C23F 1 - Etching metallic material by chemical means

Patents for C23F 1 - Etching metallic material by chemical means (16,062)
11/2007
11/21/2007	CN100350570C Etching method for aluminum-molybdenum laminate film
11/20/2007	US7297286 Methods for resist stripping and other processes for cleaning surfaces substantially free of contaminants
11/20/2007	US7296534 Hybrid ball-lock attachment apparatus
11/15/2007	WO2007131198A1 Polishing piezoelectric material
11/15/2007	WO2007131188A1 Processing piezoelectric material
11/15/2007	WO2007130490A2 Plasma reactor with a dynamically adjustable plasma source power applicator
11/15/2007	WO2007130489A2 Plasma reactor with a dynamically adjustable plasma source power applicator
11/15/2007	WO2007130282A2 A method and composition for selectively stripping nickel from a substrate
11/15/2007	WO2007128345A1 Acidic cleaner for metal surfaces
11/15/2007	WO2006093578A3 Chuck pedestal shield
11/15/2007	WO2006055236A3 Wafer processing system and method of manufacturing wafers
11/15/2007	US20070262052 Film removal method and apparatus
11/15/2007	US20070262051 Method of plasma etching with pattern mask
11/15/2007	CA2651186A1 Acidic cleaner for metal surfaces
11/14/2007	EP1853520A1 Method for adsorption of metal and an adsorption material directed thereto and method for re-use of the adsorption material
11/14/2007	EP1074042B1 Synchronous multiplexed near zero overhead architecture for vacuum processes
11/14/2007	CN101070596A Etching composition of thin film transistor liquid crystal display device
11/13/2007	US7294516 Test patterns and methods of controlling CMP process using the same
11/13/2007	US7294279 Method for releasing a micromechanical structure
11/13/2007	US7294207 Gas-admission element for CVD processes, and device
11/13/2007	US7294205 Method for reducing the intrinsic stress of high density plasma films
11/13/2007	US7293526 Plasma reaction chamber liner consisting essentially of osmium
11/08/2007	WO2007127872A2 Method and system to measure flow velocity and volume
11/08/2007	WO2005059960A3 Segmented radio frequency electrode apparatus and method for uniformity control
11/08/2007	US20070259221 Lower electrical contact resistance and good corrosion resistance; titanium contains titanium boride particles dispersed throughout the substrate, a part of the TiB particles extending from the substrate through a passivation film to form an electroconductive path; power sources for electric vehicles
11/08/2007	US20070259129 Controlled zone microwave plasma system
11/08/2007	US20070257396 Device and method of forming nanoimprinted structures
11/08/2007	US20070257011 Advanced process control for low variation treatment in immersion processing
11/08/2007	US20070257010 Method and composition for selectively stripping nickel from a substrate
11/08/2007	US20070257009 Rotating at least the outer radio frequency source power applicator about a radial tilt axis to a position at which the spatial distribution of a plasma process parameter, such as etch rate, has at least a nearly minimal non-symmetry relative to the common axis of symmetry; semiconductor fabrication
11/08/2007	US20070257008 Method of processing a workpiece in a plasma reactor with dynamic adjustment of the plasma source power applicator and the workpiece relative to one another
11/08/2007	US20070257007 Bubble-ink jet print head and fabrication method thereof
11/08/2007	US20070257006 Method for dry etching fluid feed slots in a silicon substrate
11/08/2007	US20070256787 Plasma reactor with a dynamically adjustable plasma source power applicator
11/08/2007	US20070256786 Apparatus for etching high aspect ratio features
11/08/2007	US20070256784 Plasma reactor with apparatus for dynamically adjusting the plasma source power applicator and the workpiece relative to one another
11/08/2007	US20070256638 Electrode plate for use in plasma processing and plasma processing system
11/08/2007	DE102006020825A1 Verfahren zur Herstellung einer Schichtenstruktur A method for producing a layer structure
11/07/2007	EP1851286A2 Novel polishing slurries and abrasive-free solutions having a multifunctional activator
11/07/2007	EP1851071A1 Elevator load bearing member having a jacket with at least one traction-enhancing exterior surface
11/07/2007	CN101068950A Gas distribution system
11/07/2007	CN101068001A Method for manufacturing layer structure
11/07/2007	CN100348077C Plasma treatment device and substrate surface treatment device
11/07/2007	CN100347829C Etching device for high precision silicon senser chip
11/07/2007	CN100347757C Method of dry etching, method of manufacturing magnetic recording medium, and magnetic recording medium
11/07/2007	CN100347344C Etching solution composition for metal foil using silver as main composition
11/07/2007	CN100347338C Acidic solution for silver deposition and method for silver layer deposition on metal surfaces
11/07/2007	CN100347334C Double-frequency vacuum sediment equipment having radiofrequency power supply feeding unit
11/06/2007	US7291284 Using a nanoscopic or atomic force microscope tip to apply a patterning chemical etching resist compound to a substrate (especially a semiconductor), and chemically etching the substrate
11/06/2007	US7291283 Combined wet etching method for stacked films and wet etching system used for same
11/01/2007	WO2007123663A2 Devices and methods for measuring wafer characteristics during semiconductor wafer polishing
11/01/2007	WO2007122855A1 Etching solutions, method for regeneration of waste etching solutions and method for the recovery of valuable metals from waste etching solutions
11/01/2007	WO2007055669A3 Recyclable etching solution
11/01/2007	WO2006066016A3 Systems and methods for forming nanodisks used in imprint lithography and nanodisk and memory disk formed thereby
11/01/2007	US20070254483 Plasma etch process using polymerizing etch gases and an inert diluent gas in independent gas injection zones to improve etch profile or etch rate uniformity
11/01/2007	US20070251947 Container for Receiving or Holding, Respectively, and Storing Liquids as Well as Viscous Substances, and Method for the Production Thereof
11/01/2007	US20070251922 Automatic gain control
11/01/2007	US20070251921 Method and System to Measure Flow Velocity and Volume
11/01/2007	US20070251920 Method of operating a plasma reactor having an overhead electrode with a fixed impedance match element
11/01/2007	US20070251918 Plasma etch process using polymerizing etch gases with different etch and polymer-deposition rates in different radial gas injection zones with time modulation
11/01/2007	US20070251917 Plasma etch process using polymerizing etch gases across a wafer surface and additional polymer managing or controlling gases in independently fed gas zones with time and spatial modulation of gas content
11/01/2007	US20070251914 Glass thinning equipment and manufacturing method
11/01/2007	US20070251642 Plasma reactor apparatus with multiple gas injection zones having time-changing separate configurable gas compositions for each zone
10/2007
10/31/2007	EP1676294A4 Thermal processing system with cross flow injection system with rotatable injectors
10/31/2007	EP1573771A4 System and method for removal of materials from an article
10/31/2007	CN101065616A Method and system for wafer temperature control
10/31/2007	CN101064411A Wet etching method for gallium arsenide/aluminum arsenide distributed Bragg reflector
10/31/2007	CN101063197A Cleaning method of chemical vapor deposition equipment
10/30/2007	US7289866 Plasma processing method and apparatus
10/30/2007	US7288208 Method of manufacturing ZnO substrate from ZnO crystal formed by hydrothermal synthesis method
10/30/2007	US7288207 Etching liquid for controlling silicon wafer surface shape and method for manufacturing silicon wafer using the same
10/30/2007	US7288205 Hermetic low dielectric constant layer for barrier applications
10/30/2007	US7288173 Ion beam processing system and ion beam processing method
10/30/2007	US7288170 Generation. conditioning , reuse of metal containing electrolytes; surface treatment; ion exchanging
10/30/2007	US7288166 Plasma processing apparatus
10/30/2007	US7288165 Pad conditioning head for CMP process
10/30/2007	US7287314 One step copper damascene CMP process and slurry
10/25/2007	WO2007047055A3 Reaction chamber with opposing pockets for gas injection and exhaust
10/25/2007	US20070247075 Plasma etch reactor with distribution of etch gases across a wafer surface and a polymer oxidizing gas in an independently fed center gas zone
10/25/2007	US20070246443 Process using combined capacitively and inductively coupled plasma process for controlling plasma ion dissociation
10/25/2007	US20070246441 Resist composition, method for forming resist pattern using the same, array substrate fabricated using the same and method of fabricating the array substrate
10/25/2007	US20070246440 Semiconductor memory device and manufacturing method thereof
10/25/2007	US20070246439 Gap filling method, method for forming semiconductor memory device using the same, and semiconductor device having a filled gap
10/25/2007	US20070246163 Plasma reactor apparatus with independent capacitive and inductive plasma sources
10/25/2007	US20070246162 Plasma reactor apparatus with an inductive plasma source and a VHF capacitively coupled plasma source with variable frequency
10/25/2007	US20070246161 Plasma reactor apparatus with a toroidal plasma source and a VHF capacitively coupled plasma source with variable frequency
10/25/2007	US20070245963 Inductively Coupled Plasma Reactor with Multiple Magnetic Cores
10/24/2007	EP1397533B1 Method and device for locally removing coatings from parts
10/24/2007	EP0805722B1 Roughening of metal surfaces
10/24/2007	CN200964439Y Etching device for circuit board
10/24/2007	CN101061253A Substrate processing apparatus using a batch processing chamber
10/24/2007	CN101058884A Magnesium alloy etching agent and using method thereof
10/24/2007	CN101058883A Gas supply device
10/24/2007	CN101058712A Grinding fluid for metal and grinding method
10/24/2007	CN101058711A Grinding fluid for metal and grinding method
10/24/2007	CN100345257C 等离子体处理装置 Plasma processing apparatus
10/24/2007	CN100344793C Quantitative monitoring method and structure for plasma etching
10/23/2007	US7285229 Etching aqueous solution containing hydrochloric acid, nitric acid and cupric compound; process control
10/23/2007	US7285228 Device and method for anisotropic plasma etching of a substrate, a silicon body in particular
10/18/2007	WO2007117741A2 A reduced contaminant gas injection system and method of using

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