| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 04/25/2006 | US7033439 Apparatus for fabricating a III-V nitride film and a method for fabricating the same |
| 04/25/2006 | US7033438 Growth of a single-crystal region of a III-V compound on a single-crystal silicon substrate |
| 04/25/2006 | US7033437 Method for making semiconductor device including band-engineered superlattice |
| 04/25/2006 | US7033436 Crystal growth method for nitride semiconductor and formation method for semiconductor device |
| 04/25/2006 | US7033435 Process for preparing p-n junctions having a p-type ZnO film |
| 04/25/2006 | US7033434 Mask for crystallizing, method of crystallizing amorphous silicon and method of manufacturing array substrate using the same |
| 04/20/2006 | US20060081187 Susceptor system |
| 04/20/2006 | DE102005048680A1 Trimethylgallium, Verfahren zur Herstellung desselben und aus dem Trimethylgallium gezüchteter Galliumnitriddünnfilm Trimethylgallium, method for producing the same and bred from the trimethylgallium Galliumnitriddünnfilm |
| 04/19/2006 | EP0954948A4 Model based temperature controller for semiconductor thermal processors |
| 04/18/2006 | US7030037 Atomic layer deposition apparatus and method |
| 04/18/2006 | US7029977 Fabrication method of semiconductor wafer |
| 04/18/2006 | US7029940 Ammonia for use in manufacture of GaN-type compound semiconductor and method for manufacturing GaN-type compound semiconductor |
| 04/18/2006 | US7029928 Real-time detection mechanism with self-calibrated steps for the hardware baseline to detect the malfunction of liquid vaporization system in AMAT TEOS-based Dxz chamber |
| 04/13/2006 | WO2006039715A1 Semiconductor devices having bonded interfaces and methods for making the same |
| 04/13/2006 | WO2006039065A2 Method of growing group iii nitride crystals |
| 04/13/2006 | US20060079090 Method for depositing nanolaminate thin films on sensitive surfaces |
| 04/13/2006 | US20060079073 Fabrication method of nitride semiconductors and nitride semiconductor structure fabricated thereby |
| 04/13/2006 | US20060076559 Method of fabricating an epitaxially grown layer |
| 04/13/2006 | US20060075959 Trimethylgallium, a method for producing the same and a gallium nitride thin film grown from the trimethylgallium |
| 04/13/2006 | US20060075958 Low basal plane dislocation bulk grown SiC wafers |
| 04/13/2006 | US20060075957 Annealed wafer and anneald wafer manufacturing method |
| 04/13/2006 | DE10125929B4 Verfahren zur Herstellung eines Nb3Al-supraleitenden Mehrfaserdrahtes A method for producing a Nb3Al superconducting multifilamentary wire |
| 04/13/2006 | DE10048203B4 Verbundwerkstoff und Verfahren zu seiner Herstellung Composite material and process for its preparation |
| 04/12/2006 | EP1646077A1 Nitride semiconductor element and method for manufacturing thereof |
| 04/12/2006 | EP1645656A1 Organometallic compounds suitable for use in vapor deposition processes |
| 04/11/2006 | US7026228 Methods of fabricating devices and semiconductor layers comprising cadmium mercury telluride, mercury telluride, and cadmium telluride |
| 04/11/2006 | US7026219 Integration of high k gate dielectric |
| 04/11/2006 | US7026179 Method of manufacturing a semiconductor light emitting device utilizing a nitride III-V compound semiconductor substrate |
| 04/11/2006 | US7026169 Method of forming PZT ferroelectric film |
| 04/11/2006 | US7025826 Depositing amorphous material on substrate; ion beam bombardement with oxygen; high temperature superconductors |
| 04/06/2006 | US20060073978 Method and apparatus for making continuous films of a single crystal material |
| 04/06/2006 | US20060071165 Bulk synthesis of long nanotubes of transition metal chalcogenides |
| 04/06/2006 | DE19963283B4 Verfahren zur Herstellung eines GaN-Verbindungshalbleiters A method of making a GaN compound semiconductor |
| 04/05/2006 | EP1643544A1 Method for producing silicon epitaxial wafer and silicon epitaxial wafer |
| 04/05/2006 | EP1642865A1 Nano-fiber or nano-tube comprising v group transition metal dichalcogenide crystals, and method for preparation thereof |
| 04/05/2006 | EP1642327A2 METHOD FOR GROWING SINGLE CRYSTAL GaN ON SILICON |
| 04/05/2006 | EP1397835B1 Method of controlling the crystal orientation of a composite structure |
| 04/05/2006 | CN1249780C Method for growing GaN crystal chip and GaN crystal chip |
| 04/05/2006 | CN1248959C Carbon nano pipe array growth method |
| 04/04/2006 | US7023025 Crystal growth method of nitride semiconductor |
| 04/04/2006 | US7022593 SiGe rectification process |
| 04/04/2006 | US7022545 Production method of SiC monitor wafer |
| 04/04/2006 | US7022191 Method of crystallizing amorphous silicon layer and crystallizing apparatus thereof |
| 04/04/2006 | US7022184 Atomic layer CVD |
| 04/04/2006 | US7021238 Molecular beam epitaxy equipment |
| 03/30/2006 | US20060068992 Method for growing thin oxide films |
| 03/30/2006 | US20060065187 Ultratough CVD single crystal diamond and three dimensional growth thereof |
| 03/30/2006 | US20060065186 Process for producing crystalline thin film |
| 03/30/2006 | US20060065185 Crystallization apparatus, crystallization method, and phase shifter |
| 03/30/2006 | DE10043587B4 Verfahren zur Herstellung eines Substrats, nach diesem Verfahren hergestelltes Substrat A method for producing a substrate, prepared by this process substrate |
| 03/29/2006 | EP1641051A2 Growth of III-nitride light-emitting devices on textured substrates |
| 03/29/2006 | EP1640481A1 rotatable substrate holder |
| 03/29/2006 | EP1639157A1 Method of synthesising a crystalline material and material thus obtained |
| 03/29/2006 | EP1404903B1 Process chamber with a base with sectionally different rotational drive and layer deposition method in such a process chamber |
| 03/29/2006 | CN1248288C Methods of fabricating gallium nitride semiconductor layers and related structure method |
| 03/29/2006 | CN1247833C Silicon epitaxial wafer and its manufacturing method |
| 03/28/2006 | US7018912 Fabrication method of nitride semiconductors and nitride semiconductor structure fabricated thereby |
| 03/28/2006 | US7018728 Single crystal substrate having formed thereon a boron-phosphide (BP)-based semiconductor layer having p-type or n-type electrical conductivity or high resistance; light emitting diodes |
| 03/28/2006 | US7018597 High resistivity silicon carbide single crystal |
| 03/28/2006 | US7018478 Method of growing a thin film onto a substrate |
| 03/28/2006 | US7018469 Atomic layer deposition methods of forming silicon dioxide comprising layers |
| 03/28/2006 | US7017652 Method and apparatus for transferring heat from a substrate to a chuck |
| 03/23/2006 | US20060060132 Production method for thin-film crystal wafer, semiconductor device using it and production method therefor |
| 03/23/2006 | US20060060131 Method of forming a rare-earth dielectric layer |
| 03/22/2006 | EP1636807A2 Method of producing biaxially textured buffer layers and related articles, devices and systems |
| 03/22/2006 | EP1636404A1 System for growing silicon carbide crystals |
| 03/22/2006 | CN1748862A Process for preparing carbon nano tube and carbon onion by Ni/Al catalyst chemical gas phase deposition |
| 03/22/2006 | CN1246887C Plasma processing device and semiconductor mfg. device |
| 03/22/2006 | CN1246508C Metal organic compound vapor deposition device for the growth of zinc oxide semiconductor film |
| 03/21/2006 | US7015515 Group III nitride compound semiconductor device having a superlattice structure |
| 03/21/2006 | US7015422 System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy |
| 03/21/2006 | US7014830 Method for mass-producing carbon nanocoils |
| 03/21/2006 | US7014710 Method of growing single crystal Gallium Nitride on silicon substrate |
| 03/21/2006 | US7014709 Thin layer metal chemical vapor deposition |
| 03/21/2006 | US7014708 Method of forming a thin film transistor by utilizing a laser crystallization process |
| 03/21/2006 | US7014703 Method for annealing group IIA metal fluoride crystals |
| 03/16/2006 | WO2006028868A2 Method and apparatus for growth of multi-component single crystals |
| 03/16/2006 | US20060057800 Methods for treating pluralities of discrete semiconductor substrates |
| 03/16/2006 | US20060057749 Template type substrate and a method of preparing the same |
| 03/16/2006 | US20060054936 Nanosensors |
| 03/16/2006 | US20060054091 Support system for a treatment apparatus |
| 03/16/2006 | US20060054079 Forming structures by laser deposition |
| 03/16/2006 | US20060054076 Phosphor single crystal substrate and method for preparing the same, and nitride semiconductor component using the same |
| 03/16/2006 | US20060054075 Substrate for epitaxy and method of preparing the same |
| 03/16/2006 | DE10303875B4 Struktur, insbesondere Halbleiterstruktur, sowie Verfahren zur Herstellung einer Struktur Structure, in particular semiconductor structure, as well as methods for manufacturing a structure |
| 03/16/2006 | DE102004038573A1 Epitaxially growing thick tear-free group III nitride semiconductor layers used in the production of modern opto-electronic and electronic components comprises using an aluminum-containing group III nitride intermediate layer |
| 03/15/2006 | EP1635383A2 Compound semiconductor device epitaxial growth substrate, semiconductor device, and manufacturing method thereof |
| 03/15/2006 | EP1634321A2 Phase controlled sublimation |
| 03/15/2006 | EP1633911A2 Method of forming a layer of silicon carbide on a silicon wafer |
| 03/15/2006 | EP1305161A4 Electronic and optical materials |
| 03/15/2006 | CN1748290A Gallium nitride crystal, homoepitaxial gallium-nitride-based devices and method for producing same |
| 03/14/2006 | US7012318 Oxygen-doped n-type gallium nitride freestanding single crystal substrate |
| 03/14/2006 | US7011711 Chemical vapor deposition reactor |
| 03/14/2006 | US7011707 Production method for semiconductor substrate and semiconductor element |
| 03/14/2006 | US7011706 Device substrate and method for producing device substrate |
| 03/09/2006 | WO2006025593A2 Growth of nitride semiconductor crystals |
| 03/09/2006 | US20060051554 To be used for growth of a nitride semiconductor on a sapphire substrate |
| 03/09/2006 | US20060051280 Carbide nanofribrils and method of making same |
| 03/09/2006 | US20060048702 Method for manufacturing a silicon structure |
| 03/09/2006 | US20060048701 Method of growing group III nitride crystals |