Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials
Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192)
07/1986
07/02/1986CA1207090A Substrate heating apparatus for molecular beam epitaxy
06/1986
06/24/1986US4596721 Vacuum evaporating films of alkali metal polyphosphide
06/11/1986EP0183962A1 Process for doping a semiconductor material
06/05/1986WO1986003231A1 Chemical beam deposition method
06/03/1986US4592308 Solderless MBE system
04/1986
04/15/1986US4582559 Method of making thin free standing single crystal films
04/08/1986US4580522 Rotary substrate holder of molecular beam epitaxy apparatus
03/1986
03/26/1986EP0175436A2 Semiconductor processing
03/11/1986US4575462 Determination of atomic ratio of constituents
03/05/1986EP0173448A2 Method of forming a III-V semiconductor layer
02/1986
02/12/1986EP0170800A1 Heater assembly for molecular beam epitaxy furnace
02/11/1986US4569829 MBE Source bakeout system
02/11/1986US4569307 Silicon melting and evaporation apparatus for high purity applications
01/1986
01/21/1986US4565741 Boron nitride film and process for preparing same
01/15/1986EP0168071A1 Semiconductor device manufacture using molecular beam epitaxy with source temperature control
01/14/1986US4564416 Method for producing a semiconductor device
01/08/1986EP0090817B1 Thin films of compounds and alloy compounds of group iii and group v elements
12/1985
12/24/1985US4560576 Vacuum, cleaning
12/11/1985EP0164132A2 Vapour deposition apparatus
12/03/1985US4556436 Method of preparing single crystalline cubic silicon carbide layers
11/1985
11/26/1985US4555301 Formation of heterostructures by pulsed melting of precursor material
11/21/1985EP0161747A1 Semiconductor production method
11/19/1985US4554150 Detector grade mercuric iodide
11/12/1985US4553022 Effusion cell assembly
11/06/1985EP0160479A2 Method and apparatus for forming a thin film
10/1985
10/29/1985US4550411 Sources used in molecular beam epitaxy
10/29/1985US4550047 Silicon source component for use in molecular beam epitaxial growth apparatus
10/29/1985US4550031 Control of Si doping in GaAs, (Al,Ga)As and other compound semiconductors during MBE growth
10/22/1985US4548670 Electric arcs
09/1985
09/24/1985US4542712 Apparatus for molecular beam epitaxy
08/1985
08/13/1985US4534840 Removing impurities by reacting with ionized hydrogen
07/1985
07/16/1985US4529617 Continuously depositing amorphous element on support; radiation with electromagnetic waves
07/16/1985US4529455 Method for epitaxially growing Gex Si1-x layers on Si utilizing molecular beam epitaxy
07/03/1985EP0146985A2 Process for making thin ferrimagnetic monocrystalline garnet films by cathodic sputtering
06/1985
06/19/1985EP0145285A2 Solderless mbe system
06/12/1985EP0143792A1 Method for forming a stream of atoms and utilization thereof in an atomic jet epitaxy process and device (e.j.a.).
05/1985
05/28/1985US4520039 Designing pattern in matrix of atoms of different physical propert
05/21/1985US4518846 Heater assembly for molecular beam epitaxy furnace
05/14/1985US4517047 Gallium arsenide molecular beam epitaxial semiconductors
04/1985
04/30/1985US4514636 Ion treatment apparatus
04/30/1985US4514250 Method of substrate heating for deposition processes
04/02/1985US4509066 Sputtered semiconducting films of catenated phosphorus material and devices formed therefrom
04/02/1985US4508931 Catenated phosphorus materials, their preparation and use, and semiconductor and other devices employing them
02/1985
02/13/1985EP0132538A1 An apparatus for molecular beam epitaxy
02/12/1985US4498416 Installation for treatment of materials for the production of semi-conductors
01/1985
01/30/1985EP0132323A2 Sputtered semiconducting films of catenated phosphorus material
01/15/1985US4493142 III-V Based semiconductor devices and a process for fabrication
01/09/1985EP0130803A2 Graphite intercalated alkali metal vapour sources
01/08/1985US4492852 In an evacuable chamber
12/1984
12/12/1984EP0127838A2 Silicon sources suitable for use in molecular beam epitaxy deposition
12/05/1984EP0127499A1 Process for the amorphous growth of a material with irradiation crystallisation
11/1984
11/13/1984US4482833 Method for obtaining oriented gold and piezoelectric films
10/1984
10/24/1984EP0122446A1 Method and apparatus for coating a substrate
10/17/1984EP0122088A1 Improvements in or relating to sources used in molecular beam epitaxy
10/16/1984US4477311 Hydrogen-plasma etching, molecular beam epitaxy and forming a protective layer all under unbroken vacuum
10/16/1984US4477308 Controlling molecular orientation and crystallization by heating a disorded low-temperature metal to react with the substrate
09/1984
09/19/1984EP0119130A1 Transparent heating apparatus having at least two zones at different temperatures
09/13/1984WO1984003524A1 Method for forming a stream of atoms and utilization thereof in an atomic jet epitaxy process and device (e.j.a.)
08/1984
08/28/1984US4468278 Process for mono-crystal growth in a closed tubular chamber
08/07/1984US4464342 Ovens; cryogenics; chambers; outgassing
07/1984
07/25/1984EP0113983A1 Fabricating a semiconductor device by means of molecular beam epitaxy
07/25/1984EP0113954A1 A substrate for manufacturing single crystal thin films
06/1984
06/13/1984EP0110468A1 Method of growing an alloy film by a layer-by-layer process on a substrate, and a method of making a semiconductor device
05/1984
05/15/1984US4448854 Coherent multilayer crystals and method of making
05/15/1984CA1167358A1 Molecular beam epitaxy electrolytic dopant source
05/08/1984US4447276 Using controlled energy levels where dopant material is sulfur, selenium, or tellurium
05/08/1984CA1166937A1 Method and apparatus for performing growth of compound thin films
05/02/1984EP0107356A2 Compositionally varied materials and method and system for synthesizing the materials
05/01/1984US4445965 Method for making thin film cadmium telluride and related semiconductors for solar cells
03/1984
03/27/1984US4439266 Vapor transport process for growing selected compound semiconductors of high purity
03/06/1984US4435224 Process for preparing homogeneous layers of composition Hg1-x Cdx
03/06/1984US4434742 Installation for depositing thin layers in the reactive vapor phase
02/1984
02/28/1984US4434025 Controlling crystallinity and thickness of monocrystalline layer by use of an elliptically polarized beam of light
02/07/1984US4430183 Alternation, lamination, metals, sputtering, beams, crystallization
01/1984
01/31/1984US4428808 Sputtering layer of glass before deposition of gold
01/17/1984US4426237 Volatile metal oxide suppression in molecular beam epitaxy systems
12/1983
12/20/1983CA1159161A1 Method and apparatus for conducting heat to or from an article being treated under vacuum
12/06/1983US4419178 Endless belts, monocrystals
11/1983
11/29/1983CA1157962A1 Method of growing a doped iii-v alloy layer by molecular beam epitaxy
11/01/1983US4413022 Vapor reactions
11/01/1983US4412771 Sample transport system
10/1983
10/25/1983US4411728 Method for manufacture of interdigital periodic structure device
10/12/1983EP0090817A1 Thin films of compounds and alloy compounds of group iii and group v elements.
08/1983
08/23/1983CA1152622A1 Growth technique for preparing graded gap semiconductors and devices
08/23/1983CA1152620A1 Equilibrium growth technique for preparing pbs.sub.xse in1-x xx epilayers
07/1983
07/26/1983CA1150602A1 Method of growing n-type gaas layers by molecular beam epitaxy
07/19/1983US4394210 Process for forming a lead film
07/12/1983US4392453 Molecular beam converters for vacuum coating systems
05/1983
05/17/1983US4383872 Method of growing a doped III-V alloy layer by molecular beam epitaxy utilizing a supplemental molecular beam of lead
05/11/1983EP0018397B1 Layer of crystalline silicon having (iii) orientation on (iii) surface of lithium aluminium
04/1983
04/28/1983WO1983001466A1 Thin films of compounds and alloy compounds of group iii and group v elements
04/27/1983EP0077405A1 Method and device for manufacturing product by utilizing holography technique
04/12/1983CA1144453A1 Prevention of decomposition of phosphorous containing substrates
02/1983
02/01/1983US4371232 Leac-cadmium-chalcogenide alloys
11/1982
11/16/1982CA1135601A1 Method for forming a crystalline film for a paramagnetic sodium thallium type intermetallic compound
11/11/1982WO1982003798A1 Method and device for manufacturing product by utilizing holography technique
10/1982
10/19/1982CA1133807A1 Layer of crystalline silicon having (iii) orientation on (iii) surface of lithium aluminum
09/1982
09/28/1982US4351695 Method of producing low-resistant, monocrystalline metallic layers by implanting ions into a polycrystalline metal layer and heating to produce a monocrystalline layer
09/15/1982EP0060151A1 Material treatment apparatus for producing semiconductors
07/1982
07/13/1982US4339764 PbSx Se1-x semiconductor
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