| Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192) |
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| 11/14/1991 | DE4114536A1 New fullerene and heterofullerene cpds. - contain spheres and used e.g. for storage medium or catalyst |
| 11/05/1991 | CA1291634C Method of manufacturing an optical stripline waveguide for non-reciprocal optical components |
| 10/31/1991 | WO1991016196A1 Novel hard carbon nitride and method for preparing same |
| 10/30/1991 | EP0454489A2 Controlled thallous oxide evaporation for thallium superconductor films and reactor design |
| 10/29/1991 | US5061687 Ultrathin layer of magnesium oxide on superconductor thin film |
| 10/29/1991 | US5061072 Differential ellipsometer |
| 10/23/1991 | EP0452924A1 A vapour effusion source for epitaxial deposition |
| 10/17/1991 | WO1991009995A3 Process for the deposition of thin films on solids |
| 10/16/1991 | EP0451782A2 Method of preparing oxide superconducting film |
| 10/16/1991 | EP0451641A1 Method of manufacturing oxide high-temperature superconductor thin film by means of molecular-beam epitaxy |
| 10/16/1991 | EP0451502A1 Metal-metal epitaxy on substrates |
| 10/16/1991 | CA2039913A1 Vapour effusion source for epitaxial deposition plants |
| 10/15/1991 | US5057183 Process for preparing epitaxial II-VI compound semiconductor |
| 10/15/1991 | CA1290862C High temperature superconducting thin film structure and method of making |
| 10/09/1991 | EP0450074A1 Method for preparing thin film of oxide superconductor and base used in the preparation |
| 09/19/1991 | WO1991014028A1 High temperature superconducting films on aluminum oxide substrates |
| 09/17/1991 | US5048457 Plasma/radiation assisted molecular beam epitaxy method and apparatus |
| 09/11/1991 | EP0445307A1 Single crystal oxide substrate, superconductor device produced therefrom, and producing thereof |
| 09/10/1991 | US5047385 Method of forming superconducting YBa2 Cu3 O7-x thin films with controlled crystal orientation |
| 09/10/1991 | US5047365 Method for manufacturing a heterostructure transistor having a germanium layer on gallium arsenide using molecular beam epitaxial growth |
| 09/04/1991 | EP0444698A2 Method of and apparatus for preparing oxide superconducting film |
| 08/28/1991 | EP0443920A1 Process for the controlled growth of needle-like crystals and their application for making pointed microcathodes |
| 08/27/1991 | US5042887 High energy ultraviolet laser reflector grown on a single crystalline substrate |
| 08/20/1991 | US5041719 Two-zone electrical furnace for molecular beam epitaxial apparatus |
| 08/20/1991 | US5041302 Method of forming thin film by physical vapor deposition |
| 08/20/1991 | US5041200 Heat treating a thin film formed by the simultaneous deposition of a rare earth component and a pnictide on a substrate |
| 08/13/1991 | US5039626 Method for heteroepitaxial growth of a two-dimensional material on a three-dimensional material |
| 08/13/1991 | US5039561 Vapor deposition of organic compound, then vacuum annealing yields layer of uniform crystalline particles |
| 07/31/1991 | EP0438528A1 Epitaxial ba-y-cu-o supraconductor film. |
| 07/23/1991 | US5034604 Refractory effusion cell to generate a reproducible, uniform and ultra-pure molecular beam of elemental molecules, utilizing reduced thermal gradient filament construction |
| 07/16/1991 | US5032472 Vapor deposited thin film |
| 07/11/1991 | WO1991009995A2 Process for the deposition of thin films on solids |
| 07/11/1991 | WO1991009994A1 Method of forming material layer |
| 07/03/1991 | CN2080071U Growing device for mercury iodium single crystal |
| 07/02/1991 | US5028584 Process and apparatus for producing epitaxial and/or highly textured grown film, free of foreign phases, of a high-Tc -oxide superconductor on a substrate |
| 07/02/1991 | US5028561 Method of growing p-type group II-VI material |
| 06/27/1991 | WO1991009161A1 Process for forming epitaxial film |
| 06/26/1991 | EP0434436A2 Deposition apparatus and method for manufacturing a mono-crystalline oxide superconductor thin film |
| 06/19/1991 | EP0432820A2 Laser deposition of crystalline boron nitride films |
| 06/12/1991 | EP0431200A1 Quadratic nonlinear optical element |
| 06/05/1991 | EP0298080B1 Method and apparatus for monitoring surface layer growth |
| 05/22/1991 | EP0427910A1 A boron source for silicon molecular beam epitaxy |
| 05/21/1991 | US5016563 Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film |
| 04/24/1991 | EP0423956A1 Method for producing charge transfer complex crystals from the vapor phase |
| 04/23/1991 | US5010033 Process for producing compound semiconductor using an amorphous nucleation site |
| 04/23/1991 | US5009923 Method of forming diamond film |
| 04/18/1991 | WO1991005087A1 Single crystal oxide substrate, superconductor device produced therefrom, and producing thereof |
| 03/13/1991 | EP0416764A2 Method of making an article comprising a III/V semiconductor device |
| 03/13/1991 | EP0416545A2 Laminated film and method for producing the same |
| 03/12/1991 | US4999316 Method for forming tapered laser or waveguide optoelectronic structures |
| 02/26/1991 | US4996187 Epitaxial Ba-Y-Cu-O superconductor film |
| 02/26/1991 | US4996185 Ceramic superconducting thin film |
| 02/20/1991 | EP0413159A2 Process for growing compound semiconductor layers and detector using such layers |
| 02/19/1991 | US4993357 Apparatus for atomic layer epitaxial growth |
| 02/13/1991 | EP0412199A1 Single-crystal wafer having a superconductive ceramic thin film formed thereon |
| 01/30/1991 | EP0410627A1 Oxide film with preferred crystal orientation, method of manufacturing the same, and magneto-optical recording medium |
| 01/30/1991 | EP0409897A1 Constant level supply of a mercury evaporation cell for epitaxy. |
| 01/29/1991 | US4987857 Vacuum deposition apparatus with dust collector electrode |
| 01/22/1991 | US4987007 Diamond-like carbon on silicon from graphite target |
| 01/17/1991 | DE4010132A1 Surface topology simulation device for semiconductor substrate - uses network topology with approximation of movement of treated surface by movement of surfaces with same conc. |
| 01/16/1991 | EP0407941A1 Thin film of Ln2-xcexcuo4-y single crystal and process for producing the same |
| 01/15/1991 | CA1278984C Crucible for epitaxy from the liquid phase of semiconductor layers having a "controlled" composition |
| 01/10/1991 | WO1991000544A1 Quadratic nonlinear optical element |
| 01/08/1991 | US4983575 Superconducting thin films made of stacked composite oxide layers |
| 01/02/1991 | EP0406126A1 Substrate having a superconductor layer |
| 01/01/1991 | US4981714 Method of producing ferroelectric LiNb1-31 x Tax O3 0<x<1) thin film by activated evaporation |
| 01/01/1991 | US4981568 Apparatus and method for producing high purity diamond films at low temperatures |
| 12/27/1990 | EP0403887A1 Process for producing single crystal silicon carbide |
| 12/19/1990 | EP0403461A1 Coated cutting insert |
| 12/19/1990 | EP0403110A1 Method of growing p-type group II-VI material |
| 12/11/1990 | US4977103 Wetting interior surface of crucible with less electronegative metal |
| 12/05/1990 | EP0400263A1 New class of magnetic materials for solid state devices |
| 11/27/1990 | US4974231 Visible light semiconductor laser |
| 11/20/1990 | US4971676 Support device for a thin substrate of a semiconductor material |
| 11/15/1990 | DE3915116C1 Electrically non-conducting crucible - includes pyrolytic carbon layer and aluminium nitride or aluminium oxide-contg. ceramic |
| 11/15/1990 | DE3915053A1 Single crystal silicon carbide growth - with modification type controlled by seed crystal crystallographic orientation |
| 11/13/1990 | CA1276318C Large cross-sectional area molecular beam source for semiconductor processing |
| 11/06/1990 | US4968664 Single-crystal wafer having a superconductive ceramic thin film formed thereon |
| 10/31/1990 | EP0394462A1 Method of forming a semiconductor thin film and apparatus therefor |
| 10/30/1990 | US4966763 Heating and condensing reaction product from particle bed of iodine compound; high purity |
| 10/24/1990 | EP0393600A2 Apparatus containing an effusion cell crucible for molecular beam epitaxy equipment |
| 10/17/1990 | EP0392925A1 Composite material containing III-V compound layer and a layer of rare earth pnictide, method for its production and application thereof |
| 10/13/1990 | CA2014430A1 Composite including a layer of a iii-v compound and a layer of rare earths, process for its production and its application |
| 10/10/1990 | EP0391156A2 Improved coaxial cavity type, radiofrequency wave, plasma generating apparatus |
| 10/09/1990 | US4962086 Oriented high transition temperature layers on substrates |
| 10/03/1990 | EP0390139A2 Ferroelectric thin film and method for producing the same |
| 10/03/1990 | CN1009885B Method of growth of thin film layer for use in composite semiconductor |
| 10/02/1990 | US4960720 Method of growing compound semiconductor thin film using multichamber smoothing process |
| 09/20/1990 | WO1990008210A3 Plasma/radiation assisted molecular beam epitaxy method and apparatus |
| 08/21/1990 | US4950644 Method for the epitaxial preparation of a layer of a metal-oxide superconducting material with a high transition temperature |
| 08/21/1990 | US4950358 Vapor phase epitaxy of semiconductor material in a quasi-open system |
| 08/14/1990 | US4948456 Without requirement of subsequent thinning |
| 08/07/1990 | US4946543 Vapor deposition; inter diffusion of substrates and source material |
| 08/07/1990 | US4946241 Radio frequency cathode sputtering in inert gas |
| 08/07/1990 | US4945774 Communicating services |
| 07/31/1990 | US4945254 Method and apparatus for monitoring surface layer growth |
| 07/31/1990 | US4944246 Molecular beam epitaxy apparatus |
| 07/26/1990 | WO1990008210A2 Plasma/radiation assisted molecular beam epitaxy method and apparatus |
| 07/12/1990 | WO1990007591A1 Method for preparing thin film of oxide superconductor and base used in the preparation |
| 07/10/1990 | US4940854 Multilayer crystalline uniaxially oriented organic compounds coated on a substrate |