Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
11/2008
11/25/2008US7455729 Method for producing by vapour-phase epitaxy a gallium nitride film with low defect density
11/20/2008US20080283846 Method for growing semiconductor layer, method for producing semiconductor light-emitting element, semiconductor light-emitting element, and electronic device
11/20/2008US20080282978 Process For Manufacturing A Gallium Rich Gallium Nitride Film
11/19/2008EP1993150A2 Method for growing semiconductor layer, method for producing semiconductor light-emitting element, semiconductor light-emitting element, and electronic device
11/19/2008EP1991499A1 Method for metal-free synthesis of epitaxial semiconductor nanowires on si
11/19/2008CN101310044A Arrangement in connection with ALD reactor
11/19/2008CN101310043A Ald reactor
11/19/2008CN101307499A Si3N4 crystal whisker preparation process
11/19/2008CN101307498A Iii-v nitride substrate wafer and its manufacture method and uses
11/19/2008CN101307488A Polycrystalline silicon thin film preparation method
11/19/2008CN101307485A Nitrogen source ionization method and device for semiconductor material vapor deposition growth system
11/19/2008CN100435436C Method for making semiconductor substrate
11/19/2008CN100435268C Single crystal gallium nitride substrate, method for growing single crystal gallium nitride and method for mfg. substrate thereof
11/19/2008CN100434573C Method for developing aluminum nitride crystal in large size through flow of plasma flame
11/18/2008US7453051 System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy
11/18/2008US7452827 Gas distribution showerhead featuring exhaust apertures
11/18/2008US7452420 Apparatus and method for diamond production
11/13/2008WO2008135444A1 Method and device for preparing a multilayered coating on a substrate
11/13/2008US20080280039 Sequential chemical vapor deposition
11/13/2008US20080277746 Nanowire sensor with self-aligned electrode support
11/13/2008US20080276869 Substrate holder
11/13/2008CA2685586A1 Method and device for preparing a multilayered coating on a substrate
11/12/2008EP1699951B1 Method of producing self-supporting substrates comprising iii-nitrides by means of heteroepitaxy on a sacrificial layer
11/12/2008CN101303998A Plasma processing apparatus, focus ring, and susceptor
11/12/2008CN101303997A Plasma processing apparatus, focus ring, and susceptor
11/12/2008CN101302648A Gallium nitride thin film epitaxial growth structure and method
11/12/2008CN101302609A Preparation of Ti5Si3 by normal pressure chemical vapor deposition
11/12/2008CN101302006A Preparation of tube wall layer number-controllable nano-carbon tube
11/12/2008CN100433257C Process for producing monocrystal thin film and monocrystal thin film device
11/11/2008US7449065 Method for the growth of large low-defect single crystals
11/11/2008US7449063 Method and mould for casting articles with a pre-determined crystalline orientation
11/06/2008DE10341806B4 Verfahren zur Herstellung einer epitaktischen Silizium-Germanium Basisschicht eines heterobipolaren pnp Transistors A process for producing an epitaxial silicon-germanium base layer of a PNP transistor heterobipolaren
11/05/2008EP1988194A1 Substrate for growing of compound semiconductor and method of epitaxial growth
11/05/2008EP1874979A4 Reactor
11/05/2008CN101299409A Method for manufacturing element containing at least one single crystalline layer on substrate
11/05/2008CN101298693A Double-layer airflow quartz fairing reaction chamber apparatus for MOCVD system
11/04/2008US7446217 Composition and method for low temperature deposition of silicon-containing films
11/04/2008US7445673 Manufacturing gallium nitride substrates by lateral overgrowth through masks and devices fabricated thereof
11/04/2008US7445672 Method of forming group-III nitride crystal, layered structure and epitaxial substrate
10/2008
10/30/2008US20080268150 Method of Coating for Diamond Electrode
10/30/2008US20080265264 Beta-Ga2O3 single crystal growing method, thin-film single crystal growing method, Ga2O3 light-emitting device, and its manufacturing method
10/29/2008EP1984545A2 Method for growth of semipolar (al,in,ga,b)n optoelectronic devices
10/29/2008EP1292726B8 Single crystal diamond prepared by cvd
10/29/2008CN100429750C Coated semiconductor wafer and method and apparatus to obtain it
10/28/2008US7442254 Nitride semiconductor device having a nitride semiconductor substrate and an indium containing active layer
10/28/2008US7442253 Process for forming low defect density, ideal oxygen precipitating silicon
10/28/2008US7442252 Method for producing single crystal of multi-element oxide single crystal containing bismuth as constituting element
10/23/2008WO2008126532A1 Substrate for epitaxial growth and method for producing nitride compound semiconductor single crystal
10/23/2008WO2008078302A3 Iii-nitride light emitting diodes grown on templates to reduce strain
10/23/2008WO2008078300A3 Iii-nitride light emitting diodes grown on templates to reduce strain
10/23/2008US20080257262 Susceptor Designs for Silicon Carbide Thin Films
10/23/2008US20080257256 BULK GaN AND AlGaN SINGLE CRYSTALS
10/22/2008EP1983080A2 Single crystal diamond prepared by CVD
10/22/2008EP1983070A2 Metal oxide layer formed on substrates and its fabrication methods
10/22/2008EP1449407B1 Induction heating devices and methods for controllably heating an article
10/22/2008CN101290877A Preparing method of polycrystalline silicon thin film
10/22/2008CN100428412C Substrate processing system
10/22/2008CN100428410C Homogeneity improving method and device for hydride gaseous epitaxially groven GaN material
10/21/2008US7438762 Manufacture method for ZnO based compound semiconductor crystal and ZnO based compound semiconductor substrate
10/21/2008US7438761 Apparatus for fabricating a III-V nitride film and a method for fabricating the same
10/21/2008US7438760 Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition
10/16/2008WO2008123242A1 Substrate for epitaxial growth and epitaxial growth process
10/16/2008WO2007111967A3 Chemically attached diamondoids for cvd diamond film nucleation
10/16/2008US20080251008 Substrate Processing Apparatus and Semiconductor Device Producing Method
10/16/2008DE102007017592A1 Verfahren zur Regelung eines Epitaxieaufwachsverfahrens in einem Epitaxiereaktor Method for regulating a Epitaxieaufwachsverfahrens in an epitaxy reactor
10/16/2008DE102006041513B4 Hochtemperatur-Schichtsupraleiteraufbau und Verfahren zu seiner Herstellung High-temperature layer superconductor structure and process for its preparation
10/16/2008DE102005013831B4 Siliciumscheibe und Verfahren zur thermischen Behandlung einer Siliciumscheibe Silicon wafer and method for heat treating a silicon wafer
10/15/2008EP1394865B1 Iii group nitride based semiconductor element and method for manufacture thereof
10/15/2008CN100425744C Homogeneous-thickness silicon-phase epitaxial-layer growth device and method
10/15/2008CN100425532C Nozzle of polycrystalline-silicon furnace
10/14/2008US7435608 III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor wafer
10/14/2008US7435297 Molten-salt-based growth of group III nitrides
10/14/2008US7435296 Diamond bodies grown on SiC substrates and associated methods
10/14/2008US7435295 Method for producing compound single crystal and production apparatus for use therein
10/09/2008WO2008091910A3 Composite wafers having bulk-quality semiconductor layers
10/09/2008WO2008014449A3 Seed holder for crystal growth reactors
10/09/2008WO2008014446A3 Sintered metal components for crystal growth reactors
10/09/2008US20080248259 Gallium nitride/sapphire thin film having reduced bending deformation
10/09/2008US20080247935 Compound Semiconductor Substrate
10/09/2008US20080246054 Self-supported nitride semiconductor substrate and its production method, and light-emitting nitride semiconductor device using it
10/09/2008US20080246053 P-Type Group III Nitride Semiconductor and Production Method Thereof
10/08/2008EP1977441A2 Method for enhancing growth of semipolar (ai,in,ga,b)n via metalorganic chemical vapor deposition
10/08/2008EP1977028A1 Process for growth of low dislocation density gan
10/08/2008EP1117968A4 Method and apparatus for thermal processing of semiconductor substrates
10/08/2008CN201128779Y Preparing device for monocrystalline silicon film/ polysilicon film and components thereof
10/08/2008CN201128778Y Railboat for preventing silicon chip from edge-breaking in polycrystalline growing process
10/08/2008CN101281864A Method and apparatus for improving hydride vapour phase epitaxy growth GaN material homogeneity
10/08/2008CN101281863A Method for preparing large scale nonpolar surface GaN self-supporting substrate
10/08/2008CN100424221C Production of hafnium nitride thin-membrane materials from ion beam epitaxial growth apparatus
10/08/2008CN100424220C Production of zirconium nitride thin-membrane materials from ion beam epitaxial growth apparatus
10/07/2008US7431773 Atomic layer deposition apparatus and method
10/07/2008US7431767 Apparatus and method for growth of a thin film
10/02/2008WO2008014434A3 Crystal growth method and reactor design
10/02/2008US20080241049 A single crystal diamond grown by microwave plasma chemical vapor deposition, annealed at pressures in excess of 4.0 GPa and heated to temperature in excess of 1500 degrees C. that has a hardness of greater than 120 GPa; enhanced optical characteristics
10/02/2008US20080236477 Vapor phase growth apparatus and vapor phase growth method
10/01/2008EP1380050B1 Method for producing a chalcogenide-semiconductor layer of the abc2 type with optical process monitoring
10/01/2008CN100423297C Method for manufacturing N0.3 family nitride substrate
09/2008
09/25/2008WO2008115135A1 Semiconductor heterostructures and manufacturing thereof
09/24/2008EP1972002A1 Simplified method of producing an epitaxially grown structure
09/24/2008CN100420776C Method for cracking source oven molecular beam epitaxial indium phosphide using solid-state phosphorus
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