| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 03/09/2006 | US20060048700 Method for achieving device-quality, lattice-mismatched, heteroepitaxial active layers |
| 03/08/2006 | EP1632591A1 Silicon epitaxial wafer, and silicon epitaxial wafer producing method |
| 03/08/2006 | EP1632590A2 Thick single crystal diamond layer method for making it and gemstones produced from the layer |
| 03/08/2006 | EP1631986A1 A method of preparation of an epitaxial substrate |
| 03/08/2006 | EP1631703A1 Electromagnetic rotation of platter |
| 03/08/2006 | EP1130137B1 Material for raising single crystal sic and method of preparing single crystal sic |
| 03/07/2006 | US7008906 Oxide high-critical temperature superconductor acicular crystal and its production method |
| 03/07/2006 | US7008881 Method for forming silicon epitaxial layer |
| 03/07/2006 | US7008864 Method of depositing high-quality SiGe on SiGe substrates |
| 03/07/2006 | US7007822 Chemical mix and delivery systems and methods thereof |
| 03/02/2006 | WO2005065143A3 Isotopically pure silicon-on-insulator wafers and method of making same |
| 03/02/2006 | US20060046511 Porous substrate and its manufacturing method, and gan semiconductor multilayer substrate and its manufacturing method |
| 03/02/2006 | US20060046325 Group III nitride semiconductor substrate and its manufacturing method |
| 03/02/2006 | US20060042542 Method of producing silicon-germanium-on-insulator material using unstrained Ge-containing source layers |
| 03/02/2006 | US20060042541 Method for preparation of ferroelectric single crystal film structure using deposition method |
| 03/01/2006 | EP1630878A2 GaN semiconductor substrate and semiconductor device manufactured by epitaxial growth on the GaN semiconductor substrate |
| 03/01/2006 | EP1630261A2 Substrate holder for a vapour deposition system |
| 03/01/2006 | EP1630260A2 Magnetic latch for a vapour deposition system |
| 03/01/2006 | CN1741258A Process for growing high crystalline quality zinc oxide thin film on silicon substrate under low temperature |
| 03/01/2006 | CN1740406A Nanometer silicon wire structure and its growth process |
| 03/01/2006 | CN1243856C Vacuum system for the growth of semiconductor substrate crystalline material |
| 03/01/2006 | CN1243855C Single crystal diamond prepared by CVD |
| 02/28/2006 | US7005391 Method of manufacturing inorganic nanotube |
| 02/23/2006 | WO2006018101A1 Method for production of reactors for the decomposition of gases |
| 02/23/2006 | US20060040477 Method and apparatus for forming expitaxial layers |
| 02/23/2006 | DE102005038873A1 Vielkammer-MOCVD-Aufwachsvorrichtung für hohe Geschwindigkeit/ hohen Durchsatz Multi-chamber MOCVD growth apparatus for high speed / high throughput |
| 02/22/2006 | EP1627940A1 Method for producing single crystal of multi- element oxide single crystal containing bismuth as constituting element |
| 02/22/2006 | CN2760057Y Vacuum tube type reaction unit for controllable growth of nano material |
| 02/22/2006 | CN1243136C Deposition method of seed-crystal-free and bias-less diamond quasi-monocrystal film |
| 02/21/2006 | US7001791 GaN growth on Si using ZnO buffer layer |
| 02/21/2006 | US7001460 Semiconductor element and its manufacturing method |
| 02/21/2006 | US7001459 Spinel-structured metal oxide on a substrate and method of making same by molecular beam epitaxy |
| 02/21/2006 | US7000636 Valve assemblies for use with a reactive precursor in semiconductor processing |
| 02/16/2006 | WO2006016739A1 Method of fabricating strained thin film semiconductor layer |
| 02/16/2006 | WO2005048297A3 Nanostructures including a metal |
| 02/16/2006 | US20060035438 Method and resulting structure for manufacturing semiconductor substrates |
| 02/16/2006 | US20060035035 Film forming method and film forming apparatus |
| 02/16/2006 | US20060032848 Process and system for heating semiconductor substrates in a processing chamber containing a susceptor |
| 02/16/2006 | US20060032433 Rapid X-ray diffraction method for structural analysis of a nano material on a surface or at an interface and for structural analysis of a solid/liquid interface, and apparatus used for the method |
| 02/16/2006 | US20060032432 Bulk single crystal gallium nitride and method of making same |
| 02/15/2006 | EP1625612A2 Manufacturing gallium nitride substrates by lateral overgrowth through masks and devices fabricated thereof |
| 02/15/2006 | CN2758969Y Flat electrode structure |
| 02/15/2006 | CN1734718A Compound semiconductor substrate and its production method |
| 02/09/2006 | WO2006015185A2 GaInP/GaAs/Si TRIPLE JUNCTION SOLAR CELL ENABLED BY WAFER BONDING AND LAYER TRANSFER |
| 02/09/2006 | WO2006014472A1 Iii-nitride materials including low dislocation densities and methods associated with the same |
| 02/09/2006 | WO2006013344A1 Manufacture of cadmium mercury telluride on patterned silicon |
| 02/09/2006 | US20060030133 Relaxed, low-defect SGOI for strained Si CMOS applications |
| 02/09/2006 | US20060029832 High surface quality GaN wafer and method of fabricating same |
| 02/09/2006 | US20060029792 Process for manufacturing self-assembled nanoparticles |
| 02/09/2006 | US20060027162 Crystallization apparatus, crystallization method, and phase modulation device |
| 02/09/2006 | US20060027161 Method for heat-treating silicon wafer and silicon wafer |
| 02/09/2006 | DE102004034667A1 Producing synthetic diamond particles comprises exposing hydrogen and fluidized carbon seed particles to an energy source |
| 02/09/2006 | CA2569832A1 Manufacture of cadmium mercury telluride on patterned silicon |
| 02/08/2006 | EP1624095A2 Nitride semiconductor single-crystal substrate and method of its synthesis |
| 02/08/2006 | EP1623454A2 Reactor surface passivation through chemical deactivation |
| 02/08/2006 | CN1731561A Method for preparing Poly-SiGe film |
| 02/07/2006 | US6995396 Semiconductor substrate, semiconductor device and method for fabricating the same |
| 02/07/2006 | US6995077 Epitaxially coated semiconductor wafer and process for producing it |
| 02/07/2006 | US6994751 Nitride-based semiconductor element and method of forming nitride-based semiconductor |
| 02/07/2006 | US6994750 Film evaluating method, temperature measuring method, and semiconductor device manufacturing method |
| 02/02/2006 | WO2005007937A3 Annealing single crystal chemical vapor deposition diamonds |
| 02/02/2006 | WO2005007935A3 Tough diamonds and method of making thereof |
| 02/02/2006 | US20060022308 Group III-V compound semiconductor and method for producing the same |
| 02/02/2006 | US20060022191 Nanostructure, electronic device having such nanostructure and method of preparing nanostructures |
| 02/02/2006 | US20060021565 GaInP / GaAs / Si triple junction solar cell enabled by wafer bonding and layer transfer |
| 02/02/2006 | US20060021564 Nanostructures produced by phase-separation during growth of (iii-v )1-x(iv2)x alloys |
| 02/01/2006 | EP1620583A1 Semiconductor substrate, semiconductor device, light emitting diode and producing method therefor |
| 02/01/2006 | EP1620294A2 Chemical vapor deposition epitaxial growth |
| 02/01/2006 | EP1290251B8 Thick single crystal diamond layer method for making it and gemstones produced from the layer |
| 02/01/2006 | CN1729317A Method for forming carbon nanotubes |
| 02/01/2006 | CN1727524A Method for preparing needle shaped Nano ZnO line under low temperature without catalyst |
| 01/31/2006 | US6992321 Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials |
| 01/31/2006 | US6991959 Method of manufacturing silicon carbide film |
| 01/26/2006 | WO2004081987A3 Sige rectification process |
| 01/26/2006 | US20060019470 Directionally controlled growth of nanowhiskers |
| 01/26/2006 | US20060016388 Domain epitaxy for thin film growth |
| 01/26/2006 | US20060016387 Silicon wafer, its manufacturing method, and its manufacturing apparatus |
| 01/25/2006 | EP1619276A2 Homoepitaxial growth of SiC on low off-axis SiC wafers |
| 01/25/2006 | CN1725444A Epitaxial growing lanthanum aluminate film material on silicon substrate and preparation method |
| 01/25/2006 | CN1238576C Baseless reactor for growing epitaxial layers by chemical vapor deposition |
| 01/24/2006 | US6990156 Frequency offset estimation for communication systems method and device for inter symbol interference |
| 01/24/2006 | US6989287 Method for producing nitride semiconductor, semiconductor wafer and semiconductor device |
| 01/24/2006 | US6989202 comprises sapphire single crystal substrate and contoured/flat underfilm; usable for semiconductor films constituting light-emitting diode or high velocity integrated circuit chip |
| 01/24/2006 | US6989058 Use of thin SOI to inhibit relaxation of SiGe layers |
| 01/19/2006 | WO2006007156A1 Fabrication of crystalline materials over substrates |
| 01/19/2006 | WO2006005637A1 Method for the deposition of layers containing silicon and germanium |
| 01/19/2006 | US20060012010 Epitaxial growing method and substrate for epitaxial growth |
| 01/19/2006 | US20060011131 SiC material, semiconductor device fabricating system and SiC material forming method |
| 01/19/2006 | US20060011130 Methods of growing epitaxial silicon |
| 01/19/2006 | US20060011129 Method for fabricating a compound semiconductor epitaxial wafer |
| 01/19/2006 | US20060011128 Homoepitaxial growth of SiC on low off-axis SiC wafers |
| 01/18/2006 | CN1723303A A substrate for epitaxy and a method of preparing the same |
| 01/18/2006 | CN1723302A A substrate for epitaxy and a method of preparing the same |
| 01/18/2006 | CN1722367A A method of manufacturing a semiconductor wafer |
| 01/18/2006 | CN1237577C Method for producing gallium nitride film semiconductor and colligation production method |
| 01/18/2006 | CN1237575C Method for producing Si1 Ge film on silicon substrate |
| 01/17/2006 | US6987072 Method of producing semiconductor crystal |
| 01/17/2006 | US6986955 Electronic and optical materials |
| 01/12/2006 | WO2006003381A1 Deposition technique for producing high quality compound semiconductor materials |
| 01/12/2006 | US20060009362 Single crystalline base thin film |