| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 03/04/2008 | US7338902 Epitaxial growth method and substrate for epitaxial growth |
| 03/04/2008 | US7338555 Highly crystalline aluminum nitride multi-layered substrate and production process thereof |
| 02/28/2008 | WO2008023774A1 Method for producing nitride semiconductor and nitride semiconductor device |
| 02/28/2008 | US20080050929 Method of and Apparatus for Low-Temperature Epitaxy on a Plurality of Semiconductor Substrates |
| 02/28/2008 | US20080050894 Preparation method of a coating of gallium nitride |
| 02/28/2008 | US20080050688 System and Process for Heating Semiconductor Wafers by Optimizing Absorption of Electromagnetic Energy |
| 02/28/2008 | US20080050599 Crystal film, crystal substrate, and semiconductor device |
| 02/28/2008 | US20080048207 Preparation method of a coating of gallium nitride |
| 02/28/2008 | DE10335460B4 Verfahren zum Betreiben einer CVD-Anlage A method of operating a CVD system |
| 02/27/2008 | EP1891663A1 Method for production of silicon carbide layer, gallium nitride semiconductor device and silicon substrate |
| 02/27/2008 | EP1502303A4 High voltage switching devices and process for forming same |
| 02/27/2008 | CN100372063C Group III nitride semiconductor substrate and its manufacturing method |
| 02/26/2008 | US7335908 Nanostructures and methods for manufacturing the same |
| 02/21/2008 | US20080044339 Thick single crystal diamond layer method for making it and gemstones produced from the layer |
| 02/21/2008 | DE102007027446A1 Halbleitersubstrat auf Gruppe-III-V-Nitrid-Basis und lichtemittierende Vorrichtung auf Gruppe-III-V-Nitrid-Basis Semiconductor substrate to the Group III-V nitride-based light emitting device and the group III-V nitride-based |
| 02/20/2008 | EP1890344A1 Method of fabricating light emitting device |
| 02/20/2008 | EP1889953A1 Process for producing silicon carbide single crystal |
| 02/20/2008 | EP1226395A4 Hot wall rapid thermal processor |
| 02/20/2008 | CN101127380A ZnO nano structure vertical on silicon/insulation layer structure underlay and its making method |
| 02/19/2008 | US7332417 Semiconductor structures with structural homogeneity |
| 02/19/2008 | US7332038 Device for depositing in particular crystalline layers on one or more, in particular likewise crystalline substrates |
| 02/19/2008 | US7332032 Precursor mixtures for use in preparing layers on substrates |
| 02/19/2008 | US7332031 Bulk single crystal gallium nitride and method of making same |
| 02/19/2008 | US7332027 Method for manufacturing aluminum nitride single crystal |
| 02/14/2008 | WO2008018760A1 Method and apparatus for preparation of granular polysilicon |
| 02/14/2008 | WO2008018613A1 Semiconductor manufacturing apparatus |
| 02/14/2008 | WO2008017320A1 Method for producing a doped iii-n solid crystal and a free-standing doped iii-n substrate, and doped iii-n solid crystal and free-standing doped iii-n substrate |
| 02/14/2008 | US20080038580 Group III-V Crystal |
| 02/14/2008 | US20080038524 Selective Doping of a Material |
| 02/13/2008 | EP1887617A2 Deposition method over mixed substrates using trisilane |
| 02/13/2008 | EP1885917A1 Device for introducing reaction gases into a reaction chamber and epitaxial reactor which uses said device |
| 02/13/2008 | EP1138060B1 Gas driven rotating susceptor for rapid thermal processing (rtp) system |
| 02/13/2008 | CN101121108A Vacuum processing apparatus |
| 02/13/2008 | CN100368080C Process for preparing carbon nano tube and carbon onion by Ni/Al catalyst chemical gas phase deposition |
| 02/12/2008 | US7329593 Germanium deposition |
| 02/12/2008 | US7329590 Method for depositing nanolaminate thin films on sensitive surfaces |
| 02/12/2008 | US7329554 Reactive codoping of GaAlInP compound semiconductors |
| 02/07/2008 | WO2008016650A2 Methods of forming carbon-containing silicon epitaxial layers |
| 02/07/2008 | WO2007107757B1 Growth method using nanostructure compliant layers and hvpe for producing high quality compound semiconductor materials |
| 02/07/2008 | US20080032880 Process For Manufacturing Wafer Of Silicon Carbide Single Crystal |
| 02/07/2008 | US20080032040 Wafer Support and Semiconductor Substrate Processing Method |
| 02/07/2008 | US20080029021 Method for forming pecvd silicon nitride film |
| 02/06/2008 | EP1884580A2 Method of growing gallium nitride crystal |
| 02/06/2008 | CN101120124A Process for producing silicon carbide single crystal |
| 02/06/2008 | CN101120122A Gas distribution showerhead featuring exhaust apertures |
| 02/06/2008 | CN101118865A Substrate support with a protective layer for plasma resistance |
| 02/06/2008 | CN101117727A Gas phase crystal growth pressure automatic control system |
| 02/06/2008 | CN100367509C High-resisting silicon carbide substrate for semiconductor devices with high breakdown voltage |
| 02/05/2008 | US7326652 Atomic layer deposition using photo-enhanced bond reconfiguration |
| 02/05/2008 | US7326295 Fabrication method for polycrystalline silicon thin film and apparatus using the same |
| 02/05/2008 | US7326293 Patterned atomic layer epitaxy |
| 01/31/2008 | WO2008013108A1 Process for producing single-crystal substrate with off angle |
| 01/31/2008 | US20080023710 Method of growing a nitride single crystal on silicon wafer, nitride semiconductor light emitting diode manufactured using the same and the manufacturing method |
| 01/31/2008 | US20080022926 Reactor for extended duration growth of gallium containing single crystals |
| 01/31/2008 | US20080022925 Method for marking a crystalline material using cathodoluminescence |
| 01/31/2008 | US20080022924 Methods of forming carbon-containing silicon epitaxial layers |
| 01/31/2008 | US20080022923 Seed holder for crystal growth reactors |
| 01/30/2008 | EP1882757A1 Metal organic chemical vapor deposition equipment |
| 01/30/2008 | CN201012941Y Graphite boat used in production of silicon chip |
| 01/29/2008 | US7323256 Uncut single crystal III-V nitride (optionally doped) having a large area of at least 15 cm2 on a face and a uniformly low dislocation density not exceeding 3x106 dislocations per cm2 of growth surface area on the face; wafers for microelectronic and opto-electronic devices |
| 01/29/2008 | US7323051 One hundred millimeter single crystal silicon carbide wafer |
| 01/29/2008 | US7323050 Method of producing lithium tantalate crystal |
| 01/24/2008 | WO2008011022A1 Method of manufacturing substrates having improved carrier lifetimes |
| 01/24/2008 | WO2008009805A1 Method for the growth of indium nitride |
| 01/24/2008 | US20080020212 Seed crystal consisting of silicon carbide carbide single crystal and method for producing ingot using the same |
| 01/24/2008 | DE102006034061A1 Polysilanverarbeitung und Verwendung Polysilanverarbeitung and use |
| 01/24/2008 | CA2657929A1 Method of manufacturing substrates having improved carrier lifetimes |
| 01/23/2008 | EP1601807A4 Free-standing diamond structures and methods |
| 01/23/2008 | EP1404902A4 High surface quality gan wafer and method of fabricating same |
| 01/23/2008 | EP1268882A4 Axial gradient transport apparatus and process for producing large size, single crystals of silicon carbide |
| 01/23/2008 | CN101111628A Method and apparatus for monolayer deposition (mld) |
| 01/23/2008 | CN100363536C Deposition methods utilizing phased array microwave excitation, and deposition apparatuses |
| 01/17/2008 | WO2008008407A1 Wide bandgap semiconductor materials |
| 01/17/2008 | WO2004109775A3 Formation of highly dislocation free compound semiconductor on a lattice mismatched substrate |
| 01/17/2008 | US20080014725 Deposition over mixed substrates using trisilane |
| 01/17/2008 | US20080014723 Iii-v nitride semiconductor substrate and its production method |
| 01/17/2008 | US20080011223 Solid solution wide bandgap semiconductor materials |
| 01/17/2008 | DE102006032636A1 Verfahren zum Herstellen eines Keramiksubstrats sowie Keramiksubstrat A method of manufacturing a ceramic substrate and the ceramic substrate |
| 01/16/2008 | CN101106079A A growth method of silicon germanium material |
| 01/16/2008 | CN101104952A High doping concentration silicon carbide epitaxial growth method |
| 01/16/2008 | CN101104949A Zn(1-x)Mn(x)O crystal thin film with cube phase and rock salt ore structure |
| 01/15/2008 | US7318865 Crystallization apparatus and method; manufacturing method of electronic device, electronic device, and optical modulation element |
| 01/10/2008 | WO2008004657A1 p-TYPE ZINC OXIDE THIN FILM AND METHOD FOR FORMING THE SAME |
| 01/10/2008 | WO2007133358A3 Semiconductor buffer structures |
| 01/10/2008 | WO2007128522A3 Process for producing a iii-n bulk crystal and a free-standing iii -n substrate, and iii -n bulk crystal and free-standing ih-n substrate |
| 01/10/2008 | US20080010707 Ambient environment nanowire sensor |
| 01/10/2008 | US20080008460 System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy |
| 01/10/2008 | US20080006201 Method of growing gallium nitride crystal |
| 01/10/2008 | US20080006200 Method and apparatus for producing large, single-crystals of aluminum nitride |
| 01/10/2008 | DE102006030869A1 Production of a semiconductor wafer useful in e.g. chip cards, comprises applying a semiconductor layer epitaxially on a surface of a semiconductor substrate, and partially removing the substrate from the semiconductor layer |
| 01/09/2008 | EP1875512A1 Diamond transistor and method of manufacture thereof |
| 01/09/2008 | EP1874979A1 Reactor |
| 01/09/2008 | EP1751329B1 Method of sic single crystal growth and sic single crystal |
| 01/09/2008 | CN100360721C Method for mfg. ZnTe compound semiconductor single crystal ZnTe compound semiconductor single crystal, and semiconductor device |
| 01/08/2008 | US7317202 Method for manufacture of an epitaxial structural element layer sequence and optoelectronic semiconductor chip |
| 01/08/2008 | US7316747 Seeded single crystal silicon carbide growth and resulting crystals |
| 01/03/2008 | WO2007088420A3 Differentiated-temperature reaction chamber |
| 01/03/2008 | US20080003786 Large area, uniformly low dislocation density gan substrate and process for making the same |
| 01/03/2008 | US20080003162 Control the diameter of SiC nanowhisker by pre-depositing a metal thin film on silicon substrate and controlling the thickness of thin film; reacting silicon substrate with hydrogen and hydrocarbon plasma; light emitters; low cost, emits visible light of various wavelengths |
| 01/03/2008 | US20080001174 directly and securely contact an aluminum alloy film with pixel electrodes and achieve a low electrical resistivity between the pixel electrodes even when a low thermal processing temperature is used; display panels; lower power consumption |