| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 04/19/2007 | US20070084398 Monocrystalline diamond layer and method for the production thereof |
| 04/19/2007 | DE10245537B4 Verfahren und Prozessreaktor zur sequentiellen Gasphasenabscheidung mittels einer Prozess- und einer Hilfskammer Method and process for sequential vapor deposition reactor by means of a process and an auxiliary chamber |
| 04/18/2007 | EP1775355A2 Method of growing a gallium nitride single crystal |
| 04/18/2007 | EP1774056A1 Method for the deposition of layers containing silicon and germanium |
| 04/18/2007 | CN1950548A Method of growing SiC single crystal and SiC single crystal grown by same |
| 04/18/2007 | CN1311107C Substrate holder |
| 04/17/2007 | US7205247 Using ozone and a hafnium precursor that is tetrakis(dimethylamino)hafnium (TDMAHf), tetrakis(diethylamino)hafnium (TDEAHf), tetrakis(1-methoxy-2-methylpropoxy)hafnium (Hf(MMP)4, or tetrakis(ethylmethylamino)hafnium (TEMAHf). |
| 04/17/2007 | US7204881 Silicon wafer for epitaxial growth, an epitaxial wafer, and a method for producing it |
| 04/12/2007 | WO2007041381A1 Ultra smooth nanostructured diamond films and compositions and methods for producing same |
| 04/12/2007 | WO2006134194A3 Epitaxial reactor for the large-scale production of wafers |
| 04/12/2007 | US20070082465 Method of fabricating GaN substrate |
| 04/12/2007 | US20070079753 Method To Deposit Functionally Graded Dielectric Films Via Chemical Vapor Deposition Using Viscous Precursors |
| 04/12/2007 | US20070079752 Coloured diamond |
| 04/12/2007 | US20070079751 Inp single crystal, gaas single crystal, and method for production thereof |
| 04/12/2007 | DE19960823B4 Verfahren zur Herstellung einer epitaxierten Halbleiterscheibe und deren Verwendung A process for producing an epitaxially coated semiconductor wafer, and the use thereof |
| 04/12/2007 | DE102006047169A1 Herstellungsverfahren für Halbleitersubstrate Manufacturing processes for semiconductor substrates |
| 04/11/2007 | EP1772538A1 Process and apparatus for producing single crystal |
| 04/11/2007 | EP1437327B1 Method for producing silicon |
| 04/11/2007 | CN1310286C Method of manufacturing III-V family compound semiconductor |
| 04/11/2007 | CN1310284C Crystallization method of amorphous silicon for thin film transistor |
| 04/11/2007 | CN1309861C Device for supplying gas for epitaxial growth |
| 04/10/2007 | US7201886 Single crystal diamond tool |
| 04/10/2007 | US7201799 System and method for classifying, detecting, and counting micropipes |
| 04/05/2007 | WO2007038710A2 Intra-cavity gettering of nitrogen in sic crystal growth |
| 04/05/2007 | WO2007018555A3 Ultratough cvd single crystal diamond and three dimensional growth thereof |
| 04/05/2007 | US20070077192 Tough diamonds and method of making thereof |
| 04/05/2007 | US20070074661 CVD reactor with stabilized process chamber height |
| 04/05/2007 | US20070074652 Method for epitaxy with low thermal budget and use thereof |
| 04/05/2007 | US20070074651 (Al, Ga, In) N-based compound semiconductor and method of fabricating the same |
| 04/05/2007 | DE102005045339A1 Epitaxierte Siliciumscheibe und Verfahren zur Herstellung von epitaxierten Siliciumscheiben Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafers |
| 04/05/2007 | DE102005045338A1 Epitaxierte Siliciumscheibe und Verfahren zur Herstellung von epitaxierten Siliciumscheiben Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafers |
| 04/05/2007 | DE102005045337A1 Epitaxierte Siliciumscheibe und Verfahren zur Herstellung von epitaxierten Siliciumscheiben Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafers |
| 04/04/2007 | EP1415017B1 Rotating susceptor and method of processing substrates |
| 04/04/2007 | CN1942610A Ultrahard diamonds and method of making thereof |
| 04/04/2007 | CN1942604A Inlet system for an MOCVD reactor |
| 04/03/2007 | US7199015 Rare earth-oxides, rare earth-nitrides, rare earth-phosphides and ternary alloys with silicon |
| 04/03/2007 | US7198972 Laser diode having an active layer containing N and operable in a 0.6 μm wavelength band |
| 04/03/2007 | US7198970 Technique for perfecting the active regions of wide bandgap semiconductor nitride devices |
| 04/03/2007 | US7198671 Layered substrates for epitaxial processing, and device |
| 03/29/2007 | WO2007035570A2 Method for epitaxial growth of silicon carbide |
| 03/29/2007 | WO2006085994A3 Multi-component substances and apparatus for preparation thereof |
| 03/29/2007 | US20070072396 Method of producing self supporting substrates comprising iii-nitrides by means of heteroepitaxy on a sacrificial layer |
| 03/29/2007 | US20070071896 Alkyl push flow for vertical flow rotating disk reactors |
| 03/29/2007 | US20070068450 Novel nitrogen semiconductor compound and device fabricated using the same |
| 03/29/2007 | US20070068449 Growing method of SiC single crystal |
| 03/28/2007 | EP1766667A1 METHOD FOR MATERIAL GROWTH OF GaN-BASED NITRIDE LAYER |
| 03/28/2007 | EP1639157B1 Method of synthesising a crystalline material and material thus obtained |
| 03/28/2007 | CN1938822A Susceptor |
| 03/28/2007 | CN1936111A Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafer |
| 03/28/2007 | CN1936110A Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafers |
| 03/28/2007 | CN1936109A Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafers |
| 03/28/2007 | CN1307322C Metal organic chemical vapor deposition for ferroelectric film and annealing treatment |
| 03/27/2007 | US7196399 Epitaxially grown nitride-based compound semiconductor crystal substrate structure with low dislocation density |
| 03/27/2007 | US7195669 Method of producing silicon monocrystal |
| 03/27/2007 | US7195022 Subjecting gallium chloride gas generated through the circulation of hydrogen chloride gas over metallic gallium to vapor phase deposition through the reaction with ammonia gas; moving exhaust gas through piping made of a grounded electroconductive corrosion-resistant material |
| 03/22/2007 | WO2007033312A2 Process for manufacture of super lattice using alternating high and low temperature layers to block parasitic current path |
| 03/22/2007 | US20070062441 Method for epitaxial growth of silicon carbide |
| 03/22/2007 | US20070062440 Gallium nitride crystal substrate and method of producing same |
| 03/22/2007 | US20070062439 Temperature Control Method of Epitaxial Growth Apparatus |
| 03/22/2007 | US20070062438 Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafers |
| 03/22/2007 | DE102006040479A1 Gruppe III-Nitrid Halbleiterdünnfilm, Verfahren zu dessen Herstellung sowie Gruppe III-Nitrid Halbleiterleuchtvorrichtung Group III nitride semiconductor thin film, method for its production as well as group III nitride semiconductor light-emitting device |
| 03/21/2007 | EP1763893A2 Germanium deposition |
| 03/21/2007 | CN1933204A Semiconductor light emitting device and device |
| 03/21/2007 | CN1933203A Semiconductor light emitting device and device |
| 03/21/2007 | CN1933105A Semiconductor device and method for manufacturing the same |
| 03/21/2007 | CN1933099A Method for manufacturing semiconductor device |
| 03/20/2007 | US7192849 Methods of growing nitride-based film using varying pulses |
| 03/20/2007 | US7192482 Seed and seedholder combinations for high quality growth of large silicon carbide single crystals |
| 03/15/2007 | WO2007029269A1 Synthesis of large homoepitaxial monocrystalline diamond |
| 03/15/2007 | WO2006136929A3 High colour diamond layer |
| 03/15/2007 | US20070057276 Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device |
| 03/15/2007 | US20070056507 Sublimation chamber for phase controlled sublimation |
| 03/15/2007 | US20070056506 Process for manufacture of super lattice using alternating high and low temperature layers to block parasitic current path |
| 03/15/2007 | DE10393956T5 Diamantbeschichtetes Silizium und Elektrode A diamond-coated silicon and electrode |
| 03/14/2007 | EP1761945A1 Fabrication of crystalline materials over substrates |
| 03/14/2007 | EP1287188B1 Epitaxial silicon wafer free from autodoping and backside halo |
| 03/14/2007 | CN1930661A Methods for deposition of semiconductor material |
| 03/14/2007 | CN1928166A Method for growing diamond membrane in discontinuous cycling process |
| 03/14/2007 | CN1305191C Prepn. of inner chanber contacting vertical chamber emitting laser by 3-shaft self-aligning process |
| 03/13/2007 | US7189588 Group III nitride semiconductor substrate and its manufacturing method |
| 03/13/2007 | US7189287 Atomic layer deposition using electron bombardment |
| 03/08/2007 | WO2005122691A3 Crystal growth method and apparatus |
| 03/08/2007 | US20070054468 Method for producing silicon epitaxial wafer |
| 03/08/2007 | US20070054425 Apparatus for measuring semiconductor physical characteristics |
| 03/08/2007 | US20070054124 Cvd diamond in wear applications |
| 03/08/2007 | US20070054049 Method of growing a thin film onto a substrate |
| 03/08/2007 | US20070051302 Method of producing crystalline semiconductor material and method of fabricating semiconductor device |
| 03/08/2007 | US20070051301 Method of manufacturing sic single crystal wafer |
| 03/08/2007 | DE19780520B4 Stab aus polykristallinem Silicium und Herstellungsverfahren hierfür Rod of polycrystalline silicon and manufacturing method thereof |
| 03/08/2007 | DE10056645B4 Verfahren zur Herstellung von rißfreien, planaren Gruppe-III-N,Gruppe III-VN und Metall-Stickstoff Bauelementestrukturen auf Si-Substraten mittels epitaktischer Methoden A process for preparing crack-free, planar Group III-N, group III-VN, and metal-nitrogen device structures on Si substrates by means of epitaxial methods |
| 03/07/2007 | EP1215730B1 SiC WAFER, SiC SEMICONDUCTOR DEVICE AND PRODUCTION METHOD OF SiC WAFER |
| 03/07/2007 | EP1178523B1 METHOD FOR GROWING GaN COMPOUND SEMICONDUCTOR CRYSTAL AND SEMICONDUCTOR SUBSTRATE |
| 03/07/2007 | CN1926266A Reduction of carrot defects in silicon carbide epitaxy |
| 03/07/2007 | CN1924116A Process for producing silicon wafer |
| 03/06/2007 | US7186630 Deposition of amorphous silicon-containing films |
| 03/06/2007 | US7186620 Method of making substrates for nitride semiconductor devices |
| 03/06/2007 | US7186582 Providing a chemical vapor deposition chamber having disposed therein a substrate:introducing a gas comprised of a higher-order silane of the formula SinH2n+2 and a germanium precursor to the chamber, wherein n=3 6; and depositing a SiGe-containing film onto the substrate |
| 03/06/2007 | US7186295 Quartz thin film |
| 03/01/2007 | WO2007023722A1 METHOD FOR PRODUCTION OF GaxIn1-xN (0≤x≤1) CRYSTAL, GaxIn1-xN (0≤x≤1) CRYSTAL SUBSTRATE, METHOD FOR PRODUCTION OF GaN CRYSTAL, GaN CRYSTAL SUBSTRATE AND PRODUCT |
| 03/01/2007 | US20070048492 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices |