| Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192) |
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| 03/14/1995 | US5397920 Light transmissive, electrically-conductive, oxide film and methods of production |
| 03/14/1995 | US5397895 Photoionization mass spectroscopy flux monitor |
| 03/14/1995 | CA2125212A1 Method for producing a precise alloy composition from input variables under nonlinear incorporation conditions |
| 03/01/1995 | EP0640994A2 Superconductor thin film and manufacturing method |
| 03/01/1995 | EP0640610A2 Liquid indium source |
| 03/01/1995 | EP0559787A4 Defect-induced control of the structure of boron nitride |
| 02/16/1995 | WO1995004840A1 An improved method of forming cubic boron nitride films |
| 02/14/1995 | USRE34861 Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide |
| 02/09/1995 | WO1995004171A1 Process for producing high-resistance silicon carbide |
| 02/07/1995 | US5387309 Process for the measurement of the thickness and refractive index of a thin film on a substrate, and an apparatus for carrying out the process |
| 02/01/1995 | EP0637059A2 Direct MOMBE and MOVPE growth of II-VI materials on silicon |
| 02/01/1995 | EP0637049A1 Process for making an electric conducting point of doped silicon and application of the process for manufacturing components used in vacuum electronics |
| 01/31/1995 | US5385862 Method for the preparation and doping of highly insulating monocrystalline gallium nitride thin films |
| 01/17/1995 | US5382542 Method of growth of II-VI materials on silicon using As passivation |
| 01/11/1995 | EP0633331A1 Process for preparing high crystallinity oxide thin film |
| 01/10/1995 | US5380683 Ionized cluster beam deposition of sapphire and silicon layers |
| 01/10/1995 | US5380595 Carbon cluster film having electrical conductivity and method of preparing the same |
| 01/10/1995 | US5379719 Method of deposition by molecular beam epitaxy |
| 01/04/1995 | EP0632144A2 Method of purging and pumping vacuum chamber to ultra-high vacuum |
| 12/28/1994 | EP0631332A1 Method of manufacturing Y-Ba-Cu-O superconducting thin film |
| 12/20/1994 | US5374318 Process for the deposition of diamond films using low energy, mass-selected ion beam deposition |
| 12/20/1994 | US5373806 Particulate-free epitaxial process |
| 12/14/1994 | EP0627989A1 A-axis high temperature superconducting films with preferential in-plane alignment |
| 12/13/1994 | US5372089 Method of forming single-crystalline thin film |
| 12/06/1994 | US5370855 Conversion of fullerenes to diamond |
| 11/29/1994 | US5368681 Method for the deposition of diamond on a substrate |
| 11/22/1994 | US5365876 Crystal face temperature determination means |
| 11/15/1994 | US5365054 Optical detector having a plurality of matrix layers with cobalt disilicide particles embedded therein |
| 11/15/1994 | US5364492 Accurately measuring atomic flux |
| 11/15/1994 | US5363794 Uniaxial thin film structures formed from oriented bilayers and multilayers |
| 11/15/1994 | US5363694 Ampoule rupture detection system |
| 11/15/1994 | CA1333039C Molecular beam epitaxy apparatus |
| 11/15/1994 | CA1333038C Molecular beam epitaxy apparatus |
| 11/01/1994 | US5360764 Method of fabricating laser controlled nanolithography |
| 10/25/1994 | US5358927 Depositing layers of high temperature superconducting oxides on crystalline substrate |
| 10/25/1994 | US5358925 Silicon substrate having YSZ epitaxial barrier layer and an epitaxial superconducting layer |
| 10/20/1994 | DE4311815A1 Method for producing essentially defect-free lattice-defect conformal layers on monocrystalline bulk material |
| 10/13/1994 | WO1994023096A1 DEVICE AND PROCESS FOR PRODUCING SiC SINGLE CRYSTALS |
| 10/12/1994 | EP0619615A2 Arsenic passivation for epitaxial deposition of ternary chalcogenide semiconductor films onto silicon substrates |
| 10/12/1994 | EP0619283A2 Substrate having a superconductor layer |
| 10/11/1994 | CA1332342C Process for producing crystal |
| 10/06/1994 | DE4310745A1 Method for preparing SiC single crystals and appliance for implementing the method |
| 09/29/1994 | WO1994021557A1 Conversion of fullerenes to diamond |
| 09/28/1994 | EP0617147A2 Diamond crystal forming method |
| 09/27/1994 | US5350607 Ionized cluster beam deposition of sapphire |
| 09/27/1994 | US5350606 Single crystal ferroelectric barium titanate films |
| 09/22/1994 | DE4409199A1 Method and device for automatic cleaning of a vacuum metallisation container |
| 09/13/1994 | US5347157 Multilayer structure having a (111)-oriented buffer layer |
| 09/01/1994 | WO1994019822A1 Laser controlled nanolithography |
| 08/30/1994 | CA1331730C Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide |
| 08/23/1994 | US5340793 Layer-by-layer process for forming Bi -containing oxide superconducting films |
| 08/17/1994 | EP0610175A1 High temperature superconducting films on aluminum oxide substrates |
| 08/09/1994 | US5336633 Method of growing single crystal silicon on insulator |
| 08/02/1994 | US5334252 Method of and apparatus for preparing oxide superconducting film |
| 07/27/1994 | EP0527915B1 Diamond-like carbon material produced by laser plasma deposition |
| 07/27/1994 | EP0425589B1 Plasma/radiation assisted molecular beam epitaxy method and apparatus |
| 07/19/1994 | US5330855 Planar epitaxial films of SnO2 |
| 07/19/1994 | US5330611 Wear resistant semiconductor |
| 07/12/1994 | US5328676 Vapor deposition fullerenes and energizing to form ions then coating and growing |
| 07/06/1994 | EP0250603B1 Process for forming thin film of compound semiconductor |
| 07/05/1994 | US5326424 Cubic boron nitride phosphide films |
| 06/28/1994 | US5324714 Growth of a,b-axis oriented perovskite thin films over a buffer/template layer |
| 06/22/1994 | EP0602568A2 A multilayer structure having a (111)-oriented buffer layer |
| 06/21/1994 | US5323023 Epitaxial magnesium oxide as a buffer layer on (111) tetrahedral semiconductors |
| 06/21/1994 | US5322817 In situ growth of TL-containing oxide superconducting films |
| 06/16/1994 | DE4325708C1 Prodn. of electrically conducting point made of doped silicon@ - by forming mask with opening on substrate and producing doped silicon@ paint on exposed surface of substrate |
| 06/15/1994 | EP0601513A2 Method for forming deposited film |
| 06/14/1994 | US5321260 Effusion method and an effusion cell for forming molecular beams |
| 06/14/1994 | CA1330193C Method for making artificial layered high-t_ superconductors |
| 06/09/1994 | WO1994012698A1 Process for growing a monocrystal from a multiple-constituent solid solution and a device for carrying out the same |
| 06/09/1994 | WO1994012697A1 Process for growing a monocrystal and a device for carrying this out |
| 06/09/1994 | WO1994012681A1 Uniaxial thin film structures formed from oriented bilayers and multilayers |
| 06/08/1994 | EP0600658A2 Epitaxial magnesium oxide as a buffer layer on (111)tetrahedral semiconductors |
| 06/01/1994 | EP0599699A2 Method for preparing superconducting thin film formed of high temperature superconductor oxide |
| 05/31/1994 | US5316802 Pretreatment by irradiation |
| 05/31/1994 | US5316615 Surfactant-enhanced epitaxy |
| 05/31/1994 | US5316586 Silicon sample holder for molecular beam epitaxy on pre-fabricated integrated circuits |
| 05/24/1994 | US5314871 Substrate of single crystal of oxide, device using said substrate and method of producing said superconductive device |
| 05/24/1994 | US5314569 Controlled heating and vapor phase growth of monocrystalline filaments in apertures containing solutions of whisker material, then cooling to taper tip |
| 05/11/1994 | EP0438528B1 Epitaxial ba-y-cu-o supraconductor film |
| 04/26/1994 | US5306699 A chemical reactor having apertures for venting the volatile materials |
| 04/26/1994 | US5306386 Arsenic passivation for epitaxial deposition of ternary chalcogenide semiconductor films onto silicon substrates |
| 04/26/1994 | CA1328844C Method for preparing thin film of superconductor |
| 04/26/1994 | CA1328784C Article having surface layer of uniformly oriented, crystalline, organic microstructures |
| 04/21/1994 | DE4234671A1 Mfg. networks of nano:crystals and nano:crystal mixtures with loose structures - by means of a generating process e.g. Pfund's process, useful as elements for sensors, thermoelectric converters etc. |
| 04/19/1994 | US5304820 Substrate is doped with the atoms of group 2, 3, 5 and 6; single crystal growth by utilization of nucleation density difference |
| 04/19/1994 | US5304405 Etching with inert gas in vacuum vessel |
| 04/06/1994 | EP0590560A2 Thin-film superconductor and method of fabricating the same |
| 04/06/1994 | EP0590434A1 Process for producing a device having enhanced magnetoresistance and use of the device |
| 04/05/1994 | US5300485 Method of preparing oxide superconducting films by laser ablation |
| 04/05/1994 | US5300484 MBE or MO-MBE process for forming Bi-Sr-Ca-Cu-O superconducting thin films |
| 03/31/1994 | DE4324661A1 Prodn. of copper-cobalt structure of improved magneto-resistance - comprises forming intermediate prod. and then transforming into final prod. using heat |
| 03/29/1994 | US5298759 For placement between a source cell and growth chamber for growth of semiconductor layears |
| 03/22/1994 | US5296048 Crystalline substance containing Group IIIA element, Group VA element and transition or rare earth element |
| 03/15/1994 | US5294287 Class of magnetic materials for solid state devices |
| 03/03/1994 | WO1994004461A1 Methods and apparati for producing fullerenes |
| 03/03/1994 | DE4229031A1 Thermostable coating system for hexa:cyano-benzene on pure oxide free silicon - used as passivation, insulation, sub-coat, surface modifier, organic semiconductor or signal determn. in silicon substrate |
| 03/02/1994 | EP0584562A2 Method of depositing of an oxide superconducting thin film and manufacturing apparatus |
| 03/01/1994 | US5290394 Method of manufacturing a thin Hg1-x Cdx Te film |
| 02/22/1994 | US5288365 Controlling molecular beam sources |