| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 01/11/2007 | WO2007005816A2 Low-temperature catalyzed formation of segmented nanowire of dielectric material |
| 01/11/2007 | WO2007005438A2 Apparatuses and methods for detecting defects in semiconductor workpieces |
| 01/11/2007 | WO2006076354A3 Diamond medical devices |
| 01/11/2007 | WO2005122267A8 Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy |
| 01/11/2007 | US20070009658 Pulse nucleation enhanced nucleation technique for improved step coverage and better gap fill for WCVD process |
| 01/11/2007 | US20070006802 N-type bulk single crystal zinc oxide |
| 01/11/2007 | US20070006801 Use of surfactants to control unintentional dopant in semiconductors |
| 01/11/2007 | US20070006800 Methods of selectively forming an epitaxial semiconductor layer using ultra high vacuum chemical vapor deposition technique and batch-type ultra high vacuum chemical vapor deposition apparatus used therein |
| 01/11/2007 | US20070006799 Silicon wafer support fixture with roughended surface |
| 01/11/2007 | US20070006798 Systems and methods for forming strontium-and/or barium-containing layers |
| 01/11/2007 | DE102005031692A1 New high ohmic silicon carbide single crystals, useful as substrates in semiconductor components, have controlled, low content of sulfur as electrically active multiple donor component |
| 01/10/2007 | EP1740742A1 Manufacture of cadmium mercury telluride |
| 01/10/2007 | CN1894774A Strained transistor integration for CMOS |
| 01/10/2007 | CN1894771A Non-polarity (Al, B, Inc, Ga) N Quantum pit |
| 01/10/2007 | CN1894446A Large area, uniformly low dislocation density GaN substrate and process for making the same |
| 01/10/2007 | CN1294617C Assembly comprising heat-distribution plate and edge support |
| 01/09/2007 | US7161173 P-type group II-VI semiconductor compounds |
| 01/09/2007 | US7161148 Tip structures, devices on their basis, and methods for their preparation |
| 01/09/2007 | US7160808 Chuck for supporting wafers with a fluid |
| 01/09/2007 | US7160617 Boron doped diamond |
| 01/09/2007 | US7160585 Magnetic field and an electronic cyclotron resonance zone facilitating ionization and/or dissociation of the injected gas; screening operation |
| 01/04/2007 | US20070004106 Technique for perfecting the active regions of wide bandgap semiconductor nitride devices |
| 01/04/2007 | US20070003696 Formation of thin semiconductor layers by low-energy plasma enhanced chemical vapor deposition and semiconductor heterostructure devices |
| 01/04/2007 | US20070001175 Silicon carbide epitaxial wafer, method for producing such wafer, and semiconductor device formed on such wafer |
| 01/04/2007 | US20070000435 Method of manufacturing a wafer |
| 01/04/2007 | US20070000434 Apparatuses and methods for detecting defects in semiconductor workpieces |
| 01/04/2007 | US20070000433 III-nitride semiconductor device fabrication |
| 01/04/2007 | US20070000432 Method for growth of silicon carbide single crystal, silicon carbide seed crystal, and silicon carbide single crystal |
| 01/03/2007 | EP1738001A2 In situ doped epitaxial films |
| 01/03/2007 | EP1313897B1 Device and method for the deposition of, in particular, crystalline layers on, in particular, crystalline substrates |
| 01/03/2007 | CN1890784A Strained semiconductor substrate and processes therefor |
| 01/02/2007 | US7157344 Vapor-phase growth method, semiconductor manufacturing method and semiconductor device manufacturing method |
| 01/02/2007 | US7157067 Crystallization of a single crystal diamond grown by microwave plasma chemical vapor deposition; heat treatment; noncracking, nonfracturing; hardness |
| 01/02/2007 | US7156916 Monolithic integrated crystal-structure-processed mechanical, and combined mechanical and electrical devices, and methods and systems for making |
| 12/28/2006 | WO2006137631A1 Fabrication method of gallium manganese nitride single crystal nanowire |
| 12/28/2006 | WO2006136929A2 High colour diamond layer |
| 12/28/2006 | WO2006111618A8 Source, an arrangement for installing a source, and a method for installing and removing a source |
| 12/28/2006 | WO2006111617A8 Reactor |
| 12/28/2006 | US20060292874 method for forming tungsten materials during vapor deposition processes |
| 12/28/2006 | US20060292870 chemical-mechanical polishing mixture of a cationic abrasive, a cationic acrylamide-diallyldimethylammonium chloride copolymer and water; pH of 6 or less; selectivity for removal of silicon nitride over removal of silicon oxide |
| 12/28/2006 | US20060289860 Semiconductor layer |
| 12/28/2006 | US20060288929 Polar surface preparation of nitride substrates |
| 12/28/2006 | US20060288928 Perovskite-based thin film structures on miscut semiconductor substrates |
| 12/28/2006 | CA2607202A1 High colour diamond layer |
| 12/27/2006 | EP1736760A2 Nanosensors |
| 12/27/2006 | EP1092233B1 Method of forming a thin film |
| 12/27/2006 | CN1886533A Method for manufacturing diamond coatings |
| 12/27/2006 | CN1885494A InGaN epitaxy film and growth method and application in solar cell |
| 12/27/2006 | CN1885490A Structure for mounting loading table device, processing device, discharge prevention method between feeder lines |
| 12/27/2006 | CN1884636A Beta'-Sialon whisker gas phase reaction preparation method |
| 12/27/2006 | CN1292458C Nitride semiconductor growth method, nitride semiconductor substrate and device |
| 12/27/2006 | CN1292104C Oriented piezoelectric film preparation method, ink jet assembly and its preparation method |
| 12/27/2006 | CN1292103C Process for preparing low-temperature phase barium metaborate monocrystalline film through magnetron sputtering |
| 12/26/2006 | US7154128 Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device |
| 12/26/2006 | US7153368 Susceptor with epitaxial growth control devices and epitaxial reactor using the same |
| 12/26/2006 | US7153363 Atomic layer deposition |
| 12/26/2006 | US7153361 Production method of opto-electronic device array |
| 12/21/2006 | WO2006135662A2 Perovskite-based thin film structures on miscut semiconductor substrates |
| 12/21/2006 | US20060286695 Method for producing semiconductor light emitting device, method for producing semiconductor device, method for producing device, method for growing nitride type iii-v group compound semiconductor layer, method for growing semiconductor layer, and method for growing layer |
| 12/21/2006 | US20060283389 System for growing silicon carbide crystals |
| 12/21/2006 | US20060283380 Semiconductor device and method of manufacturing the same |
| 12/20/2006 | EP1734151A1 A method and system for metalorganic chemical vapour deposition (MOCVD) and annealing of lead germanite (PGO) thin films films |
| 12/20/2006 | EP1266054B1 Graded thin films |
| 12/20/2006 | CN1883032A Process for producing silicon epitaxial wafer |
| 12/20/2006 | CN1882720A Method of producing self-supporting substrates comprising iii-nitrides by means of heteroepitaxy on a sacrificial layer |
| 12/19/2006 | US7151007 Doped organic semiconductor materials and process for their preparation |
| 12/19/2006 | US7150789 Atomic layer deposition methods |
| 12/19/2006 | US7150788 Method for manufacturing in-plane lattice constant adjusting substrate and in-plane lattice constant adjusting substrate |
| 12/14/2006 | WO2006132082A1 Process for producing silicon carbide single crystal |
| 12/14/2006 | WO2006017074A3 Low-doped semi-insulating sic crystals and method |
| 12/14/2006 | WO2005034193A3 Single scan irradiation for crystallization of thin films |
| 12/14/2006 | US20060281322 Epitaxial semiconductor deposition methods and structures |
| 12/14/2006 | US20060281283 Silicon epitaxial wafer, and silicon epitaxial wafer manufacturing method |
| 12/14/2006 | US20060281184 Active pulse monitoring in a chemical reactor |
| 12/14/2006 | US20060280945 Method of synthesising a crystalline material and material thus obtained |
| 12/14/2006 | US20060280668 Free-standing single crystal aluminum nitride (AlN) made using gas transport techniques based on the hydride vapor phase epitaxial (HVPE) approach |
| 12/14/2006 | US20060278865 Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices |
| 12/13/2006 | EP1732111A1 Susceptor |
| 12/13/2006 | EP1731632A2 Nitride semiconductor substrate and method of producing same |
| 12/13/2006 | EP1730072A2 Methods of forming alpha and beta tantalum films with controlled and new microstructures |
| 12/13/2006 | EP1322797B1 Method of growing a thin film onto a substrate |
| 12/13/2006 | CN1879198A Method for manufacturing compound semiconductor epitaxial substrate |
| 12/13/2006 | CN1879197A Formation of lattice-tuning semiconductor substrates |
| 12/13/2006 | CN1877792A Epitaxial layer structure of gallium nitrides compound semiconductor and method for preparing same |
| 12/12/2006 | US7148129 Method of growing selective area by metal organic chemical vapor deposition |
| 12/12/2006 | US7147718 Device and method for the deposition of, in particular, crystalline layers on, in particular, crystalline substrates |
| 12/12/2006 | US7147715 Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen |
| 12/12/2006 | US7147714 Manufacturing method of silicon carbide single crystals |
| 12/12/2006 | US7147710 Method of manufacturing epitaxial silicon wafer |
| 12/07/2006 | US20060275104 Support system for treatment apparatuses |
| 12/07/2006 | US20060273343 A1xInyGa1-x-yN mixture crystal substrate, method of growing same and method of producing same |
| 12/07/2006 | US20060272574 Methods for manufacturing integrated circuits |
| 12/07/2006 | US20060272573 Damage evaluation method of compound semiconductor member, production method of compound semiconductor member, gallium nitride compound semiconductor member, and gallium nitride compound semiconductor membrane |
| 12/07/2006 | US20060272572 Nitride semiconductor substrate and method of producing same |
| 12/07/2006 | US20060272571 Shaped thermally stable polycrystalline material and associated methods of manufacture |
| 12/06/2006 | CN1875461A Methods of selective deposition of heavily doped epitaxial sige |
| 12/06/2006 | CN1288713C Heating system and method of reactor for heating atmosphere |
| 12/05/2006 | US7144818 Semiconductor substrate and processes therefor |
| 12/05/2006 | US7144809 thin metal films by atomic layer deposition: tungsten nucleation layer over a silicon wafer; copper film from CuCl and triethylboron; vapor phase pulses in inert gas |
| 12/05/2006 | US7144457 Methods and devices for analyzing crystalline content of precipitates and crystals without isolation |