| Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192) |
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| 07/10/1990 | US4940693 High temperature superconducting thin film structure and method of making |
| 07/04/1990 | EP0376798A1 Oriented polydiacetylene layer |
| 06/21/1990 | DE3842420A1 Hard cemented composite and process for the production thereof |
| 06/19/1990 | US4935092 Molecular beam epitaxy at two seperate temperature stages |
| 06/19/1990 | US4934313 Control of uniformity of growing alloy film |
| 06/19/1990 | CA1270424A1 Chemical beam deposition method |
| 06/06/1990 | EP0371481A2 Laminated film and method for producing the same |
| 06/05/1990 | US4931132 Optical control of deposition of crystal monolayers |
| 05/23/1990 | EP0214207B1 Method and device for depositing a doped material by epitaxial growth |
| 05/03/1990 | WO1990004857A1 EPITAXIAL Ba-Y-Cu-O SUPERCONDUCTOR FILM |
| 04/18/1990 | EP0364068A2 Method of depositing an oxide superconductor on a substrate |
| 04/18/1990 | EP0363554A2 Process and apparatus for producing epitaxially and/or highly texturally grown, high TC-oxide superconductor films, lacking in foreign phases, on substrates |
| 04/18/1990 | EP0363476A1 Method and apparatus for producing a layer of material from a laser ion source. |
| 04/10/1990 | US4916114 Method for producing a layer-like composition of oxide-ceramic superconducting material |
| 04/10/1990 | US4916089 Process for the epitaxial production of semiconductor stock material |
| 04/10/1990 | US4915977 Method of forming a diamond film |
| 04/04/1990 | EP0360994A1 Apparatus and method for producing diamond films at low temperatures |
| 04/03/1990 | US4913652 Pyrolytic boron nitride crucible and method for producing the same |
| 03/07/1990 | EP0208851B1 Fabricating a semiconductor device by means of molecular beam epitaxy |
| 03/06/1990 | US4906900 Coaxial cavity type, radiofrequency wave, plasma generating apparatus |
| 02/22/1990 | WO1990001794A1 Method of forming a semiconductor thin film and apparatus therefor |
| 01/31/1990 | EP0352931A1 Organic thin film controlled molecular epitaxy |
| 01/31/1990 | EP0352860A2 Process for producing iron garnet coatings |
| 01/31/1990 | EP0352857A2 Process for producing iron garnet coatings |
| 01/31/1990 | EP0352472A2 Heteroepitaxy of lattice-mismatched semiconductor materials |
| 01/17/1990 | EP0351176A2 Low gravity enhanced growth of phthalocyanine polymorphs |
| 01/09/1990 | US4892615 Evacuation and purging with a gas |
| 01/03/1990 | EP0349364A1 Device for holding a thin substrate, particularly made of a semiconducting material |
| 12/27/1989 | EP0348085A1 Vacuum deposition apparatus |
| 12/26/1989 | US4889319 Bakeable vacuum systems |
| 12/19/1989 | US4888202 Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film |
| 12/13/1989 | EP0345441A2 High-Tc superconductor-gallate crystal structures |
| 12/06/1989 | EP0344352A1 Method for making artificial layered high-Tc superconductors |
| 11/02/1989 | WO1989010427A1 Method and apparatus for producing a layer of material from a laser ion source |
| 10/31/1989 | US4877573 Molecular beam epitaxy |
| 10/24/1989 | US4876218 Method of growing GaAs films on Si or GaAs substrates using ale |
| 10/24/1989 | US4876144 Single crystal thin film |
| 10/19/1989 | WO1989009847A1 Constant level supply of a mercury evaporation cell for epitaxy |
| 10/05/1989 | WO1989009490A1 Tapered laser or waveguide optoelectronic structures and method |
| 10/04/1989 | EP0335267A2 Molecular beam epitaxy apparatus |
| 09/27/1989 | EP0334682A2 Heterostructure transistor having a germanium layer on gallium arsenide and a method for manufacturing the same using molecular beam expitaxial growth |
| 09/26/1989 | US4869776 Method for the growth of a compound semiconductor crystal |
| 09/20/1989 | EP0333573A1 Process for obtaining an organic polycrystalline material, notably with electro-optical properties |
| 09/12/1989 | US4866005 Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide |
| 08/16/1989 | EP0328202A2 Method of forming a quantum dot structure |
| 08/15/1989 | US4857415 Gallium arsenide layer, metal layer |
| 08/15/1989 | US4856457 Crucible with two separate zones; film formation |
| 08/10/1989 | DE3834963A1 Method for the epitaxial production of a layer of a metal oxide superconductor material having high critical temperature |
| 08/09/1989 | EP0327493A2 Epitaxial arrangement of high TC superconductors on silicon |
| 08/08/1989 | US4855255 Tapered laser or waveguide optoelectronic method |
| 08/08/1989 | US4855013 Method for controlling the thickness of a thin crystal film |
| 08/08/1989 | US4854264 Vacuum evaporating apparatus |
| 08/03/1989 | DE3802236A1 Mixture of material for producing a metal chalcogenide and use of such a mixture |
| 08/01/1989 | US4853076 Heat treatment while crystallizing to produce tensile stress which produces electron mobility |
| 07/26/1989 | EP0325275A2 A visible light semiconductor laser with (AlxGa1-x)0.5In0.5P crystal layers and a process for growing an (AlxGa1-x)0.5In0.5P crystal |
| 07/26/1989 | EP0202329B1 Chemical beam deposition method |
| 07/18/1989 | US4849146 Vapor phase reaction boron halide and ammonia; uniform structure |
| 07/18/1989 | US4849080 Method of manufacturing an optical stripline waveguide for non-reciprocal optical components |
| 07/13/1989 | WO1989006354A1 Differential ellipsometer |
| 07/11/1989 | US4847216 Process for the deposition by epitaxy of a doped material |
| 07/04/1989 | US4844785 Bombarding carbon coating with accelerated particles of inert gas |
| 06/28/1989 | EP0321909A2 Process and apparatus for atomic-layer epitaxy |
| 06/28/1989 | EP0321557A1 Process for the deposition of diamond films |
| 06/07/1989 | CN1004455B Method of growth of thin film layer for use in a composite semiconductor |
| 06/06/1989 | CA1255192A1 Method of manufacturing a semiconductor device |
| 05/23/1989 | US4833101 Molecular beam epitaxy |
| 05/16/1989 | US4831628 Transistors; waveguides |
| 05/10/1989 | CN1032884A Method of growth of thin film layer for use in composite semiconductor |
| 05/09/1989 | US4829022 Method for forming thin films of compound semiconductors by flow rate modulation epitaxy |
| 05/09/1989 | US4829020 Molecular beam epitaxy, tungsten carbide |
| 05/05/1989 | WO1989004055A1 Sublimation growth of silicon carbide single crystals |
| 04/18/1989 | US4822466 Chemically bonded diamond films and method for producing same |
| 04/04/1989 | US4818636 Films of catenated phosphorus materials, their preparation and use, and semiconductor and other devices employing them |
| 03/22/1989 | EP0307995A2 Process and device for gas delivery to an epitaxy apparatus |
| 03/21/1989 | US4813373 Cell for epitaxy by molecular beams and associated process |
| 03/15/1989 | EP0307096A2 Growth rate monitor for molecular beam epitaxy |
| 03/14/1989 | US4812650 Growth rate monitor for molecular beam epitaxy |
| 03/14/1989 | US4812352 Article having surface layer of uniformly oriented, crystalline, organic microstructures |
| 03/07/1989 | US4810473 Molecular beam epitaxy apparatus |
| 03/01/1989 | EP0305292A2 A process for preparing a thin film of superconducting compound oxide |
| 02/21/1989 | US4806502 Method for doping semi-conductor material during epitaxial growth |
| 02/21/1989 | CA1250209A1 Method of producing ii-v compound semiconductors |
| 02/14/1989 | US4804583 Alternating thin films of hard and tough materials; superlattices |
| 02/08/1989 | EP0302354A2 Method for preparing a laminated structure from an oxide-ceramic supraconducting material |
| 01/24/1989 | US4800100 Thin films |
| 12/29/1988 | WO1988010321A1 Process for the deposition of diamond films |
| 12/07/1988 | EP0294285A1 Superconducting thin film |
| 12/07/1988 | EP0294224A2 Bakeable vacuum systems |
| 12/07/1988 | EP0293836A1 Method for preparing thin film of superconductor |
| 12/01/1988 | DE3808463A1 Single crystals of mercury(I) halides, and methods and appliances for preparing them |
| 12/01/1988 | DE3715717A1 Gas supply system for a molecular beam epitaxy installation |
| 12/01/1988 | DE3715644A1 Molecular beam epitaxy installation |
| 11/30/1988 | EP0293232A1 Method for growing a metal layer over a substrate |
| 11/30/1988 | EP0292533A1 Method of manufacturing multilayered structures by ion beam sputtering |
| 11/22/1988 | US4786616 Method for heteroepitaxial growth using multiple MBE chambers |
| 11/02/1988 | EP0289114A2 Process for producing crystals on a light-transmissive substrate |
| 10/20/1988 | DE3712205A1 Process for producing layers having very hard diamond-like and/or low-friction properties |
| 10/18/1988 | US4778580 Lattice disorder formation by cathode sputtering in inert gas plasma |
| 10/12/1988 | EP0286472A1 Device for vacuum evaporation of materials |
| 10/12/1988 | EP0286274A1 Reagent source for molecular beam epitaxy |