| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 12/31/2008 | CN100448327C System and method for lamp split zone control |
| 12/31/2008 | CN100447948C Growth method of nitride semiconductor epitaxial layers |
| 12/30/2008 | US7470989 Technique for perfecting the active regions of wide bandgap semiconductor nitride devices |
| 12/30/2008 | US7470970 Prepared by making use of orientation (plane) dependence of the oxygen doping to GaN; non-C-plane growth enables the growing GaN crystal to accept oxygen effectively; for producing light emitting diodes, laser diodes or other electronic devices of groups 3 and 5 nitride semiconductors |
| 12/30/2008 | US7470611 In situ deposition of a low K dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application |
| 12/25/2008 | US20080318418 Process for Forming Continuous Copper Thin Films Via Vapor Deposition |
| 12/25/2008 | US20080317954 Pulsed deposition process for tungsten nucleation |
| 12/25/2008 | US20080314311 Hvpe showerhead design |
| 12/24/2008 | WO2008155438A1 Microspheres of silicon and photonic sponges, method for production and uses thereof in the manufacture of photonic devices |
| 12/24/2008 | EP2006887A2 III-V Nitride semiconductor layer-bonded substrate and semiconductor device |
| 12/24/2008 | EP2004882A2 Growing large surface area gallium nitride crystals |
| 12/24/2008 | EP1613789B1 Volatile copper(i) complexes for deposition of copper films by atomic layer deposition |
| 12/24/2008 | CN101330016A Method for depositing atomic layer and semiconductor device formed by the same |
| 12/24/2008 | CN101330015A Method for depositing atomic layer and semiconductor device formed by the same |
| 12/24/2008 | CN101330014A Method for depositing atomic layer and semiconductor device formed by the same |
| 12/24/2008 | CN101328609A Method for preparing tin doping zinc oxide nanowire by vapor deposition |
| 12/23/2008 | US7468311 Deposition of silicon-containing films from hexachlorodisilane |
| 12/23/2008 | US7468103 Method of manufacturing gallium nitride-based single crystal substrate |
| 12/18/2008 | WO2008152126A1 Device for coating substrates disposed on a susceptor |
| 12/18/2008 | US20080311393 Substrate for epitaxy and method of preparing the same |
| 12/18/2008 | US20080311024 Diamond single crystal substrate manufacturing method and diamond single crystal substrate |
| 12/18/2008 | US20080308909 Epitaxial wafers, method for manufacturing of epitaxial wafers, method of suppressing bowing of these epitaxial wafers and semiconductor multilayer structures using these epitaxial wafers |
| 12/18/2008 | DE102006030268B4 Verfahren zum Ausbilden einer Halbleiterstruktur, insbesondere eines FETs A method of forming a semiconductor structure, in particular a FETs |
| 12/17/2008 | EP2003696A1 GaN substrate, substrate with epitaxial layer, semiconductor device and method of manufacturing GaN substrate |
| 12/17/2008 | EP2003230A2 GaN substrate, substrate with an epitaxial layer, semiconductor device, and GaN substrate manufacturing method |
| 12/17/2008 | CN101323975A Method for preparing SnO2-ZnO alloplasm nanobranch |
| 12/17/2008 | CN101323971A Method for preparing high quality ZnO film using cushioning layer |
| 12/17/2008 | CN101323970A Tubular furnace and method for changing growth substrate or source material position using the same |
| 12/17/2008 | CN100444323C Formation of lattice-tuning semiconductor substrates |
| 12/16/2008 | US7465666 Method for forming tungsten materials during vapor deposition processes |
| 12/16/2008 | US7465665 Method for depositing tungsten-containing layers by vapor deposition techniques |
| 12/16/2008 | US7465499 Boron phosphide-based semiconductor device, production method thereof, light-emitting diode and boron phosphide-based semiconductor layer |
| 12/16/2008 | US7465354 Patterned ferroelectric thin films for microwave devices |
| 12/16/2008 | US7465353 Method for growing epitaxial crystal |
| 12/11/2008 | WO2008148759A1 Device for the temperature control of the surface temperatures of substrates in a cvd reactor |
| 12/11/2008 | US20080303118 Process for fabricating a structure for epitaxy without an exclusion zone |
| 12/11/2008 | DE102007026348A1 Verfahren und Vorrichtung zur Temperatursteuerung der Oberflächentemperaturen von Substraten in einem CVD-Reaktor Method and apparatus for temperature control of the surface temperatures of substrates in a CVD reactor |
| 12/10/2008 | EP2000566A2 Interlayer of orientational substrate and orientational substrate for forming epitaxial film |
| 12/10/2008 | EP2000565A1 Growth method of a GaN crystal, and GaN crystal substrate |
| 12/10/2008 | EP1370709B1 Method and Apparatus for Synthesizing Diamond by Chemical Vapor Deposition |
| 12/10/2008 | EP1097251B1 System and method for reducing particles in epitaxial reactors |
| 12/10/2008 | CN101319402A Growth method of a gan crystal, and gan crystal substrate |
| 12/10/2008 | CN101319400A Method for Fe doped growing GaFeN dilution magnetic semiconductor and uses thereof |
| 12/10/2008 | CN101319377A Nano SrAl2O4 material and method for producing the same |
| 12/10/2008 | CN101319376A Rare earth doping nano SrAl2O4 material and method for producing the same |
| 12/10/2008 | CN101319369A Method of preparing type p ZnO nano-wire |
| 12/10/2008 | CN101319363A Method for preparing polysilicon |
| 12/10/2008 | CN101319361A 单晶金刚石 Single crystal diamond |
| 12/10/2008 | CN101319360A 单晶金刚石 Single crystal diamond |
| 12/10/2008 | CN101319359A 单晶金刚石 Single crystal diamond |
| 12/10/2008 | CN101319358A 单晶金刚石 Single crystal diamond |
| 12/10/2008 | CN101319356A Preparation of nano-carbon tube with added Zn |
| 12/10/2008 | CN101318654A Method for preparing high purity polysilicon particle with fluidized bed and bed fluidizing reactor |
| 12/10/2008 | CN101318645A Method for preparing carbon nano-tube array with acetone as carbon source |
| 12/10/2008 | CN100442442C Process for producing silicon epitaxial wafer |
| 12/10/2008 | CN100442441C Method and apparatus for forming epitaxial layers |
| 12/09/2008 | US7462893 Method of fabricating GaN |
| 12/09/2008 | US7462239 Low temperature load and bake |
| 12/09/2008 | US7462238 Crystal growth apparatus and method of producing a crystal |
| 12/04/2008 | WO2008146780A1 Fluid control apparatus |
| 12/04/2008 | WO2008146779A1 Fluid control apparatus and method for assembling the same |
| 12/04/2008 | WO2008146699A1 Method for manufacturing gan-based nitride semiconductor self-supporting substrate |
| 12/04/2008 | US20080299748 Group III-V Crystal |
| 12/04/2008 | US20080295764 Substrate temperature accuracy and temperature control flexibility in a molecular beam epitaxy system |
| 12/04/2008 | DE10045958B4 Vorrichtung zum Leiten eines gasförmigen Mediums in eine und/oder aus einer Prozeßkammer Means for conducting a gaseous medium into and / or out of a process chamber |
| 12/03/2008 | EP1997125A2 Growth method using nanostructure compliant layers and hvpe for producing high quality compound semiconductor materials |
| 12/03/2008 | EP1996751A2 Materials and methods for the manufacture of large crystal diamonds |
| 12/03/2008 | CN101317247A Epitaxial growth of nitride compound semiconductors structures |
| 12/03/2008 | CN101314867A Slit valve |
| 12/03/2008 | CN100440557C Semiconductor light emitting device and device |
| 12/03/2008 | CN100440556C Semiconductor light emitting device and device |
| 12/03/2008 | CN100440436C Vapor-phase growth method |
| 12/03/2008 | CN100440435C Semiconductor device and method for manufacturing the same |
| 12/03/2008 | CN100440425C Structure for mounting loading table device, processing device, discharge prevention method between feeder lines |
| 12/02/2008 | US7459026 Light irradiation apparatus, crystallization apparatus, crystallization method and device |
| 12/02/2008 | US7459025 Methods for transferring a layer onto a substrate |
| 12/02/2008 | US7459024 Method of forming an N-type doped single crystal diamond |
| 12/02/2008 | US7459023 Method for producing semiconductor crystal |
| 11/27/2008 | WO2008143166A1 Method for manufacturing semiconductor crystal of nitride of element belonging to group-iii, semiconductor substrate formed of nitride of element belonging to group-iii, and semiconductor light emission device |
| 11/27/2008 | WO2008142115A1 Device for coating a plurality of closest-packed substrates arranged on a susceptor |
| 11/27/2008 | WO2008099422A3 Method and apparatus for producing single crystalline diamonds |
| 11/26/2008 | EP1995796A2 Single crystal GaN substrate and laser diode produced thereon |
| 11/26/2008 | EP1995786A1 GaN substrate, and epitaxial substrate and semiconductor light-emitting device employing the substrate |
| 11/26/2008 | EP1995357A1 Gallium nitride material and method for producing same |
| 11/26/2008 | CN101311660A Polycrystalline silicon reducing furnace water cooled electrode |
| 11/26/2008 | CN101311657A Polycrystalline silicon reducing furnace water-cooling double glass viewing mirror |
| 11/26/2008 | CN101311656A Quick-opening type water-cooling structure polycrystalline silicon reducing furnace |
| 11/26/2008 | CN101311380A Method for manufacturing semiconductor of iii-v group compounds |
| 11/26/2008 | CN101311379A Gallium nitride substrate and gallium nitride film deposition method |
| 11/26/2008 | CN101311365A Method for preparing room-temperature ferromagnetic Fe doped ZnO nanometer wire |
| 11/26/2008 | CN101311361A Chinese character í«zhi-shapedí» nano-belt of periodic SnO2 and method for preparing same |
| 11/26/2008 | CN101311357A Method for preparing indium oxide single crystal epitaxial film |
| 11/26/2008 | CN101311351A Polycrystalline silicon rod for floating zone method and a process for the production thereof |
| 11/26/2008 | CN101311340A Method for preparing silicon inverse epitaxial wafer and special equipment thereof |
| 11/26/2008 | CN101311339A Process for discriminating high growth rate chemical vapour deposition diamond single crystal |
| 11/26/2008 | CN101311336A Film formation apparatus and method for using the same |
| 11/26/2008 | CN100438088C Method for producing light-emitting device |
| 11/26/2008 | CN100437905C Formation of lattice-tuning semiconductor substrates |
| 11/26/2008 | CN100436315C Silicon production process |
| 11/25/2008 | US7455730 Method for growth of silicon carbide single crystal, silicon carbide seed crystal, and silicon carbide single crystal |