Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
07/2007
07/19/2007DE102005031692B4 Verfahren zur Herstellung eines hochohmigen Siliciumcarbid-Einkristalls A process for producing a high-resistance silicon carbide single crystal
07/18/2007EP1807555A2 Crystal growth method and apparatus
07/18/2007EP1807346A2 Ultratouch cvd single crystal diamond and three dimensional growth thereof
07/18/2007CN1327486C Growth GaN film on silicon substrate using hydride vapaur phase epitaxial method
07/18/2007CN1327483C Crystal manufacturing method
07/18/2007CN1327042C Method for growing single-crystal zinc oxide film by using zinc oxide buffer layer
07/17/2007US7244520 Substrate for nitride semiconductor growth
07/17/2007US7244308 Method of manufacturing crystal of III-V compound of the nitride system, crystal substrate of III-V compound of the nitride system, crystal film of III-V compound of the nitride system, and method of manufacturing device
07/12/2007WO2007005816A3 Low-temperature catalyzed formation of segmented nanowire of dielectric material
07/12/2007US20070158766 for forming conductive interconnect layers useful in articles such as semiconductor chips, memory devices, semiconductor dies, circuit modules, and electronic systems
07/12/2007US20070157875 Diamond uses/applications based on single-crystal CVD diamond produced at rapid growth rate
07/12/2007US20070157874 Seed and Seedholder Combinations for High Quality Growth of Large Silicon Carbide single Crystals
07/12/2007US20070157873 Method of fabrication and device comprising elongated nanosize elements
07/12/2007DE10047346B4 Verfahren zur Herstellung eines Siliciumwafers zur Abscheidung einer Epitaxieschicht und Epitaxiewafer A process for producing a silicon wafer for the deposition of an epitaxial layer and epitaxial wafer
07/11/2007EP1806770A1 Gallium nitride wafer
07/11/2007CN1996613A Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
07/11/2007CN1995451A Plasma assisted reaction heat chemical gas phase deposition method for preparing microcrystalline silicon germanium film
07/11/2007CN1326205C Semiconductor films and the manufacturing method, semiconductor equipment, integrated circuits, electrooptics device and electron machine
07/10/2007US7241479 chemical vapor deposition (CVD); nanowires and nanobelts; heating the chamber to a temperature at which the metal becomes molten, and flowing a vapor-phase reactant through the chamber
07/10/2007CA2403310C Single crystal gan substrate, method of growing same and method of producing same
07/05/2007WO2007074027A1 Simplified method of producing an epitaxially grown structure
07/05/2007US20070151508 Zinc oxide nanotip and fabricating method thereof
07/05/2007US20070151507 Crystallization apparatus, crystallization method, device and phase modulation element
07/04/2007EP1803840A2 Method for growing single crystal of silicon carbide
07/04/2007EP1803839A1 Fabrication method and fabrication apparatus of group III nitride crystal substance
07/04/2007CN1993494A Method for production of reactors for the decomposition of gases
07/04/2007CN1992168A Fabrication method and fabrication apparatus of group III nitride crystal substance
07/04/2007CN1324169C Method of manufacturing buried insulating layer type single crystal silicon carbide substrate and equipment
07/04/2007CN1324168C Method for preparing sic crystal and SiC crystal
07/04/2007CN1324163C Chemical vapor deposition unit
07/03/2007US7239804 Cooling device, and apparatus and method for manufacturing image display panel using cooling device
07/03/2007US7238970 Semiconductor device and method for fabricating the same
07/03/2007US7238595 Epitaxial semiconductor deposition methods and structures
07/03/2007US7238232 Growth of textured gallium nitride thin films on polycrystalline substrates
07/03/2007US7237606 Wafer supporter
06/2007
06/28/2007WO2007072984A1 Semiconductor substrate manufacturing method and element structure manufacturing method
06/28/2007WO2007072855A1 Apparatus for manufacturing semiconductor thin film
06/28/2007WO2007071771A1 Method for making a composite substrate and composite substrate according to said method
06/28/2007US20070148374 Method of incorporating a mark in cvd diamond
06/28/2007US20070148079 Thick single crystal diamond layer method for making it and gemstones produced from the layer
06/27/2007EP1801269A1 Process for producing a free-standing III-N layer, and free-standing III-N substrate
06/27/2007EP1543181B1 Single crystal diamond
06/27/2007EP1532292B1 Atomic deposition layer methods
06/27/2007CN1988113A Process for selective masking of iii-n layers and for the preparation of free-standing iii-n layers or of devices, and products obtained thereby
06/26/2007US7235486 Method for forming tungsten materials during vapor deposition processes
06/26/2007US7235462 Methods for fabricating a substrate
06/26/2007US7235139 Wafer carrier for growing GaN wafers
06/26/2007US7235131 Method for forming a single crystalline film
06/26/2007US7235130 Apparatus and method for diamond production
06/26/2007US7235129 Substrate having a zinc oxide nanowire array normal to its surface and fabrication method thereof
06/21/2007WO2007068756A1 Process for growth of low dislocation density gan
06/21/2007WO2007038710A3 Intra-cavity gettering of nitrogen in sic crystal growth
06/21/2007WO2005029542A3 Apparatus and method for point-of-use treatment of effluent gas streams
06/21/2007US20070141258 Methods of growing nitride-based film using varying pulses
06/21/2007US20070140671 Cooling Device, and Apparatus and Method for Manufacturing Image Display Panel Using Cooling Device
06/21/2007US20070137555 Deposition of low resistivity, highly conformal tungsten nucleation layers which serve as seed layers for the deposition of a tungsten bulk layer; process is performed without the use of a borane as a reducing agent
06/20/2007CN1985029A Low-doped semi-insulating SIC crystals and method
06/20/2007CN1984839A Methods of forming alpha and beta tantalum films with controlled and new microstructures
06/20/2007CN1982213A Nozzle of polycrystalline-silicon furnace
06/20/2007CN1322551C Vapor phase epitaxial apparatus and vapor phase epitaxial method
06/20/2007CN1322178C Coloured diamond
06/20/2007CN1322177C Method for developping directionally aligning carbon nanometer tube array on silicon substrate
06/19/2007US7232488 Method of fabrication of a substrate for an epitaxial growth
06/14/2007US20070134816 Atomic layer deposition using electron bombardment
06/14/2007US20070134419 Density-matching alkyl push flow for vertical flow rotating disk reactors
06/14/2007US20070134417 decomposing the precursor of indium, and chemical vapor depositing iridium on the substrate in an oxidizing ambient environment which contain an oxidizing gas such as oxygen, ozone, air, and nitrogen oxide; precursors include Lewis base stabilized Ir(I) beta -diketonates
06/14/2007US20070134413 Vapor deposition method and vapor deposition apparatus
06/14/2007US20070131160 Doped aluminum nitride crystals and methods of making them
06/13/2007EP1794254A2 Photonic crystal, conjugated polymers suitable for photonic crystals, and a method for synthesizing conjugated polymers
06/13/2007EP1214190A4 Silicon carbide epitaxial layers grown on substrates offcut towards 1100
06/13/2007CN1979887A Self-standing gan single crystal substrate, method of making same, and method of making a nitride semiconductor device
06/13/2007CN1979775A Method for using alpha polycrystal silicon in integrated circuit
06/13/2007CN1978714A Method for cracking source oven molecular beam epitaxial indium phosphide using solid-state phosphorus
06/13/2007CN1978713A Method for growing ZnO mono-crystalline by closed pipe chemical vapour transmission
06/13/2007CN1321227C Boron doped diamond
06/12/2007US7230274 Reduction of carrot defects in silicon carbide epitaxy
06/12/2007US7229501 Silicon epitaxial wafer and process for manufacturing the same
06/12/2007US7229500 Methods and devices for high throughput crystallization
06/12/2007US7229499 Manufacturing method for semiconductor device, semiconductor device and semiconductor wafer
06/12/2007US7229497 Having a narrow and controllable size distribution and are prepared by a continuous flow method involving heating a mixture of an M-source and an X donor in a fluid in a reaction zone to a growth temperature andcooling the mixture below the growth temperature to stop growth of the nanocrystals.
06/12/2007US7229493 3-5 group compound semiconductor, process for producing the same, and compound semiconductor element using the same
06/07/2007US20070128844 Non-polar (a1,b,in,ga)n quantum wells
06/07/2007US20070128359 Production apparatus for producing gallium nitride film semiconductor and cleaning apparatus for exhaust gas
06/07/2007US20070126023 Growth of reduced dislocation density non-polar gallium nitride
06/07/2007US20070125996 Crystal firm, crystal substrate, and semiconductor device
06/06/2007CN1977359A 氮化镓晶圆 GaN wafers
06/06/2007CN1975992A Semiconductor device fabrication method and electronic device fabrication method
06/06/2007CN1320603C Epitaxial semiconductor on insulator (SOI) structures and devices
06/06/2007CN1320174C Susceptor with epitaxial growth control devices and epitaxial reactor using the same
06/05/2007US7227189 Vapor-phase growth method for a nitride semiconductor and a nitride semiconductor device
06/05/2007US7227188 Large grain size polysilicon films formed by nuclei-induced solid phase crystallization
06/05/2007US7226849 Method of producing integrated semiconductor components on a semiconductor substrate
06/05/2007US7226643 Thermal pyrolysising chemical vapor deposition method for synthesizing nano-carbon material
06/05/2007US7226640 Decomposing an iridium precursor, especially a Lewis base stabilized Ir(I) B-diketonates, in an oxidizing atmosphere
06/05/2007US7226509 Method for fabricating a carrier substrate
06/05/2007US7226508 Quartz glass crucible and method for the production thereof
06/05/2007CA2258080C Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device
05/2007
05/31/2007US20070122989 Epitaxial and polycrystalline growth of si1-x-ygexcy and si1-ycy alloy layers on si by uhv-cvd
05/31/2007US20070119367 Method for producing silicon epitaxial wafer and silicon epitaxial wafer
05/30/2007EP1791171A1 Epitaxial crystal growing method
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