| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
|---|
| 07/21/1994 | WO1994016125A1 Process for vapor-phase diamond synthesis |
| 07/21/1994 | WO1994015707A2 Device for simultaneously letting in at least one process gas into a plurality of reaction chambers |
| 07/21/1994 | WO1994011548A3 Method for fabricating diamond films on nondiamond substrates and related structures |
| 07/20/1994 | EP0606751A1 Method for depositing polysilicon films having improved uniformity and apparatus therefor |
| 07/20/1994 | EP0606737A1 Process and apparatus for growing a silicon epitaxial layer, with a control of the mass flows of the reactive gases |
| 07/19/1994 | US5330610 Forming thin films |
| 07/13/1994 | EP0605725A1 Apparatus for introducing gas, and apparatus and method for epitaxial growth |
| 07/12/1994 | US5329095 Thermal treatment apparatus utilizing heated lid |
| 07/12/1994 | US5328676 Vapor deposition fullerenes and energizing to form ions then coating and growing |
| 07/12/1994 | US5328549 Method of producing sheets of crystalline material and devices made therefrom |
| 07/05/1994 | US5327454 Bridge for connecting cores in a manufacturing equipment of polycrystal silicon |
| 07/05/1994 | US5326425 Preparation of tertiarybutyldimethylantimony and use thereof |
| 06/29/1994 | EP0604096A1 Fused quartz diffusion tubes for semiconductor manufacture |
| 06/28/1994 | US5324920 Heat treatment apparatus |
| 06/28/1994 | US5324540 System and method for supporting and rotating substrates in a process chamber |
| 06/28/1994 | US5324386 Method of growing group II-IV mixed compound semiconductor and an apparatus used therefor |
| 06/23/1994 | WO1994014186A1 Substrates for the growth of 3c-silicon carbide |
| 06/22/1994 | CA2110009A1 Fused quartz diffusion tubes for semiconductor manufacture |
| 06/21/1994 | US5323484 Heating apparatus with multilayer insulating structure |
| 06/21/1994 | US5322813 Method of making supersaturated rare earth doped semiconductor layers by chemical vapor deposition |
| 06/21/1994 | US5322711 Continuous method of covering inorganic fibrous material with particulates |
| 06/21/1994 | US5322567 Particulate reduction baffle with wafer catcher for chemical-vapor-deposition apparatus |
| 06/14/1994 | US5320907 Crystal article and method for forming same |
| 06/14/1994 | CA1330194C Unstrained defect-free epitaxial mismatched heterostructures and method of fabrication |
| 06/14/1994 | CA1330193C Method for making artificial layered high-t_ superconductors |
| 06/14/1994 | CA1330192C Method of forming crystals |
| 06/14/1994 | CA1330191C Method for forming crystal and crystal article obtained by said method |
| 06/08/1994 | EP0600276A2 Process for production of a laterally limited monocrystal area by selective epitaxy and its application for production of a bipolar transistor as well as well as a MOS-transistor |
| 06/07/1994 | US5318633 Heat treating apparatus |
| 05/31/1994 | US5317492 Rapid thermal heating apparatus and method |
| 05/31/1994 | US5316793 Multilayer element formed by vapor deposition of coatings by injection of precursor gas |
| 05/31/1994 | US5316615 Surfactant-enhanced epitaxy |
| 05/31/1994 | US5316472 Vertical boat used for heat treatment of semiconductor wafer and vertical heat treatment apparatus |
| 05/26/1994 | WO1994011901A1 Apparatus for forming low-temperature oxide films and method of forming low-temperature oxide films |
| 05/26/1994 | WO1994011548A2 Method for fabricating diamond films on nondiamond substrates and related structures |
| 05/25/1994 | EP0598424A2 Device for removing dissolved gas from a liquid |
| 05/25/1994 | EP0598361A1 Initiation and bonding of diamond and other thin films |
| 05/24/1994 | US5314871 Substrate of single crystal of oxide, device using said substrate and method of producing said superconductive device |
| 05/24/1994 | US5314570 Process and apparatus for the production of diamond |
| 05/24/1994 | US5314569 Controlled heating and vapor phase growth of monocrystalline filaments in apertures containing solutions of whisker material, then cooling to taper tip |
| 05/24/1994 | CA1329791C Process for making diamond, doped diamond, diamond-cubic boron nitride composite films |
| 05/24/1994 | CA1329756C Method for forming crystalline deposited film |
| 05/17/1994 | US5312983 Organometallic tellurium compounds useful in chemical vapor deposition processes |
| 05/17/1994 | US5312519 Method of cleaning a charged beam apparatus |
| 05/17/1994 | US5312245 Particulate trap for vertical furnace |
| 05/17/1994 | CA1329461C Process of producing aluminum and titanium nitrides |
| 05/10/1994 | US5310696 Chemical method for the modification of a substrate surface to accomplish heteroepitaxial crystal growth |
| 05/10/1994 | US5310596 Multilayer diamond structure of carbon with crystal structure containing columns |
| 05/10/1994 | US5310447 Single-crystal diamond of very high thermal conductivity |
| 05/03/1994 | US5308788 Temperature controlled process for the epitaxial growth of a film of material |
| 05/03/1994 | US5308433 Deposition of thin films |
| 04/27/1994 | EP0594030A2 Process for the fabrication of a wafer having a moncrystalline silicium carbide layer |
| 04/26/1994 | US5306660 Technique for doping mercury cadmium telluride MOCVD grown crystalline materials using free radical transport of elemental indium and apparatus therefor |
| 04/26/1994 | US5306386 Arsenic passivation for epitaxial deposition of ternary chalcogenide semiconductor films onto silicon substrates |
| 04/26/1994 | US5306348 Metal growth accelerator shell for the chemical vaporization deposition of diamond |
| 04/26/1994 | US5306139 Suction adhesion-type holder |
| 04/26/1994 | CA1328796C Method and apparatus for low temperature, low pressure chemical vapor deposition of epitaxial silicon layers |
| 04/26/1994 | CA1328784C Article having surface layer of uniformly oriented, crystalline, organic microstructures |
| 04/21/1994 | DE4234998A1 New cyclic silicon and germanium amide cpds. - used in deposition of element which can be vaporised in vacuum or inert gas stream without decomposition, useful in semiconductor film prod |
| 04/19/1994 | US5305417 Apparatus and method for determining wafer temperature using pyrometry |
| 04/19/1994 | US5304820 Substrate is doped with the atoms of group 2, 3, 5 and 6; single crystal growth by utilization of nucleation density difference |
| 04/19/1994 | US5304405 Etching with inert gas in vacuum vessel |
| 04/19/1994 | US5304247 Vapor deposition |
| 04/14/1994 | WO1994008077A1 Method for heteroepitaxial diamond film development |
| 04/14/1994 | WO1994008076A1 Heteroepitaxially deposited diamond |
| 04/13/1994 | EP0591496A1 Use of organo-metallic compounds for precipitating metals on substrates |
| 04/13/1994 | CN1085353A Supersaturated rare earth doped semiconductor layers by chemical vapor deposition |
| 04/13/1994 | CN1024236C Method for obtaining heterojunction semiconductor and super crystal lattice materials and equipment thereof |
| 04/12/1994 | US5302555 Mixing silane plasma gases with oxygen, reduced pressure |
| 04/12/1994 | US5302232 Composite crystal structure |
| 04/12/1994 | US5302231 CVD diamond by alternating chemical reactions |
| 04/12/1994 | US5302209 Apparatus for manufacturing semiconductor device |
| 04/07/1994 | DE4233085A1 Heteroepitaktisch abgeschiedenes Diamant Heteroepitaxial diamond deposited |
| 04/06/1994 | EP0590900A1 Cylindrical apparatus for growth of epitaxial layers |
| 04/06/1994 | EP0590560A2 Thin-film superconductor and method of fabricating the same |
| 04/05/1994 | US5300484 MBE or MO-MBE process for forming Bi-Sr-Ca-Cu-O superconducting thin films |
| 04/05/1994 | US5300185 Method of manufacturing III-V group compound semiconductor |
| 03/31/1994 | WO1994007124A1 Extraction of spatially varying dielectric function from ellipsometric data |
| 03/30/1994 | EP0589464A1 Epitaxial growth of diamond from vapor phase |
| 03/30/1994 | EP0423327B1 Apparatus and method for treating flat substrates under reduced pressure |
| 03/30/1994 | EP0386225B1 Photochemical deposition of high purity gold films |
| 03/29/1994 | US5298452 Method and apparatus for low temperature, low pressure chemical vapor deposition of epitaxial silicon layers |
| 03/29/1994 | US5298286 Method for fabricating diamond films on nondiamond substrates and related structures |
| 03/29/1994 | US5298285 Vapor deposition of diamond bonded to carbide substrate |
| 03/29/1994 | US5298278 Chemical vapor phase growth method and chemical vapor phase growth apparatus |
| 03/29/1994 | US5298107 Processing method for growing thick films |
| 03/22/1994 | US5296207 Substrate having surface layer that enables growth of column crystalline diamond from gas phase, low pressure diamond layer on substrate, grown layer depleted in heavier isotopes |
| 03/22/1994 | US5296088 Controlling gas flow |
| 03/22/1994 | US5296087 Crystal formation method |
| 03/15/1994 | US5294465 Desorbing passivating atoms on a substrate by applying voltage from a probe; absorbing gas molecules on activated surface; bonding |
| 03/15/1994 | US5294286 Alternating supply of dichlorosilane and evacuating; counting cycles; semiconductors |
| 03/15/1994 | US5294285 Process for the production of functional crystalline film |
| 03/15/1994 | CA1327772C Method for synthesis of diamond |
| 03/09/1994 | EP0586321A2 Supersaturated rare earth doped semiconductor layers by CVD |
| 03/08/1994 | US5292554 Deposition apparatus using a perforated pumping plate |
| 03/03/1994 | WO1994004461A1 Methods and apparati for producing fullerenes |
| 03/02/1994 | EP0584676A1 Closed loop semiconductor fabrication method and system |
| 03/02/1994 | EP0407457B1 Precursors for metal fluoride deposition and use thereof |
| 03/01/1994 | US5290993 Microwave plasma processing device |
| 03/01/1994 | US5290393 Crystal growth method for gallium nitride-based compound semiconductor |