| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 06/07/2006 | EP1664394A2 Ultrahard diamonds and method of making thereof |
| 06/07/2006 | EP1664393A2 Methods of processing of gallium nitride |
| 06/07/2006 | EP1664375A2 Precursor delivery system |
| 06/07/2006 | EP1664373A2 Annealing single crystal chemical vapor deposition diamonds |
| 06/07/2006 | EP1663866A2 Tough diamonds and method of making thereof |
| 06/07/2006 | EP1086355B1 Ellipsometric method and control device for making a thin-layered component |
| 06/07/2006 | CN1784515A Semiconductor substrate,semiconductor device,light emitting diode and producing method therefor |
| 06/07/2006 | CN1782142A Wafer guide, MOCVD equipment, and nitride semiconductor growth method |
| 06/07/2006 | CN1258807C Heat treatment equipment and semiconductor device manufacture method |
| 06/06/2006 | US7057204 III-V group nitride system semiconductor substrate |
| 06/06/2006 | US7056383 Tantalum based crucible |
| 06/06/2006 | US7056382 Excimer laser crystallization of amorphous silicon film |
| 06/01/2006 | WO2006057826A2 Topotactic anion exchange oxide films and method of producing the same |
| 06/01/2006 | WO2006057659A1 Growth of carbon nanotubes at low temperature on a transition metal layer |
| 06/01/2006 | US20060112874 Highly-oriented diamond film, method for manufacturing the same, and electronic device having highly-oriented diamond film |
| 05/31/2006 | EP1662023A1 Method of coating for diamond electrode |
| 05/31/2006 | EP1661239A2 Method and apparatus for bi-planar backward wave oscillator |
| 05/31/2006 | EP1660702A1 A method of fabricating an epitaxially grown layer |
| 05/31/2006 | EP1660697A1 Alkyl push flow for vertical flow rotating disk reactors |
| 05/31/2006 | EP1221177B1 Conformal lining layers for damascene metallization |
| 05/31/2006 | CN1780936A Process and apparatus for depositing semiconductor layers using two process gases, one of which is preconditioned |
| 05/31/2006 | CN1258005C Method of preparing oxide film by molecular beam epitaxy |
| 05/31/2006 | CN1258000C Chemical raw material dispensing system |
| 05/30/2006 | US7052979 Production method for semiconductor crystal and semiconductor luminous element |
| 05/30/2006 | US7052547 Apparatus for supplying raw material |
| 05/30/2006 | US7052546 High-purity crystal growth |
| 05/25/2006 | US20060107891 Topotactic anion exchange oxide films and method of producing the same |
| 05/25/2006 | US20060107890 One hundred millimeter single crystal silicon carbide wafer |
| 05/24/2006 | EP1659198A1 Single crystal of silicon carbide, and method and apparatus for producing the same |
| 05/24/2006 | EP1658394A1 Method to manufacture indium nitride quantum dots |
| 05/24/2006 | EP0830218B1 Structures having enhanced biaxial texture and method of fabricating same |
| 05/24/2006 | CN1777707A Support system for treating device |
| 05/24/2006 | CN1777696A Methods and apparatus for atomic layer deposition |
| 05/23/2006 | US7049627 Semiconductor heterostructures and related methods |
| 05/23/2006 | US7049212 Method for producing III-IV group compound semiconductor layer, method for producing semiconductor light emitting element, and vapor phase growing apparatus |
| 05/23/2006 | US7049154 Vapor phase growth method by controlling the heat output in the gas introduction region |
| 05/23/2006 | US7048967 Organic film vapor deposition method and a scintillator panel |
| 05/23/2006 | US7048802 CVD reactor with graphite-foam insulated, tubular susceptor |
| 05/18/2006 | US20060102068 Reduction of subsurface damage in the production of bulk SiC crystals |
| 05/18/2006 | US20060102067 Organic light emitting display with single crystalline silicon TFT and method of fabricating the same |
| 05/18/2006 | DE10346368B4 Verfahren und Herstellungsanlage zum Herstellen eines schichtartigen Bauteils Processes and manufacturing plant for the production of a layer-like part |
| 05/17/2006 | EP1657744A2 Wafer guide, MOCVD equipment, and nitride semiconductor growth method |
| 05/17/2006 | EP1657740A1 Silicon carbide epitaxial wafer, method for producing such wafer, and semiconductor device formed on such wafer |
| 05/17/2006 | CN1774794A Susceptor and vapor growth device |
| 05/17/2006 | CN1774523A Volatile copper(I) complexes for deposition of copper films by atomic layer deposition |
| 05/17/2006 | CN1772975A Process for Li doping growing P type ZnO Single Crystal film |
| 05/16/2006 | US7045808 III-V nitride semiconductor substrate and its production lot, and III-V nitride semiconductor device and its production method |
| 05/16/2006 | US7045009 Method and apparatus for manufacturing single crystal |
| 05/11/2006 | WO2005095263A3 Methods of forming alpha and beta tantalum films with controlled and new microstructures |
| 05/11/2006 | US20060099781 Method for producing by vapour-phase epitaxy a gallium nitride film with low defect density |
| 05/11/2006 | US20060097353 Oxygen doping method to gallium nitride single crystal substrate and oxygen-doped n-type gallium nitride freestanding single crystal substrate |
| 05/11/2006 | US20060096524 Crystal growth method for nitride semiconductor and formation method for semiconductor device |
| 05/11/2006 | DE102004053307A1 Mehrschichtenstruktur umfassend ein Substrat und eine darauf heteroepitaktisch abgeschiedene Schicht aus Silicium und Germanium und ein Verfahren zu deren Herstellung Multilayered structure comprising a substrate and a heteroepitaxial layer deposited from silicon and germanium, and a process for their preparation |
| 05/10/2006 | EP1655766A1 Substrate for nitride semiconductor growth |
| 05/10/2006 | EP1654754A1 Gas-supply assembly, in particular for a cvd process reactor for growing an epitaxial layer |
| 05/10/2006 | EP1654752A2 Holder for supporting wafers during semiconductor manufacture |
| 05/10/2006 | CN1771356A CVD diamond in wear applications |
| 05/10/2006 | CN1769546A Method for developping directionally aligning carbon nanometer tube array on silicon substrate |
| 05/10/2006 | CN1769545A Method for developping directionally aligning zinc oxide nanometer rod array on silicon substrate |
| 05/10/2006 | CN1255583C Method for producing gallium nitride |
| 05/10/2006 | CN1255582C Reaction chamber for an epitaxial reactor |
| 05/09/2006 | US7042141 An epitaxial crystal thin film on a substrate, having formula Pb1-xLnxZryTi1-yO3, ( Ln represents any one selected from the group consisting of lanthanum, lanthanoid elements, niobium, calcium, barium, strontium, iron, manganese and tin) |
| 05/09/2006 | US7041170 Method of producing high quality relaxed silicon germanium layers |
| 05/04/2006 | WO2005081283A3 Substrate support system for reduced autodoping and backside deposition |
| 05/04/2006 | US20060091393 Isotopically pure silicon-on-insulator wafers and methods of making same |
| 05/04/2006 | US20060090694 Method for atomic layer deposition (ALD) of silicon oxide film |
| 05/04/2006 | US20060090693 Selective growth of ZnO nanostructure using a patterned ALD ZnO seed layer |
| 05/04/2006 | US20060090692 Generating nano-particles for chemical mechanical planarization |
| 05/04/2006 | US20060090691 Method for manufacturing bonded wafer with ultra-thin single crystal ferroelectric film |
| 05/04/2006 | US20060090690 Method of purifying alkaline-earth and alkali-earth halides for crystal growth |
| 05/03/2006 | EP1653502A1 Semiconductor layer |
| 05/03/2006 | EP1651802A1 Support system for treatment apparatuses |
| 05/03/2006 | EP1423558B1 Susceptor with epitaxial growth control devices and epitaxial reactor using the same |
| 05/03/2006 | CN1768167A Substrate for forming magnetic garnet single-crystal film, process for producing the same, optical device and process for producing the same |
| 05/03/2006 | CN1254567C Single-slice three-chambers type infrared heating superhigh vacuum CVD epitaxial system |
| 05/02/2006 | US7038299 Selective synthesis of semiconducting carbon nanotubes |
| 05/02/2006 | US7037574 Atomic layer deposition for fabricating thin films |
| 05/02/2006 | US7037372 Method of growing a thin film onto a substrate |
| 05/02/2006 | US7037370 Free-standing diamond structures and methods |
| 04/27/2006 | WO2006043780A1 Diamond shell with a geometrical figure and method for fabrication thereof |
| 04/27/2006 | US20060089007 In situ deposition of a low K dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application |
| 04/27/2006 | US20060086314 Iridium oxide nanowires and method for forming same |
| 04/27/2006 | US20060086313 Soi wafer and method for manufacturing same |
| 04/26/2006 | EP1650788A1 Vapor deposition apparatus and vapor deposition method |
| 04/26/2006 | EP1649500A2 Method and structure of strain control of sige based photodetectors and modulators |
| 04/26/2006 | EP1649499A2 Silicon crystallization using self-assembled monolayers |
| 04/26/2006 | EP1649495A2 Epitaxial growth of relaxed silicon germanium layers |
| 04/26/2006 | EP1649076A2 Apparatus and method for chemical source vapor pressure control |
| 04/26/2006 | EP1493175B1 Gas driven planetary rotation apparatus and methods for forming silicon carbide layers |
| 04/26/2006 | EP1440180B1 Method and device for depositing especially crystalline layers onto especially crystalline substrates |
| 04/26/2006 | CN1763913A Substrate processing apparatus and substrate processing method |
| 04/26/2006 | CN1763268A Growth control method for A-plane and M-plane GaN film material |
| 04/26/2006 | CN1763267A Preparation method for large-particle monocrystal diamond by DC plasma sedimentation |
| 04/26/2006 | CN1763049A Trimethylgallium, a method for producing the same and a gallium nitride thin film grown from the trimethylgallium |
| 04/26/2006 | CN1253611C Process for preparing monocrystal membrane of Gallium nitride |
| 04/25/2006 | US7033938 Method of making a long wavelength indium gallium arsenide nitride (InGaAsN) active region |
| 04/25/2006 | US7033922 Method and system for controlling the presence of fluorine in refractory metal layers |
| 04/25/2006 | US7033921 Method and device for depositing crystalline layers on crystalline substrates |
| 04/25/2006 | US7033858 Method for making Group III nitride devices and devices produced thereby |
| 04/25/2006 | US7033843 Semiconductor manufacturing method and semiconductor manufacturing apparatus |