Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192) |
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01/05/1993 | US5176786 Organic thin film controlled molecular epitaxy |
12/23/1992 | WO1992022426A1 A-axis high temperature superconducting films with preferential in-plane alignment |
12/23/1992 | CA2111210A1 A-axis high temperature superconducting films with preferential in-plane alignment |
12/22/1992 | US5173474 Silicon substrate having an epitaxial superconducting layer thereon and method of making same |
12/15/1992 | US5172385 Polarization-selective integrated optoelectronic devices incorporating crystalline organic thin films |
12/15/1992 | US5171399 Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy |
12/15/1992 | US5171370 Effusion cell of a molecular beam epitaxy system |
12/09/1992 | EP0517148A1 Method of making a thin film insulating layer with Bi-W-Oxygen |
11/17/1992 | US5164810 High temperature applications |
11/10/1992 | US5162294 Buffer layer for copper oxide based superconductor growth on sapphire |
10/28/1992 | EP0510555A1 Process for the production of a layer system and layer system |
10/28/1992 | EP0510128A1 Aerosol deposition and film formation of silicon |
10/27/1992 | US5158750 Boron nitride crucible |
10/24/1992 | CA2066847A1 Method of producing a layer system and a layer system as produced thereby |
10/20/1992 | US5156815 Elongated tubes axially oriented off axis to each other |
10/14/1992 | EP0508463A2 Method of forming a rotation-induced superlattice structure |
10/06/1992 | US5152866 Low pressure activated plasma reacts with flux directly on substrate for improved adhesion, efficiency, purity |
10/01/1992 | WO1992016966A1 A method for the preparation and doping of highly insulating monocrystalline gallium nitride thin films |
09/23/1992 | EP0505112A1 Bi-Sr-Ca-Cu-O system superconducting thin film and method of forming the same |
09/23/1992 | EP0504960A1 Phosphorus-alloyed cubic boron nitride films |
09/23/1992 | EP0504959A2 Carbon-alloyed cubic boron nitride films |
09/23/1992 | EP0504804A1 Bi system copper oxide superconducting thin film and method of forming the same |
09/17/1992 | WO1992015731A1 Method and apparatus for the purification and control of the composition of non-stoichiometric and stoichiometric crystalline compounds |
09/15/1992 | US5148025 In situ composition analysis during growth vapor deposition |
09/15/1992 | US5147461 Molecular beam epitaxial growth device and molecular beam control method therein for exactly controlling thickness and composition of epitaxial film |
09/09/1992 | EP0502682A2 Polarization-selective integrated optoelectronic devices incorporating crystalline organic thin films |
09/08/1992 | US5145713 Stoichiometric growth of compounds with volatile components |
08/26/1992 | EP0499982A1 Method of forming a single crystal material |
08/25/1992 | US5140939 Apparatus and crucible for vapor deposition |
08/20/1992 | DE4104592A1 Epitaxial deposition of high temp. ceramic superconductor on silicon@ - using an intermediate layer of which the first part is deposited by sputtering in an oxygen-free high pressure ambient |
08/19/1992 | EP0499294A1 Method of molecular epitaxial growth of single crystal layers of compound semiconductors |
08/18/1992 | US5139998 Controlled thallous oxide evaporation for thallium superconductor films and reactor design |
08/18/1992 | US5139592 Coating the surface of the substrate with uniaxially oriented molecules; smooth film surface for optics & electronics |
08/18/1992 | US5139591 Laser deposition of crystalline boron nitride films |
08/06/1992 | DE4103086A1 Deposition of high purity silicon by thermal decomposition - using several microwave heating sources for even heating of substrates and reduced contamination levels |
08/04/1992 | US5135887 Alloying boron, vaporizing, doping |
07/30/1992 | DE4134984C1 Prodn. of yttrium-contg. high temp. superconductors - by introducing yttrium by evapn. from yttrium oxide vessel in oxygen@-contg. atmos. and depositing on substrate |
07/21/1992 | US5132282 High temperature superconductor-strontium titanate sapphire structures |
07/15/1992 | EP0494689A2 Thin film deposition method and apparatus |
07/14/1992 | US5130294 High temperature superconductor-calcium titanate structures |
07/07/1992 | US5128538 Vapor effusion source for epitaxial deposition plants |
07/07/1992 | US5128316 Articles containing a cubic perovskite crystal structure |
06/23/1992 | US5124310 Laser ablation method for depositing fluorinated y-ba-cu-o superconducting film having basal plane alignment of the unit cells deposited on non-lattice-matched substrates |
06/17/1992 | EP0490727A1 Apparatus and crucible for vapor phase deposition |
06/16/1992 | US5122393 Reagent source for molecular beam epitaxy |
06/16/1992 | US5122250 Method of manufacturing iron garnet layers |
06/16/1992 | US5122222 Layer of material being grown in reactor subjected to energy beam, where oscillatory variations in the beam resulting from beam incidence on the growing material are detected |
06/11/1992 | WO1992009717A1 Defect-induced control of the structure of boron nitride |
06/09/1992 | US5120393 Method for molecular-beam epitaxial growth |
06/08/1992 | CA2056816A1 Apparatus and crucible for vapor deposition |
05/29/1992 | WO1992009100A1 Aerosol deposition and film formation of silicon |
05/26/1992 | US5116693 Unique system of FE/PD for magneto-optical recording and magnetic switching devices |
05/26/1992 | CA1301896C Photoelectric conversion device |
05/13/1992 | EP0485141A2 Composite superconductor |
05/12/1992 | US5112699 Metal-metal epitaxy on substrates and method of making |
05/05/1992 | US5110790 Superconducting thin films on potassium tantalate substrates |
05/05/1992 | US5110679 Crystalline sp-3 bonded, sputtering onto single crystal |
04/29/1992 | EP0482387A2 Process for producing a YBa2Cu3O7 superconducting layer on a sapphire substrate |
04/17/1992 | WO1992006798A1 In situ growth of superconducting films |
04/17/1992 | CA2092530A1 In situ growth of superconducting films |
03/31/1992 | US5100832 Homogeneous, smooth |
03/25/1992 | EP0476713A2 Method for forming crystal and crystal article obtained by said method |
03/25/1992 | CN1059763A Method and apparatus for treating surface |
03/24/1992 | US5098737 Amorphic diamond material produced by laser plasma deposition |
03/18/1992 | EP0475606A2 Doping of IIB-VIA semiconductors during molecular beam epitaxy |
03/17/1992 | US5096533 Molecular beam epitaxial growth device and molecular beam control method therein for exactly controlling thickness and composition of epitaxial film |
02/26/1992 | EP0472316A2 Multichannel plate assembly for gas source molecular beam epitaxy |
02/26/1992 | EP0472159A1 Method of fabricating a YBaCuO superconducting epitaxial-like thin film |
02/25/1992 | WO1992003588A1 Heater for an effusion cell |
02/25/1992 | US5091320 Optical method for controlling thickness of semiconductor |
02/25/1992 | CA2090730A1 Heater for an effusion cell |
02/21/1992 | CA2049523A1 Aligned superconducting film and epitaxial-like method of growing same |
02/04/1992 | CA1295405C Semiconductor light emitting device |
01/30/1992 | DE4106846C1 High vacuum tight drive for MBE appts. - comprising mounting head for substrate carrier pivotable between deposition position and charging position |
01/28/1992 | US5084265 Process for preparing a thin film of superconducting compound oxide |
01/22/1992 | EP0196897B1 Thermal etching of a compound semiconductor |
01/22/1992 | CN1058091A Boron nitride crucible and process for producing |
01/14/1992 | US5080870 Sublimating and cracking apparatus |
01/14/1992 | US5080753 On single crystal silicon |
01/09/1992 | WO1992000406A1 Uniform deposition of a thin film on a surface |
12/31/1991 | US5077270 Elements comprising a film of a perovskite compound whose crystallographic axes are oriented and a method of making such elements |
12/27/1991 | EP0462600A1 Process for preparing superconductive thin films |
12/26/1991 | WO1991020093A1 Ellipsometric control of material growth |
12/24/1991 | US5075744 Gallium arsenide, gallium arsenide phosphide, indium gallium a rsenide channel layer |
12/24/1991 | US5075257 Electrostatically charging silicon, polarity, grounding substr ate, coating charged silicon on substrate, heat treatment |
12/24/1991 | US5075055 Process for producing a boron nitride crucible |
12/21/1991 | CA2044941A1 Process for preparing superconductive thin films |
12/12/1991 | WO1991019028A1 Organo-element compounds for use in the electronics field |
12/12/1991 | WO1991019026A1 Growth of a,b-axis oriented perovskite thin films |
12/12/1991 | WO1991019025A1 Process for the measurement of the thickness and refractive index of a thin film on a substrate, and a device for carrying out the process |
12/11/1991 | EP0461050A1 A cubic perovskite crystal structure, a process of preparing the crystal structure, and articles constructed from the crystal structure |
12/11/1991 | EP0460943A1 Boron nitride crucible and its production |
12/11/1991 | EP0460938A2 Thermal decomposition cell |
12/11/1991 | EP0460598A1 Organic compounds for application in the field of electronics |
12/10/1991 | US5071696 Multilayer coating of aluminum oxide and titanium carbide |
12/05/1991 | CA2043710A1 Cubic perovskite crystal structure, a process of preparing the crystal structure, and articles constructed from the crystal structure |
12/04/1991 | EP0458991A1 Process for forming epitaxial film |
12/01/1991 | CA2034932A1 Growth of a,b-axis oriented perovskite thin films |
11/27/1991 | EP0458077A1 Process and apparatus for calibrating or recalibrating a flux pressure measuring device in an MBE apparatus |
11/14/1991 | WO1991017282A1 Diamond-like carbon material produced by laser plasma deposition |