| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 04/29/2009 | CN100483627C Gan substrate and method of fabricating the same, nitride semiconductor device and method of fabricating the same |
| 04/29/2009 | CN100482857C Systems and methods for epitaxially depositing films on semiconductor substrates |
| 04/28/2009 | US7524691 Method of manufacturing group III nitride substrate |
| 04/23/2009 | US20090104758 Gallium nitride materials and methods |
| 04/23/2009 | US20090101063 Method of Manufacturing GaN Crystal Substrate |
| 04/22/2009 | EP2051286A1 Semiconductor manufacturing apparatus |
| 04/22/2009 | CN101415865A Cluster tool for epitaxial film formation |
| 04/22/2009 | CN100480437C Method for preparing oriented growth dielectric-constant adjustable strontium lead titanate film |
| 04/21/2009 | US7521339 GaN single crystal substrate and method of making the same |
| 04/21/2009 | US7521282 Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device |
| 04/21/2009 | US7521034 3C-SiC nanowhisker |
| 04/21/2009 | US7520930 Silicon carbide single crystal and a method for its production |
| 04/16/2009 | WO2009048056A1 Compound semiconductor epitaxial wafer and process for producing the same |
| 04/16/2009 | WO2008127220A3 Methods for in-situ generation of reactive etch and growth specie in film formation processes |
| 04/16/2009 | US20090098742 System and Process for Heating Semiconductor Wafers by Optimizing Absorption of Electromagnetic Energy |
| 04/16/2009 | DE102004010676B4 Verfahren zur Herstellung eines Halbleiterwafers A process for producing a semiconductor wafer |
| 04/15/2009 | EP2048267A1 Process for producing single-crystal substrate with off angle |
| 04/15/2009 | EP2047013A1 Wide bandgap semiconductor materials |
| 04/15/2009 | CN201220961Y Earthing structure, heater and chemical vapor deposition apparatus |
| 04/15/2009 | CN101410950A Growth method using nanostructure compliant layers and HVPE for producing high quality compound semiconductor materials |
| 04/15/2009 | CN101409233A Method for depositing group III/V compounds |
| 04/15/2009 | CN100479221C Method for preparing tin-oxide mono-crystal film |
| 04/14/2009 | US7518151 Gallium nitride/sapphire thin film having reduced bending deformation |
| 04/14/2009 | US7517720 Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device |
| 04/14/2009 | US7517557 Oxide films, a method of producing the same and structures having the same |
| 04/09/2009 | WO2009046261A1 Method for depositing group iii/v compounds |
| 04/09/2009 | WO2009045445A1 Low pressure method annealing diamonds |
| 04/09/2009 | WO2009044638A1 Gan epitaxial substrate, semiconductor device and methods for manufacturing gan epitaxial substrate and semiconductor device |
| 04/09/2009 | WO2006091448A3 Chemical vapor deposition reactor having multiple inlets |
| 04/09/2009 | US20090092815 Method and apparatus for fabricating crack-free group iii nitride semiconductor materials |
| 04/09/2009 | CA2672177A1 Gan epitaxial substrate, semiconductor device and methods for manufacturing gan epitaxial substrate and semiconductor device |
| 04/08/2009 | EP2045374A2 Method of manufacturing a GaN substrate and a GaN epitaxial wafer |
| 04/08/2009 | EP2045373A2 Epitaxial reactor for the large-scale production of wafers |
| 04/08/2009 | EP2044244A1 Method of manufacturing substrates having improved carrier lifetimes |
| 04/08/2009 | EP1972002B1 Simplified method of producing an epitaxially grown structure |
| 04/08/2009 | CN101405437A Apparatus and methods for preparation of high-purity silicon rods using mixed core means |
| 04/08/2009 | CN101404248A GaN single-crystal substrate and method for producing GaN single crystal |
| 04/08/2009 | CN100477089C Crystal growing method for single-crystal gallium nitride |
| 04/08/2009 | CN100476045C Gallium-nitride metal organic-matter chemical gas-phase depositing apparatus for super-high vertical reactor |
| 04/07/2009 | US7514372 Epitaxial growth of relaxed silicon germanium layers |
| 04/07/2009 | CA2432213C Silicon production process |
| 04/02/2009 | WO2009040580A1 Non-polar iii-v nitride semiconductor and growth method |
| 04/02/2009 | WO2009040579A1 Non-polar iii-v nitride material and production method |
| 04/02/2009 | WO2009040337A1 Method of manufacturing a structure comprising a substrate and a layer deposited on one of its faces |
| 04/02/2009 | US20090087564 Substrate processing system |
| 04/02/2009 | US20090084288 Vapor deposition using amine containing organosilicon compound; integrated circuits; disilane derivative compound that is fully substituted with alkylamino and/or dialkylamino functional groups |
| 04/02/2009 | DE102005045339B4 Epitaxierte Siliciumscheibe und Verfahren zur Herstellung von epitaxierten Siliciumscheiben Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafers |
| 04/02/2009 | DE102005045338B4 Epitaxierte Siliciumscheibe und Verfahren zur Herstellung von epitaxierten Siliciumscheiben Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafers |
| 04/01/2009 | EP2041797A2 Methods and apparatus for depositing a microcrystalline silicon film for photovoltaic device |
| 04/01/2009 | EP2041775A1 Automatically replaceable apparatus for collecting byproducts and the controlling method thereof in equipment producing semiconductor |
| 04/01/2009 | CN101400835A Method for continual preparation of polycrystalline silicon using a fluidized bed reactor |
| 04/01/2009 | CN101397693A Method for high quality single crystal indium nitride film growth |
| 04/01/2009 | CN100474511C Gallium nitride crystal, homoepitaxial gallium-nitride-based devices and method for producing the same |
| 03/26/2009 | WO2009039343A1 Pecvd process chamber with cooled backing plate |
| 03/25/2009 | EP2039653A2 Reactor for polycrystalline silicon and polycrystalline silicon production method |
| 03/25/2009 | EP2038456A2 High volume delivery system for gallium trichloride |
| 03/25/2009 | EP1491255A4 Method for carrying out homogeneous and heterogeneous chemical reactions using plasma |
| 03/25/2009 | CN101392406A Method for preparing solar energy polycrystalline silicon sheet |
| 03/25/2009 | CN101392364A Pre-cleaning method of reactive system |
| 03/25/2009 | CN100472749C Substrate with determinate thermal expansion coefficient |
| 03/25/2009 | CN100472002C Reduction of carrot defects in silicon carbide epitaxy |
| 03/25/2009 | CN100471992C Semiconductor manufacture reactor |
| 03/24/2009 | US7507642 Vapor-phase growth method, semiconductor manufacturing method and semiconductor device manufacturing method |
| 03/24/2009 | US7507293 Photonic crystals with nanowire-based fabrication |
| 03/19/2009 | WO2009035095A1 EPITAXIAL SiC SINGLE CRYSTAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SiC SINGLE CRYSTAL SUBSTRATE |
| 03/19/2009 | US20090074963 Oxide films, a method of producing the same and structures having the same |
| 03/19/2009 | US20090071394 AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE, METHOD OF GROWING AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE AND METHOD OF PRODUCING AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE |
| 03/18/2009 | EP2037013A2 Method for preparing substrate for growing gallium nitride and method for preparing gallium nitride substrate |
| 03/18/2009 | EP2036117A1 Method of manufacturing silicon nanowires using silicon nanodot thin film |
| 03/18/2009 | CN101388330A Semiconductor manufacture device and method by heating substrate |
| 03/18/2009 | CN101387008A Carbon nanotube growing apparatus |
| 03/18/2009 | CN100470725C Method to reduce stacking fault nucleation sites and reduce VF drift in bipolar devices |
| 03/17/2009 | US7504324 Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method |
| 03/17/2009 | US7504323 GaN single crystal substrate and method of making the same |
| 03/17/2009 | US7504152 A particle with a base having a shape of an inverted truncated right circular cone with a diameter of 1 nm to 100 microns, a height of 5 nm to 1000 microns, and aspect ratio of 5 to 5000; capable of forming a planar array, a two-dimensional lattice, or a nanotube |
| 03/12/2009 | US20090068832 Thin films |
| 03/12/2009 | US20090068822 Method for preparing substrate for growing gallium nitride and method for preparing gallium nitride substrate |
| 03/12/2009 | US20090064922 Methods of hyperdoping semiconductor materials and hyperdoped semiconductor materials and devices |
| 03/11/2009 | CN101383279A HVPE reactor for preparing nitride semiconductor substrate |
| 03/11/2009 | CN100468654C Light irradiation heat treatment method and light irradiation heat treatment apparatus |
| 03/11/2009 | CN100468631C Susceptor |
| 03/11/2009 | CN100468625C Methods of selective deposition of heavily doped epitaxial sige |
| 03/11/2009 | CN100467988C System and method for controlling movement of a workpiece in a thermal processing system |
| 03/11/2009 | CN100467679C Chromatic carbon silicon stone monocrystal and preparation method thereof and preparation of artificial gem |
| 03/10/2009 | US7501370 Producing devices for semiconductor wafer fabrication; molding powder material, sintering, strong acid washing and oxidation treatment; reducing or eliminating iron, copper, nickel and chromium content |
| 03/10/2009 | US7501330 Methods of forming a high conductivity diamond film and structures formed thereby |
| 03/10/2009 | US7501024 Carbon nanohorn producing device and carbon nanohorn producing method |
| 03/10/2009 | US7501023 Method and apparatus for fabricating crack-free Group III nitride semiconductor materials |
| 03/05/2009 | WO2009028974A1 Method for the production of semiconductor ribbons from a gaseous feedstock |
| 03/05/2009 | US20090056619 Halogen Assisted Physical Vapor Transport Method for Silicon Carbide Growth |
| 03/05/2009 | US20090056618 Method for producing group III Nitride single crystal |
| 03/05/2009 | DE10196596B4 Verfahren zur Herstellung einer Kristallschicht in einer Verbindungshalbleiter-Mehrschichtsstruktur A process for producing a crystal layer in a compound semiconductor multilayer structure |
| 03/04/2009 | EP2031103A1 Method for manufacturing gallium nitride crystal and gallium nitride wafer |
| 03/04/2009 | EP1313891B1 Cvd coating device |
| 03/04/2009 | CN101379226A A method of growing semiconductor heterostructures based on gallium nitride |
| 03/04/2009 | CN101379225A Materials and methods for the manufacture of large crystal diamonds |
| 03/04/2009 | CN101378018A Method for developing SiGe material with low temperature using UHV/CVD |
| 03/04/2009 | CN101378003A Alternate gas delivery and evacuation system for plasma processing apparatuses |
| 03/04/2009 | CN101377009A Semi-conducting material manufacturing apparatus |
| 03/04/2009 | CN100466178C Method for producing group III nitride crystal, group III nitride crystal obtained by such method, and group III nitride substrate applying the group III nitride crystal |