| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 05/30/2007 | EP1791170A2 Method of manufacturing a substrate, in particular for optics, electronics or optoelectronics, and substrate obtained through said method |
| 05/30/2007 | EP1790757A1 Susceptor |
| 05/30/2007 | EP1220320B1 Sigec semiconductor crystal and production method thereof |
| 05/30/2007 | CN1972880A Method for doping material and doped material |
| 05/30/2007 | CN1972879A Selective doping of a material |
| 05/30/2007 | CN1318661C III-v compound crystal and method for production thereof |
| 05/29/2007 | US7223306 Laser apparatus, laser irradiation method, and manufacturing method of semiconductor device |
| 05/24/2007 | WO2007057519A1 Ald reactor |
| 05/24/2007 | WO2007057518A1 Arrangement in connection with ald reactor |
| 05/24/2007 | WO2007018555B1 Ultratough cvd single crystal diamond and three dimensional growth thereof |
| 05/24/2007 | WO2007008726A3 Use of surfactants to control unintentional dopant in semiconductors |
| 05/24/2007 | WO2006134194B1 Epitaxial reactor for the large-scale production of wafers |
| 05/24/2007 | US20070117383 Precursor material delivery system with staging volume for atomic layer deposition |
| 05/24/2007 | US20070117359 Deposition of amorphous silicon-containing films |
| 05/24/2007 | US20070117358 Epitaxy layer and method of forming the same |
| 05/24/2007 | US20070117357 Method of manufacturing a semiconductor light emitting device, semiconductor light emitting device, method of manufacturing a semiconductor device, semiconductor device, method of manufacturing a device, and device |
| 05/24/2007 | US20070117356 Method of manufacturing single crystalline gallium nitride thick film |
| 05/24/2007 | US20070114566 METHOD FOR MAKING FREE-STANDING AlGaN WAFER, WAFER PRODUCED THEREBY, AND ASSOCIATED METHODS AND DEVICES USING THE WAFER |
| 05/23/2007 | EP1788126A1 Method of manufacturing single crystalline gallium nitride thick film |
| 05/22/2007 | US7221037 Method of manufacturing group III nitride substrate and semiconductor device |
| 05/22/2007 | US7220673 Method for depositing tungsten-containing layers by vapor deposition techniques |
| 05/22/2007 | US7220658 Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy |
| 05/22/2007 | US7220315 Method of producing polycrystalline thin film and method of producing an oxide superconducting element |
| 05/22/2007 | US7220314 Single crystalline aluminum nitride film, method of forming the same, base substrate for group III element nitride film, light emitting device and surface acoustic wave device |
| 05/22/2007 | US7220313 Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient |
| 05/22/2007 | US7220312 Methods for treating semiconductor substrates |
| 05/22/2007 | US7220310 Nanoscale junction arrays and methods for making same |
| 05/22/2007 | CA2294715C Apparatus and method for nucleation and deposition of diamond using hot-filament dc plasma |
| 05/17/2007 | US20070111498 Method of fabricating n-type semiconductor diamond, and semiconductor diamond |
| 05/17/2007 | US20070108450 Reduction of carrot defects in silicon carbide epitaxy |
| 05/17/2007 | US20070107654 High-purity crystal growth |
| 05/17/2007 | US20070107653 Vapor phase growth apparatus and method of fabricating epitaxial wafer |
| 05/16/2007 | EP1784529A1 Manufacture of cadmium mercury telluride on patterned silicon |
| 05/16/2007 | EP1784369A1 Selective doping of a material |
| 05/16/2007 | EP1456436B1 Method for producing particles with diamond structure |
| 05/16/2007 | CN1965390A Epitaxially growing equipment |
| 05/16/2007 | CN1965111A Manufacture of cadmium mercury telluride |
| 05/16/2007 | CN1316567C Preparation of green light gallium nitride base LED epitaxial wafer by adopting multiquantum well |
| 05/16/2007 | CN1316077C Technology for continuous producing four-feet shape zine oxide whisker and rotating furnace thereof |
| 05/15/2007 | US7217324 Method and device for producing an electronic GaAs detector for x-ray detection for imaging |
| 05/15/2007 | US7217323 Equipment and method for manufacturing silicon carbide single crystal |
| 05/15/2007 | US7217322 Method of fabricating an epitaxial silicon-germanium layer and an integrated semiconductor device comprising an epitaxial arsenic in-situ doped silicon-germanium layer |
| 05/10/2007 | US20070105351 GaN single crystal substrate and method of making the same |
| 05/10/2007 | US20070105349 Epitaxial semiconductor structures having reduced stacking fault nucleation sites |
| 05/10/2007 | US20070105305 Method to form large grain size polysilicon films by nuclei-induced solid phase crystallization |
| 05/10/2007 | US20070102790 Process for deposition of semiconductor films |
| 05/10/2007 | US20070102709 P-type group ii-vi semiconductor compounds |
| 05/10/2007 | US20070102111 Controlled nanotube fabrication and uses |
| 05/10/2007 | US20070101931 Method for producing semiconductor crystal |
| 05/10/2007 | US20070101930 Feature forming methods to reduce stacking fault nucleation sites |
| 05/10/2007 | US20070101928 Method of forming a layer of silicon carbide on a silicon wafer |
| 05/09/2007 | EP1783250A2 Semiconductor material, production method thereof and semiconductor device |
| 05/09/2007 | EP1782457A2 Growth of nitride semiconductor crystals |
| 05/09/2007 | CN1961100A Directionally controlled growth of nanowhiskers |
| 05/09/2007 | CN1958887A Single crystalline A-plane nitride semiconductor wafer having orientation flat |
| 05/09/2007 | CN1958879A Method for carrying out epitaxial growth of single crystal film of nitride by using mask in situ |
| 05/09/2007 | CN1958878A Method of using film formation apparatus |
| 05/09/2007 | CN1958877A Periodic monocrystalline Nano structure of castellated ZnO, preparation method |
| 05/09/2007 | CN1958841A Growth of very uniform silicon carbide epitaxial layers |
| 05/08/2007 | US7215411 Method of exposing wafer using scan-type exposure apparatus |
| 05/08/2007 | US7214598 Formation of lattice-tuning semiconductor substrates |
| 05/08/2007 | US7214412 Magenta toner and method for producing same |
| 05/08/2007 | US7214271 Silicon single crystal wafer process apparatus, silicon single crystal wafer, and manufacturing method of silicon epitaxial wafer |
| 05/03/2007 | US20070096321 Conformal lining layers for damascene metallization |
| 05/03/2007 | US20070095276 Synthesis of fibers of inorganic materials using low-melting metals |
| 05/03/2007 | DE102006043991A1 Production of a semiconductor especially a semiconductor laser comprises placing a substrate on a satellite and forming a thin alloy semiconductor layer on the substrate whilst thermal energy is fed to the substrate through the satellite |
| 05/03/2007 | DE10136605B4 Verfahren zum Wachsen von Galliumnitrid-Halbleitermaterial A method of growing gallium nitride semiconductor material |
| 05/02/2007 | EP1780315A2 Boron doped diamond |
| 05/02/2007 | EP1779411A1 Deposition technique for producing high quality compound semiconductor materials |
| 05/02/2007 | EP1778897A1 Iii-nitride materials including low dislocation densities and methods associated with the same |
| 05/02/2007 | EP1778890A1 Method for production of reactors for the decomposition of gases |
| 05/02/2007 | CN1957446A Fabrication of crystalline materials over substrates |
| 05/02/2007 | CN1957116A Nanocrystal diamond film, process for producing the same and apparatus using nanocrystal diamond film |
| 05/02/2007 | CN1956234A Perovskite type oxide material, piezoelectric element using the same, liquid discharge head and liquid discharge apparatus, and manufacturing method |
| 05/02/2007 | CN1956213A Semiconductor material, production method thereof and semiconductor device |
| 05/02/2007 | CN1956145A Semiconductor process chamber |
| 05/02/2007 | CN1313655C Method for growing high-mobility gallium nitride epitaxial film |
| 05/02/2007 | CN1313654C Method for growing high-resistance gallium nitride epitaxial film |
| 05/02/2007 | CN1313653C Growth of very uniform silicon carbide external layers |
| 05/02/2007 | CN1313198C Method for carrying out homogeneous and heterogeneous chemical reactions using plasma |
| 05/01/2007 | US7211769 Heating chamber and method of heating a wafer |
| 05/01/2007 | US7211464 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices |
| 05/01/2007 | US7211337 Compound crystal and method of manufacturing same |
| 05/01/2007 | US7211146 Powder metallurgy crucible for aluminum nitride crystal growth |
| 05/01/2007 | US7211144 Pulsed nucleation deposition of tungsten layers |
| 05/01/2007 | US7211143 Sacrificial template method of fabricating a nanotube |
| 04/26/2007 | US20070092980 Method of fabricating GaN |
| 04/26/2007 | US20070092647 Boron doped diamond |
| 04/26/2007 | US20070089674 Precursor material delivery system with thermal enhancements for atomic layer deposition |
| 04/26/2007 | US20070089669 Apparatus and method for growth of a thin film |
| 04/25/2007 | EP1777325A2 Single crystalline a-plane nitride semiconductor wafer having orientation flat |
| 04/25/2007 | EP1776321A1 Method for doping material and doped material |
| 04/25/2007 | CN1953154A Semiconductor processing |
| 04/25/2007 | CN1312327C Silicon wafer for epitaxial growth, epitaxial wafer, and its manufacturing method |
| 04/25/2007 | CN1312326C Epitaxial silicon wafer free from autodoping and backside halo |
| 04/25/2007 | CN1312318C Method of manufacturing inorganic nanotube |
| 04/24/2007 | US7208422 Plasma processing method |
| 04/19/2007 | US20070087576 Substrate susceptor for receiving semiconductor substrates to be deposited upon |
| 04/19/2007 | US20070087539 Method for manufacturing compound semiconductor epitaxial substrate |
| 04/19/2007 | US20070084404 Reactor surface passivation through chemical deactivation |