C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth

Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
11/2007
11/14/2007	CN100348969C Evaporating/ feeding system for liquid organic metal compound
11/13/2007	US7294207 Gas-admission element for CVD processes, and device
11/13/2007	US7294202 Process for manufacturing self-assembled nanoparticles
11/13/2007	US7294201 Method of manufacturing crystal of III-V compound of the nitride system, crystal substrate of III-V compound of the nitride system, crystal film of III-V compound of the nitride system, and method of manufacturing device
11/13/2007	US7294200 Method for producing nitride semiconductor crystal, and nitride semiconductor wafer and nitride semiconductor device
11/08/2007	WO2007125914A1 Method for manufacturing gallium nitride crystal and gallium nitride wafer
11/08/2007	WO2007066215A3 High crystalline quality synthetic diamond
11/08/2007	US20070259510 Semiconductor device, semiconductor layer and production method thereof
11/08/2007	US20070256627 Method of ultra-shallow junction formation using si film alloyed with carbon
11/08/2007	DE69837289T2 Vorrichtung zur Förderung von Chemischen Wirkstoffen Device for conveying chemical agents
11/08/2007	DE102007013167A1 Gruppe III-Nitrid-Halbleiterdünnfilm und Gruppe III-Nitrid-Halbleiterleuchtvorrichtung Group III nitride semiconductor thin film and group III nitride semiconductor light-emitting device
11/07/2007	EP1852407A1 Tantalum carbide-covered carbon material and process for producing the same
11/07/2007	CN100347821C Producing method for compound semiconductor layer and luminescent device, gas phase producing apparatus
11/06/2007	US7291224 Covering assembly for crucible used for evaporation of raw materials
11/06/2007	US7291223 Epitaxial organic layered structure and method for making
11/06/2007	US7291220 Process of producing silicon wafer
11/06/2007	US7291218 Method of fabricating orientation film for liquid crystal display device
11/01/2007	WO2005052998A3 Gas distribution showerhead featuring exhaust apertures
11/01/2007	US20070254481 Method for forming tungsten materials during vapor deposition processes
11/01/2007	US20070252136 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
11/01/2007	US20070251445 forming a tantalum containing multilayer film, using a radio frequency power to perform plasma enhanced atomic layer deposition; semiconductor integrated circuit; forming tantalum, tantalum nitride, tantalum carbonitride
10/2007
10/31/2007	DE102006019881A1 Production of silicon nitride layer with high intrinsic compressive bracing, comprises forming transistor element on substrate with gate electrode structure, and forming silicon nitride materials in the proximity to the gate electrode
10/31/2007	CN101064258A Method of forming highly orientated silicon film, method of manufacturing three-dimensional semiconductor device, and three-dimensional semiconductor device
10/31/2007	CN101063233A Equipment for growth of horizontal chromium doped semi-insulation gallium arsenide
10/31/2007	CN101063226A Electron tubes type equipment for preparing nano material
10/31/2007	CN101063225A Single crystal gan substrate, method of growing same and method of producing same
10/30/2007	US7288830 III-V nitride semiconductor substrate and its production method
10/30/2007	US7288791 Epitaxial wafer and method for manufacturing method
10/30/2007	US7288430 Method of fabricating heteroepitaxial microstructures
10/30/2007	US7288153 Method of fabricating orientation film for crystal display device
10/25/2007	WO2007121270A1 Epitaxial growth of iii-nitride compound semiconductors structures
10/25/2007	WO2007119319A1 Gallium nitride material and method for producing same
10/24/2007	EP1846596A2 Method of making substitutionally carbon-highly doped crystalline si-layers by cvd
10/24/2007	EP1846595A1 Selective deposition of silicon-containing films
10/24/2007	EP1846321A1 Method of fabricating a silicon-on-insulator structure
10/24/2007	EP1481117B1 Method and device for depositing semi-conductor layers
10/24/2007	EP1190120A4 Compound gas injection system and methods
10/24/2007	CN101060102A Nitride semiconductor substrate, method of making the same and epitaxial substrate for nitride semiconductor light emitting device
10/24/2007	CN100345255C Vapor phase growth method for Al-containing III-V group compound semiconductor, and method and device for producing Al-containing III-V group compound semiconductor
10/23/2007	US7285500 Thin films and methods of making them
10/18/2007	WO2007117894A1 Thermal processing furnace, gas delivery system therefor, and methods for delivering a process gas thereto
10/18/2007	WO2007091920A3 A method of growing semiconductor heterostructures based on gallium nitride
10/18/2007	WO2006113539A3 Semiconductor devices having gallium nitride epilayers on diamond substrates
10/17/2007	CN101057008A Method for growing Si-Ge semiconductor materials and devices on substrates
10/17/2007	CN101054720A Method of manufacturing substrates for the growth of single crystal diamond
10/17/2007	CN101054718A System and method for varying wafer surface temperature via wafer-carrier temperature offset
10/17/2007	CN100344004C GaN single crystal substrate and method of making the same
10/17/2007	CN100343424C Method for manufacturing a free-standing substrate made of monocrystalline semi-conductor material
10/16/2007	US7282738 Fabrication of crystalline materials over substrates
10/16/2007	US7282381 Method of producing self supporting substrates comprising III-nitrides by means of heteroepitaxy on a sacrificial layer
10/16/2007	US7282379 Nitride semiconductor, semiconductor device, and method of manufacturing the same
10/16/2007	US7282096 Arrangement comprising a support body and a substrate holder which is driven in rotation and gas-supported thereon
10/11/2007	US20070235653 Manufacture of Cadmium Mercury Telluride on Patterned Silicon
10/11/2007	US20070234949 Atomic layer deposited titanium-doped indium oxide films
10/10/2007	EP1842943A1 Nanowire composite and preparation method thereof
10/10/2007	EP1842941A1 Method for forming a group III nitride material on a silicon substrate
10/10/2007	EP1842940A1 Method for forming a group III nitride material on a silicon substrate
10/10/2007	EP1842227A2 Diamond medical devices
10/10/2007	EP1841902A1 Method for the production of c plane-oriented gan substrates or alxga1-xn substrates
10/10/2007	CN101050545A Method for developing aluminum nitride crystal in large size through flow of plasma flame
10/09/2007	US7279047 Reactor for extended duration growth of gallium containing single crystals
10/04/2007	WO2007033312A3 Process for manufacture of super lattice using alternating high and low temperature layers to block parasitic current path
10/04/2007	US20070227441 Method of manufacturing epitaxial silicon wafer and apparatus thereof
10/04/2007	CA2646893A1 Chemically attached diamondoids for cvd diamond film nucleation
10/03/2007	EP1840979A2 Semiconductor layer, process for forming the same, and semiconductor light emitting device
10/03/2007	EP1840249A2 Silicone carbide film and method for manufacturing the same
10/03/2007	EP1840243A2 Susceptor for epitaxial growth and epitaxial growth method
10/03/2007	EP1840241A2 Atomic deposition layer methods
10/03/2007	EP1838893A1 Thin films prepared with gas phase deposition technique
10/03/2007	EP1305161B1 Electronic and optical materials
10/03/2007	EP1177153B1 Bulk synthesis of long nanotubes of transition metal chalcogenides
10/03/2007	CN101045997A Equipment and process for preparing monocrystalline GaN film material
10/03/2007	CN100341116C Porous substrate and its manufacturing method, and GaN semiconductor multilayer substrate and its manufacturing method
10/02/2007	US7276779 III-V group nitride system semiconductor substrate
10/02/2007	US7276124 Reactor having a movable shutter
10/02/2007	US7276121 Forming improved metal nitrides
10/02/2007	US7276117 Method of forming semi-insulating silicon carbide single crystal
09/2007
09/27/2007	WO2007107757A2 Growth method using nanostructure compliant layers and hvpe for producing high quality compound semiconductor materials
09/27/2007	US20070221119 Method of Sic Single Crystal Growth and Sic Single Crystal
09/26/2007	EP1299900A4 METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((Al,In,Ga)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES
09/26/2007	CN101043001A Vapor-phase epitaxial growth method and vapor-phase epitaxy apparatus
09/26/2007	CN100339942C Gas driven planetary rotation apparatus and methods for forming silicon carbide layers
09/26/2007	CN100339503C Silicon carbide-coated carbonaceous material and carbonaceous material to be coated with silicon carbide
09/25/2007	US7273799 Deposition over mixed substrates
09/25/2007	US7273664 Preparation method of a coating of gallium nitride
09/25/2007	US7273657 Electronics, opto-electronic, magneto-electronics and magneto-optics devices, single crystal, integrated circuits
09/20/2007	US20070218688 Method for depositing tungsten-containing layers by vapor deposition techniques
09/20/2007	US20070215035 Method for Producing Compound Single Crystal and Production Apparatus for Use Therein
09/20/2007	DE19913123B4 Kristallwachstumsverfahren für Dünnfilme aus BiSrCaCuO-Oxiden Crystal growth method for thin films of oxides BiSrCaCuO
09/20/2007	DE102007011347A1 Nitridhalbleitereinkristallfilm Nitridhalbleitereinkristallfilm
09/19/2007	EP1368505B1 A ccvd method for producing tubular carbon nanofibers
09/19/2007	CN101037806A Chromatic carbon silicon stone monocrystal and preparation method thereof and preparation of artificial gem
09/19/2007	CN101037793A Device and method for high-speed rapid growth of diamond single-crystal
09/19/2007	CN100338734C Susceptor, vapor phase growth device, device and method of manufacturing epitaxial wafer, and epitaxial wafer
09/18/2007	US7271077 Deposition methods with time spaced and time abutting precursor pulses
09/18/2007	US7270708 Susceptor, vapor phase growth apparatus, epitaxial wafer manufacturing apparatus, epitaxial wafer manufacturing method, and epitaxial wafer
09/13/2007	WO2007102781A1 Method for metal-free synthesis of epitaxial semiconductor nanowires on si
09/13/2007	US20070212543 Coloured diamond
09/13/2007	US20070209589 Slab cross flow cvd reactor
09/13/2007	US20070209580 Seed crystal fixing apparatus and a method for fixing the seed crystal

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