C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth

Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
11/2006
11/30/2006	WO2006125777A1 Device for introducing reaction gases into a reaction chamber and epitaxial reactor which uses said device
11/30/2006	US20060270200 III group nitride semiconductor substrate, substrate for group III nitride semiconductor device, and fabrication methods thereof
11/30/2006	US20060266282 Variable temperature deposition methods
11/30/2006	US20060266281 Manufacturing gallium nitride substrates by lateral overgrowth through masks and devices fabricated thereof
11/30/2006	US20060266280 Semiconductor Devices Having Gallium Nitride Epilayers on Diamond Substrates
11/30/2006	DE102005024073A1 Halbleiter-Schichtstruktur und Verfahren zur Herstellung einer Halbleiter-Schichtstruktur Semiconductor layer structure and process for producing a semiconductor layer structure
11/29/2006	EP1726036A1 Lithographic methods to reduce stacking fault nucleation sites and structures having reduced stacking fault nucleation sites
11/29/2006	EP1185727A4 Sequential hydride vapor-phase epitaxy
11/29/2006	CN1871764A Method and apparatus for bi-planar backward wave oscillator
11/29/2006	CN1870223A Crystal growing method for single-crystal gan, and single-crystal gan substrate and manufacturing method thereof
11/29/2006	CN1870217A Method for controlling and removing fog-shaped micro-defect of silicon gas-phase epitaxial layer
11/28/2006	US7141499 Apparatus and method for growth of a thin film
11/28/2006	US7141117 Method of fixing seed crystal and method of manufacturing single crystal using the same
11/28/2006	US7141116 Method for manufacturing a silicon structure
11/28/2006	US7141115 Method of producing silicon-germanium-on-insulator material using unstrained Ge-containing source layers
11/28/2006	US7141095 Precursor material delivery system for atomic layer deposition
11/23/2006	US20060264031 Method for depositing tungsten-containing layers by vapor deposition techniques
11/23/2006	US20060260538 Use of Cl2 and/or HCl during silicon epitaxial film formation
11/23/2006	US20060260537 Wet pet food products and method for preparation
11/22/2006	EP1724378A2 Epitaxial substrate, semiconductor element, manufacturing method for epitaxial substrate and method for unevenly distributing dislocations in group III nitride crystal
11/22/2006	EP1723086A1 Method of incoporating a mark in cvd diamond
11/22/2006	EP1393359A4 Rector having a movable shuter
11/22/2006	CN1868030A Method of fabrication and device comprising elongated nanosize elements
11/22/2006	CN1865534A Single-crystal diamond and its preparation method
11/21/2006	US7138325 Method of manufacturing a wafer
11/21/2006	US7138013 Ceramic film and method of manufacturing the same, semiconductor device, and piezoelectric device
11/21/2006	US7137546 Silicon tube formed of bonded staves
11/16/2006	WO2006119927A1 Method for producing iii-n layers, and iii-n layers or iii-n substrates, and devices based thereon
11/16/2006	US20060257570 Deposition methods
11/16/2006	US20060254507 Silicon carbide single crystal and production thereof
11/16/2006	US20060254506 Methods of depositing an elemental silicon-comprising material over a substrate
11/16/2006	US20060254502 Printable electric circuits, electronic components and method of forming the same
11/16/2006	DE112004002373T5 Strained-Transistor-Integration für CMOS Strained-transistor CMOS integration for
11/16/2006	DE112004002173T5 Verfahren zur Herstellung eines epitaktischen Verbindungshalbleitersubstrats A process for producing a compound semiconductor epitaxial substrate
11/16/2006	DE102004050806A1 Verfahren zur Herstellung von (AI,Ga)N Einkristallen A process for the preparation of (AI, Ga) N single crystals
11/15/2006	EP1721031A1 Reduction of carrot defects in silicon carbide epitaxy
11/15/2006	EP1116261B1 Method and apparatus for cooling substrates
11/15/2006	CN1864246A Method of vapor phase growth and vapor phase growth apparatus
11/15/2006	CN1864245A Production method for silicon epitaxial wafer, and silicon epitaxial wafer
11/15/2006	CN1863944A Production method for semiconductor crystal and semiconductor luminous element
11/14/2006	US7135347 Method for manufacturing nitride film including high-resistivity GaN layer and epitaxial substrate manufactured by the method
11/14/2006	US7135074 Method for manufacturing silicon carbide single crystal from dislocation control seed crystal
11/14/2006	US7135073 Method and system for semiconductor crystal production with temperature management
11/14/2006	US7135071 Fractal structure and method of forming it
11/09/2006	WO2006117621A1 Diamond transistor and method of manufacture thereof
11/09/2006	WO2005036593A3 Deposition of silicon-containing films from hexachlorodisilane
11/09/2006	US20060252271 Atomic layer deposition using photo-enhanced bond reconfiguration
11/09/2006	US20060252242 Reactive codoping of gaalinp compound semiconductors
11/09/2006	US20060252166 Nitride semiconductor thin film and method for growing the same
11/09/2006	US20060252164 Process for producing gan substrate
11/09/2006	US20060249254 Plasma processing apparatus and plasma processing method
11/09/2006	US20060249075 Semiconductor chip with a porous single crystal layer and manufacturing method of the same
11/09/2006	US20060249074 Method for supplying hydrogen gas in silicon single-crystal growth, and method for manufacturing silicon single-crystal
11/09/2006	US20060249073 Method of heat treatment and heat treatment apparatus
11/08/2006	EP1720200A1 Epitaxially growing equipment
11/08/2006	EP1719167A2 Substrate support system for reduced autodoping and backside deposition
11/08/2006	EP1718784A1 Inlet system for an mocvd reactor
11/08/2006	CN1858002A Mercury-indium-tellurium-antimoy compound and its single crystal material and thin film material
11/08/2006	CN1857993A Mercury telluride, cadmium telluride and indium antimonide eutectic compound and its single crystal material and thin film material
11/07/2006	US7132351 Method of fabricating a compound semiconductor layer
11/02/2006	WO2006081023A3 Method and apparatus for monolayer deposition (mld)
11/02/2006	US20060243209 Substrate susceptors for receiving semiconductor substrates to be deposited upon
11/02/2006	US20060243208 Substrate susceptors for receiving semiconductor substrates to be deposited upon
11/02/2006	US20060243196 Methods for epitaxial silicon growth
11/02/2006	US20060243195 Epitaxy with compliant layers of group-V species
11/02/2006	US20060243194 Method of forming a crystalline phase material
11/02/2006	EP1717846A1 Vapor-phase deposition method
11/02/2006	DE10241973B4 Verfahren zur Epitaxie auf Silizium und nach dem Verfahren hergestelltes Halbleiterbauelement A method for epitaxial growth on silicon and the procedure semiconductor component produced
11/01/2006	CN1856862A Method to reduce stacking fault nucleation sites and reduce VF drift in bipolar devices
11/01/2006	CN1855362A Heat treatment device and method for manufacturing semiconductor device
10/2006
10/31/2006	US7129554 Nanosensors
10/31/2006	US7128974 Thick single crystal diamond layer method for making it and gemstones produced from the layer
10/31/2006	US7128846 Process for producing group III nitride compound semiconductor
10/31/2006	US7128787 Atomic layer deposition method
10/31/2006	US7128786 Process for depositing III-V semiconductor layers on a non-III-V substrate
10/31/2006	US7128785 Method for depositing especially crystalline layers from the gas phase onto especially crystalline substrates
10/31/2006	US7128784 Small particle-adjustment crystallization process
10/26/2006	WO2006113539A2 Semiconductor devices having gallium nitride epilayers on diamond substrates
10/26/2006	WO2006111618A1 Source, an arrangement for installing a source, and a method for installing and removing a source
10/26/2006	WO2006111617A1 Reactor
10/26/2006	US20060242740 Method and device for surfactant activated Dip-Pen Nanolithography
10/26/2006	US20060240644 Substrate with determinate thermal expansion coefficient
10/26/2006	US20060236923 Epitaxial growth of group III nitrides on silicon substrates via a reflective lattice-matched zirconium diboride buffer layer
10/26/2006	US20060236922 Method of surface treatment of group III nitride crystal film, group III nitride crystal substrate, group III nitride crystal substrate with epitaxial layer, and semiconductor device
10/26/2006	US20060236921 Method of cleaning a substrate surface from a crystal nucleus
10/26/2006	US20060236920 Fabrication method of semiconductor device
10/26/2006	US20060236919 Process for producing single crystal and silicon crystal wafer
10/25/2006	EP1713951A2 Control of carbon nanotube diameter using cvd or pecvd growth
10/25/2006	EP1576671A4 Growth of planar, non-polar a-plane gallium nitride by hydride vapor phase epitaxy
10/25/2006	CN1853006A Method of forming carbon nanotubes
10/25/2006	CN1853002A Precursor delivery system
10/25/2006	CN1853001A Annealing single crystal chemical vapor depositon diamonds
10/19/2006	WO2006083909A3 Method of making substitutionally carbon-highly doped crystalline si-layers by cvd
10/19/2006	US20060234514 Gas distribution showerhead featuring exhaust apertures
10/19/2006	US20060233969 Hybrid beam deposition system and methods for fabricating metal oxide-zno films, p-type zno films, and zno-based II-VI compound semiconductor devices
10/19/2006	US20060231017 Atomic layer deposition methods and chemical vapor deposition methods
10/19/2006	US20060231016 Deposition apparatuses
10/19/2006	US20060231015 Single crystalline diamond and producing method thereof
10/19/2006	DE112004001308T5 Chemischer Bedampfungs-Reaktor Chemical vapor deposition reactor
10/18/2006	EP1712662A1 Substrate for thin-film formation, thin-film substrate and light emitting element

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