| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 04/23/2008 | CN101167190A Diamond transistor and method of manufacture thereof |
| 04/23/2008 | CN101165225A IC sheet epitaxy technique |
| 04/22/2008 | US7361578 Method to form large grain size polysilicon films by nuclei-induced solid phase crystallization |
| 04/22/2008 | US7361222 Device and method for producing single crystals by vapor deposition |
| 04/22/2008 | US7361221 Light irradiation apparatus, crystallization apparatus, crystallization method, semiconductor device and light modulation element |
| 04/22/2008 | US7361220 Method of manufacturing group III nitride single crystal, device used for the method and group III nitride single crystal obtained by the method |
| 04/17/2008 | WO2008045423A1 Self assembled controlled luminescent transparent conductive photonic crystals for light emitting devices |
| 04/17/2008 | US20080090390 Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device |
| 04/17/2008 | US20080090386 Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device |
| 04/17/2008 | US20080090328 Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device |
| 04/17/2008 | US20080090327 Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device |
| 04/17/2008 | US20080089831 high carrier concentration and low resistivity |
| 04/16/2008 | EP1673306B1 Method for the synthesis of filament structures on a nanometre scale and electronic components comprising such structures |
| 04/16/2008 | EP1563121A4 Method for forming carbon nanotubes |
| 04/16/2008 | CN101163818A Reactor |
| 04/16/2008 | CN101163815A Source, an arrangement for installing a source, and a method for installing and removing a source |
| 04/16/2008 | CN100381619C Semiconductor substrate, semiconductor device, light emitting diode and producing method therefor |
| 04/15/2008 | US7358166 Relaxed, low-defect SGOI for strained Si CMOS applications |
| 04/15/2008 | US7358159 Method for manufacturing ZnTe compound semiconductor single crystal ZnTe compound semiconductor single crystal, and semiconductor device |
| 04/15/2008 | US7357837 GaN single crystal substrate and method of making the same |
| 04/10/2008 | WO2008042590A2 Batch reaction chamber employing separate zones for radiant heating and resistive heating |
| 04/10/2008 | US20080085233 Single crystal diamond |
| 04/10/2008 | US20080083910 an element of III of periodic table, selected from Al, Ga and In, in a reactor for hydride vapor phase epitaxy (HVPE), a common source and/or a common feed line is/are provided in the HVPE reactor for both elements and dopant, and a halide reaction gas is introduce to form halide mixed product |
| 04/10/2008 | US20080083366 Micropipe-free silicon carbide and related method of manufacture |
| 04/10/2008 | DE112006000464T5 Chemischer Bedampfungs-Reaktor mit einer Vielzahl von Einlässen Chemical vapor deposition reactor comprising a plurality of inlets |
| 04/10/2008 | DE102006028137B4 Verfahren zur Herstellung einer Nitrid-basierten Verbindungsschicht, eines GaN-Substrats und einer Nitrid-basierten Halbleiter-Leuchtvorrichtung mit vertikaler Struktur A method of manufacturing a nitride-based compound layer, a GaN substrate and a nitride-based semiconductor light-emitting device having a vertical structure |
| 04/09/2008 | EP1907609A1 Method and reactor for growing crystals |
| 04/09/2008 | EP1154049B1 Method of manufacturing single-crystal silicon carbide |
| 04/09/2008 | CN101159228A Processing gas supplying mechanism, supplying method and gas processing unit |
| 04/09/2008 | CN101158049A Method for preparing P-type transparent conductive oxide CuAlO2 film |
| 04/09/2008 | CN100380675C High voltage micro-electronics device including GaN |
| 04/09/2008 | CN100380588C Preparation method of coating of gallium nitride |
| 04/09/2008 | CN100380586C Method and apparatus for manufacturing single crystal silicon carbide |
| 04/09/2008 | CN100379901C III-V nitride substrate boule and its manufacturing method and use |
| 04/09/2008 | CN100379678C Chemical mix and delivery systems and methods thereof |
| 04/08/2008 | US7355216 Fluidic nanotubes and devices |
| 04/08/2008 | US7354850 Directionally controlled growth of nanowhiskers |
| 04/08/2008 | US7354622 Method for forming thin film and apparatus for forming thin film |
| 04/08/2008 | US7354477 Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate |
| 04/03/2008 | WO2008039912A2 Retro-emission systems comprising microlens arrays and luminescent emitters |
| 04/03/2008 | WO2008038084A1 Process for producing a silicon carbide substrate for microelectronic applications |
| 04/03/2008 | US20080081015 First crystal by flux method; supply nitride gas into melt mixture containing metal sodium and metal gallium; crystal is sliced and polished to form wafers; growing unit grows a second crystal on a substrate formed using gallium nitride wafer; hydride vapor phase epitaxy; producing a bulked crystal. |
| 04/03/2008 | US20080079024 Semiconductor heterostructures having reduced dislocation pile-ups and related methods |
| 04/03/2008 | DE102006045834A1 Verfahren zum Herstellen eines Halbleitermaterials A method of manufacturing a semiconductor material |
| 04/02/2008 | EP1905066A1 Structures formed in diamond |
| 04/02/2008 | EP1905063A1 System for supporting and rotating a susceptor inside a treatment chamber of a water treating apparatus |
| 04/02/2008 | EP1397827B1 Arrangement comprising a support body with a substrate holder mounted thereon on a gas bearing with rotating drive |
| 04/02/2008 | CN100378255C Growth control method for A-plane and M-plane GaN film material |
| 04/01/2008 | US7351993 Rare earth-oxides, rare earth-nitrides, rare earth-phosphides and ternary alloys with silicon |
| 04/01/2008 | US7351347 Gallium-nitride deposition substrate, method of manufacturing gallium-nitride deposition substrate, and method of manufacturing gallium nitride substrate |
| 04/01/2008 | CA2352985C Large-size monoatomic and monocrystalline layer, made of diamond-type carbon and device for making same |
| 03/27/2008 | WO2008035632A1 PROCESS FOR PRODUCING GaN SINGLE-CRYSTAL, GaN THIN-FILM TEMPLATE SUBSTRATE AND GaN SINGLE-CRYSTAL GROWING APPARATUS |
| 03/27/2008 | US20080073645 Thin films and methods of making them |
| 03/27/2008 | US20080072823 Self aligning non contact shadow ring process kit |
| 03/27/2008 | US20080072819 Metal oxide films |
| 03/27/2008 | US20080072818 Growing a desired portion of the nanowire, growing a sacrificial portion of the nanowire that is doped differently than the desired portion, differentially removing the sacrificial portion, and removing a growth stub from the desired portion, especially by etching |
| 03/27/2008 | US20080072817 Silicon carbide single crystals with low boron content |
| 03/27/2008 | US20080072816 Crystalline structure and method of fabrication thereof |
| 03/27/2008 | DE102007043840A1 Wafer bearbeitende Hardware für das epitaktische Abscheiden mit reduzierter Autodotierung und weniger Störstellen auf der Rückseite Wafer machined hardware for the epitaxial deposition of reduced autodoping and less rough spots on the back |
| 03/27/2008 | DE10120295B4 Gerät und Prozess zur Gasphasenbeschichtung Device and process for gas-phase coating |
| 03/26/2008 | EP1903618A1 Method for producing trialkyl gallium |
| 03/26/2008 | CN101150055A Making method for large-area 3C-SiC thin film of MEMS part |
| 03/26/2008 | CN101148780A Method for preparing twist silicon nitride ceramics crystal whisker |
| 03/26/2008 | CN101148776A Epitaxy growth method for gallium antimonide on gallium arsenide substrate |
| 03/26/2008 | CN100377306C Non-polar single crystalline A-plane nitride semiconductor wafer and preparation method thereof |
| 03/26/2008 | CN100376477C Growth apparatus of carson nanotube array and growth method of multi-wall carbon nanotube array |
| 03/25/2008 | US7348200 Method of growing non-polar a-plane gallium nitride |
| 03/25/2008 | CA2406347C Gan substrate, method of growing gan and method of producing gan substrate |
| 03/20/2008 | WO2007143743A3 High volume delivery system for gallium trichloride |
| 03/20/2008 | WO2007092893A3 Materials and methods for the manufacture of large crystal diamonds |
| 03/20/2008 | US20080070397 Methods for Selective Placement of Dislocation Arrays |
| 03/20/2008 | US20080069953 three gas inlet zones disposed vertically one above the other, located between the ceiling and the heated floor; vapor deposition of semiconductor crystalline layers; reduce the horizontal extent of the inlet zone |
| 03/20/2008 | US20080067543 Method of manufacturing single crystalline gallium nitride thick film |
| 03/20/2008 | US20080066680 Sequential chemical vapor deposition |
| 03/20/2008 | DE102006039956A1 Atomic layer deposition of hafnium oxide or hafnium silicon oxide, involves depositing material on substrate using hafnium precursor, fluctuating process temperature of substrate between low and high temperatures after heating |
| 03/19/2008 | EP1901358A1 Method of fabricating light emitting device |
| 03/19/2008 | EP1901335A1 Heating device of the light irradiation type |
| 03/19/2008 | EP1900857A1 Method of manufacturing single crystalline gallium nitride thick film |
| 03/19/2008 | EP1900856A2 Silicon carbide manufacturing device and method of maufacturing silicon carbide |
| 03/19/2008 | EP1328014B1 Semiconductor base material and method of manufacturing the material |
| 03/19/2008 | CN101145516A Silicon base nitride single crystal thin film epitaxial structure and growth method |
| 03/19/2008 | CN101144182A Method of growing gallium nitride crystal |
| 03/19/2008 | CN101144181A Film formation apparatus for semiconductor process and method for using the same |
| 03/18/2008 | US7344753 Noncatalytically forming a nanowire on a substrate from an organometallic vapor without any type of reducing agent; use of Copper (ethylacetoacetate)trialkyl phosphite as copper precursor for example; integrated circuits |
| 03/18/2008 | US7344597 Vapor-phase growth apparatus |
| 03/13/2008 | WO2008029589A1 Method and equipment for producing group-iii nitride |
| 03/13/2008 | WO2008028522A1 A method of synthesizing semiconductor nanostructures and nanostructures synthesized by the method |
| 03/13/2008 | US20080063584 Aluminum Gallium Nitride; HVPE Hydride Vapor Phase Epitaxy; carrier gas is inert gas and hydrogen at partial pressure of 0 to <0.1 atm; relationship between reactant feed ratio and ratio of grown crystal made linear thereby enhancing control of crystal composition; large-size thick film substrate crystal |
| 03/13/2008 | DE102006041513A1 Hochtemperatur-Schichtsupraleiteraufbau und Verfahren zu seiner Herstellung High-temperature layer superconductor structure and process for its preparation |
| 03/13/2008 | CA2662594A1 Method and apparatus for producing a group iii nitride |
| 03/12/2008 | EP1898446A2 Substrate processing method, substrate processing apparatus, and program storage medium |
| 03/12/2008 | EP1778890B1 Method for production of reactors for the decomposition of gases |
| 03/12/2008 | EP1614166A4 Fluidic nanotubes and devices |
| 03/12/2008 | EP1583858A4 Sacrificial template method of fabricating a nanotube |
| 03/12/2008 | CN201033809Y Situ stress optical monitoring apparatus for epitaxial growth |
| 03/11/2008 | US7341929 Method to fabricate patterned strain-relaxed SiGe epitaxial with threading dislocation density control |
| 03/06/2008 | US20080057197 Chemical vapor deposition reactor having multiple inlets |
| 03/06/2008 | US20080054412 Reduction of carrot defects in silicon carbide epitaxy |
| 03/06/2008 | US20080053371 Silicon carbide manufacturing device and method of manufacturing silicon carbide |
| 03/05/2008 | CN101136324A Semiconductor manufacturing method and semiconductor laser device manufacturing method |