| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 06/18/2008 | EP1933368A2 Rapid conductive cooling using a secondary process plane |
| 06/18/2008 | EP1702357B1 Substrate with determinate thermal expansion coefficient |
| 06/18/2008 | CN101203939A Diamond medical devices |
| 06/18/2008 | CN101203633A Device for introducing reaction gases into a reaction chamber and epitaxial reactor which uses said device |
| 06/18/2008 | CN100395379C Epitaxial growth process of high-crystallinity monocrystal indium nitride film |
| 06/18/2008 | CN100395378C Preparation method for large-particle monocrystal diamond by DC plasma sedimentation |
| 06/17/2008 | US7387835 Silicon carbide-coated carbonaceous material and carbonaceous material to be coated with silicon carbide |
| 06/17/2008 | US7387687 Support system for a treatment apparatus |
| 06/17/2008 | US7387679 Silicon carbide single crystal and method and apparatus for producing the same |
| 06/17/2008 | US7387678 GaN substrate and method of fabricating the same, nitride semiconductor device and method of fabricating the same |
| 06/17/2008 | US7387677 Substrate for epitaxy and method of preparing the same |
| 06/17/2008 | CA2346308C Simulated diamond gemstones formed of aluminum nitride and aluminum nitride:silicon carbide alloys |
| 06/12/2008 | WO2008067854A1 Method for manufacturing a single crystal of nitride by epitaxial growth on a substrate preventing growth on the edges of the substrate |
| 06/12/2008 | US20080138518 Atomic Layer Epitaxy; feed reactants as vapor-phase pulses repeatedly and alternately from a separate source into reaction space; first reactant is zinc, zinc chloride,tetramethyl aluminum; second reactant is water, sulfur, hydrogen sulfide, ammonia; purge with inert gas between vapor depositions |
| 06/12/2008 | US20080135875 RELAXED LOW-DEFECT SGOI FOR STRAINED Si CMOS APPLICATIONS |
| 06/12/2008 | US20080135830 Semiconductor structures with structural homogeneity |
| 06/12/2008 | US20080134976 Apparatus for Forming Thin Film |
| 06/12/2008 | US20080134959 Diamond semiconductor element and process for producing the same |
| 06/12/2008 | US20080134957 Powder metallurgy crucible for aluminum nitride crystal growth |
| 06/11/2008 | EP1930485A1 METHOD FOR PRODUCTION OF GaxIn1-xN (0 x 1) CRYSTAL, GaxIn1-xN (0 x 1) CRYSTAL SUBSTRATE, METHOD FOR PRODUCTION OF GaN CRYSTAL, GaN CRYSTAL SUBSTRATE AND PRODUCT |
| 06/11/2008 | EP1929064A1 Ultra smooth nanostructured diamond films and compositions and methods for producing same |
| 06/11/2008 | CN201071403Y Upward-in and upward-out vertically spraying type MOCVD reactor |
| 06/11/2008 | CN100394550C Coated semiconductor wafer, and process and device for producing the semiconductor wafer |
| 06/11/2008 | CN100394549C Semiconductor layer |
| 06/11/2008 | CN100393922C Method of fabricating an epitaxially grown layer |
| 06/10/2008 | US7385267 Nanosensors |
| 06/10/2008 | US7384668 CCVD method for producing tubular carbon nanofibers |
| 06/10/2008 | US7384481 Method of forming a rare-earth dielectric layer |
| 06/05/2008 | WO2008042590A3 Batch reaction chamber employing separate zones for radiant heating and resistive heating |
| 06/05/2008 | US20080132044 Nitride Semiconductor Device Manufacturing Method |
| 06/05/2008 | US20080132040 Deposition Technique for Producing High Quality Compound Semiconductor Materials |
| 06/05/2008 | US20080128863 Fabrication method of semiconductor device and semiconductor device |
| 06/05/2008 | US20080127894 Housing assembly for an induction heating device including liner or susceptor coating |
| 06/04/2008 | CN101194053A Method for producing gaxin1-xn(0<=x<=1=1) crystal, gaxin1-xn(0<=x<=1=1) crystalline substrate, method for producing gan crystal, gan crystalline substrate, and product |
| 06/04/2008 | CN101192520A Semiconductor device and manufacture method thereof |
| 06/04/2008 | CN101191252A Method for removing natural oxidizing layer before silicon chip low-temperature epitaxy growth |
| 06/04/2008 | CN101191251A Method for removing natural oxidizing layer before silicon chip low-temperature epitaxy growth |
| 06/04/2008 | CN101191250A Method for detecting normal growth of epitaxy single-crystal |
| 06/04/2008 | CN100392158C Method for preparing nano four-needle-shape zinc oxide crystal whisker |
| 06/03/2008 | US7381267 Heteroatomic single-crystal layers |
| 06/03/2008 | US7381266 Sapphire crystal growth method |
| 05/30/2008 | CA2612807A1 Semiconductor device and method of its manufacture |
| 05/29/2008 | WO2008062269A1 Reactor for growing crystals |
| 05/29/2008 | US20080124510 Large area, uniformly low dislocation density gan substrate and process for making the same |
| 05/29/2008 | DE102006057064A1 Application process for epitactic Group III nitride layer involves depositing Group III nitride layer on reconstructed surface of semiconductor |
| 05/29/2008 | DE102006055038A1 Epitaxierte Halbleiterscheibe sowie Vorrichtung und Verfahren zur Herstellung einer epitaxierten Halbleiterscheibe Epitaxially coated semiconductor wafer, as well as apparatus and method for producing an epitaxially coated semiconductor wafer, |
| 05/28/2008 | EP1926134A1 Method for manufacturing silicon epitaxial wafers |
| 05/28/2008 | EP1926133A2 A method for boron contamination reduction in IC fabrication |
| 05/28/2008 | CN201065431Y Fast discharging cold trap for metal organic chemical gas phase deposition device vacuum system |
| 05/28/2008 | CN101188195A A making method of multi-hole buffer layer for releasing stress |
| 05/27/2008 | US7378684 Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates |
| 05/27/2008 | US7377978 Method for producing silicon epitaxial wafer and silicon epitaxial wafer |
| 05/27/2008 | US7377977 High-purity crystal growth |
| 05/27/2008 | US7377976 Method for growing thin oxide films |
| 05/22/2008 | WO2008059875A1 Process for producing group iii element nitride crystal |
| 05/22/2008 | US20080118733 Nitride semiconductor ingot, nitride semiconductor substrate fabricated from the same and method for making nitride semiconductor ingot |
| 05/22/2008 | US20080115719 Reduction of carbon inclusions in sublimation grown SiC single crystals |
| 05/21/2008 | EP1483782A4 Production method of sic monitor wafer |
| 05/21/2008 | EP1381718A4 Method and apparatus for growing submicron group iii nitride structures utilizing hvpe techniques |
| 05/21/2008 | DE10261362B4 Substrat-Halter Substrate holder |
| 05/21/2008 | CN201063334Y Tool for revising extension base position |
| 05/21/2008 | CN101183643A Method for manufacturing thin film semiconductor device |
| 05/21/2008 | CN100389481C Substrate for nitride semiconductor growth |
| 05/21/2008 | CN100389233C Beta'-Sialon whisker gas phase reaction preparation method |
| 05/20/2008 | US7375385 Semiconductor heterostructures having reduced dislocation pile-ups |
| 05/20/2008 | US7374941 determining changes in a reactant supply system for repeated pulses of a vapor phase reactant; Atomic Layer Deposition |
| 05/20/2008 | US7374617 Atomic layer deposition methods and chemical vapor deposition methods |
| 05/15/2008 | WO2008057183A1 Method for continuous, in situ evaluation of entire wafers for macroscopic features during epitaxial growth |
| 05/15/2008 | US20080113186 Method for Growing Si-Ge Semiconductor Materials and Devices on Substrates |
| 05/14/2008 | EP1920080A2 High colour diamond |
| 05/14/2008 | EP1551768A4 Process for manufacturing a gallium rich gallium nitride film |
| 05/14/2008 | CN100387760C Method of producing self-supporting substrates comprising iii-nitrides by means of heteroepitaxy on a sacrificial layer |
| 05/13/2008 | US7371282 Solid solution wide bandgap semiconductor materials |
| 05/13/2008 | US7371281 Silicon carbide single crystal and method and apparatus for producing the same |
| 05/08/2008 | WO2007092893B1 Materials and methods for the manufacture of large crystal diamonds |
| 05/08/2008 | US20080107876 Zinc Oxide Microstructures and a Method of Preparing the Same |
| 05/08/2008 | US20080105296 Nanostructures and methods for manufacturing the same |
| 05/07/2008 | EP1918429A1 Aluminum nitride single crystal film, aluminum nitride single crystal laminated substrate and processes for production of both |
| 05/07/2008 | EP1917101A2 Method for manufacture and coating of nanostructured components |
| 05/07/2008 | EP1335044B1 Zinc oxide semiconductor material |
| 05/07/2008 | CN201057265Y Hydraulic cylinder |
| 05/07/2008 | CN100386847C Wafer holder |
| 05/07/2008 | CN100386845C Nitride semiconductor thin film and method for growing the same |
| 05/06/2008 | US7368308 Methods of fabricating semiconductor heterostructures |
| 05/06/2008 | US7368018 Chemical vapor deposition apparatus |
| 05/02/2008 | WO2008050476A1 Method for manufacturing epitaxial silicon wafer, and epitaxial silicon wafer |
| 05/01/2008 | US20080102610 Method of controlling stress in gallium nitride films deposited on substrates |
| 05/01/2008 | US20080102313 Atomic layer chemical vapor deposition of hybrid organic inorganic coatings comprised of such as aluminium benzene oxides; optical properties |
| 05/01/2008 | US20080099768 Diamond Transistor And Method Of Manufacture Thereof |
| 04/30/2008 | EP1916321A1 Crystal producing apparatus, crystal producing method, substrate producing method, gallium nitride crystal, and gallium nitride substrate |
| 04/30/2008 | EP1915888A2 Method and composition for adhering materials together |
| 04/30/2008 | EP1563122A4 Method for forming carbon nanotubes |
| 04/29/2008 | US7364805 Crystal film, crystal substrate, and semiconductor device |
| 04/29/2008 | US7364714 3C-SIC nanowhisker and synthesizing method and 3C-SIC nanowhisker |
| 04/24/2008 | WO2008047907A1 Sapphire substrate, nitride semiconductor luminescent element using the sapphire substrate, and method for manufacturing the nitride semiconductor luminescent element |
| 04/24/2008 | WO2007130916A3 A method of ultra-shallow junction formation using si film alloyed with carbon |
| 04/24/2008 | US20080092803 Patterned atomic layer epitaxy |
| 04/24/2008 | DE102007049666A1 Production of p- doped epitaxial coated silicon semiconductor wafers dopes a single crystal with boron and hydrogen and a controlled nitrogen concentration |
| 04/23/2008 | EP1190121A4 Truncated susceptor for vapor-phase deposition |
| 04/23/2008 | CN201049963Y Chemical vapor deposition device |