| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 09/24/2008 | CN100420569C Free-standing (Al, Ga, In)N and parting method for forming same |
| 09/23/2008 | US7427556 Method to planarize and reduce defect density of silicon germanium |
| 09/23/2008 | US7427326 Minimizing degradation of SiC bipolar semiconductor devices |
| 09/18/2008 | WO2008111277A1 Single crystal zinc oxide substrate |
| 09/17/2008 | CN101265572A Continuously produced heating reaction furnace |
| 09/17/2008 | CN100419958C Susceptor for epitaxial growth and epitaxial growth method |
| 09/16/2008 | US7425237 Method for depositing a material on a substrate wafer |
| 09/12/2008 | WO2008108381A1 Process for producing group iii nitride crystal |
| 09/12/2008 | WO2008107010A1 Method and device for the production of a compound semiconductor material by means of gas phase epitaxy |
| 09/12/2008 | WO2008077386A3 METHOD FOR PRODUCING ONE-DIMENSIONAL COAXIAL Ge/SiCxNy HETEROSTRUCTURES, CORRESPONDING STRUCTURE AND USE OF SAID STRUCTURE |
| 09/11/2008 | US20080219910 Single-Crystal GaN Substrate |
| 09/10/2008 | EP1967599A1 Aluminum alloy sheet with excellent formability and paint bake hardenability and method for production thereof |
| 09/10/2008 | EP1967598A1 Aluminum alloy sheet with excellent formability and paint bake hardenability and method for production thereof |
| 09/10/2008 | EP1966414A2 Differentiated-temperature reaction chamber |
| 09/10/2008 | EP1342075B1 Device contaning nanosensors for detecting an analyte and its method of manufacture |
| 09/10/2008 | CN101263248A Process for manufacture of super lattice using alternating high and low temperature layers to block parasitic current path |
| 09/10/2008 | CN101261952A Substrate carrying bench and substrate treatment device |
| 09/10/2008 | CN100418246C Doped organic semiconductor materials and process for their preparation |
| 09/10/2008 | CN100418191C 外延生长方法 Epitaxial growth |
| 09/09/2008 | US7422986 Deposition methods utilizing microwave excitation |
| 09/09/2008 | US7422630 Fabrication method of semiconductor device |
| 09/09/2008 | CA2284475C Growth of gan on sapphire with mse grown buffer layer |
| 09/04/2008 | WO2007117689A3 Growing large surface area gallium nitride crystals |
| 09/04/2008 | US20080213543 Method and device for manufacturing semiconductor compound materials by means of vapour phase epitaxy |
| 09/04/2008 | US20080211040 Semiconductor nanowire and deposited catalyst material; such as glucose level monitors for controlling insulin release |
| 09/04/2008 | US20080210975 Method of fabricating heteroepitaxial microstructures |
| 09/04/2008 | US20080210157 Systems and methods for forming strontium-and/or barium-containing layers |
| 09/04/2008 | DE102007010286A1 Compound semi-conductor material manufacturing, involves applying gas phase epitaxies of reactor with in mixture of feed gases, which is carried along single or multiple reaction gases in direction of substrate |
| 09/03/2008 | EP1723086B1 Method of incoporating a mark in cvd diamond |
| 09/03/2008 | EP1292726B1 Single crystal diamond prepared by cvd |
| 09/03/2008 | CN101258271A Method for producing iii-n layers, and iii-n layers or iii-n substrates, and devices based thereon |
| 09/03/2008 | CN101257079A Semiconductor layer |
| 09/03/2008 | CN101256940A Gas supply system and integrated unit for semiconductor manufacturing device |
| 09/03/2008 | CN101256937A Method and apparatus for controlling gas flow to a processing chamber |
| 09/03/2008 | CN101256936A Method and apparatus for controlling gas flow to a processing chamber |
| 09/03/2008 | CN101256935A Method and apparatus for controlling gas flow to a processing chamber |
| 09/03/2008 | CN101255545A Deposition of LICo02 |
| 09/03/2008 | CN100415952C Method for synthesizing ordered array of single crystal Sic Nano filament with small diameter through heat evaporation method |
| 09/03/2008 | CN100415947C Method of fabricating an epitaxially grown layer |
| 09/03/2008 | CN100415946C A substrate for epitaxy and a method of preparing the same |
| 09/03/2008 | CN100415933C System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy |
| 09/02/2008 | US7419903 Thin films |
| 09/02/2008 | US7419546 Gas diffusion electrodes, membrane-electrode assemblies and method for the production thereof |
| 09/02/2008 | CA2348397C Method of forming diamond film and film-forming apparatus |
| 08/28/2008 | WO2008101982A1 Device and method for selectively depositing crystalline layers using mocvd or hvpe |
| 08/28/2008 | WO2008101626A1 Method for producing (al, ga)inn crystals |
| 08/28/2008 | WO2008101625A1 Method for producing (al,ga)n crystals |
| 08/28/2008 | US20080202582 Process for Producing Monocrystal Thin Film and Monocrystal Thin Film Device |
| 08/28/2008 | US20080202409 Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate |
| 08/28/2008 | DE102007009839A1 Hydride vapor phase epitaxy method for producing aluminum gallium indium nitride mono-crystal, used in optoelectronics, particularly for ight-emitting diodes, involves utilizing mixture of aluminum, gallium and indium metals |
| 08/28/2008 | DE102007009412A1 Hydride vapor phase epitaxy process for the production of aluminum-gallium-nitrogen monocrystals useful in laser diode, comprises converting mixture of aluminum, gallium and indium metals having hydrogen compounds of halogens to halides |
| 08/28/2008 | DE102007009145A1 Vorrichtung zum Abscheiden kristalliner Schichten wahlweise mittels MOCVD oder HVPE Apparatus for depositing crystalline layers either by MOCVD or HVPE |
| 08/27/2008 | CN101250752A Group iii nitride semiconductor substrate |
| 08/27/2008 | CN100414005C Production method for semiconductor crystal and semiconductor luminous element |
| 08/27/2008 | CN100414004C Device and method for producing single crystals by vapor deposition |
| 08/26/2008 | US7417255 Methods of forming a high conductivity diamond film and structures formed thereby |
| 08/26/2008 | US7416606 Method of forming a layer of silicon carbide on a silicon wafer |
| 08/26/2008 | US7416605 Anneal of epitaxial layer in a semiconductor device |
| 08/26/2008 | US7416604 Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same |
| 08/26/2008 | CA2412999C Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate |
| 08/21/2008 | WO2008099422A2 Method and apparatus for producing single crystalline diamonds |
| 08/21/2008 | WO2008064077A3 Methods for high volume manufacture of group iii-v semiconductor materials |
| 08/21/2008 | WO2007117583A3 Cluster tool for epitaxial film formation |
| 08/21/2008 | DE102005045337B4 Epitaxierte Siliciumscheibe und Verfahren zur Herstellung von epitaxierten Siliciumscheiben Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafers |
| 08/20/2008 | EP1959033A2 Group III nitride semiconductor substrate |
| 08/20/2008 | EP1957689A2 High crystalline quality synthetic diamond |
| 08/20/2008 | EP1567531A4 Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride |
| 08/20/2008 | EP1264011A4 Iii-v nitride substrate boule and method of making and using the same |
| 08/20/2008 | CN101248210A High colour diamond layer |
| 08/20/2008 | CN101246836A Substrate carrying platform and process method for its surface |
| 08/20/2008 | CN101246835A Substrate support assembly |
| 08/20/2008 | CN101245491A Method for growing unsupported gallium nitride nanocrystalline on zinc oxide of nano-stick |
| 08/20/2008 | CN101245489A Nanocrystalline silicon forming method |
| 08/20/2008 | CN101245488A Method for growing nanocrystalline silicon in critical condition |
| 08/20/2008 | CN100413028C A method of manufacturing a semiconductor wafer |
| 08/20/2008 | CN100412489C Wafer boat with arcuate wafer support arms |
| 08/20/2008 | CN100412238C Equipment and process for preparing monocrystalline GaN film material |
| 08/19/2008 | US7413608 Crystallization apparatus, crystallization method, and phase shifter |
| 08/14/2008 | WO2008097484A2 Methods of depositing epitaxial thermoelectric films having reduced crack and/or surface defect densities and related devices |
| 08/14/2008 | WO2008096884A1 N-type conductive aluminum nitride semiconductor crystal and method for producing the same |
| 08/14/2008 | CA2676089A1 Methods of depositing epitaxial thermoelectric films having reduced crack and/or surface defect densities and related devices |
| 08/13/2008 | EP1956112A2 System and method for reducing particles in epitaxial reactors |
| 08/13/2008 | CN201099698Y Ternary airflow metallorganic chemical vapour deposition equipment reaction cavity |
| 08/13/2008 | CN101241883A Preparation method of a coating of gallium nitride |
| 08/13/2008 | CN101241851A Substrate for growing gallium nitride, method for preparing the substrate for growing gallium nitride and method for preparing gallium nitride substrate |
| 08/13/2008 | CN101240451A In-situ corrosion method for reducing HVPE GaN thin film dislocation density |
| 08/13/2008 | CN101240446A Apparatus of supplying organometallic compound |
| 08/13/2008 | CN101240445A Heater rotating device used for silicon carbide epitaxy |
| 08/13/2008 | CN100411102C Vaporizer for CVD, solution voporizing CVD device and voporization method for CVD |
| 08/12/2008 | US7410923 SiC material, semiconductor device fabricating system and SiC material forming method |
| 08/12/2008 | US7410671 Sequential chemical vapor deposition |
| 08/12/2008 | US7410539 Template type substrate and a method of preparing the same |
| 08/07/2008 | WO2008094491A1 New laser uses for single-crystal cvd diamond |
| 08/07/2008 | WO2008039165A3 Carbon dioxide nanosensor, and respiratory co2 monitors |
| 08/07/2008 | US20080188065 Preparation method of a coating of gallium nitride |
| 08/07/2008 | US20080188064 Nanostructures and methods for manufacturing the same |
| 08/07/2008 | US20080185611 Preparation method of a coating of gallium nitride |
| 08/07/2008 | DE19848298B4 Hochtemperaturstabile Halbleitersubstratscheibe großen Durchmessers und Verfahren zu ihrer Herstellung High temperature stable semiconductor substrate disc of large diameter and methods for their preparation |
| 08/06/2008 | EP1953831A2 Stacked photoelectric conversion device and method of producing the same |
| 08/06/2008 | EP1953273A2 Method of incorporating a mark in CVD diamond |