP1608794A1 Method for depositing compounds on a substrate by means of metalorganic chemical vapor deposition |
| 12/28/2005 | EP1476898B1 Method for production of a layer of silicon carbide or a nitride of a group iii element on a suitable substrate |
| 12/28/2005 | EP1456871A4 Susceptor for epitaxial growth and epitaxial growth method |
| 12/28/2005 | CN1714169A Support system for a treatment apparatus |
| 12/27/2005 | US6979489 Zinc oxide nanotip and fabricating method thereof |
| 12/22/2005 | WO2005122267A2 Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy |
| 12/22/2005 | WO2005121417A1 Support system for treatment apparatuses |
| 12/22/2005 | WO2005121414A1 Deposition of buffer layers on textured metal surfaces |
| 12/21/2005 | EP1607498A1 Method for forming oxide coating film, oxide coating film and coating film structure |
| 12/21/2005 | CN1711648A Nanostructure, electronic device having such nanostructure and method of preparing nanostructure |
| 12/15/2005 | WO2005019491A3 Thermal cvd synthesis of nanostructures |
| 12/15/2005 | US20050277278 Method of manufacturing a wafer |
| 12/15/2005 | US20050274976 III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor wafer |
| 12/15/2005 | US20050274975 III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor wafer |
| 12/15/2005 | DE102004024207A1 Verfahren und Vorrichtung zur Niedertemperaturepitaxie auf einer Vielzahl von Halbleitersubstraten Method and apparatus for Niedertemperaturepitaxie on a plurality of semiconductor substrates |
| 12/14/2005 | EP1605498A1 A method of manufacturing a semiconductor wafer |
| 12/14/2005 | EP1604395A2 Epitaxial semiconductor deposition methods and structures |
| 12/14/2005 | EP1604391A1 Method of producing high quality relaxed silicon germanium layers |
| 12/14/2005 | EP0896643B1 Method and apparatus for growing oriented whisker arrays |
| 12/14/2005 | CN1708836A Epitaxial growing method and substrate for epitaxial growth |
| 12/14/2005 | CN1708608A Method for forming thin film on basic material through intermediate layer |
| 12/14/2005 | CN1708607A Single crystal base thin film |
| 12/14/2005 | CN1708602A Susceptor system |
| 12/14/2005 | CN1708601A Susceptor system |
| 12/13/2005 | US6974766 In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application |
| 12/08/2005 | WO2005116307A1 Process for producing wafer of silicon carbide single-crystal |
| 12/08/2005 | WO2005116306A1 Nanocrystal diamond film, process for producing the same and apparatus using nanocrystal diamond film |
| 12/08/2005 | WO2005116304A2 In situ doped epitaxial films |
| 12/08/2005 | WO2005074451A3 Technique for perfecting the active regions of wide bandgap semiconductor nitride devices |
| 12/08/2005 | WO2005055247A3 Methods for surface-biaxially-texturing amorphous films |
| 12/08/2005 | US20050269021 Forming separation layer on base having single crystal or textured surface, buffer layer, metal oxide layer, and removing separation layer; for multilayer superconductive tapes, ferroelectric multilayer thin films, and optoelectronic devices |
| 12/08/2005 | US20050268848 Atomic layer deposition apparatus and process |
| 12/08/2005 | DE10164603B4 Verfahren zur Erzeugung einer Eisennitriddünnschicht und Eisennitriddünnschicht Method for producing a Eisennitriddünnschicht and Eisennitriddünnschicht |
| 12/07/2005 | EP1602131A1 Via and trench structures for semiconductor substrates bonded to metallic substrates |
| 12/07/2005 | EP1601807A2 Free-standing diamond structures and methods |
| 12/07/2005 | CN1706030A Substrate for nitride semiconductor growth |
| 12/07/2005 | CN1705775A Optical quality diamond material |
| 12/07/2005 | CN1704507A Method for growing high crystal quality indium nitride single-crystal epitaxial film |
| 12/07/2005 | CN1704506A Method for growing high-mobility gallium nitride epitaxial film |
| 12/07/2005 | CN1704505A Method for growing high-resistance gallium nitride epitaxial film |
| 12/06/2005 | US6972206 Nitride semiconductor, semiconductor device, and method of manufacturing the same |
| 12/06/2005 | US6972050 Method for depositing in particular crystalline layers, and device for carrying out the method |
| 12/06/2005 | US6972049 Method for fabricating a diamond film having low surface roughness |
| 12/06/2005 | US6971835 Vapor-phase epitaxial growth method |
| 12/01/2005 | US20050266626 Method of fabricating heteroepitaxial microstructures |
| 12/01/2005 | US20050263754 Substrates for growth of chemical compound semiconductors, chemical compound semiconductors using the substrates and processes for producing thereof |
| 12/01/2005 | US20050263753 Semiconductor substrate layer configured for inducement of compressive or expansive force |
| 12/01/2005 | US20050263065 Vapor assisted growth of gallium nitride |
| 12/01/2005 | DE4310941B4 Vacuum treatment chamber - with a low voltage discharge with arcing on treatment chamber walls prevented |
| 11/30/2005 | EP1601009A1 Nitride semiconductor device and method for manufacturing same |
| 11/30/2005 | EP1599621A1 Cvd diamond in wear applications |
| 11/30/2005 | EP1290251B1 Thick single crystal diamond layer method for making it and gemstones produced from the layer |
| 11/30/2005 | CN1702836A Non-polar single crystalline A-plane nitride semiconductor wafer and preparation thereof |
| 11/29/2005 | US6970644 Heating configuration for use in thermal processing chambers |
| 11/29/2005 | US6969426 Forming improved metal nitrides |
| 11/24/2005 | WO2005112078A1 METHOD FOR MATERIAL GROWTH OF GaN-BASED NITRIDE LAYER |
| 11/24/2005 | WO2005111277A1 Method of growing sic single crystal and sic single crystal grown by same |
| 11/24/2005 | US20050260781 Method for manufacturing gallium nitride compound semiconductor |
| 11/24/2005 | US20050257733 III nitride crystal and method for producing same |
| 11/23/2005 | CN1701417A Substrate-processing apparatus and method of producing semiconductor device |
| 11/23/2005 | CN1701415A III nitride crystal and method for producing same |
| 11/23/2005 | CN1699637A Apparatus for growth of monocrystal semiconductor nano wire and use thereof |
| 11/23/2005 | CN1228478C Method for preparing gallium nitride single crystal film |
| 11/22/2005 | US6967359 Nitride semiconductor substrate production method thereof and semiconductor optical device using the same |
| 11/22/2005 | US6966948 Method to manufacture Indium Nitride quantum dots |
| 11/17/2005 | WO2005109478A1 P-type group iii nitride semiconductor and production method thereof |
| 11/17/2005 | WO2005108643A1 Method and device for the low-temperature epitaxy on a plurality of semiconductor substrates |
| 11/17/2005 | WO2005078167A3 Directionally controlled growth of nanowhiskers |
| 11/17/2005 | US20050255672 Method and resulting structure for manufacturing semiconductor substrates |
| 11/17/2005 | US20050252443 Epitaxy layer and method of forming the same |
| 11/16/2005 | EP1595979A1 Substrate for forming magnetic garnet single-crystal film, process for producing the same, optical device and process for producing the same |
| 11/16/2005 | CN1698184A Nitride semiconductor device and method for manufacturing same |
| 11/16/2005 | CN1697895A III-v compound semiconductor crystal and method for production thereof |