Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
07/2006
07/20/2006WO2006076354A2 Diamond medical devices
07/20/2006WO2005007936A3 Ultrahard diamonds and method of making thereof
07/20/2006US20060156971 Apparatus for manufacturing single crystal
07/20/2006US20060156970 Methods for in-situ cleaning of semiconductor substrates and methods of semiconductor device fabrication employing the same
07/20/2006US20060156969 Silicon wafer, process for producing the same and method of growing silicon single crystal
07/20/2006DE102005042587A1 Verfahren und Vorrichtung zur Herstellung eines auf Galliumnitrid basierenden Einzelkristallsubstrats Method and apparatus for producing a gallium nitride based single crystal substrate
07/20/2006DE102005000826A1 Halbleiterscheibe mit Silicium-Germanium-Schicht und Verfahren zu deren Herstellung Semiconductor wafer having silicon-germanium layer and processes for their preparation
07/19/2006CN1806069A System for growing silicon carbide crystals
07/19/2006CN1805122A Coated semiconductor wafer and method and apparatus to obtain it
07/19/2006CN1805121A Semiconductor wafer with an epitaxially deposited layer, and process for producing the semiconductor wafer
07/19/2006CN1804116A Highly-oriented diamond film, method for manufacturing the same, and electronic device having highly-oriented diamond film
07/19/2006CN1265432C Reactor with mobile Persian blind baffle
07/19/2006CN1265431C SiGe on relaxed, low-defect insulator and its making method
07/18/2006US7078318 Method for depositing III-V semiconductor layers on a non-III-V substrate
07/18/2006US7077904 Method for atomic layer deposition (ALD) of silicon oxide film
07/18/2006US7077903 Etch selectivity enhancement for tunable etch resistant anti-reflective layer
07/18/2006US7077902 Atomic layer deposition methods
07/13/2006US20060154480 Vaporizer for cvd, solution voporizing cvd system and voporization method for cvd
07/13/2006US20060154454 Method for fabricating gaN-based nitride layer
07/13/2006US20060153994 subjecting a gas containing H2 and carbon(CH4) to a pulsed discharge, pulsed discharge has a succession of low-power states and of high-power states and a peak absorbed power, in order to obtain carbon containing radicals in the plasma, radicals deposit on the substrate in order to form a diamond film
07/13/2006US20060150904 Substrate-processing apparatus and method of producing a semiconductor device
07/13/2006US20060150895 Apparatus for fabricating a III-V nitride film and a method for fabricating the same
07/13/2006US20060150894 Method for producing a wafer
07/13/2006US20060150893 Substrate for forming magnetic garnet single-crystal film, process for producing the same, optical device and process for producing the same
07/13/2006DE102004062356A1 Halbleiterscheibe mit einer Halbleiterschicht und einer darunter liegenden elektrisch isolierenden Schicht sowie Verfahren zu deren Herstellung Semiconductor wafer with a semiconductor layer and an underlying electrically insulating layer and to processes for their preparation
07/12/2006EP1678741A1 Method of fabrication and device comprising elongated nanosize elements
07/12/2006EP1678353A2 Atomic layer deposition of hafnium-based high-k dielectric
07/12/2006CN1802739A A method of preparation of an epitaxial substrate
07/11/2006US7075111 Nitride semiconductor substrate and its production method
07/11/2006US7074641 Method of forming silicon-based thin film, silicon-based thin film, and photovoltaic element
07/11/2006US7074272 Cubic (zinc-blend) aluminum nitride and method of making same
07/11/2006US7074271 Method of identifying defect distribution in silicon single crystal ingot
07/11/2006CA2229476C Fluid control apparatus
07/06/2006WO2006071126A1 Thin films prepared with gas phase deposition technique
07/06/2006WO2006069908A1 Cvd reactor comprising an rf-heated treatment chamber
07/06/2006WO2006057826A3 Topotactic anion exchange oxide films and method of producing the same
07/06/2006US20060148225 Methods for fabricating strained layers on semiconductor substrates
07/06/2006US20060145182 Nitride semiconductor element and method for manufacturing thereof
07/06/2006US20060145166 Semiconductor apparatus, method for growing nitride semiconductor and method for producing semiconductor apparatus
07/06/2006US20060144333 Atomic layer deposition apparatus and method
07/06/2006US20060144325 Driving shaft of effusion cell for deposition system and deposition system having the same
07/06/2006US20060144324 Silicon carbide single crystal and method and apparatus for producing the same
07/06/2006US20060144323 Substrate with locally integrated single crystalline silicon layer and method of fabricating the same
07/06/2006US20060144322 Ultrahard diamonds and method of making thereof
07/05/2006EP1370709A4 A chemical vapor deposition process and apparatus thereof
07/05/2006EP1305823A4 Process for growing a magnesium oxide film on a silicon (100) substrate coated with a cubic silicon carbide buffer layer
07/05/2006CN1262684C Method for production of coated substrates
07/04/2006US7071149 Method of producing biaxially textured buffer layers and related articles, devices and systems
07/04/2006US7071022 Silicon crystallization using self-assembled monolayers
07/04/2006US7070650 Diamond film and method for producing the same
06/2006
06/29/2006US20060138446 Algainn based optical device and fabrication method thereof
06/29/2006US20060137600 Lightly doped silicon carbide wafer and use thereof in high power devices
06/29/2006DE102004060625A1 Beschichtete Halbleiterscheibe und Verfahren und Vorrichtung zur Herstellung der Halbleiterscheibe Coated wafer and method and apparatus for producing the semiconductor wafer
06/29/2006DE102004060624A1 Halbleiterscheibe mit epitaktisch abgeschiedener Schicht und Verfahren zur Herstellung der Halbleiterscheibe Semiconductor wafer having epitaxially deposited layer and method for manufacturing the semiconductor wafer
06/29/2006DE10194628B4 Gassammler für einen Epitaxiereaktor Gas collector for an epitaxial reactor
06/28/2006EP1673306A1 Method for the synthesis of filament structures on a nanometre scale and electronic components comprising such structures
06/28/2006EP0972096B1 Process for preparing polysilicon using exothermic reaction heat
06/28/2006CN1261978C Semiconductor structure
06/27/2006US7067856 Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
06/27/2006US7067847 Semiconductor element
06/27/2006US7067401 Fabrication method of nitride semiconductors and nitride semiconductor structure fabricated thereby
06/27/2006US7067012 CVD coating device
06/27/2006US7067005 Silicon wafer production process and silicon wafer
06/22/2006US20060130746 Method for forming nickel silicide film, method for manufacturing semiconductor device, and method for etching nickel silicide
06/22/2006US20060130745 Domain epitaxy for thin film growth
06/22/2006US20060130744 Pulsed mass flow delivery system and method
06/22/2006US20060130743 Low temperature load and bake
06/22/2006US20060130742 Process for producing silicon carbide crystals having increased minority carrier lifetimes
06/21/2006EP1194950A4 Process for polycrystalline silicon film growth and apparatus for same
06/21/2006CN1791966A Manufacturing gallium nitride substrates by lateral overgrowth through masks and devices fabricated thereof
06/21/2006CN1791706A Method for producing single crystal of multi- element oxide single crystal containing bismuth as constituting element
06/21/2006CN1791705A Silicon epitaxial wafer, and silicon epitaxial wafer producing method
06/21/2006CN1260776C Semiconductor substrate, semiconductor element and its manufacturing method
06/21/2006CN1260403C Deposition of atom layer by utilizing precursor containing nitrate
06/20/2006US7063981 Producing a thin film on a substrate by subjecting the substrate to repeated pulses of gas or vapor-phase reactants
06/20/2006US7063742 N-type semiconductor diamond and its fabrication method
06/20/2006US7063740 Process for strengthen grain boundaries of an article made from a Ni based superalloy
06/15/2006US20060128132 Method and system for controlling the presence of fluorine in refractory metal layers
06/15/2006US20060128124 Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy
06/15/2006US20060125057 Method for the production of a composite sicoi-type substrate comprising an epitaxy stage
06/15/2006US20060124349 Diamond-coated silicon and electrode
06/15/2006US20060124051 Zinc oxide single crystal
06/14/2006EP1670044A1 Production method for silicon epitaxial wafer, and silicon epitaxial wafer
06/14/2006EP1668668A2 Deposition of silicon-containing films from hexachlorodisilane
06/14/2006EP1668173A1 Method and facility for the production of a layer-like part
06/14/2006DE19983159B4 Verfahren zur Herstellung eines Funktionselementes zur Verwendung in einer elektrischen, elektronischen oder optischen Vorrichtung Process for the preparation of a functional element for use in an electric, electronic or optical device
06/14/2006CN1787965A Nano-fiber or nano-tube comprising v group transition metal dichalcogenide crystals, and method for preparation thereof
06/14/2006CN1259450C Chemical vapour deposition device and method
06/13/2006US7060632 Methods for fabricating strained layers on semiconductor substrates
06/13/2006US7060597 Manufacturing method for a silicon substrate having strained layer
06/13/2006US7060132 Method and apparatus of growing a thin film
06/13/2006US7060130 Heteroepitaxial diamond and diamond nuclei precursors
06/08/2006WO2005087983A3 Alternative methods for fabrication of substrates and heterostructures made of silicon compounds and alloys
06/08/2006US20060118810 Crystal growth method of nitride semiconductor
06/08/2006US20060118048 Susceptor system
06/08/2006US20060118043 Method for producing coated workpieces, uses and installation for the method
06/08/2006US20060118037 Process for producing high quality large size silicon carbide crystals
06/08/2006US20060118036 Semiconductor thin film and process for production thereof
06/07/2006EP1665339A2 High-purity crystal growth
06/07/2006EP1664396A1 A method of fabricating an epitaxially grown layer
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