| Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192) |
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| 10/05/1988 | EP0285358A2 Process for producing compound semiconductor and semiconductor device using compound semiconductor obtained by same |
| 10/05/1988 | EP0284657A2 Process and apparatus for producing thin multi-component films |
| 09/27/1988 | US4774416 Large cross-sectional area molecular beam source for semiconductor processing |
| 09/27/1988 | US4773852 Multi-walled |
| 09/20/1988 | US4772370 Vacuum sputtering, alloy depositing, melt spinning to form crystalline films |
| 09/13/1988 | US4770895 Control of uniformity of growing alloy film |
| 08/31/1988 | EP0280315A2 Method of forming a diamond film |
| 08/31/1988 | EP0280198A1 Method of forming diamond film |
| 08/16/1988 | CA1240482A1 Silicon melting and evaporation method and apparatus for high purity applications |
| 08/03/1988 | EP0276914A2 Anti-flaking measures in molecular-beam-epitaxy apparatus, and method of manufacture |
| 07/19/1988 | US4758399 Substrate for manufacturing single crystal thin films |
| 07/19/1988 | US4758267 Ultrafine particle and fiber production in microgravity |
| 07/06/1988 | EP0273470A2 Method for decontamination of a chamber used in vacuum processes for deposition, etching and/or growth of high purity films, particularly applicable to semiconductor technology |
| 06/16/1988 | WO1988004332A1 Multilayered structures |
| 06/15/1988 | EP0271351A2 Vacuum evaporating apparatus |
| 06/07/1988 | US4748932 Crucible for epitaxy from the liquid phase of semiconductor layers having a "controlled" composition |
| 05/31/1988 | US4748315 Molecular beam source |
| 04/12/1988 | US4737232 Laser passes through transparent substrate to polymerize monomer onto surface of substrate |
| 04/05/1988 | US4735396 Replica pattern of monocrystalline cleavage plane; solar cells |
| 03/30/1988 | EP0261857A2 Large cross-sectional area molecular beam source for semiconductor processing |
| 03/22/1988 | US4732108 Apparatus for monitoring epitaxial growth |
| 03/09/1988 | EP0258752A2 Article having surface layer of uniformly oriented, crystalline, organic microstructures |
| 03/01/1988 | US4728389 Particulate-free epitaxial process |
| 02/18/1988 | DE3627598A1 Radiant heating system for heating a substrate |
| 01/26/1988 | CA1231916A1 Sputtered semiconducting films of catenated phosphorus material and devices formed therefrom |
| 01/20/1988 | EP0253512A2 Preparation of lead titanate for use in piezoelectric composite transducers |
| 01/13/1988 | EP0252757A2 Photoelectric conversion device |
| 01/13/1988 | EP0252536A1 Fabrication method of optical strip transmission line for non-reciprocal optical components |
| 01/13/1988 | EP0252347A2 Process for the deposition of gallium arsenide layers |
| 01/07/1988 | EP0251522A2 Process for production of beta-type silicon nitride |
| 01/07/1988 | EP0250603A1 Process for forming thin film of compound semiconductor |
| 01/05/1988 | US4717630 Substrate for manufacturing single crystal thin films |
| 01/05/1988 | US4717443 Mass transport of indium phosphide |
| 12/16/1987 | EP0249516A1 Cell for epitaxial growth by molecular jets, and associated process |
| 11/19/1987 | EP0245688A1 Method of forming diamond film |
| 11/04/1987 | EP0244081A1 Method for forming crystal and crystal article obtained by said method |
| 10/15/1987 | DE3612340A1 Process for diamond growth |
| 10/13/1987 | US4699085 For growth on a semiconductor wafer |
| 10/13/1987 | US4699084 Apparatus for producing high quality epitaxially grown semiconductors |
| 10/13/1987 | US4699083 Molecular beam generator using thermal decomposition for manufacturing semiconductors by epitaxy |
| 09/30/1987 | EP0239140A2 Process for producing structured epitaxial films on a substrate |
| 09/24/1987 | WO1987005700A1 Method and apparatus for monitoring surface layer growth |
| 09/22/1987 | US4695347 Process for the formation of single crystals from the gas phase |
| 09/16/1987 | EP0143792B1 Method for forming a stream of atoms and utilization thereof in an atomic jet epitaxy process and device (e.j.a.) |
| 09/15/1987 | US4693207 Apparatus for the growth of semiconductor crystals |
| 09/08/1987 | US4692203 Process for making beta-zinc diphosphide monocrystals (whiskers) |
| 09/01/1987 | US4690841 Pyrolytic boron nitride article |
| 09/01/1987 | US4690098 Vacuum vapor-deposition system |
| 08/19/1987 | EP0232436A1 Generator of molecular beams by thermal decomposition for the production of semiconductors by epitaxial deposition |
| 08/12/1987 | EP0231658A1 Molecular beam epitaxial apparatus |
| 07/22/1987 | EP0229263A2 Method of growing quaternary or pentanary compound semiconductor by MBE lattice-matched to substrate |
| 07/01/1987 | EP0227228A2 Substrate holder for wafers during MBE growth |
| 06/25/1987 | DE3545240A1 Vacuum chamber |
| 06/18/1987 | WO1987003740A1 Process for forming thin film of compound semiconductor |
| 06/04/1987 | DE3542613A1 Replenishing appliance for an evaporation source in a vacuum chamber |
| 06/03/1987 | CN86106177A Method of growth of thin film layer for use in a composite semiconductor |
| 06/02/1987 | US4670241 P4 gas generator using the alkali metal polyphosphide MP15 |
| 05/26/1987 | US4668480 Crucibles, vacuum housings |
| 05/20/1987 | EP0222438A1 Vessel for the liquid-phase epitaxy of semiconductor films with a controlled composition |
| 05/12/1987 | US4664960 Superlattices; spatial and orientational placement of atoms |
| 05/12/1987 | US4664940 Process for the formation of a flux of atoms and its use in an atomic beam epitaxy process |
| 05/12/1987 | US4664063 Molecular beam epitaxial growth apparatus |
| 05/12/1987 | US4664062 Apparatus for manufacturing semiconductors |
| 05/05/1987 | US4662981 Method and apparatus for forming crystalline films of compounds |
| 04/22/1987 | EP0218842A2 Method for producing single beta-zinc diphosphide crystals |
| 04/22/1987 | EP0113983B1 Fabricating a semiconductor device by means of molecular beam epitaxy |
| 03/25/1987 | EP0215436A2 Method of growth of thin film layer for use in a composite semiconductor |
| 03/18/1987 | EP0214207A1 Method and device for depositing a doped material by epitaxial growth. |
| 03/10/1987 | US4648917 Mercury cadmium, tellurium intermetallic semiconductor |
| 03/05/1987 | DE3530999A1 Process for fabricating semiconductor arrangements |
| 03/03/1987 | US4646680 Crucible for use in molecular beam epitaxial processing |
| 02/25/1987 | EP0211292A2 Molecular beam epitaxy apparatus |
| 02/12/1987 | WO1987000966A1 Control of uniformity of growing alloy film |
| 02/03/1987 | US4640720 Method of manufacturing a semiconductor device |
| 01/27/1987 | US4639377 Thin film formation technique and equipment |
| 01/21/1987 | EP0208851A1 Fabricating a semiconductor device by means of molecular beam epitaxy |
| 01/13/1987 | US4636268 Chemical beam deposition method utilizing alkyl compounds in a carrier gas |
| 01/06/1987 | CA1216133A1 Compositionally varied materials and method for synthesizing the materials |
| 12/30/1986 | EP0206603A1 Method for growing crystals |
| 12/30/1986 | EP0206120A1 Pyrolytic boron nitride crucible and method for producing the same |
| 12/30/1986 | EP0205963A1 Method and apparatus for molecular beam epitaxial growth |
| 12/23/1986 | CA1215521A1 Catenated phosphorus materials, their preparation and use, and semiconductor and other devices employing them |
| 12/16/1986 | US4629514 Method of producing II-V compound semiconductors |
| 11/11/1986 | US4622236 Boron nitride film and process for preparing same |
| 11/11/1986 | US4622093 Group 3 and group 5 ions |
| 11/11/1986 | US4622083 Group 3 metal and group 3 metal and group 5 metal |
| 11/04/1986 | US4620968 Monoclinic phosphorus formed from vapor in the presence of an alkali metal |
| 11/04/1986 | US4620963 Vapor transport reactor with composite metal-glass tube |
| 10/15/1986 | EP0197452A2 Method for producing high quality epitaxial layers by molecular beam epitaxy |
| 10/08/1986 | EP0196897A1 Thermal etching of a compound semiconductor |
| 09/12/1986 | WO1986005319A1 Method and device for depositing a doped material by epitaxial growth |
| 09/03/1986 | EP0193192A2 Pyrolytic boron nitride article and method for producing the same |
| 08/26/1986 | US4608272 Laser irradiation while depositing thorium tetrafluoride |
| 08/20/1986 | EP0191661A1 Coating and crystallisation process of an organic-material film by the use of a beam of energy |
| 08/19/1986 | US4606296 Evaporation cell for a liquid compound suitable for epitaxy by molecular jets |
| 08/12/1986 | US4605469 MBE system with in-situ mounting |
| 08/12/1986 | CA1209452A1 Heterostructure comprising a heteroepitaxial multiconstituent material |
| 07/29/1986 | CA1208806A1 Method of growing an alloy film by a layer-by-layer process on a substrate, and a method of making a semiconductor device |
| 07/08/1986 | US4599069 Substrate holder for molecular beam epitaxy apparatus |
| 07/08/1986 | CA1207470A1 Apparatus for molecular beam epitaxy |