| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 08/06/2008 | CN101235540A Method for preparing aluminum nitride thin film on lithium aluminate wafer surface under low temperature |
| 08/06/2008 | CN101235539A Epitaxy growing method for La1-xCaxMnO3 single crystal thin film |
| 08/06/2008 | CN101235538A Electric arc atomization auxiliary preparation method for four-needle type zinc oxide crystal whisker |
| 08/06/2008 | CN101235537A Method for preparing ZnMgO alloy thin film |
| 08/06/2008 | CN101235486A Container for packaging solid high-purity metal organic compound and application thereof |
| 08/06/2008 | CN101234389A Collector unit and film formation apparatus for semiconductor process |
| 08/06/2008 | CN100409415C Method for using alpha polycrystal silicon in integrated circuit |
| 08/06/2008 | CN100409402C System and method of fast ambient switching for rapid thermal processing |
| 08/05/2008 | US7407549 Diamond single crystal composite substrate and method for manufacturing the same |
| 08/05/2008 | US7407548 Method of manufacturing a wafer |
| 08/05/2008 | CA2312790C Growth of very uniform silicon carbide epitaxial layers |
| 07/31/2008 | WO2008090514A2 Diamond electronic devices and methods for their manufacture |
| 07/31/2008 | WO2008090513A2 Diamond electronic devices including a surface and methods for their manufacture |
| 07/31/2008 | WO2008090512A1 Electronic field effect devices and methods for their manufacture |
| 07/31/2008 | WO2008090511A1 Plasma etching of diamond surfaces |
| 07/31/2008 | WO2008090510A1 High uniformity boron doped diamond material |
| 07/31/2008 | US20080182092 Defect reduction in seeded aluminum nitride crystal growth |
| 07/31/2008 | US20080178973 Containing Si and Mg; bendability to allow flat hemming, resistance to denting and corrosion; for automobile outer panel |
| 07/31/2008 | US20080178968 Aluminum alloy sheet with excellent formability and paint bake hardenability and method for production thereof |
| 07/31/2008 | US20080178967 Containing Si and Mg; bendability to allow flat hemming, resistance to denting and corrosion; for automobile outer panel |
| 07/30/2008 | EP1948844A1 Arrangement in connection with ald reactor |
| 07/30/2008 | EP1948843A1 Ald reactor |
| 07/30/2008 | CN101230487A Method for growing indium nitride monocrystal thin films |
| 07/30/2008 | CN100406391C Preparation method of nanometer tungsten trioxide crystallite |
| 07/29/2008 | US7405422 Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD |
| 07/29/2008 | US7404984 Vapor-phase reactants pulse repeatedly and alternately into reaction zone containing substrate to form solid-state thin film wherein gas volume is evacuated between pulses |
| 07/29/2008 | US7404858 Method for epitaxial growth of silicon carbide |
| 07/24/2008 | WO2008087452A1 Production of single-crystal semiconductor material using a nanostructure template |
| 07/24/2008 | US20080175782 High temperature, high strength composite nanostructure metal carbides, formed by heating carbon nanotubes with reactive gases to form in situ |
| 07/23/2008 | EP1947684A1 Semiconductor base material and method of manufacturing the material |
| 07/23/2008 | EP1656469B1 Methods of depositing materials over substrates and methods of forming layers over substrates |
| 07/23/2008 | EP1341718B1 Method and device for electronic cyclotron resonance plasma deposit of single-wall carbon nanotubes and resulting nanotubes |
| 07/23/2008 | CN101228612A System of rotatable bearing machine and treatment room inner support for chip processing device |
| 07/23/2008 | CN101228013A Composition for adhering materials together |
| 07/23/2008 | CN101225547A Growth chamber and gallium nitride material growth method |
| 07/23/2008 | CN101225544A Epitaxially coated semiconductor wafer and device and method for producing an epitaxially coated semiconductor wafer |
| 07/23/2008 | CN101225512A Method of vaporizing solid organometallic compound |
| 07/23/2008 | CN100404731C Analogy method of GaAs-based InSb thin film heterogeneity epitaxial growth |
| 07/22/2008 | US7402504 Epitaxial semiconductor deposition methods and structures |
| 07/17/2008 | WO2008085129A1 Nitride nanowires and method of producing such |
| 07/17/2008 | CA2674448A1 Nitride nanowires and method of producing such |
| 07/16/2008 | CN101223630A Diamond medical devices |
| 07/16/2008 | CN101220516A Low-temperature method for manufacturing nano-MgO crystal whisker |
| 07/16/2008 | CN101220505A Gas supply system, gas supply method, method of cleaning thin film forming apparatus, thin film forming method and thin film forming apparatus |
| 07/16/2008 | CN101220504A Method and apparatus for growing silicon carbide crystals |
| 07/16/2008 | CN101220244A High surface quality GaN wafer and method of fabricating same |
| 07/16/2008 | CN100402421C Tough diamonds and method of making thereof |
| 07/15/2008 | US7399707 In situ application of etch back for improved deposition into high-aspect-ratio features |
| 07/15/2008 | US7399358 Synthesis of large homoepitaxial monocrystalline diamond |
| 07/15/2008 | US7399357 Atomic layer deposition using multilayers |
| 07/15/2008 | US7399356 Method for preparation of ferroelectric single crystal film structure using deposition method |
| 07/10/2008 | WO2005013326A3 Epitaxial growth of relaxed silicon germanium layers |
| 07/10/2008 | US20080166522 Method for Producing III-N Layers, and III-N Layers or III-N Substrates, and Devices Based Thereon |
| 07/10/2008 | DE10260860B4 Schicht aus Si1-xGex, Verfahren zu deren Herstellung und mikromechanisches Bauelement damit Layer of Si1-xGex, to processes for their preparation and micromechanical component thus |
| 07/09/2008 | EP1498938B1 Method of forming silicon epitaxial layer |
| 07/09/2008 | EP1456871B1 Susceptor for epitaxial growth |
| 07/09/2008 | CN101217110A Group III nitride semiconductor substrate and its manufacturing method |
| 07/09/2008 | CN100401482C Epitaxial growing method and substrate for epitaxial growth |
| 07/09/2008 | CN100401470C Method for controlling and removing fog-shaped micro-defect of silicon gas-phase epitaxial layer |
| 07/09/2008 | CN100401460C Substrate locally with mono-crystalline gallium nitride and its preparing method |
| 07/08/2008 | US7396410 Featuring forming methods to reduce stacking fault nucleation sites |
| 07/08/2008 | US7396409 Acicular silicon crystal and process for producing the same |
| 07/08/2008 | US7396408 Monocrystalline diamond layer and method for the production thereof |
| 07/08/2008 | US7396404 Methods for forming alkali halide ingots into rectangular plates |
| 07/08/2008 | CA2346290C Production of bulk single crystals of silicon carbide |
| 07/03/2008 | WO2008078302A2 Iii-nitride light emitting diodes grown on templates to reduce strain |
| 07/03/2008 | WO2008078300A2 Iii-nitride light emitting diodes grown on templates to reduce strain |
| 07/03/2008 | WO2008077386A2 METHOD FOR PRODUCING ONE-DIMENSIONAL COAXIAL Ge/SiCxNy HETEROSTRUCTURES, CORRESPONDING STRUCTURE AND USE OF SAID STRUCTURE |
| 07/03/2008 | US20080157096 monocrystalline diamond, adapted for use as semiconductors or waveguides |
| 07/03/2008 | US20080156256 System and method for producing synthetic diamond |
| 07/03/2008 | DE112006002430T5 Verfahren zur Herstellung von Super-Gittern unter Verwendung von abwechselnden Hoch und Niedrig-Temperatur-Schichten zum Sperren von parasitären Strompfaden A process for the production of super-lattices using alternating high and low-temperature layers to block parasitic current paths |
| 07/02/2008 | EP1661239A4 Method and apparatus for bi-planar backward wave oscillator |
| 07/02/2008 | EP1374290B1 Improved process for deposition of semiconductor films |
| 07/02/2008 | CN101210345A Device and method for growing zinc oxide film |
| 07/02/2008 | CN100399511C Compound semiconductor substrate and its production method |
| 07/01/2008 | US7393763 Manufacturing method of monocrystalline gallium nitride localized substrate |
| 07/01/2008 | US7393562 Deposition methods for improved delivery of metastable species |
| 07/01/2008 | US7393514 high temperature, high strength composite nanostructure metal carbides, formed by heating carbon nanotubes with reactive gases to form in situ solid carbides |
| 07/01/2008 | US7393412 Method for manufacturing compound semiconductor epitaxial substrate |
| 07/01/2008 | US7393410 Method of manufacturing nano-wire |
| 07/01/2008 | US7393213 Method for material growth of GaN-based nitride layer |
| 06/26/2008 | US20080152570 Method of Growing III group nitride single crystal and III group nitride single crystal manufactured by using the same |
| 06/26/2008 | US20080149021 Methods of Forming Dual Damascene Structures |
| 06/26/2008 | US20080149020 Device and method to producing single crystals by vapour deposition |
| 06/25/2008 | EP1936668A2 Nitride semiconductor substrate and manufacturing method thereof |
| 06/25/2008 | CN101207174A 氮化物半导体衬底及其制造方法 The nitride semiconductor substrate and manufacturing method thereof |
| 06/25/2008 | CN101207013A Method and apparatus for heating a substrate |
| 06/25/2008 | CN101207012A Method and apparatus for heating a substrate |
| 06/25/2008 | CN101205627A Hydride gas-phase epitaxy apparatus for preparing nitride monocrystalline substrate |
| 06/25/2008 | CN101205626A Hydride gas-phase epitaxy apparatus independently supplying metal halide |
| 06/24/2008 | US7390581 used for coating epitaxial films in the fabrication of electronic and opto-electronic devices such as laser diodes, light emitting diodes, transistors and detectors |
| 06/24/2008 | US7390367 Housing assembly for an induction heating device including liner or susceptor coating |
| 06/24/2008 | US7390360 Organometallic compounds |
| 06/24/2008 | US7390359 Nitride semiconductor wafer |
| 06/19/2008 | WO2008073930A1 Formation of epitaxial layers containing silicon and carbon |
| 06/19/2008 | US20080143012 Novel Polymer Films and Textile Laminates Containing Such Polymer Films |
| 06/19/2008 | US20080142926 Directionally controlled growth of nanowhiskers |
| 06/19/2008 | US20080142846 Nitride semiconductor substrate and manufacturing method thereof |
| 06/19/2008 | US20080142784 Nanostructures and methods for manufacturing the same |
| 06/19/2008 | DE102006058820A1 Verfahren zur Herstellung von SGOI- und GeOI-Halbleiterstrukturen A process for preparing SGOI- and GeOI semiconductor structures |