Patents for C23F 1 - Etching metallic material by chemical means (16,062)
04/2007
04/26/2007US20070090089 Method to trim and smooth high index contrast waveguide structures
04/26/2007US20070090088 Methods And Systems For Laser Processing
04/26/2007US20070090087 Method of forming patterns and method of manufacturing magnetic recording media
04/26/2007US20070090084 Reclaim method for extreme ultraviolet lithography mask blank and associated products
04/26/2007US20070089835 Method and apparatus for measuring electron density of plasma and plasma processing apparatus
04/26/2007US20070089834 Plasma reactor with a multiple zone thermal control feed forward control apparatus
04/26/2007US20070089833 Method of operating ion source and ion implanting apparatus
04/25/2007EP1535317A4 High temperature anisotropic etching of multi-layer structures
04/25/2007CN1954093A Methods and apparatuses for transferring articles through a load lock chamber under vacuum
04/25/2007CN1952034A Abrasive liquid for metal and abrasive method
04/25/2007CN1312533C Etching method and method for mfg circuit device thereby
04/24/2007US7208094 Methods of bridging lateral nanowires and device using same
04/24/2007US7208066 Substrate processing apparatus and substrate processing method
04/24/2007US7208047 Apparatus and method for thermally isolating a heat chamber
04/19/2007WO2007044248A2 Low-voltage inductively coupled source for plasma processing
04/19/2007WO2007044028A2 Applications and fabrication techniques for large scale wire grid polarizers
04/19/2007WO2007043688A1 FUNCTIONAL MEMBER FROM Co-BASED ALLOY AND PROCESS FOR PRODUCING THE SAME
04/19/2007WO2007043670A1 Process for producing metal wiring board
04/19/2007WO2007041998A1 Method for removing the coating from a gas turbine component
04/19/2007WO2006065532A3 Wafer heating and temperature control by backside fluid injection
04/19/2007WO2006011996A3 Methods and apparatus for the optimization of etch resistance in a plasma processing system
04/19/2007US20070087577 Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatus
04/19/2007US20070087455 Independent control of ion density, ion energy distribution and ion dissociation in a plasma reactor
04/19/2007US20070085483 Plasma confinement apparatus, and method for confining a plasma
04/19/2007US20070084826 Method of forming high aspect ratio apertures
04/19/2007US20070084825 Spin-on coater, rotation processing method and color-filter fabricating method
04/19/2007US20070084564 Conformal doping apparatus and method
04/19/2007US20070084563 Independent control of ion density, ion energy distribution and ion dissociation in a plasma reactor
04/19/2007US20070084561 Device for liquid treatment of wafer-shaped articles
04/19/2007US20070084406 Reaction chamber with opposing pockets for gas injection and exhaust
04/19/2007US20070084405 Adaptive plasma source for generating uniform plasma
04/19/2007DE102006048593A1 Electron outlet window for an electron beam accelerator, is formed by reducing the thickness of a titanium or glass film by etching
04/19/2007DE102005049249A1 Verfahren zur Entschichtung eines Gasturbinenbauteils A method for stripping a gas turbine component
04/18/2007EP1774054A1 Variable quadruple electromagnet array, particularly used in a multi-step process for forming a metal barrier in a sputter reactor
04/18/2007CN1950545A Apparatus including showerhead electrode and heater for plasma processing
04/18/2007CN1950538A Variable quadruple electromagnet array, particularly used in a multi-step process for forming a metal barrier in a sputter reactor
04/18/2007CN1311099C Corrosion method of metal tin or tin alloy, and corrosion liquor of metal tin or tin alloy
04/18/2007CN1311056C An etchant for a wiring, a method for manufacturing the wiring using the etchant, a thin film transistor array panel including the wiring, and a method for manufacturing the same
04/17/2007US7205245 Method of forming trench isolation within a semiconductor substrate
04/17/2007US7205237 Apparatus and method for selected site backside unlayering of si, GaAs, GaxAlyAszof SOI technologies for scanning probe microscopy and atomic force probing characterization
04/17/2007US7205166 Method and apparatus of arrayed, clustered or coupled eddy current sensor configuration for measuring conductive film properties
04/17/2007US7204935 Method of etching a metallic film on a substrate
04/17/2007US7204913 In-situ pre-coating of plasma etch chamber for improved productivity and chamber condition control
04/17/2007US7204911 Process and apparatus for forming discrete microcavities in a filament wire using a polymer etching mask
04/17/2007US7204888 Lift pin assembly for substrate processing
04/17/2007US7204886 Apparatus and method for hybrid chemical processing
04/12/2007WO2007041041A2 Bonded multi-layer rf window
04/12/2007WO2007040752A2 Process and system for etching doped silicon using sf6-based chemistry
04/12/2007WO2007040717A2 Process and system for etching doped silicon
04/12/2007WO2007040046A1 Etchant for nickel-chromium alloy
04/12/2007WO2006022997A3 Method and system for substrate temperature profile control
04/12/2007US20070082494 Method for forming silicide layer
04/12/2007US20070082466 High density plasma chemical vapor deposition apparatus, operating method thereof, and method of manufacturing semiconductor device
04/12/2007US20070080142 Method and apparatus for forming a planarizing pad having a film and texture elements for planarization of microelectronic substrates
04/12/2007US20070080141 Low-voltage inductively coupled source for plasma processing
04/12/2007US20070080140 Plasma reactor control by translating desired values of m plasma parameters to values of n chamber parameters
04/12/2007US20070080139 Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure
04/12/2007US20070080138 Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of plural chamber parameters
04/12/2007US20070080137 Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure
04/12/2007US20070080134 Method of fabricating inkjet nozzle chambers having filter structures
04/12/2007US20070080133 Method of fabricating inkjet nozzles having associated ink priming features
04/12/2007US20070080132 Method of fabricating inkjet nozzle chambers having sidewall entrance
04/12/2007US20070079936 Bonded multi-layer RF window
04/12/2007US20070079934 Gas dispersion plate and manufacturing method therefor
04/12/2007US20070079933 Method and apparatus for forming a planarizing pad having a film and texture elements for planarization of microelectronic substrates
04/11/2007CN1947216A Multi-piece baffle plate assembly for a plasma processing system
04/11/2007CN1946877A Etching method and etchant
04/11/2007CN1309867C Polycrystal silicon etching process with reduced micro channel effect
04/10/2007US7202169 Method and system for etching high-k dielectric materials
04/10/2007US7202165 Electronic device having a stacked wiring layer including Al and Ti
04/10/2007US7202101 Multi-metal layer MEMS structure and process for making the same
04/10/2007US7201853 Applying photoresist polymer to substrate; curing; etching; forming projections
04/10/2007US7201851 Vacuum processing apparatus and substrate transfer method
04/10/2007US7201846 Micro-fluidic anti-microbial filter
04/10/2007US7201823 High throughput plasma treatment system
04/05/2007WO2007038514A2 Apparatus and method for substrate edge etching
04/05/2007WO2007038321A2 Ultrapure colloidal silica for use in chemical mechanical polishing applications
04/05/2007WO2007038054A2 Apparatus for the removal of an edge polymer from a substrate and methods therefor
04/05/2007WO2007037955A2 Actively heated aluminum baffle component having improved particle performance and methods of use and manufacture thereof
04/05/2007US20070077770 Etching technique to planarize a multi-layer structure
04/05/2007US20070077767 Method of plasma etching of high-k dielectric materials
04/05/2007US20070077368 Ion beam method for removing an organic light emitting material
04/05/2007US20070075292 Ultrapure colloidal silica for use in chemical mechanical polishing applications
04/05/2007US20070075291 CMP Slurry, Preparation Method Thereof and Method of Polishing Substrate Using the Same
04/05/2007US20070075042 Stabilizer-Fenton's reaction metal-vinyl pyridine polymer-surface-modified chemical mechanical planarization composition and associated method
04/05/2007US20070075041 Chemically mechanically polishing the surface gallium-indium-arsenide-phosphide crystal using polishing slurry containing abrasive grains formed of SiO2; crystal surface having a small surface roughness can be formed at a high polishing rate and effectively
04/05/2007US20070075039 Electrolytic cells; plate dielectric and electrodes; control discharging of gases
04/05/2007US20070075038 Vertical profile fixing
04/05/2007US20070075033 Method of manufacturing an electrostatic actuator
04/05/2007US20070074816 Etcher for trimming photoresist
04/05/2007US20070074815 Plasma ethching apparatus and plasma etching process
04/05/2007US20070074814 Apparatus and method for treating a substrate with plasma, and facility for manufacturing semiconductor devices
04/05/2007US20070074813 Method and apparatus for plasma doping
04/05/2007US20070074812 Temperature control of plasma density probe
04/05/2007US20070074811 Method and apparatus for measuring plasma density in processing reactors using a long dielectric tube
04/05/2007DE102005047081A1 Process for plasma-free etching of silicon with etching gas useful in production of deep structures such as through holes or troughs where silicon has one or more regions to be etched as layer on substrate or on substrate itself
04/04/2007EP1769775A2 Methods and apparatus for manufacturing an intravascular stent
04/04/2007EP1769102A2 Substrate support system and method
04/04/2007EP1769101A2 Apparatus including gas distribution member supplying process gas and radio frequency (rf) power for plasma processing
04/04/2007CN2885883Y Etching machine
1 ... 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 ... 161