| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 09/06/2006 | CN1273653C Preparation process of zinc oxide bar-shaped single crystal nano-probe |
| 09/05/2006 | US7103271 plane-shaped heating component faces one surface of a workpiece, irradiating light to raise the temperature of a semiconductor wafer; distortion-free; relieving stress by giving a distribution to a light irradiation intensity of an open loop control, reducing temperature variation |
| 09/05/2006 | US7102235 Conformal lining layers for damascene metallization |
| 09/05/2006 | US7101795 Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer |
| 09/05/2006 | US7101794 Coated semiconductor wafer, and process and device for producing the semiconductor wafer |
| 09/05/2006 | US7101774 Method of manufacturing compound single crystal |
| 09/05/2006 | US7101444 Defect-free semiconductor templates for epitaxial growth |
| 09/05/2006 | US7101435 Methods for epitaxial silicon growth |
| 09/05/2006 | US7101434 Fractal structure and its forming method |
| 08/31/2006 | WO2006091448A2 Chemical vapor deposition reactor having multiple inlets |
| 08/31/2006 | US20060191474 Method and structure for fabricating III-V nitride layers on silicon substrates |
| 08/31/2006 | US20060191473 Method for manufacturing semiconductor device, integrated circuit, electrooptics device, and electronic apparatus |
| 08/30/2006 | EP1694887A2 Controlled growth of gallium nitride nanostructures |
| 08/30/2006 | CN1826683A Silicon crystallization using self-assembled monolayers |
| 08/30/2006 | CN1826434A Method of fabricating an epitaxially grown layer |
| 08/30/2006 | CN1826433A Method of fabricating an epitaxially grown layer |
| 08/30/2006 | CN1824849A Silicon substrate III family nitride epitaxial growth |
| 08/30/2006 | CN1272639C Scintillator panel |
| 08/29/2006 | US7097735 Plasma processing device |
| 08/29/2006 | US7097708 Substituted donor atoms in silicon crystal for quantum computer |
| 08/24/2006 | US20060185596 Vapor phase growth method by controlling the heat output in the gas introduction region |
| 08/24/2006 | US20060185583 Single crystal diamond grown by microwave plasma chemical vapor deposition and annealed at pressures in excess of 4.0 GPa and a temperature in excess of 1500 degrees C. to have a hardness in excess of 120 GPa. |
| 08/24/2006 | US20060185582 High efficiency solar cells utilizing wafer bonding and layer transfer to integrate non-lattice matched materials |
| 08/24/2006 | US20060185581 Method for producing a semiconductor wafer |
| 08/24/2006 | US20060185579 Free-standing diamond structures and methods |
| 08/23/2006 | EP1693905A1 Process of manufacturing biaxial oriented coatings and apparatus therefore |
| 08/23/2006 | EP1184897B1 Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method |
| 08/23/2006 | EP1049813B1 Cvd reactor and process |
| 08/23/2006 | CN1823400A Nitride semiconductor element and method for manufacturing thereof |
| 08/23/2006 | CN1823008A Tough diamonds and method of making thereof |
| 08/23/2006 | CN1271767C Method for producing nitride semiconductor device |
| 08/23/2006 | CN1271252C Process for preparing polysilicon using exothermic reaction |
| 08/23/2006 | CN1271251C Method of preparing ZnO crystal whisker adopting atmosphere open type MOCVD and apparatus therefor |
| 08/23/2006 | CN1271250C Method of preparing one-dimensional array material adopting atmosphere open type MOCVD and apparatus therefor |
| 08/22/2006 | US7094690 Deposition methods and apparatuses providing surface activation |
| 08/22/2006 | US7094289 Method for manufacturing highly-crystallized oxide powder |
| 08/22/2006 | US7094288 Method for producing a positively doped semiconductor with large forbidden band |
| 08/17/2006 | WO2006085994A2 Multi-component substances and apparatus for preparation thereof |
| 08/17/2006 | WO2005122267A3 Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy |
| 08/17/2006 | WO2004072319A3 Free-standing diamond structures and methods |
| 08/17/2006 | US20060183625 Substrate for forming thin film, thin film substrate, optical wave guide, luminescent element and substrate for carrying luminescent element |
| 08/17/2006 | US20060183322 Deposition methods and apparatuses providing surface activation |
| 08/17/2006 | US20060180086 Susceptor and vapor growth device |
| 08/17/2006 | US20060180077 Method of growing semiconductor crystal |
| 08/17/2006 | US20060180076 Vapor deposition apparatus and vapor deposition method |
| 08/17/2006 | DE112004001230T5 Züchtungsverfahren für Nitridhalbleiter-Epitaxieschichten The growth method of nitride semiconductor epitaxial layers |
| 08/17/2006 | DE102006005875A1 Epitaxial semiconductor substrate manufacturing method involves forming epitaxial layer over gettering layer |
| 08/16/2006 | EP1690288A1 Strained semiconductor substrate and processes therefor |
| 08/16/2006 | EP1689582A1 Novel polymer films and textile laminates containing such polymer films |
| 08/16/2006 | CN1820353A Growth method of nitride semiconductor epitaxial layers |
| 08/16/2006 | CN1269999C Process for mixing oxygen into gallium nitride crystal and oxygen-mixed n-type gallium nitride single crystal plate |
| 08/15/2006 | US7091514 Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices |
| 08/15/2006 | US7091129 Atomic layer deposition using photo-enhanced bond reconfiguration |
| 08/15/2006 | US7091056 Method of manufacturing a semiconductor light emitting device, semiconductor light emitting device, method of manufacturing a semiconductor device, semiconductor device, method of manufacturing a device, and device |
| 08/10/2006 | WO2006083909A2 Method of making substitutionally carbon-highly doped crystalline si-layers by cvd |
| 08/10/2006 | WO2006083821A1 Selective deposition of silicon-containing films |
| 08/10/2006 | WO2006082118A1 Process and device for depositing sequences of layers comprising a plurality of semiconductor components |
| 08/10/2006 | US20060174826 Tantalum based crucible |
| 08/10/2006 | US20060174825 Method of forming semi-insulating silicon carbide single crystal |
| 08/10/2006 | US20060174824 Avalanche multiplication photosensor employing extremely thin molecular crystal and process for fabricating the same |
| 08/10/2006 | US20060174818 Method of producing high quality relaxed silicon germanium layers |
| 08/10/2006 | US20060174815 Process for manufacturing a gallium rich gallium nitride film |
| 08/09/2006 | EP1687841A1 Formation of lattice-tuning semiconductor substrates |
| 08/09/2006 | EP1149184B1 Method and system for producing semiconductor crystals using temperature management |
| 08/09/2006 | CN1816898A Substrate processing system |
| 08/09/2006 | CN1814864A Method for preparing nano four-needle-shape zinc oxide crystal whisker |
| 08/09/2006 | CN1269185C 半导体晶片及其制造方法 And a method of manufacturing a semiconductor wafer |
| 08/08/2006 | US7087535 Multilayer; overcoating substrate with dielectric; atomic layer deposition |
| 08/08/2006 | US7087114 Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate |
| 08/08/2006 | US7087111 Method of forming a refractory metal silicide |
| 08/03/2006 | WO2006081104A2 Semiconductor wafer boat for a vertical furnace |
| 08/03/2006 | WO2006081023A2 Method and apparatus for monolayer deposition (mld) |
| 08/03/2006 | US20060172513 Method for producing semiconductor light emitting device, method for producing semiconductor device, method for producing device, method for growing nitride type iii-v group compound semiconductor layer, method for growing semiconductor layer, and method for growing layer |
| 08/03/2006 | US20060170000 Nitride-based compound semiconductor substrate and method for fabricating the same |
| 08/03/2006 | DE102005004311A1 Depositing semiconductor layers on a series of substrates comprises passing each substrate through a series of process chambers in which a single layer is deposited |
| 08/03/2006 | DE102005003884A1 Verfahren zur Herstellung von c-plane orientierten GaN-oder AlxGa1-xN-Substraten A process for producing c-plane oriented GaN or Al x Ga 1-x N-substrates |
| 08/02/2006 | EP1684973A2 Vicinal gallium nitride substrate for high quality homoepitaxy |
| 08/02/2006 | EP1230448B1 Patterned carbon nanotubes |
| 08/02/2006 | CN1812053A 外延生长方法 Epitaxial growth |
| 08/02/2006 | CN1811018A Epitaxial growth process of high-crystallinity monocrystal indium nitride film |
| 08/02/2006 | CN1267587C Method for producing a gallium nitride epitaxial layer |
| 08/01/2006 | US7084049 Manufacturing method for buried insulating layer-type semiconductor silicon carbide substrate |
| 08/01/2006 | US7083680 Sublimation and purification method |
| 08/01/2006 | US7083679 Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device |
| 07/27/2006 | WO2006078666A2 Reaction system for growing a thin film |
| 07/27/2006 | WO2006077221A1 Method for the production of c plane-oriented gan substrates or alxga1-xn substrates |
| 07/27/2006 | WO2006043157A3 Diamond coated surfaces |
| 07/27/2006 | US20060166831 Method of forming thin film on base substance via intermediate layer |
| 07/27/2006 | US20060166468 Semiconductor substrate, semiconductor device, light emitting diode and producing method therefor |
| 07/27/2006 | US20060163605 Substrate for thin film formation, thin film substrate, and light-emitting device |
| 07/27/2006 | DE10319972B4 Verfahren zur Herstellung einer epitaktischen ZnO-Schicht A method for producing a ZnO epitaxial layer |
| 07/27/2006 | DE102005004582A1 III/V Semiconductor, useful to prepare e.g. luminescence diode, vertical external cavity surface emitting laser diode, modulator structure or detector structure, comprises a semiconducting metal composition |
| 07/26/2006 | EP1684335A1 Process for producing silicon epitaxial wafer |
| 07/26/2006 | EP1683897A1 Wafer with semiconductor layer and insolator layer below it, and method therefore |
| 07/26/2006 | EP1682701A2 LARGE AREA, UNIFORMLY LOW DISLOCATION DENSITY GaN SUBSTRATE AND PROCESS FOR MAKING THE SAME |
| 07/26/2006 | CN1807705A Method of producing a dopant gas species |
| 07/26/2006 | CN1266746C Method for forming strong dielectric membrane |
| 07/25/2006 | US7081420 Method for preparing SiC crystal and SiC crystal |
| 07/25/2006 | US7081418 Method of fabricating a multi-layered thin film by using photolysis chemical vapor deposition |
| 07/25/2006 | US7081162 Method of manufacturing bulk single crystal of gallium nitride |