| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 03/04/2009 | CN100465356C A GaN wafer with high surface quality and a production method thereof |
| 03/03/2009 | US7498244 Method for fabricating GaN-based nitride layer |
| 03/03/2009 | US7498059 Method for growing thin films |
| 03/03/2009 | US7497906 Seed crystal fixing apparatus and a method for fixing the seed crystal |
| 03/03/2009 | US7497905 Ternary nitride-based buffer layer of a nitride-based light-emitting device and a method for manufacturing the same |
| 02/26/2009 | WO2009026269A1 Stabilizing 4h polytype during sublimation growth of sic single crystals |
| 02/26/2009 | US20090050913 Method for achieving low defect density algan single crystal boules |
| 02/26/2009 | DE112006003485T5 Vorrichtung zum Herstellen einer Halbleiterdünnschicht An apparatus for manufacturing a semiconductor thin film |
| 02/25/2009 | EP2027059A1 Method of manufacturing silicon nanotubes using doughnut-shaped catalytic metal layer |
| 02/25/2009 | CN101373731A Electrostatic chuck apparatus and temperature control method thereof |
| 02/24/2009 | US7494881 Methods for selective placement of dislocation arrays |
| 02/24/2009 | US7494546 Method of growing insulating, semiconducting, and conducting group III-nitride thin films and coatings, and use as radiation hard coatings for electronics and optoelectronic devices |
| 02/24/2009 | US7494545 Epitaxial deposition process and apparatus |
| 02/19/2009 | WO2008152126A4 Device for coating substrates disposed on a susceptor |
| 02/19/2009 | WO2008146126A3 Reactor for growing crystals with cooled inlets |
| 02/19/2009 | WO2008142115A4 Device for coating a plurality of closest-packed substrates arranged on a susceptor |
| 02/18/2009 | EP2025779A2 Gallium nitride crystal growth method, gallium nitride crystal substrate, epi-wafer manufacturing method, and epi-wafer |
| 02/18/2009 | EP2024991A1 Method for producing a doped iii-n solid crystal and a free-standing doped iii-n substrate, and doped iii-n solid crystal and free-standing doped iii-n substrate |
| 02/18/2009 | EP1570108B1 Susceptor system |
| 02/18/2009 | CN101368289A Deposition boiler tube |
| 02/12/2009 | US20090038934 Apparatus and method for diamond production |
| 02/12/2009 | US20090038541 Production of bulk silicon carbide with hot-filament chemical vapor deposition |
| 02/12/2009 | DE102008026828A1 Bildung von nitrid-basierten optoelektronischen und elektronischen Bauteilstrukturen auf gitterangepassten Substraten Formation of nitride-based optoelectronic and electronic device structures on lattice matched substrates |
| 02/11/2009 | EP2023381A1 Method of selectively forming atomically flat plane on diamond surface, diamond substrate produced by the method, and semiconductor element employing the same |
| 02/11/2009 | EP2021533A1 Low-temperature doping processes for silicon wafer devices |
| 02/11/2009 | EP2021532A1 Source container of a vpe reactor |
| 02/11/2009 | CN101363133A Method for cleaning reaction cavity interior |
| 02/10/2009 | US7488922 Susceptor system |
| 02/10/2009 | US7488455 Apparatus for the production of carbon nanotubes |
| 02/10/2009 | US7488386 Atomic layer deposition methods and chemical vapor deposition methods |
| 02/10/2009 | US7488385 Method for epitaxial growth of a gallium nitride film separated from its substrate |
| 02/05/2009 | WO2009017829A1 Control of strain through thickness in epitaxial films via vertical nanocomposite heteroepitaxy |
| 02/05/2009 | US20090031947 Reactor |
| 02/05/2009 | DE19653124B4 Synthese von phosphor-dotiertem Diamant Synthesis of phosphorus-doped diamond |
| 02/05/2009 | DE102008029784A1 Einkristalline Metallnanostrukturen aus Binärlegierung und Verfahren zu deren Herstellung Metal monocrystalline nanostructures binary alloy and process for their preparation |
| 02/04/2009 | CN101359594A Semiconductor manufacture device, semiconductor manufacture method and electric machine |
| 02/04/2009 | CN100459181C Nanostructure, electronic device having such nanostructure and method of preparing nanostructure |
| 02/03/2009 | US7485583 Method for fabricating superlattice semiconductor structure using chemical vapor deposition |
| 02/03/2009 | US7485484 Group III-V crystal |
| 02/03/2009 | US7485340 Thin metal films by atomic layer deposition: tungsten nucleation layer over a silicon wafer; copper film from CuCl and triethylboron; vapor phase pulses in inert gas |
| 02/03/2009 | US7485189 Thin film deposition device using an FTIR gas analyzer for mixed gas supply |
| 01/29/2009 | WO2009013914A1 Sic epitaxial substrate and process for producing the same |
| 01/29/2009 | US20090026459 Epitaxial and polycrystalline growth of si1-x-ygexcy and si1-ycy alloy layers on si by uhv-cvd |
| 01/29/2009 | US20090026417 Gallium Nitride Crystal Growth Method, Gallium Nitride Crystal Substrate, Epi-Wafer Manufacturing Method, and Epi-Wafer |
| 01/29/2009 | US20090025629 Substrate for Growing Compound Semiconductor and Epitaxial Growth Method |
| 01/28/2009 | EP2019155A2 Gallium nitride substrate and gallium nitride film deposition method |
| 01/28/2009 | CN101353819A Gallium nitride crystal growth method, gallium nitride crystal substrate, epi-wafer manufacturing method, and epi-wafer |
| 01/28/2009 | CN101353818A Gallium nitride growth method using CVD and HVPE |
| 01/28/2009 | CN101353816A Growth method of tungsten oxide pencil-shaped nanostructured array |
| 01/28/2009 | CN101353813A Free-standing (Al, Ga, In)N and parting method for forming same |
| 01/27/2009 | US7482235 Semiconductor device and method of manufacturing the same |
| 01/27/2009 | US7482068 n-type or a p-type conductivity; drift zone of high voltage power devices; low cost; swiches |
| 01/27/2009 | US7481880 Mask and method for crystallizing amorphous silicon |
| 01/27/2009 | US7481879 Diamond single crystal substrate manufacturing method and diamond single crystal substrate |
| 01/22/2009 | WO2009011816A1 Method of producing large area sic substrates |
| 01/22/2009 | DE10250915B4 Verfahren zur Abscheidung eines Materials auf einem Substratwafer A method for depositing a material on a substrate wafer |
| 01/21/2009 | EP2016614A1 Method of zinc oxide film grown on the epitaxial lateral overgrowth gallium nitride template |
| 01/21/2009 | EP2016209A2 Process for producing a iii-n bulk crystal and a free-standing iii -n substrate, and iii -n bulk crystal and free-standing ih-n substrate |
| 01/21/2009 | EP2016205A2 Semiconductor buffer structures |
| 01/21/2009 | CN201183822Y Thin film deposition apparatus |
| 01/21/2009 | CN101351578A Differentiated-temperature reaction chamber |
| 01/21/2009 | CN101350326A Method for monitoring base mounting center of germanium silicon epitaxial reaction cavity |
| 01/21/2009 | CN101350294A System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy |
| 01/21/2009 | CN101348936A Orientational alignment carbon nano-tube and carbon coating cobalt nano-particle complex and preparation thereof |
| 01/21/2009 | CN100454489C Methods for deposition of semiconductor material |
| 01/21/2009 | CN100454488C Group III nitride crystal substrate, method of its manufacture, and group-III nitride semiconductor device |
| 01/20/2009 | US7479658 Epitaxial wafers, method for manufacturing of epitaxial wafers, method of suppressing bowing of these epitaxial wafers and semiconductor multilayer structures using these epitaxial wafers |
| 01/20/2009 | US7479443 Germanium deposition |
| 01/20/2009 | US7479188 Process for producing GaN substrate |
| 01/20/2009 | US7479187 Method for manufacturing silicon epitaxial wafer |
| 01/15/2009 | WO2007126463A3 Low-temperature dielectric formation for devices with strained germanium-containing channels |
| 01/14/2009 | CN101345184A Plasma processing apparatus, gas dispensing device and gas delivery method |
| 01/14/2009 | CN101343777A Nitride material extension apparatus |
| 01/14/2009 | CN101343776A Chemical vapor deposition preparation apparatus method for oxide |
| 01/14/2009 | CN100452449C Nitride semiconductors on silicon substrate and method of manufacturing the same |
| 01/14/2009 | CN100451181C Method for carrying out epitaxial growth of single crystal film of nitride by using mask in situ |
| 01/14/2009 | CN100451180C Method for growing ZnO mono-crystalline by closed pipe chemical vapour transmission |
| 01/13/2009 | US7476895 Method of fabricating n-type semiconductor diamond, and semiconductor diamond |
| 01/13/2009 | US7476596 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices |
| 01/08/2009 | US20090010822 Apparatus for the production of carbon nanotubes |
| 01/07/2009 | EP1381710B1 Process and device for the deposition of a microcrystalline silicon layer on a substrate |
| 01/07/2009 | EP1138063B1 Fabrication of gallium nitride layers by lateral growth |
| 01/07/2009 | CN101338452A High-density carbon nanotube array and method for preparing same |
| 01/06/2009 | US7473925 P-type group II-VI semiconductor compounds |
| 01/06/2009 | US7473316 Method of growing nitrogenous semiconductor crystal materials |
| 01/06/2009 | US7473315 AlxInyGa1-x-yN mixture crystal substrate, method of growing AlxInyGa1-x-yN mixture crystal substrate and method of producing AlxInyGa1-x-yN mixture crystal substrate |
| 01/06/2009 | CA2352132C Method of producing a single crystal gan substrate and single crystal gan substrate |
| 01/02/2009 | DE102007028293A1 Plasmareaktor und Verfahren zur Herstellung einkristalliner Diamantschichten A plasma reactor and method for producing single-crystal diamond films |
| 01/01/2009 | US20090004093 Materials and methods for the manufacture of large crystal diamonds |
| 01/01/2009 | US20090001329 Rare earth-oxides, rare earth-nitrides, rare earth-phosphies, and ternary alloys with silicon |
| 01/01/2009 | US20090000541 Atomic layer epitaxy processed insulation |
| 12/31/2008 | WO2009001833A1 Epitaxial wafer and method for manufacturing the same |
| 12/31/2008 | EP2008297A1 Epitaxial growth of iii-nitride compound semiconductors structures |
| 12/31/2008 | EP1391941B1 Production method for a light emitting element |
| 12/31/2008 | EP1373130B1 Process and apparatus for the production of carbon nanotubes |
| 12/31/2008 | CN101336314A Process for growth of low dislocation density gan |
| 12/31/2008 | CN101333680A Method and apparatus for quickly maintaining epitaxy end gas processor |
| 12/31/2008 | CN101333679A Method and apparatus for shortening maintenance time of epitaxy end gas processor |
| 12/31/2008 | CN101333678A Control pipeline for distributing and evaluating supply system of trichlorosilane or silicon tetrachloride |
| 12/31/2008 | CN101333677A 300mm thin-film epitaxy process |