| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 03/01/2007 | DE10328842B4 Suszeptor für eine chemische Gasphasenabscheidung, Verfahren zur Bearbeitung einer Halbleiterscheibe durch chemische Gasphasenabscheidung und nach dem Verfahren bearbeitete Halbleiterscheibe Susceptor for a chemical vapor deposition method for processing a semiconductor wafer by chemical vapor deposition and by the process machined wafer |
| 02/28/2007 | EP1757717A1 Method to deposit ZnO-based crystalline layer and substrate for it |
| 02/28/2007 | EP1559133B1 Forced convection assisted rapid thermal furnace |
| 02/28/2007 | EP1159465B1 Method of atomic layer deposition |
| 02/28/2007 | CN1922716A Vapor-phase growth method |
| 02/28/2007 | CN1302529C Three buffer layer method for preparing high quality zinc oxide monocrystalline film |
| 02/28/2007 | CN1302518C High resistivity silicon carbide single crystal and mfg. method |
| 02/28/2007 | CN1302159C Apparatus for growth of monocrystal semiconductor nano wire and use thereof |
| 02/27/2007 | US7183578 Semiconductor apparatus, method for growing nitride semiconductor and method for producing semiconductor apparatus |
| 02/27/2007 | US7183576 Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD |
| 02/27/2007 | US7183208 Methods for treating pluralities of discrete semiconductor substrates |
| 02/27/2007 | US7182812 Direct synthesis of oxide nanostructures of low-melting metals |
| 02/27/2007 | US7182811 Semiconductor light emitting device and method for producing the same |
| 02/22/2007 | US20070042560 Method for growing thin nitride film onto substrate and thin nitride film device |
| 02/22/2007 | US20070040219 III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor wafer |
| 02/21/2007 | EP1654754B1 Gas-supply assembly, in particular for a cvd process reactor for growing an epitaxial layer |
| 02/21/2007 | CN1918697A Process for producing monocrystal thin film and monocrystal thin film device |
| 02/21/2007 | CN1918324A Process kit design for deposition chamber |
| 02/20/2007 | US7179731 Hypercontacting |
| 02/20/2007 | US7179667 Semiconductor base material and method of manufacturing the material |
| 02/20/2007 | US7179329 Methods of hyperdoping semiconductor materials and hyperdoped semiconductor materials and devices |
| 02/15/2007 | WO2007018555A2 Ultratough cvd single crystal diamond and three dimensional growth thereof |
| 02/15/2007 | US20070036921 Diamond |
| 02/15/2007 | US20070036895 Deposition methods utilizing microwave excitation |
| 02/15/2007 | US20070035062 Method and facility for the production of a layer-like part |
| 02/15/2007 | US20070034145 Single crystal of silicon carbide, and method and apparatus for producing the same |
| 02/15/2007 | US20070034144 Oxide crystal growth apparatus and fabrication method using the same |
| 02/15/2007 | US20070034143 Crystal growth apparatus and method of producing a crystal |
| 02/15/2007 | US20070034142 Methods of forming nanocrystals |
| 02/15/2007 | CA2589299A1 Ultratough cvd single crystal diamond and three dimensional growth thereof |
| 02/14/2007 | EP1752567A1 Process for producing wafer of silicon carbide single-crystal |
| 02/14/2007 | EP1752566A1 Nano-crystal diamond film, manufacturing method thereof, and device using nano-crystal diamond film |
| 02/14/2007 | EP1752565A1 Apparatus for measuring semiconductor physical characteristics |
| 02/14/2007 | EP1751329A1 Method of growing sic single crystal and sic single crystal grown by same |
| 02/14/2007 | CN1914126A Method of incorporating a mark in CVD diamond |
| 02/14/2007 | CN1300826C Method for improving hydride gas phase epitaxial growth gallium nitride crystal film surface quanlity |
| 02/14/2007 | CN1300387C Process for non-mask transverse epitaxial growth of high quality gallium nitride |
| 02/13/2007 | US7177377 Avoidance mechanism for co-channel interference in a network |
| 02/13/2007 | US7176499 Method of manufacturing a semiconductor light emitting device, semiconductor light emitting device, method of manufacturing a semiconductor device, semiconductor device, method of manufacturing a device, and device |
| 02/13/2007 | US7176497 Group III nitride compound semiconductor |
| 02/13/2007 | US7176115 Method of manufacturing Group III nitride substrate and semiconductor device |
| 02/13/2007 | US7176054 Method of forming a p-type group II-VI semiconductor crystal layer on a substrate |
| 02/13/2007 | US7175735 Method and apparatus for manufacturing coated conductor |
| 02/13/2007 | US7175709 Epitaxy layer and method of forming the same |
| 02/13/2007 | US7175708 Recovering purified water and potassium chloride from spent basic hydrogen peroxide |
| 02/08/2007 | US20070032052 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices |
| 02/08/2007 | US20070032051 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices |
| 02/08/2007 | US20070032023 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices |
| 02/08/2007 | US20070031991 Method for depositing compounds on a substrate by means of metalorganic chemical vapor deposition |
| 02/08/2007 | US20070028834 Wafer holder for wafer prober and wafer prober equipped with same |
| 02/08/2007 | DE10203833B4 Verfahren und Vorrichtung zur Differenzdruckregelung an Epitaxiereaktoren Method and apparatus for differential pressure control at epitaxy reactors |
| 02/07/2007 | EP1750311A2 Gallium nitride device substrate comprising a gallium nitride based buffer layer and method of manufacturing the same |
| 02/07/2007 | EP1749900A1 Susceptor for vapor deposition apparatus |
| 02/07/2007 | EP1341941B1 Metal strip for epitaxial coatings and method for the production thereof |
| 02/07/2007 | CN1908252A Analogy method of GaAs-based InSb thin film heterogeneity epitaxial growth |
| 02/07/2007 | CN1908251A Method of growing single crystal gan, method of making single crystal gan substrate and single crystal gan substrate |
| 02/07/2007 | CN1908250A Method of preparing room temperature ferromagnetism Zn(1-X)Mn(X)O diluted magnetic semiconductor nano-line |
| 02/06/2007 | US7173285 Lithographic methods to reduce stacking fault nucleation sites |
| 02/06/2007 | US7172957 Method of fabricating n-type semiconductor diamond, and semiconductor diamond |
| 02/06/2007 | US7172813 includes a thin layer of single crystal zinc oxide deposited on an self supporting substrate (crystalline, polycrystalline, and amorphous ) surface by a chemical deposition process |
| 02/06/2007 | US7172654 Preparation of compounds based on phase equilibria of Cu-In-Se |
| 02/01/2007 | US20070026645 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices |
| 02/01/2007 | US20070026644 Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method |
| 02/01/2007 | US20070026643 Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method |
| 02/01/2007 | US20070026150 Substrate processing system |
| 02/01/2007 | US20070022947 Process for preparing p-n junctions having a p-type ZnO film |
| 02/01/2007 | US20070022946 Recovering purified water and potassium chloride from spent basic hydrogen peroxide |
| 02/01/2007 | US20070022945 Methods of fabricating silicon carbide crystals |
| 01/31/2007 | EP1465242B1 Semiconductor wafer and method for producing the same |
| 01/31/2007 | EP1463849B1 Boron doped diamond and method for its production |
| 01/31/2007 | CN1906334A Free-standing diamond structures and methods |
| 01/30/2007 | US7169227 Method for making free-standing AIGaN wafer, wafer produced thereby, and associated methods and devices using the wafer |
| 01/25/2007 | WO2007010645A1 Gallium nitride wafer |
| 01/25/2007 | WO2007010568A1 System for supporting and rotating a susceptor inside a treatment chamber of a water treating apparatus |
| 01/25/2007 | WO2005116304A3 In situ doped epitaxial films |
| 01/25/2007 | US20070020885 Tube Formed of Bonded Silicon Staves |
| 01/25/2007 | US20070020536 Laser beam pattern mask and crystallization method using the same |
| 01/25/2007 | US20070017439 Method of fabricating orientation-controlled single-crystalline wire and method of fabricating transistor having the same |
| 01/25/2007 | US20070017438 Method of forming dislocation-free strained thin films |
| 01/24/2007 | EP1745165A1 Method for producing virtual ge substrates for iii/v-integration on si(001) |
| 01/24/2007 | EP1344246B1 Method for making a substrate in particular for optics, electronics or optoelectronics and resulting substrate |
| 01/24/2007 | CN1902747A Substrate with determinate thermal expansion coefficient |
| 01/24/2007 | CN1900386A Method for epitaxial growing AlxGa1-xN single crystal film on saphire lining bottom material |
| 01/24/2007 | CN1900385A Method and its device for producing single crystal |
| 01/24/2007 | CN1296528C Apparatus and method for diamond production |
| 01/23/2007 | US7166523 Silicon carbide and method of manufacturing the same |
| 01/23/2007 | CA2331893C Fabrication of gallium nitride semiconductor layers by lateral growth from trench sidewalls |
| 01/18/2007 | WO2007009037A1 Structures formed in diamond |
| 01/18/2007 | WO2007008726A2 Use of surfactants to control unintentional dopant in semiconductors |
| 01/18/2007 | WO2007008606A1 Method and system for deposition tuning in an epitaxial film growth apparatus |
| 01/18/2007 | WO2007006525A1 Method and reactor for growing crystals |
| 01/18/2007 | US20070015374 Apparatus and method for atomic layer deposition on substrates |
| 01/18/2007 | US20070012241 Methods of assessing the temperature of semiconductor wafer substrates within deposition apparatuses |
| 01/18/2007 | US20070012240 Light emitting diode with at least two light emitting zones and method for manufacture |
| 01/17/2007 | EP1743961A1 Compound semiconductor substrate |
| 01/17/2007 | EP1203108B1 Cooled window |
| 01/17/2007 | CN1898778A Method for producing group iii nitride crystal, group iii nitride crystal obtained by such method, and group iii nitride substrate using same |
| 01/17/2007 | CN1896344A Method for doping oxygen to gallium nitride crystal and oxygen-doped n-type gallium nitride single crystal substrate |
| 01/17/2007 | CN1896340A Homogeneous-thickness silicon-phase epitaxial-layer growth device and method |
| 01/16/2007 | US7164187 Semiconductor and semiconductor substrate, method of manufacturing the same, and semiconductor device |