| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 01/03/2008 | US20080000414 Simultaneous irradiation of a substrate by multiple radiation sources |
| 01/03/2008 | DE102006030268A1 Reduction of surface of silicon structure comprises exposing out the surface of silicon structure at oxygen, and carrying out thermal oxidation and plasma reinforced oxidation between a material of the silicon structure and the oxygen |
| 01/03/2008 | DE10196361B4 Verfahren zur Herstellung eines Gruppe-III-Nitrid-Halbleiterkristalls A method for producing a group III nitride semiconductor crystal |
| 01/02/2008 | EP1873280A1 Oxygen-doped N-type gallium nitride single crystal substrate and method for producing the same |
| 01/02/2008 | EP1871928A1 Method for producing iii-n layers, and iii-n layers or iii-n substrates, and devices based thereon |
| 01/02/2008 | EP1871923A1 Source, an arrangement for installing a source, and a method for installing and removing a source |
| 01/02/2008 | EP1070161B1 A method and a device for epitaxial growth of objects by chemical vapour deposition |
| 01/02/2008 | CN200999271Y Rotating device for silicon carbide epitaxial growth heater |
| 01/02/2008 | CN100359648C Method for growing a monocrystalline oxide on semiconductor device |
| 01/02/2008 | CN100359638C Methods of hyperdoping semiconductor materials and hyperdoped semiconductor materials and devices |
| 01/01/2008 | US7315050 Semiconductor device, semiconductor layer and production method thereof |
| 01/01/2008 | US7315045 Sapphire/gallium nitride laminate having reduced bending deformation |
| 01/01/2008 | US7314526 Reaction chamber for an epitaxial reactor |
| 01/01/2008 | US7314521 Low micropipe 100 mm silicon carbide wafer |
| 01/01/2008 | US7314520 Low 1c screw dislocation 3 inch silicon carbide wafer |
| 01/01/2008 | US7314519 Vapor-phase epitaxial apparatus and vapor phase epitaxial method |
| 12/27/2007 | US20070297775 Heating Configuration for Use in Thermal Processing Chambers |
| 12/27/2007 | DE102006056390A1 Crucible for making semiconductor material crystals, e.g. gallium arsenide in molecular beam epitaxy, comprises at least two parts, base and top joined at circumference forming a joint, where crucible is provided with coating layer |
| 12/26/2007 | CN101094732A Deposition of silicon-containing films from hexachlorodisilane |
| 12/26/2007 | CN101092738A Optical method and system for monitoring in-situ stress in use for epitaxial growth |
| 12/26/2007 | CN101091893A Vacuum tube furnace for preparing Nano material |
| 12/26/2007 | CN100358105C Method for preparing Poly-SiGe film |
| 12/26/2007 | CN100357499C Method of preparing room temperature ferromagnetism Zn(1-X)Mn(X)O diluted magnetic semiconductor nano-line |
| 12/25/2007 | US7311775 Method for heat-treating silicon wafer and silicon wafer |
| 12/21/2007 | WO2007145474A1 Method for continual preparation of polycrystalline silicon using a fluidized bed reactor |
| 12/20/2007 | US20070292987 Method Of Fabricating Strained Thin Film Semiconductor Layer |
| 12/20/2007 | US20070290408 Annealing single crystal chemical vapor deposition diamonds |
| 12/20/2007 | US20070289526 Multi-piece ceramic crucible and method for making thereof |
| 12/20/2007 | DE60127252T2 Epitaktischer siliziumwafer frei von selbstdotierung und rückseitenhalo Epitaxial silicon wafer itself free from doping and, back halo |
| 12/20/2007 | DE19649508B4 Halter für Halbleiterplatten Holders for semiconductor wafers |
| 12/20/2007 | DE102007021944A1 Free-standing gallium nitride semiconductor substrate useful in light emitting device, comprises free standing compound semiconductor crystal based on nitride |
| 12/19/2007 | EP1867760A2 Method for manufacturing diamond single crystal substrate, and diamond single crystal substrate |
| 12/19/2007 | EP1866465A2 Reaction system for growing a thin film |
| 12/19/2007 | EP1215310B1 p-TYPE SINGLE CRYSTAL ZINC OXIDE HAVING LOW RESISTIVITY AND METHOD FOR PREPARATION THEREOF |
| 12/19/2007 | CN200994109Y 12-phase controllable high power crystal growth equipment heating power circuit |
| 12/19/2007 | CN100356506C Crystal mask, amorphous silicon crystallization method and method of manufacturing array base plate using same |
| 12/18/2007 | US7309477 Single crystal diamond grown by microwave plasma chemical vapor deposition and annealed at pressures in excess of 4.0 GPa and a temperature in excess of 1500 degrees C. to have a hardness in excess of 120 GPa. |
| 12/18/2007 | US7309476 Diamondoid-based components in nanoscale construction |
| 12/18/2007 | US7309392 Lithium niobate substrate and method of producing the same |
| 12/13/2007 | WO2007143743A2 High volume delivery system for gallium trichloride |
| 12/13/2007 | WO2007050133A3 Method and composition for adhering materials together |
| 12/13/2007 | US20070287268 Vapor-phase growth method, semicondutor manufacturing method and semiconductor device manufacturing method |
| 12/13/2007 | US20070286952 Method and Structure of Strain Control of Sige Based Photodetectors and Modulators |
| 12/13/2007 | US20070283881 System and method for producing synthetic diamond |
| 12/13/2007 | US20070283880 Apparatus and method for the production of bulk silicon carbide single crystals |
| 12/12/2007 | EP1865095A2 Method of growing gallium nitride crystal |
| 12/12/2007 | EP1865091A2 High flow GaCI3 delivery |
| 12/12/2007 | CN101086963A Method of growing gallium nitride crystale |
| 12/12/2007 | CN101086083A Method for preparing group III nitride substrate |
| 12/12/2007 | CN100355028C Vapor phase epitaxy device |
| 12/11/2007 | US7306675 Method for manufacturing semiconductor substrate |
| 12/06/2007 | US20070281481 Controlled growth of gallium nitride nanostructures |
| 12/06/2007 | US20070281156 Nanoscale wires and related devices |
| 12/06/2007 | US20070280848 Methods Of Forming Alpha And Beta Tantalum Films With Controlled And New Microstructures |
| 12/06/2007 | US20070277731 Method and apparatus for growing GaN bulk single crystals |
| 12/05/2007 | EP1581667B1 Support system for a treatment apparatus |
| 12/04/2007 | US7303990 Nickel-silicon compound forming method, semiconductor device manufacturing method, and semiconductor device |
| 12/04/2007 | US7303979 Vapor-phase growth method, semiconductor manufacturing method and semiconductor device manufacturing method |
| 12/04/2007 | US7303790 Electron cyclotron resonance plasma deposition process and device for single-wall carbon nanotubes and nanotubes thus obtained |
| 12/04/2007 | US7303632 Vapor assisted growth of gallium nitride |
| 12/04/2007 | US7303631 Selective growth of ZnO nanostructure using a patterned ALD ZnO seed layer |
| 12/04/2007 | US7303630 Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate |
| 12/04/2007 | US7303629 Apparatus for pulling single crystal |
| 12/04/2007 | US7303627 Method for making low-stress large-volume not-(111)-oriented crystals with reduced stress birefringence and more uniform refractive index and crystals made thereby |
| 11/29/2007 | WO2007091920B1 A method of growing semiconductor heterostructures based on gallium nitride |
| 11/28/2007 | CN100352004C Substrate for growing gallium nitride, itsproducing method and method for preparing gallium nitride substrate |
| 11/28/2007 | CN100352002C Method of growing nitride single crystal, nitride semiconductor light emitting device, method of manufacturing the same |
| 11/28/2007 | CN100351169C Nano-fiber or nano-tube comprising v group transition metal dichalcogenide crystals, and method for preparation thereof |
| 11/27/2007 | US7301199 Nanoscale wires and related devices |
| 11/27/2007 | US7300519 Reduction of subsurface damage in the production of bulk SiC crystals |
| 11/22/2007 | WO2007133358A2 Semiconductor buffer structures |
| 11/22/2007 | WO2007133025A1 Apparatus and methods for preparation of high-purity silicon rods using mixed core means |
| 11/22/2007 | WO2007131900A1 Source container of a vpe reactor |
| 11/22/2007 | WO2007131547A1 Semiconductor control device for a cvd or rtp process |
| 11/22/2007 | WO2007131343A1 Low-temperature doping processes for silicon wafer devices |
| 11/22/2007 | WO2006094313A3 Forming method for polymeric laminated wafers comprising different film materials |
| 11/22/2007 | US20070269983 Ald Apparatus and Method |
| 11/22/2007 | US20070269960 Fabrication of substrates with a useful layer of monocrystalline semiconductor material |
| 11/22/2007 | US20070266934 Method of forming a silicon dioxide film |
| 11/22/2007 | US20070266933 Manufacturing method of semiconductor device |
| 11/22/2007 | US20070266932 Vapor phase growth apparatus and method for vapor phase growth |
| 11/22/2007 | DE102006022534A1 Quellenbehälter einse VPE-Reaktors Source container einse VPE reactor |
| 11/22/2007 | CA2661047A1 Low-temperature doping processes for silicon wafer devices |
| 11/21/2007 | EP1374291B1 Deposition method over mixed substrates using trisilane |
| 11/21/2007 | CN101075556A Method for growing semiconductor crystal with third-family nitride as material on silicon substrate and its device |
| 11/21/2007 | CN100350082C System for growing silicon carbide crystals |
| 11/20/2007 | US7297625 Group III-V crystal and manufacturing method thereof |
| 11/15/2007 | WO2007130916A2 A method of ultra-shallow junction formation using si film alloyed with carbon |
| 11/15/2007 | WO2007128522A2 Process for producing a iii-n bulk crystal and a free-standing iii -n substrate, and iii -n bulk crystal and free-standing ih-n substrate |
| 11/15/2007 | WO2007107757A3 Growth method using nanostructure compliant layers and hvpe for producing high quality compound semiconductor materials |
| 11/15/2007 | US20070261633 GaN crystal substrate and method of manufacturing the same, and method of manufacturing semiconductor device |
| 11/14/2007 | EP1854904A1 Apparatus for measuring semiconductor physical characteristics |
| 11/14/2007 | EP1376665B1 Gaseous phase growing device |
| 11/14/2007 | CN101072900A CVD reactor comprising an rf-heated treatment chamber |
| 11/14/2007 | CN101071794A III-V crystal and production method |
| 11/14/2007 | CN101070617A Method for preparing briented growth dielectric-constant adjustable strontium lead titanate film |
| 11/14/2007 | CN101070614A Single-crystal zinc-oxide nano column array and preparing method |
| 11/14/2007 | CN101070612A Method for preparing tin-oxide mono-crystal film |
| 11/14/2007 | CN101070611A Gallium-nitride metal organic-matter chemical gas-phase depositing apparatus for super-high vertical reactor |
| 11/14/2007 | CN100349271C Process for growing high crystalline quality zinc oxide thin film on silicon substrate under low temperature |