| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 09/13/2007 | US20070209578 Method for producing substrate for single crystal diamond growth |
| 09/13/2007 | US20070209577 Low micropipe 100 mm silicon carbide wafer |
| 09/13/2007 | US20070209576 Formation of metal oxide nanowire networks (nanowebs) of low-melting metals |
| 09/13/2007 | DE102006010273A1 Production of strained layer on strain-compensated layer stacks with small defect density, comprises arranging relaxed silicon-germanium buffer layer on silicon substrate and arranging intermediate layer on relaxed buffer layer |
| 09/12/2007 | EP1832672A1 Single-crystal diamond |
| 09/12/2007 | EP1831437A1 Cvd reactor comprising an rf-heated treatment chamber |
| 09/12/2007 | EP1660702B1 A method of fabricating an epitaxially grown layer |
| 09/12/2007 | EP1633911B1 Method of forming a layer of silicon carbide on a silicon wafer |
| 09/12/2007 | CN101036215A Chemical vapor deposition reactor |
| 09/12/2007 | CN100337338C Semiconductor device and semiconductor substrate |
| 09/12/2007 | CN100337310C Low-resistance n type semiconductor diamond and process for producing the same |
| 09/12/2007 | CN100337308C GaN single crystal base, nitride type semiconductor optical growth base, nitride type semiconductor device and its producing method |
| 09/12/2007 | CN100336943C Diamond single crystal composite substrate and method for manufacturing the same |
| 09/12/2007 | CN100336942C Method for growing high crystal quality indium nitride single-crystal epitaxial film |
| 09/11/2007 | US7269343 Heating configuration for use in thermal processing chambers |
| 09/06/2007 | US20070205481 Manufacturing method for semiconductor device, semiconductor device and semiconductor wafer |
| 09/06/2007 | US20070204791 Drop Tube Granulated Crystal Manufacturing Device and Granulated Crystal Manufacturing Method |
| 09/05/2007 | EP1828444A2 Topotactic anion exchange oxide films and method of producing the same |
| 09/05/2007 | EP1479056B1 Device for depositing thin layers with a wireless detection of process parameters |
| 09/05/2007 | CN100335889C Evaporating/ feeding system for organic metal compound |
| 09/04/2007 | US7265420 Semiconductor substrate layer configured for inducement of compressive or expansive force |
| 09/04/2007 | US7265029 Fabrication of substrates with a useful layer of monocrystalline semiconductor material |
| 09/04/2007 | US7264750 Single crystal ingot doped with Cerium, Europium, Terbium or Ytterbium; crystal face is composed of a plurality of smooth partial region surfaces |
| 08/29/2007 | EP1158077B1 Method and apparatus for producing single crystal of silicon carbide |
| 08/29/2007 | CN101024895A Epitaxial wafer and method for production of epitaxial wafer |
| 08/29/2007 | CN100334262C Method for producing single crystal of multi- element oxide single crystal containing bismuth as constituting element |
| 08/28/2007 | US7261777 Method for fabricating an epitaxial substrate |
| 08/28/2007 | US7261776 Deposition of buffer layers on textured metal surfaces |
| 08/23/2007 | WO2007018555A8 Ultratough cvd single crystal diamond and three dimensional growth thereof |
| 08/23/2007 | US20070197022 Manufacture Of Cadmium Mercury Telluride |
| 08/23/2007 | US20070196942 Method for producing group III nitride crystal, group III nitride crystal obtained by such method, and group III nitride substrate using the same |
| 08/23/2007 | US20070196743 Method for crystallizing amorphous silicon into polysilicon and mask used therefor |
| 08/23/2007 | US20070193505 Apparatus and method for diamond production |
| 08/23/2007 | US20070193503 Method of fabricating polycrystalline silicon plates |
| 08/23/2007 | US20070193502 Method of producing fine particle-like materials, and fine particle-link materials |
| 08/23/2007 | DE102006055895A1 Ätzbeständiges Heizgerät und Zusammenbau desselben The same etch-heater and Assembly |
| 08/22/2007 | EP1821339A1 GaN crystal substrate and method of manufacturing the same, and method of manufacturing semiconductor device |
| 08/22/2007 | EP1820887A2 Gallium nitride crystal substrate and method of producing same |
| 08/22/2007 | CN1333438C Coaxial air intake for acquiring uniform wide-band gap semiconductor thin film |
| 08/22/2007 | CN1333117C Method for developping directionally aligning zinc oxide nanometer rod array on silicon substrate |
| 08/22/2007 | CN101023028A Ultratough cvd single crystal diamond and three dimensional growth thereof |
| 08/21/2007 | US7259436 Micromechanical component and corresponding production method |
| 08/21/2007 | US7259108 Methods for fabricating strained layers on semiconductor substrates |
| 08/21/2007 | US7258807 Controlled growth of gallium nitride nanostructures |
| 08/21/2007 | US7258743 Composite structure with a uniform crystal orientation and the method of controlling the crystal orientation of one such structure |
| 08/21/2007 | US7258742 Method of manufacturing potassium niobate single crystal thin film, surface acoustic wave element, frequency filter, frequency oscillator, electronic circuit, and electronic apparatus |
| 08/21/2007 | US7258741 System and method for producing synthetic diamond |
| 08/21/2007 | US7258739 Process for producing epitaxial silicon wafer and silicon wafer produced by process thereof |
| 08/16/2007 | WO2007091920A2 A method of growing semiconductor heterostructures based on gallium nitride |
| 08/16/2007 | WO2007091638A1 Susceptor and apparatus for manufacturing epitaxial wafer |
| 08/16/2007 | US20070190757 Vapor phase growth method |
| 08/16/2007 | US20070190248 Thin metal films by atomic layer deposition: tungsten nucleation layer over a silicon wafer; copper film from CuCl and triethylboron; vapor phase pulses in inert gas |
| 08/16/2007 | US20070187700 Method of manufacturing group III nitride substrate and semiconductor device |
| 08/16/2007 | US20070186858 Susceptor |
| 08/16/2007 | DE10009876B4 Verfahren zum Bilden eines einkristallinen Films A method for forming a single-crystal film |
| 08/15/2007 | EP1818429A2 Method of growing single crystal GaN, method of making single crystal GaN substrate and single crystal GaN substrate |
| 08/15/2007 | EP1817440A1 Method and device for the deposition of gallium nitrite layers on a sapphire substrate and associated substrate holder |
| 08/15/2007 | CN1332077C Lithium niobate substrate and manufacturing method thereof |
| 08/14/2007 | US7256466 Nanosensors |
| 08/14/2007 | US7256110 Crystal manufacturing method |
| 08/14/2007 | US7255746 Nitrogen sources for molecular beam epitaxy |
| 08/14/2007 | US7255744 Low-resistivity n-type semiconductor diamond and method of its manufacture |
| 08/09/2007 | US20070184567 Method for material growth of gan-based nitride layer |
| 08/09/2007 | US20070183964 Nano-fiber or nano-tube comprising v group transition metal dichalcogenide crystals, and method for preparation thereof |
| 08/09/2007 | US20070183960 Carbon fiber precursor fiber bundle, production method and production device therefor, and carbon fiber and production method therefor |
| 08/09/2007 | US20070181057 Epitaxial deposition process and apparatus |
| 08/08/2007 | EP1815042A2 Diamond coated surfaces |
| 08/08/2007 | EP1358683B1 Method and device for producing an electronic gaas detector for x-ray detection for imaging |
| 08/08/2007 | CN2931505Y Apparatus for eliminating slip line and high stress region in silicon gas phase epitaxial layer |
| 08/08/2007 | CN1331235C N-type semiconductor diamond producing method and semiconductor diamond |
| 08/08/2007 | CN1331195C Method of producing integrated semiconductor components on a semiconductor substrate |
| 08/08/2007 | CN1330800C Acicular silicon crystal and process for producing the same |
| 08/07/2007 | US7253499 III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor wafer |
| 08/07/2007 | CA2453922C Oxide high-critical temperature superconductor acicular crystal and method for producing the same |
| 08/02/2007 | WO2007087589A2 Silicon carbide formation by alternating pulses |
| 08/02/2007 | US20070175384 Method of fabricating a quasi-substarte wafer and semiconductor body fabricated using such a quasi-substarte wafer |
| 08/01/2007 | EP1812618A2 Cvd doped structures |
| 08/01/2007 | EP1215730B9 SiC WAFER, SiC SEMICONDUCTOR DEVICE AND PRODUCTION METHOD OF SiC WAFER |
| 08/01/2007 | CN1329955C Method of preparing high quality non-polar GaN self-support substrate |
| 08/01/2007 | CN1329954C Process for producing an epitaxial layer of gallium nitride and photoelectric parts including it |
| 08/01/2007 | CN1329561C A substrate for epitaxy and a method of preparing the same |
| 08/01/2007 | CN1329560C Method for producing by vapour-phase epitaxy a gallium nitride film with low defect density |
| 08/01/2007 | CN101008080A Film-forming device |
| 07/31/2007 | US7250083 ALD method and apparatus |
| 07/26/2007 | US20070170428 Thin film material and method of manufacturing the same |
| 07/26/2007 | US20070169688 Method for manufacturing silicon wafer |
| 07/26/2007 | US20070169687 Silicon carbide formation by alternating pulses |
| 07/26/2007 | DE102006003464A1 Verfahren zur Erzeugung einer Siliciumschicht auf einer Substratoberfläche durch Gasphasenabscheidung A method for producing a silicon film on a substrate surface by vapor deposition |
| 07/25/2007 | CN1328418C Process for Li doping growing P type ZnO Single Crystal film |
| 07/25/2007 | CN1328417C Method for by composition cladding germanium nanometer wire |
| 07/25/2007 | CN1328410C Low-pressure metal organic chemical vapour phase depositing apparatus for zinc oxide and process thereof |
| 07/25/2007 | CN101006548A Deposition technique for producing high quality compound semiconductor materials |
| 07/25/2007 | CN101003912A Method for synthesizing ordered array of single crystal Sic Nano filament with small diameter through heat evaporation method |
| 07/24/2007 | US7247583 Manufacturing method for strained silicon wafer |
| 07/24/2007 | US7247581 Methods for treating pluralities of discrete semiconductor substrates |
| 07/24/2007 | US7247513 Dissociation of silicon clusters in a gas phase during chemical vapor deposition homo-epitaxial growth of silicon carbide |
| 07/19/2007 | US20070163504 Vapor phase growth apparatus |
| 07/19/2007 | US20070163490 Process for selective masking of iii-n layers and for the preparation of free-standing iii-n layers or of devices, and products obtained thereby |
| 07/19/2007 | US20070163489 Method of forming a layer having a single crystalline structure |
| 07/19/2007 | US20070163488 Method of growing oxide thin films |