| Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192) |
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| 02/22/1994 | US5288326 Apparatus for continuous growth of SiC single crystal from SiC synthesized in a vapor phase without using graphite crucible |
| 02/03/1994 | WO1994002665A1 Semimetal-semiconductor heterostructures and multilayers |
| 02/03/1994 | DE4225385A1 Continuous cpd. semiconductor layer prodn. process - comprises vapour depositing a 1st discrete layer of one metallic component of semiconductor, etc., esp. for mass prodn. of inexpensive solar cells |
| 02/03/1994 | CA2140450A1 Semimetal-semiconductor heterostructures and multilayers |
| 02/02/1994 | EP0581496A2 Molecular beam epitaxy (MBE) effusion source utilizing heaters to achieve temperature gradients |
| 02/02/1994 | EP0581254A1 Method of forming single-crystalline thin film |
| 02/01/1994 | US5283233 Method for producing a superconductor layer of YBa2 Cu3 O7 on a sapphire substrate |
| 01/26/1994 | EP0580019A1 Oriented polycrystalline thin films of transition metal chalcogenides |
| 01/19/1994 | EP0579279A1 Single-crystal wafer having a superconductive ceramic thin film formed thereon |
| 01/18/1994 | US5279869 Using laser |
| 01/05/1994 | EP0576566A1 A method for the preparation and doping of highly insulating monocrystalline gallium nitride thin films |
| 12/28/1993 | US5273932 Heating the substrate and using a laser of wavelength less than photon energy required for decomposing the gallium and indium organometallic compounds to effect a difference in growth rate |
| 12/28/1993 | US5273617 Method of forming silicon structures with selectable optical characteristics |
| 12/22/1993 | EP0574548A1 Method and apparatus for the purification and control of the composition of non-stoichiometric and stoichiometric crystalline compounds |
| 12/21/1993 | CA1325371C Reagent source for molecular beam epitaxy |
| 12/15/1993 | EP0573707A2 Apparatus for gas source molecular beam epitaxy |
| 11/30/1993 | US5266118 Vessel for growing thin films by isothermal vapor phase epitaxy |
| 11/23/1993 | US5264413 Bi-Sr-Ca-Cu-O compounds and methods |
| 11/23/1993 | US5264296 Silicon substrate with thin film of boron nitride |
| 11/16/1993 | US5262361 Vacuum evaporation onto a silicon, germanium or calcium fluoride surface |
| 11/03/1993 | EP0568446A1 Process for depositing a compound oxide superconducting thin film |
| 11/03/1993 | EP0568177A2 Epitaxial growth method and apparatus for doping nitrogen |
| 11/02/1993 | US5258326 Quantum device fabrication method |
| 10/28/1993 | DE4213432A1 Superconducting yttrium-barium-copper oxide complex prodn. with grain boundary - comprises growing yttrium-stabilised zirconia on sapphire substrate, applying magnesium oxide layer, structuring and growing strontium-titanium oxide layer |
| 10/28/1993 | CA2094791A1 Process for depositing a compound oxide superconducting thin film |
| 10/27/1993 | EP0567159A1 Method of manufacturing an oxide superconductor thin film |
| 10/20/1993 | EP0565766A2 Copper film coated substrate and method of forming copper film on substrate |
| 10/19/1993 | US5254363 Method for producing oxide films |
| 10/19/1993 | US5254293 Oriented monocrystallization grains |
| 10/19/1993 | US5254207 Method of epitaxially growing semiconductor crystal using light as a detector |
| 10/13/1993 | EP0565455A1 Process for preparing superconducting thin film formed of oxide superconductor material |
| 10/12/1993 | US5253266 MBE effusion source with asymmetrical heaters |
| 10/12/1993 | US5252390 Superconductive thin film |
| 10/12/1993 | US5252131 Apparatus for gas source molecular beam epitaxy |
| 10/05/1993 | US5250147 Epitaxial growth; depositing second component in from to produce precipitate or inclusions in first component; heat treatment to redist ribute and coalesce |
| 09/29/1993 | EP0562273A2 Method for improving the interface characteristics of CaF2 on silicon |
| 09/28/1993 | US5248631 Doping of iib-via semiconductors during molecular beam epitaxy using neutral free radicals |
| 09/28/1993 | US5248376 Process for thermal-etching treatment of compound semiconductor substrate used in molecular beam epitaxy and apparatus for performing same |
| 09/22/1993 | EP0363476B1 Method and apparatus for producing a layer of material from a laser ion source |
| 09/15/1993 | EP0559787A1 Defect-induced control of the structure of boron nitride |
| 09/08/1993 | EP0558925A1 Method for controlling roughness on surface of monocrystal |
| 09/08/1993 | EP0409897B1 Constant level supply of a mercury evaporation cell for epitaxy |
| 08/31/1993 | US5241191 Orthorhombic structure of barium, copper, rare earth oxides; superlattice or weak link for Josephson junction devices |
| 08/31/1993 | US5240902 Substrate of single crystal of oxide, superconductive device using said substrate and method of producing said superconductive device |
| 08/24/1993 | US5238526 Vapor depositing the crystals, thermal annealing for purification |
| 08/24/1993 | US5238525 Reflection high energy electron diffraction to determine growth properties of a layer of material as it is grown on a substrate |
| 08/10/1993 | CA1321121C Process for producing compound semiconductor and semiconductor device using compound semiconductor obtained by same |
| 08/04/1993 | EP0554047A1 SiC single crystal growth |
| 08/04/1993 | EP0553295A1 In situ growth of superconducting films |
| 07/20/1993 | US5229333 Method for improving the interface characteristics of CaF2 on silicon |
| 07/20/1993 | CA2034650C Ellipsometric control of material growth |
| 07/14/1993 | EP0550888A2 Method of forming a single crystal aluminum conductor on a single crystal substrate |
| 07/13/1993 | US5227363 Molecular beam epitaxy process of making superconducting oxide thin films using an oxygen radical beam |
| 07/13/1993 | US5227318 Method of making a cubic boron nitride bipolar transistor |
| 07/06/1993 | US5225031 Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process |
| 06/23/1993 | EP0547048A1 Heater for an effusion cell. |
| 06/22/1993 | US5222074 Thermal decomposition cell |
| 06/17/1993 | DE4141391A1 Mirror for reflecting in intensive IR radiation esp. laser - is produced by epitaxially depositing on oriented silicon@ substrate |
| 06/16/1993 | EP0546946A2 Film deposition apparatus |
| 06/10/1993 | WO1993011068A1 Conversion of fullerenes to diamond |
| 06/09/1993 | EP0545238A2 Method of epitaxially growing a semiconductor crystal |
| 06/02/1993 | EP0544437A2 Method for selectively growing aluminum-containing layers |
| 05/25/1993 | US5213906 Composite material comprising a layer of a iii-v compound and a layer of rare earth pnictide, production process and application |
| 05/18/1993 | US5211801 Method for manufacturing single-crystal silicon carbide |
| 05/12/1993 | EP0541011A1 Process for producing a SrTiO3-YBa2Cu3O7 layered structure and layered structure consisting of SrTiO3 and YBa2Cu3O7 |
| 05/11/1993 | US5209916 Conversion of fullerenes to diamond |
| 05/11/1993 | CA2010245C Coaxial cavity type, radiofrequency wave, plasma generating apparatus |
| 05/05/1993 | EP0540304A1 An apparatus for manufacturing a nitrogen-containing compound thin film |
| 04/29/1993 | WO1993008319A1 Reactor vessel for manufacture of superconducting films |
| 04/28/1993 | EP0538797A1 Carbon cluster film having electrical conductivity and method of preparing the same |
| 04/28/1993 | EP0538611A1 Multilayered composition with a single crystal beta-silicon carbide layer |
| 04/27/1993 | US5206214 Method of preparing thin film of superconductor |
| 04/27/1993 | US5205900 Making laser beam incident on surface of growing crystal, detecting diffracted laser beam from surface |
| 04/13/1993 | US5201985 Method and apparatus for the purification and control of the composition of non-stoichiometric and stoichiometric crystalline compounds |
| 04/07/1993 | EP0535293A1 A method of fabricating a compositional semiconductor device |
| 04/06/1993 | CA1315649C Epitaxial ba-y-cu-o superconductor film |
| 04/01/1993 | DE4132329A1 Determn. of pyrolysis for semiconducting metal-oxide films - measuring difference between temps. of gas circulation upstream and downstream from sintered capacitor bodies. |
| 03/31/1993 | EP0533678A1 Ellipsometric control of material growth |
| 03/30/1993 | US5198414 In-situ growth of flourounated superconducting, Y-Ba-Cu-O thin films on sapphire substrates with a buffer layer by laser ablation |
| 03/24/1993 | EP0533113A2 Method of manufacturing a thin Hg1-xCdxTe film |
| 03/17/1993 | EP0532104A1 II-VI Compound semiconductor epitaxial layers having low defects, method for producing and devices utilizing same |
| 03/17/1993 | EP0532000A1 High strength structural member and process for producing the same |
| 03/17/1993 | EP0531354A1 Process for the measurement of the thickness and refractive index of a thin film on a substrate, and a device for carrying out the process. |
| 03/04/1993 | WO1993004210A1 Method for forming oxide film |
| 03/03/1993 | EP0529687A2 Molecular beam epitaxy apparatus |
| 03/01/1993 | EP0610175A4 High temperature superconducting films on aluminum oxide substrates. |
| 02/24/1993 | EP0527915A1 Diamond-like carbon material produced by laser plasma deposition. |
| 02/23/1993 | US5188906 Substrates suitable for deposition of superconducting thin films |
| 02/23/1993 | US5188671 Multichannel plate assembly for gas source molecular beam epitaxy |
| 02/18/1993 | WO1993003209A1 Process and effusion cell for the formation of molecular beams |
| 02/16/1993 | US5187148 Having tube to enclose plasma nand supply oxygen while laser is applied to oxide target; for high speed, low temperature film formation |
| 02/16/1993 | US5186750 Vacuum chamber having substrate holder, laser source and controller, vibration-proof base, for organometallic molecular beam epitaxy |
| 02/10/1993 | EP0527035A1 Process for the preparation of fullerene |
| 02/04/1993 | DE4216806C1 Sample holder for substrates to be high temp. coated - comprises hollow body with heat shield and slot for insertion of substrate |
| 02/03/1993 | EP0526312A1 Process and effusion cell for forming molecular beams |
| 02/02/1993 | US5183779 Method for doping GaAs with high vapor pressure elements |
| 02/02/1993 | CA1313335C Process for preparing a thin film of superconducting compound oxide |
| 01/19/1993 | US5180463 Method for forming coated monocrystalline products |
| 01/13/1993 | EP0522866A1 Method and apparatus for producing oxide thin film |
| 01/05/1993 | US5177205 Electrooptics |